TWI624883B - 樹脂密封型半導體裝置之製造方法及樹脂密封型半導體裝置 - Google Patents

樹脂密封型半導體裝置之製造方法及樹脂密封型半導體裝置 Download PDF

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TWI624883B
TWI624883B TW103102120A TW103102120A TWI624883B TW I624883 B TWI624883 B TW I624883B TW 103102120 A TW103102120 A TW 103102120A TW 103102120 A TW103102120 A TW 103102120A TW I624883 B TWI624883 B TW I624883B
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plating layer
resin
lead
metal plating
semiconductor device
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TW103102120A
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TW201448059A (zh
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漥田晋也
秋野勝
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日商艾普凌科有限公司
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Abstract

提供可以對應於窄間距化之樹脂密封型半導 體裝置之製造方法。
在引線(2)之內引線(3)和外引線(4)分別設 置金屬電鍍層(8、9)，在晶片焊墊(1)上搭載半導體晶片，並以金屬細線連接半導體晶片表面之電極和內引線(3)，並以外引線(4)露出之方式，以密封樹脂(11)密封半導體晶片(6)或金屬細線(7)等之後，以散焦之雷射除去樹脂毛邊，剝離附著於引線之金屬。

Description

樹脂密封型半導體裝置之製造方法及樹脂密封型半導體裝置
本發明係關於樹脂密封型半導體裝置之製造方法及引線框架，尤其關於樹脂密封型半導體裝置之樹脂毛邊及附著金屬除去方法。
近年來，為了對應於電子機器之小型化，要求安裝於電子機器內之電子裝置之高密度安裝。在電子裝置之中，有將搭載電晶體等之元件的晶片與引線等之配線用構件同時密封於密封樹脂內之樹脂密封型裝置，也朝該樹脂密封型裝置之小型、薄型化發展。依此，也朝向樹脂密封型裝置中之引線之間距的縮小化，其結果在出現無引線裝置等之電子裝置的安裝方法上也發展出多樣化。於是，要求包含電子裝置之安裝的新製造方法。
以下，針對以往之密封型半導體裝置之構造及製造方法予以說明。
圖7為為了製造以往之樹脂密封型半導體裝置所使用 之引線框架的俯視圖。以往之引線框架40係藉由下述構件所構成：四角形之外框，和被設置在以外框所包圍之區域之略中央部，載置半導體晶片之四角形之晶片焊墊21，和連接外框和晶片焊墊1之吊引線25，和在載置半導體晶片之狀態下，藉由金屬細線等之連接手段與半導體晶片電性連接之內引線23，和在內引線23被連續設置，用以與外部端子連接之外引線24。複數之引線22藉由繫桿32而互相連結。由銀等所組成之金屬電鍍層28係選擇性地被覆蓋在晶片焊墊21及引線22之內引線23。再者，以虛線所包圍之部分成為藉由密封樹脂31所密封之區域。並且，引線框架40並非僅有1個獨立的如圖7所示之構成所形成的圖案，為了大量生產，在圖之左右、上下連續配列有複數個。
圖8為以往之樹脂密封型半導體裝置之平面透視圖，在圖7所示之引線框架40之晶片焊墊21上搭載半導體晶片26，以金屬細線27連接半導體晶片26表面之電極(無圖示)和內引線23，以外引線24露出之方式，以密封樹脂31密封半導體晶片26或金屬細線27等。在該圖中，密封樹脂31為透明。位於外引線24之間的係在除去繫桿32或樹脂密封時突出的樹脂之時利用雷射之情況下，附著引線框架發熱、熔融而飛散的金屬之一部分而作為附著金屬34。如此之附著金屬成為電特性不良之原因的可能性高。為了回避此，提案有在雷射切割之工程中，使膠帶構件密接於切斷部分，並使熔融金屬之一部分轉印至膠帶 構件，不使附著於製品部位的方法。(例如，參照專利文獻1)
[先前技術文獻] [專利文獻]
[專利文件1]日本特開平11-260982號公報
但是，在上述製法方法中，藉由追加膠帶構件及貼合、剝離工程，有製造成本變高之虞。
本發明係以解決如藉由對被加工部照射雷射而發熱、熔融金屬之一部分容易附著於其他部位之上述課題，來取代上述製造方法為目的。
為了達成上述目的，在本發明中，採用下述之手段。
首先使用樹脂密封型半導體裝置之製造方法，係由晶片焊墊和複數之引線所構成之引線框架，和半導體晶片，和密封樹脂所構成之樹脂密封型半導體裝置之製造方法，其特徵在於由下述工程所組成：在上述引線框架及上述引線之內引線和外引線之表面形成金屬電鍍層之工程；在上述晶片焊墊上搭載上述半導體晶片之工程；以金屬細線連接上述半導體晶片和上述內引線之工程；對上述晶片焊墊 上之上述半導體晶片和上述金屬細線和上述引線進行樹脂密封而使上述外引線露出之工程；利用雷射照射除去被形成在相鄰之上述外引線間的樹脂毛邊的樹脂毛邊除去工程；除去從上述密封樹脂露出之上述金屬電鍍層之工程；及在上述外引線形成焊料電鍍層之工程。
再者，上述樹脂毛邊除去工程係使雷射從上述引線散焦。
再者，在上述金屬電鍍層除去工程中，施予光蝕刻。
再者，在上述引線之內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層僅覆蓋在上述引線之上面。
再者，在上述引線之內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層覆蓋在上述引線之上面和側面。
再者，在上述引線之內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層覆蓋在上述引線之上面和側面和底面。
再者，在上述引線之內引線和外引線之表面形成金屬電鍍層之工程中，上述內引線表面之金屬電鍍層和上述外引線表面之金屬電鍍層間隔開。
再者，為一種引線框架，係由晶片焊墊和複數之引線所構成的引線框架，至少在上述引線之內引線和外引線之表面形成金屬電鍍層。
再者，上述金屬電鍍層僅被覆蓋在上述引線之上面。
再者，上述金屬電鍍層被覆蓋在上述引線之上面和側面。
再者，上述金屬電鍍層被覆蓋在上述引線之上面和側面和底面。
然後，上述內引線表面和金屬電鍍層和上述外引線表面之金屬電鍍層間隔開。
1、21‧‧‧晶片焊墊
2、22‧‧‧引線
3、23‧‧‧內引線
4、24‧‧‧外引線
5、25‧‧‧吊引線
6、26‧‧‧半導體晶片
7、27‧‧‧金屬細線
8‧‧‧第1金屬電鍍層
9‧‧‧第2金屬電鍍層
10、30‧‧‧焊料電鍍層
11、31‧‧‧密封樹脂
12、32‧‧‧繫桿
13‧‧‧雷射照射
14、34‧‧‧附著金屬
20、40‧‧‧引線框架
28‧‧‧金屬電鍍層
圖1為用於製造與本發明之第1實施型態有關之樹脂密封型半導體裝置的引線框架之俯視圖。
圖2表示與本發明之第1實施型態有關之樹脂密封型半導體裝置之製造工程的剖面圖。
圖3為接續圖2，表示與本發明之第1實施型態有關之樹脂密封型半導體裝置之製造工程的剖面圖。
圖4表示與本發明之第1實施型態有關之樹脂密封型半導體裝置的平面透視圖。
圖5為用於製造與本發明之第2實施型態有關之樹脂密封型半導體裝置的引線框架之俯視圖。
圖6表示與本發明之第2實施型態有關之樹脂密封型半導體裝置的平面透視圖。
圖7為為了製造以往之樹脂密封型半導體裝置所使用之引線框架的俯視圖。
圖8為以往之樹脂密封型半導體裝置之平面透視圖。
圖9為用於製造與本發明之第3實施型態有關之樹脂 密封型半導體裝置的引線框架之剖面圖。
圖10為用於製造與本發明之第4實施型態有關之樹脂密封型半導體裝置的引線框架之剖面圖。
針對本發明之樹脂密封型裝置之製造方法之第1實施型態，一面參照圖面一面予以說明。
圖1為用於製造與本發明之第1實施型態有關之樹脂密封型半導體裝置的引線框架之俯視圖。引線框架20係藉由下述構件所構成：四角形之外框，和被設置在以外框所包圍之區域之略中央部，載置半導體晶片之四角形之晶片焊墊1，和連接外框和晶片焊墊1之吊引線5，和在載置半導體晶片之狀態下，藉由金屬細線等之連接手段與半導體晶片電性連接之內引線3，和在內引線3被連續設置，用以與外部端子連接之外引線4。複數之引線2藉由繫桿12而互相連結。由銀等所組成之金屬電鍍層8在晶片焊墊1之全區域及引線2之全區域，即是從內引線3至外引線4，連續覆蓋至繫桿12之附近。此時，金屬電鍍層8即使到達至繫桿12亦可。再者，以虛線所包圍之部分成為藉由密封樹脂11所密封之區域。並且，引線框架20並非1個如圖1所示之構成所組成的圖案，係在左右、上下連續配列複數個。
圖2及圖3係表示與本發明之第1實施型態有關之樹脂密封型半導體裝置之製造工程的剖面圖，表示圖1之 A-A之剖面。
圖2(a)為用於製造與本發明之第1實施型態有關之樹脂密封型半導體裝置的引線框架之剖面圖。晶片焊墊1和引線2隔著間隔被配置，其表面藉由金屬電鍍層8而被覆蓋。
圖2(b)係在晶片焊墊1之表面經接著劑(無圖示)搭載半導體晶片6，使用金屬細線7電性連接半導體晶片6表面之電極(無圖示)和引線2。
圖3(c)為藉由密封樹脂11密封與晶片焊墊1上之半導體晶片6或引線2連接之金屬細線7之工程後的剖面圖。成為晶片焊墊1之底面或引線2之一部分從密封樹脂11露出之構成。再者，引線2上之金屬電鍍層8之一部分也從密封樹脂11露出。在以往之密封樹脂型半導體裝置中，雖然金屬電鍍層藉由密封樹脂完全被密封，但在本發明中，金屬電鍍層8區域較以往之密封樹脂型半導體裝置寬廣，成為從密封樹脂突出之構成。
圖3(d)係在樹脂密封工程中，從上模具和下模具之間隙突出，藉由雷射照射13除去被形成在相鄰之外引線間的樹脂毛邊之工程的剖面圖。使散焦成雷射不會在引線2聚焦之方式。在較引線上面高之位置具有雷射焦點為佳。如此一來，防止雷射能量集中於一點，能量密度衰減的雷射被廣範圍地照射，可藉由雷射照射13有效率地進行樹脂毛邊除去，並且可以抑制引線框架之一部分熔融而飛散之情形。此時，僅有些許飛散的附著金屬14附著在金屬 電鍍層8上。於樹脂毛邊去除不完全之時，藉由於雷射照射後追加鹼處理或噴水處理等，使成為完全去除。
圖3(e)為除去在前工程產生之金屬電鍍層8上之附著金屬，於重新覆蓋形成焊料電鍍層10之後的剖面圖。密封樹脂11成為遮罩，從引線上之密封樹脂11露出之金屬電鍍層8完全被除去，此時附著金屬從引線上被剝離。並且，金屬除去工程係由用以蝕刻金屬電鍍層之除電鍍層工程、光蝕刻工程所組成，在除電鍍層工程中不被剝離之些許的殘渣，在之後的光蝕刻工程中被除去。並且，金屬電鍍層為銀電鍍之時，在除電鍍層工程中，使用硝酸第二鐵溶液或Top Rip(奧野製藥工業公司製造)等，框架為銅之時，於光蝕刻工程，使用氯化第二鐵溶液或Melpolish(Meltex公司製造)等。在焊料電鍍層之成膜工程中，形成以錫為主成分添加有鉍或銀之被膜。
圖3(f)為表示去除包含繫桿之引線框架外框而使樹脂密封型半導體裝置從引線框架之外框分離之狀態的剖面圖。如圖所示般，焊料電鍍層10被覆蓋在引線2之底面和外引線4之上面，個片化時之切割面的外引線4之側端面不被覆蓋。
圖4表示與本發明之第1實施型態有關之樹脂密封型半導體裝置的平面透視圖。
在晶片焊墊1上搭載半導體晶片6，並以金屬細線7連接半導體晶片6表面之電極(無圖示)和內引線3，並以外引線4露出之方式，以密封樹脂11密封半導體晶片6 或金屬細線7等。在外引線4之上面覆蓋焊料電鍍層10。
經過上述工程，完成了解決藉由對被加工部照射雷射而發熱、熔融之金屬之一部分容易附著於其他部位之課題的本發明之樹脂密封型半導體裝置。
圖5為用於製造與本發明之第2實施型態有關之樹脂密封型半導體裝置的引線框架之俯視圖。與圖1所示之引線框架不同的係引線上面的金屬電鍍層。在本實施型態中係隔著間隔配置內引線上之金屬電鍍層之第1金屬電鍍層8和外引線上之第2金屬電鍍層9之點。藉由使用如此之引線框架，金屬電鍍層不會從密封樹脂端露出，成為可靠性良好之樹脂密封型半導體裝置。
圖6表示與本發明之第2實施型態有關之樹脂密封型半導體裝置的平面透視圖。
在晶片焊墊1上搭載半導體晶片6，並以金屬細線7連接半導體晶片6表面之電極(無圖示)和內引線3，並以外引線4露出之方式，以密封樹脂11密封半導體晶片6或金屬細線7等。在外引線4之上面，覆蓋焊料電鍍層10，內引線3上之第1金屬電鍍層8和外引線4上之焊料電鍍層10間隔開，第1金屬電鍍層8藉由密封樹脂11完全被密封，因不會其端面露出，故可靠性提升。
雖然至此之說明係針對在引線之上面覆蓋金屬電鍍層之實施例而進行，但可成為不僅在上面覆蓋金屬電鍍層，藉由也在引線之側面覆蓋，且也在引線底面覆蓋，更確實 地除去附著金屬。
圖9為用於製造與本發明之第3實施型態有關之樹脂密封型半導體裝置之引線框架之剖面圖，不僅在引線之上面，也在引線2側面及底面覆蓋金屬電鍍層8。在圖9(a)中，僅在晶片焊墊1之上面覆蓋金屬電鍍層8，在圖9(b)中，與引線2相同，也在側面及底面設置金屬電鍍層8。
圖10為用於製造與本發明之第4實施型態有關之樹脂密封型半導體裝置的引線框架之剖面圖，為第2實施型態之變形例。不僅在引線之上面，也在引線2側面及底面覆蓋金屬電鍍層8。在圖10(a)中，僅在晶片焊墊1之上面隔著間隔地配置第1金屬電鍍層8和第2金屬電鍍層9，在圖10(b)中，與引線2相同，也在側面及底面設置金屬電鍍層8。

Claims (11)

  1. 一種樹脂密封型半導體裝置之製造方法，其特徵在於：由下述工程所組成準備具有分別擁有內引線和外引線的複數之引線及晶片焊墊的引線框架之工程；在上述晶片焊墊及上述複數之引線之上述內引線和外引線之表面形成金屬電鍍層之工程；在形成有上述金屬電鍍層之上述晶片焊墊上搭載半導體晶片之工程；以金屬細線連接上述半導體晶片和上述內引線之工程；藉由密封樹脂對上述晶片焊墊上之上述半導體晶片、上述金屬細線和上述內引線進行樹脂密封而使上述外引線露出之工程；利用雷射照射除去被形成在相鄰之上述外引線間的樹脂毛邊的樹脂毛邊除去工程；除去從上述密封樹脂露出之上述金屬電鍍層之金屬電鍍層除去工程；及在上述金屬電鍍層被除去之上述外引線形成焊料電鍍層之工程。
  2. 如申請專利範圍第1項所記載之樹脂密封型半導體裝置之製造方法，其中上述樹脂毛邊除去工程係使雷射從上述引線散焦。
  3. 如申請專利範圍第1或2項所記載之樹脂密封型半 導體裝置之製造方法，其中在上述金屬電鍍層除去工程中，實施光蝕刻工程。
  4. 如申請專利範圍第1或2項所記載之樹脂密封型半導體裝置之製造方法，其中在上述內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層僅覆蓋在上述引線之上面。
  5. 如申請專利範圍第1或2項所記載之樹脂密封型半導體裝置之製造方法，其中在上述內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層覆蓋在上述引線之上面和側面。
  6. 如申請專利範圍第1或2項所記載之樹脂密封型半導體裝置之製造方法，其中在上述內引線和外引線之表面形成金屬電鍍層之工程中，將上述金屬電鍍層覆蓋在上述引線之上面和側面和底面。
  7. 如申請專利範圍第1或2項所記載之樹脂密封型半導體裝置之製造方法，其中在上述內引線和外引線之表面形成金屬電鍍層之工程中，上述內引線表面之金屬電鍍層和上述外引線表面之金屬電鍍層間隔開。
  8. 一種樹脂密封型半導體裝置，其特徵在於具有：分別擁有內引線和外引線的複數之引線；晶片焊墊；被配置在上述晶片焊墊上之半導體晶片； 被形成在上述複數之引線中，各個的上述內引線之至少上面的金屬電鍍層；連接上述半導體晶片和被形成在上述內引線之上述上面的上述金屬電鍍層的金屬細線；密封上述半導體晶片、上述晶片焊墊、上述金屬細線及具有上述金屬電鍍層之上述內引線的密封樹脂；及被形成在上述外引線之表面的焊料電鍍層，上述外引線從上述密封樹脂露出，被形成在上述內引線之至少上面的上述金屬電鍍層之外側之邊緣和上述密封樹脂之外側之面一致，上述焊料電鍍層之內側之邊緣與上述金屬電鍍層之外側之邊緣一致。
  9. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置，其中上述金屬電鍍層僅覆蓋上述複數之引線之各個上面。
  10. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置，其中上述金屬電鍍層覆蓋上述複數之引線之各個上面及側面。
  11. 如申請專利範圍第8項所記載之樹脂密封型半導體裝置，其中上述金屬電鍍層覆蓋上述複數之引線之各個上面、側面及底面。
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