TW201448127A - 樹脂密封型半導體裝置及其製造方法 - Google Patents

樹脂密封型半導體裝置及其製造方法 Download PDF

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TW201448127A
TW201448127A TW103102119A TW103102119A TW201448127A TW 201448127 A TW201448127 A TW 201448127A TW 103102119 A TW103102119 A TW 103102119A TW 103102119 A TW103102119 A TW 103102119A TW 201448127 A TW201448127 A TW 201448127A
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lead
resin
semiconductor device
cutting
sealed semiconductor
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TW103102119A
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TWI591775B (zh
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Noriyuki Kimura
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Seiko Instr Inc
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Abstract

〔課題〕提供即使在引線部端面不存在電鍍層，於藉由焊料之接合劑將半導體裝置接合於印刷基板等之安裝基板之時，透過從密封樹脂部露出之引線部之上面部分也在引線部端面形成銲條的半導體裝置及其製造方法。〔解決手段〕將被搭載在晶片焊墊部上之半導體元件，和被配置成其前端與晶片焊墊部相向之複數之引線部，和連接半導體元件之電極和引線部之金屬細線，該些予以部分性地樹脂密封的樹脂密封型半導體裝置之晶片焊墊部之底面部和引線部之引線底面部和外側面部和上側端部從密封樹脂露出，在引線上側端部之上形成無密封樹脂之缺口部之後，對引線底面部及引線上側端部施予電鍍層。

Description

樹脂密封型半導體裝置及其製造方法
本發明係關於被稱為QFN、DFN之無引線型之樹脂密封型半導體裝置和其製造方法。尤其，關於提升引線端子部之安裝可靠性之樹脂密封型半導體裝置，和其製造方法。
近年來，為了對應於電子機器之小型化，要求半導體零件之高密度安裝，隨此發展半導體零件之小型化、薄型化。與BGA或CSP封裝體並列，DFN或QFN型之半導體裝置被實用化，以作為使用引線之小型封裝體。
圖7(a)為以往之DFN封裝體之背面圖，圖7(b)為其A-A線剖面圖。DFN封裝體係藉由密封樹脂16密封引線部13和被搭載在晶片焊墊部12之半導體元件11，使複數之引線部13和晶片焊墊部12從其背面露出。複數之引線部13被整列在封裝體背面中相向之兩方向，該些形成外部引線。再者，複數之引線部13係在密封樹脂16 內經金屬細線14而與半導體元件11之表面電極電性連接。
DFN封裝體因不使複數之引線部13從樹脂16突出至外部，故持有可以縮小對安裝基板之安裝面積的優點。再者，藉由使晶片焊墊部12從密封樹脂16露出，可以使內部之發熱效率佳地散熱至外部。但是，DFN封裝體也有在密封樹脂16內密封晶片焊墊部12之構造。QFN封裝體係在封裝體背面使外部引線露出至4方向之構成。
圖8係從上觀看樹脂密封後之框架的上視圖，接著圖9為圖8所示之框架之切斷後之B-B剖面圖。如圖8及圖9所示般，採用以密封樹脂16密封被搭載在框架之各晶片焊墊部12之半導體元件11之後，沿著切斷線，藉由切割裝置之旋轉刀，同時切斷密封樹脂16和引線部13，如圖10所示般，個片化成各個半導體裝置之方法。(例如，參照專利文獻1)
〔先前技術文獻〕 〔專利文獻〕
[專利文獻1]日本特表2002-519848號公報(圖7)
但是，該種樹脂密封型半導體裝置係於樹脂密封後，以旋轉刀切斷引線部13之切斷處而從框架分離，取得各個半導體裝置，但因從框架切斷引線部13而形成，故如 圖11所示般，在引線部13之切斷部之端面，不存在電鍍層17，於使用焊料18將半導體裝置接合於印刷基板等之安裝基板20之時，在從引線部13之密封樹脂部露出之側面部分，不形成藉由焊料18所產生的銲條，有安裝強度變弱，安裝可靠性下降之虞。
當參照圖面說明被安裝之狀態時，圖11為圖10所示之圓內之放大圖，表示半導體裝置之引線部13。從被引線切斷之引線部13之密封樹脂16露出之引線部13之端面部，不存在被形成在其他引線部13之外部表面之電鍍層17。因此，如放大被安裝之狀態之模式剖面圖的第12圖所示般，藉由焊料18等之接合劑在半導體裝置20安裝半導體裝置之時，在引線部13之端面部分不形成銲條，安裝強度下降。
本發明係解決上述課題，提供可以提升DFN或QFN型之樹脂密封型半導體裝置之基板安裝之強度及安裝可靠性之半導體裝置及其製造方法。
本發明係為了解決上述課題，使用下述般之手段。
首先，為一種樹脂密封型半導體裝置，其特徵在於具有：晶片焊墊部；半導體元件，其被搭載在上述晶片焊墊部上；複數之引線部，其係被配置成與上晶片焊墊相向；金屬細線，其連接有上述半導體元件之複數之電極和上述複數之引線部；及密封樹脂，其係以上述複數之引線部部 分性露出之方式，密封上述晶片焊墊部、上述半導體元件及上述複數之引線部；上述複數之引線部具備有從上述密封樹脂露出的屬於底面之引線底面部和屬於前端之引線外側面部和屬於上面之一部分的引線上側端部，上述引線底面部位於與上述密封樹脂之底面相同面內，上述引線底面部及上述引線上側端部具有電鍍層，在上述引線上側端部之垂直上方透過無上述密封樹脂之缺口部存在有上述密封樹脂。
再者，上述引線外側面部突出至較上述密封樹脂之側面更外側。
再者，上述引線外側面部與上述密封樹脂之側面為同一面。
再者，上述引線底面部之電鍍層及上述引線上側端部之電鍍層係由鉛、鉍、錫、銅、銀、鈀及金中之一個金屬層或兩個以上之合金層所構成。
再者，上述缺口部為U形。
再者，上述晶片焊墊部之底面部從上述密封樹脂露出。
再者，上述引線部係由內引線部和外引線部所構成，被折彎成內引線部高於外引線部。
再者，使用樹脂密封型半導體裝置之製造方法，其特徵在於由下述工程所組成：準備將晶片焊墊部及被配置成與上述晶片焊墊部相向之複數之引線部當作1單元，具有複數之其單元的框架或電鑄基板的工程；在上述框架或電 鑄基板之第1面貼合密封薄片之工程；在與上述複數之引線部之上述第1面相反側之第2面形成可溶性薄膜之工程；在上述框架或電鑄基板之上述晶片焊墊部上分別搭載半導體元件，以金屬細線連接上述複數之引線部和上述半導體元件表面之電極的工程；以上述複數之引線部之引線底面部露出之方式，藉由密封樹脂對上述晶片焊墊部和上述半導體元件和上述複數之引線部進行樹脂密封之工程；對上述可溶性薄膜進行溶解除去，形成空洞部之工程；將上述框架或電鑄基板浸漬在電鍍浴而在上述引線底面部和引線上側端部形成電鍍層之工程；從上述第1面側對上述引線部施予第1切斷，而形成到達上述空洞部的第1溝的工程；從與上述第1面相反側之第2面側對上述密封樹脂施予第2切斷，而從上述框架或電鑄基板分離樹脂密封型半導體裝置之工程。
再者，上述第1切斷為沖頭切斷，上述第2切斷為旋轉刀切斷。
再者，上述第1切斷為沖頭切斷，上述第2切斷也為沖頭切斷。
再者，上述第1切斷為旋轉刀切斷，上述第2切斷也為沖頭切斷。
再者，上述旋轉刀之切斷寬度較上述沖頭切斷之切斷寬度寬，較上述空洞部之寬度窄。
然後，上述旋轉刀之切斷寬度與上述沖頭切斷之切斷寬度相同，較上述空洞部之寬度窄。
藉由使用上述手段，於將本發明之樹脂密封型半導體裝置焊料接合於印刷基板等之安裝基板之連接盤部之時，因銲條被形成至被設置在引線部之引線上側端部之電鍍層，故可以提升安裝強度，並提高安裝可靠性。並且，於基板安裝時，藉由在引線端面部形成形狀良好之銲條，可以提升安裝後之接合部之外觀檢查時之辨識精度，並可以防止辨識不良。
11‧‧‧半導體元件
12‧‧‧晶片焊墊部
13‧‧‧引線部
14‧‧‧金屬細線
15‧‧‧密封薄片
16‧‧‧密封樹脂
17‧‧‧電鍍層
18‧‧‧焊料
19a‧‧‧引線底面部
19b‧‧‧引線上側端部
19c‧‧‧引線外側面部
20‧‧‧安裝基板
21‧‧‧連接盤部
22‧‧‧缺口部
23‧‧‧水溶性膠帶
24‧‧‧空洞部
25‧‧‧薄壁部
圖1為本發明之一實施例之搭載半導體元件之框架之上視圖。
圖2為表示本發明之一實施型態之樹脂密封型半導體裝置之製造方法，(a)為上視圖，(b)~(d)為剖面圖。
圖3為接續圖2表示本發明之一實施型態之樹脂密封型半導體裝置之製造方法的剖面圖(e)~(i)。
圖4為接續圖3表示本發明之一實施型態之樹脂密封型半導體裝置之製造方法的剖面圖(j)~(k)。
圖5為表示本發明之一實施型態之樹脂密封型半導體裝置之剖面圖。
圖6為表示本發明之一實施型態之樹脂密封型半導體裝置之剖面圖(安裝狀態放大圖)。
圖7為表示以往之樹脂密封型半導體裝置之圖示。
圖8為以往之樹脂密封型半導體裝置之製造方法的框架上視圖。
圖9為以往之樹脂密封型半導體裝置之製造方法的剖面圖。
圖10為以往之樹脂密封型半導體裝置之剖面圖。
圖11為表示以往之樹脂密封型半導體裝置之剖面圖(引線部放大圖)。
圖12為表示以往之樹脂密封型半導體裝置之剖面圖(安裝狀態放大圖)。
圖13為表示以往之樹脂密封型半導體裝置之剖面圖(安裝狀態放大圖)。
以下，針對本發明之樹脂密封型半導體裝置及其製造方法之一實施型態，一面參照圖面，一面予以說明。
首先，針對本實施例之框架予以說明。
圖1為本實施例之搭載半導體元件的框架或電鑄基板之上視圖，圖2(a)為搭載半導體元件前之框架上視圖，圖2(b)~圖4(k)為表示半導體裝置之製造方法的剖面圖。本實施例之半導體裝置如圖1所示般，框架從銅(Cu)材所構成，成為以被搭載在晶片焊墊部12上之半導體元件11，和被配置其端部與晶片焊墊部12相向之複數引線部13作為1單元，具有複數其元件之構成。圖 中之虛線於搭載半導體元件11而構成樹脂密封型半導體裝置之時，表示以密封樹脂16密封之區域，再者，以二點鏈線表示之線係表示於搭載半導體元件11之後，進行樹脂密封，構成樹脂密封型半導體裝置之後，分離成各個半導體裝置之切斷線。
接著，針對本實施例之樹脂密封型半導體裝置予以說明。圖5為表示使用圖1所示之框架而製造出之一個樹脂密封型半導體裝置之圖示，為沿著圖1內之右上所示之B-B切斷線的剖面圖。
如圖5所示般，在框架之晶片焊墊部12上搭載半導體元件11，藉由金屬細線14電性連接其半導體元件11上之電極和引線部13之內引線部。引線部13係由內引線部和外引線部所構成，被折彎成內引線部高於外引線部。然後，晶片焊墊部12上之半導體元件11、金屬細線14、引線部13藉由密封樹脂16被密封。與晶片焊墊部12之半導體元件11搭載面相反側之背面從密封樹脂16露出，其露出面藉由電鍍層17被覆蓋。電鍍層17係由鉛、鉍、錫、銅、錫、鈀、金中之任一金屬或複數之金屬之合金所構成，藉由電解電鍍法或無電解電鍍法所形成。在晶片焊墊部12之端面設置使晶片焊墊之厚度變薄的薄壁部25，在薄壁部25之背面包繞著密封密封16而成為晶片焊墊部12難以從密封樹脂16脫落之構成。
引線部13之內引線部藉由密封樹脂16被密封，與晶片焊墊部12背面及密封樹脂16底面相同面之外引線部之 引線底面部19a從密封樹脂16露出，在其露出面覆蓋電鍍層17。在密封樹脂16之側面，以引線部13之外引線部之引線上側端部19b露出之方式，設置有U形之缺口部22，在外引線部之引線上側端部19b上也形成覆蓋著電鍍層17。引線之前端為引線被切斷之引線外側面部19c，無被電鍍。
圖6為表示在基板安裝圖5所示之樹脂密封型半導體裝置之狀態圖。在安裝基板20設置有導電性之連接盤部21，經電鍍層17及焊料18與樹脂密封型半導體裝置之晶片焊墊部12之背面及引線部13之外引線部之引線底面部19a接合。因電鍍層17表面具有焊料18容易濕潤之性質，故以覆蓋引線底面部19a、引線上側端部19b、引線外側面部19c之方式，形成銲條，故可以提升安裝強度，提高安裝可靠性。為了比較，在圖13表示在基板安裝無缺口部之以往之樹脂密封型半導體裝置之樣子。該例為引線部13從密封樹脂16突出許多之構造。對此，於圖6所示之樹脂密封型半導體裝置之時，從密封樹脂16之外形(端面)突出的引線13僅些許，成為也有助於樹脂密封型半導體裝置之小型化的構造。再者，些許的引線部突出即使在從樹脂密封型半導體裝置之上面進行外觀檢查之時，也為有效之特徵。
在上述中，雖然以被折彎成內引線部高於外引線部之引線部為例而說明，但是即使引線平面型之樹脂密封型半導體裝置亦可以採用相同之構造。
接著，針對本實施型態之樹脂密封型半導體裝置之製造方法予以說明。
首先，如圖2(a)所示般，準備將在框架內載置半導體元件之矩形狀之晶片焊墊部12和被配置成前端部與其晶片焊墊部12相向之複數引線部13當作1元件，由具有複數該元件之銅材所構成之引線框架。在引線框架之底面側，貼合著密封薄片15，該密封薄片15成為保護密封樹脂不包繞引線部13之底面，用以使引線部13之底面露出之機能構件。
圖2(b)為沿著圖2(a)所示之C-C切斷線的剖面圖。在密封薄片15上接合晶片焊墊部12之背面和引線部13之外引線部之引線底面部，內引線部被折彎較外引線部高，不接著於密封薄片15。
圖2(c)為表示將水溶性膠帶23選擇性地貼在外引線部之上面之狀態的圖示。在此，使用剖面為矩形之水溶性膠帶23。即使為抗蝕層或塗層材取代水溶性膠帶亦可。水溶性膠帶23設置在圖1中以虛線所示之密封樹脂16之全幅。
如圖2(d)所示般，藉由銀漿等之接著劑(無圖示)，分別引線框之各單元之晶片焊墊部12上晶粒接合半導體元件11，之後，如圖3(e)所示般，藉由打線接合法，以金屬細線14電性接合半導體元件11上之電極墊(無圖示)和引線部13之內引線部。
接著，如圖3(f)所示般，藉由轉移模製法，以由環 氧樹脂系樹脂所構成之密封樹脂16，密封晶片焊墊部12、半導體元件11、引線部13之內引線部及外引線部之一部分，以作為引線框架之外圍，然後密封金屬細線14，並且去除密接於引線框架之晶片焊墊部12及引線部13之底面的密封薄片15。在該狀態下，晶片焊墊部12及引線部13從密封樹脂16露出。
接著，如圖3(g)所示般，以水處理使水溶性膠帶23溶解並形成空洞部24。因使用剖面為矩形之水溶性膠帶23，故空洞部24之剖面也成為矩形。於使用抗蝕層取代水溶性膠帶之時，藉由以異丙醇等之溶劑，使抗蝕層溶解，可以形成空洞部24。於塗層材之時，藉由使用熔解此之溶劑，也可以形成空洞部24。
接著，如圖3(h)所示般，在晶片焊墊12背面及引線部13之外引線部之引線底面部，還有露出於空洞部24之外引線部之上面，形成電鍍層17。在此，藉由電解電鍍法形成錫100%組成之電鍍層。電鍍層17之形成除了藉由電解電鍍之方法外，即使使用無電解電鍍亦可。
接著，如圖3(i)所示般，當使用模具沖頭從外引線部之引線底面部側沖頭切斷引線部13之外引線部時，如圖4(j)所示般，其切斷線成為到達至空洞部24之窄溝。
接著，如圖4(k)所示般，藉由旋轉刀從與沖頭切斷相反側之密封樹脂16側(圖中下側)切除，形成到達至空洞部24之溝部。此時之溝幅較以沖頭切斷所形成之 窄溝寬，較空洞部24之寬度窄為佳。
依此，被分離成各個而成為圖5所示之樹脂密封型半導體裝置。此時，空洞部24被分離而成為被設置在密封樹脂16之側面的缺口部22。然後，從藉由沖頭切斷所形成之溝部之溝寬和藉由旋轉刀所形成之溝部之溝寬可以理解，為引線部13之前端的引線外側面部19c僅突出密封樹脂之側面一些。
在上述中，雖然以旋轉刀中之切斷寬度較沖頭切斷中之切斷寬度寬之時的實施例來說明，但是即使將從外引線部側之切斷和從密封樹脂側之切斷設為相同寬度，使該些切斷寬度較空洞部之寬度窄亦可。此時，引線外側面部與密封樹脂之側面成為相同面。為了實現此，即使使用如對從引線部側之切斷和從密封樹脂側之切斷的雙方進行沖頭切斷之手法亦可，即使對雙方進行旋轉刀切斷之手法亦可。
在上述說明中，因針對使用剖面為矩形之水溶性膠帶23之實施例而進行說明，故空洞部24之剖面也成為矩形，缺口部22成為U形。如上述般，亦可使用抗蝕層或塗層材來取代水溶性膠帶23，此時，選擇性被配置之抗蝕層或塗層材之剖面不一定為矩形，亦成為將圓或長圓切成一半的形狀。因此，空洞部24之剖面也成為將圓或長圓切成一半之形狀，缺口部24成為使該些又對半，將圓或長圓切成4分之1的形狀。
以上，因在本發眀之樹脂密封型半導體裝置及其製造 方法中，樹脂密封型半導體裝置係藉由焊料18將半導體裝置接合於印刷基板等之安裝基板20之連接盤部21時，在被設置在引線部13之引線上側端部19b具有電鍍層17，故在引線部13之側面部分形成銲條，可以提升安裝強度，並提高安裝可靠性。並且，於基板安裝時，藉由在引線端面部形成形狀良好之銲條，可以提升安裝後之接合部之外觀檢查時之辨識精度，並可以防止辨識不良。
11‧‧‧半導體元件
12‧‧‧晶片焊墊部
13‧‧‧引線部
14‧‧‧金屬細線
16‧‧‧密封樹脂
17‧‧‧電鍍層
19a‧‧‧引線底面部
19b‧‧‧引線上側端部
19c‧‧‧引線外側面部
22‧‧‧缺口部
25‧‧‧薄壁部

Claims (13)

  1. 一種樹脂密封型半導體裝置，其特徵在於：具有晶片焊墊部；半導體元件，其被搭載在上述晶片焊墊部上；複數之引線部，其被配置成與上述晶片焊墊部之至少兩邊相向；金屬細線，其連接有被設置在上述半導體元件之表面的複數之電極和上述複數之引線部；及密封樹脂，其係以上述複數之引線部部分性露出之方式，密封上述晶片焊墊部、上述半導體元件及上述複數之引線部；上述複數之引線部具備有從上述密封樹脂露出的屬於底面之引線底面部和屬於前端之引線外側面部和屬於上面之一部分的引線上側端部，上述引線底面部位於與上述密封樹脂之底面相同面內，上述引線底面部及上述引線上側端部具有電鍍層，在上述引線上側端部之垂直上方透過無上述密封樹脂之缺口部存在有上述密封樹脂。
  2. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述缺口部之剖面為U形。
  3. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中 上述晶片焊墊部之底面部從上述密封樹脂露出。
  4. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述引線外側面部突出至較上述密封樹脂之側面更外側。
  5. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述引線外側面部與上述密封樹脂之側面為同一面。
  6. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述引線底面部之電鍍層及上述引線上側端部之電鍍層為由選自鉛、鉍、錫、銅、銀、鈀及金中之一個金屬所構成之金屬層或兩個以上之金屬之合金所構成之合金層。
  7. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置，其中上述複數之引線部分別由內引線部和外引線部所構成，上述內引線部被彎折成上述內引線部高於上述外引線部。
  8. 一種樹脂密封型半導體裝置之製造方法，其特徵在於：由下述工程所組成準備將晶片焊墊部及被配置成與上述晶片焊墊部相向之複數之引線部當作1單元，具有複數之該單元的框架或電鑄基板的工程；在上述框架或電鑄基板之第1面貼合密封薄片之工 程；在與上述複數之引線部之上述第1面相反側之第2面形成可溶性薄膜之工程；在上述框架或電鑄基板之上述晶片焊墊部上分別搭載半導體元件，以金屬細線連接上述複數之引線部和上述半導體元件表面之電極的工程；以上述複數之引線部之引線底面部露出之方式，藉由密封樹脂對上述晶片焊墊部和上述半導體元件和上述複數之引線部進行樹脂密封之工程；對上述可溶性薄膜進行溶解除去，在上述密封樹脂形成空洞部之工程；將上述框架或電鑄基板浸漬在電鍍浴而在上述引線底面部和引線上側端部形成電鍍層之工程；從上述第1面側在上述複數之引線部施予第1切斷，而形成到達上述空洞部的第1溝的工程；從與上述第1面相反側之第2面側對上述密封樹脂施予第2切斷，而從上述框架或電鑄基板分離樹脂密封型半導體裝置之工程。
  9. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置之製造方法，其中上述第1切斷為沖頭切斷，上述第2切斷為旋轉刀切斷。
  10. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置之製造方法，其中 上述第1切斷為沖頭切斷，上述第2切斷也為沖頭切斷。
  11. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置之製造方法，其中上述第1切斷為旋轉刀切斷，上述第2切斷為沖頭切斷。
  12. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置之製造方法，其中藉由上述第2切斷之切斷寬度較藉由上述第1切斷之切斷寬度寬，較上述空洞部之寬度窄。
  13. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置之製造方法，其中藉由上述第2切斷之切斷寬度和藉由上述第1切斷之切斷寬度相同，較上述空洞部之寬度窄。
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