CN103985644A - 树脂密封型半导体装置的制造方法以及引脚架 - Google Patents

树脂密封型半导体装置的制造方法以及引脚架 Download PDF

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CN103985644A
CN103985644A CN201410048546.4A CN201410048546A CN103985644A CN 103985644 A CN103985644 A CN 103985644A CN 201410048546 A CN201410048546 A CN 201410048546A CN 103985644 A CN103985644 A CN 103985644A
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pin
metal
coat
semiconductor device
resin
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CN103985644B (zh
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洼田晋也
秋野胜
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Ablic Inc
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Seiko Instruments Inc
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Abstract

本发明提供树脂密封型半导体装置的制造方法以及引脚架，能够应对窄间距化。在引脚（2）的内引脚（3）与外引脚（4）上分别设置金属镀层（8、9），在芯片安装盘（1）上安装半导体芯片，利用金属细线连接半导体芯片表面的电极和内引脚（3），在以使使外引脚（4）露出的方式利用密封树脂（11）密封半导体芯片（6）、金属细线（7）等后，通过散焦的激光来去除树脂溢料，去掉附着在引脚上的金属。

Description

树脂密封型半导体装置的制造方法以及引脚架
技术领域
本发明涉及树脂密封型半导体装置的制造方法以及引脚架，尤其涉及树脂密封型半导体装置的树脂溢料以及附着金属的去除方法。
背景技术
近年来，为了应对电子设备的小型化，安装在电子设备内的电子器件需要高密度安装。电子器件包括将安装有晶体管等元件的芯片与引脚等布线用部件一起密封在密封树脂内的树脂密封型器件，该树脂密封型器件的小型、薄型化也取得了进展。伴随于此，树脂密封型器件中的引脚间距的缩小化取得了进展，最终，出现了无引脚器件等，电子器件的安装方法向多样化发展。因此，正在寻求包含电子器件的安装在内的新制造方法。
以下，说明现有的密封型半导体装置的构造以及制造方法。
图7是用于制造现有的树脂密封型半导体装置的引脚架的俯视图。现有的引脚架40由以下的部件构成：四边形的外框；四边形的芯片安装盘21，其设置在外框包围的区域的大致中央部，载置半导体芯片；悬吊引脚25，其连接外框和芯片安装盘1；内引脚23，其在载置有半导体芯片的状态下通过金属细线等连接单元与半导体芯片电连接；外引脚24，其与内引脚23连续地设置，用于与外部端子连接。多个引脚22通过连杆（tie bar）32相互连结。在芯片安装盘21以及引脚22的内引脚23上选择性地覆盖由银等构成的金属镀层28。另外，虚线包围的部分为被密封树脂31密封的区域。此外，关于引脚架40，并非独立地仅存在1个由图7所示的结构构成的图案，而是为了大量生产，在图中左右、上下地连续排列有多个。
图8是现有的树脂密封型半导体装置的平面透视图，在图7所示的引脚架40的芯片安装盘21上安装半导体芯片26，利用金属细线27连接半导体芯片26表面的电极（未图示）和内引脚23，以使外引脚24露出的方式利用密封树脂31密封半导体芯片26、金属细线27等。在该图中，密封树脂31是透明的。在将连杆32或树脂密封时溢出的树脂去除时利用激光的情况下，引脚架发热/熔化而飞散的一部分金属作为附着金属34附着于外引脚24之间。这样的附着金属成为电气特性不良的原因的可能性较高。为了避免这种情况，提出了这样的方法等：在激光切割工序中，使带（tape）部件粘合在切断部分，将熔化金属的一部分转印到带部件上，使其不会附着到产品部位上。（例如，参照专利文献1）
专利文献1：日本特开平11-260982号公报
但是，在上述制造方法中，由于追加了带部件以及粘贴/剥离工序而可能导致制造成本上升。
发明内容
本发明目的是取代上述制造方法，解决由于对被加工部照射激光而发热/熔化的一部分金属容易附着在其它部位的上述课题。
为了达成上述目的，本发明了采用以下这样的手段。
首先，采用如下这样的树脂密封型半导体装置的制造方法，该树脂密封型半导体装置由引脚架、半导体芯片和密封树脂构成，该引脚架具有芯片安装盘和多个引脚，该树脂密封型半导体装置的制造方法的特征在于，包括以下的工序：在上述引脚架以及上述引脚的内引脚和外引脚的表面上形成金属镀层的工序；在上述芯片安装盘上安装上述半导体芯片的工序；利用金属细线连接上述半导体芯片和上述内引脚的工序；对上述芯片安装盘上的上述半导体芯片、上述金属细线和上述引脚进行树脂密封而露出上述外引脚的工序；通过激光照射来去除形成在相邻的上述外引脚之间的树脂溢料的树脂溢料去除工序；去除从上述密封树脂露出的上述金属镀层的工序；以及在上述外引脚上形成焊接镀层的工序。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述树脂溢料去除工序中，使激光的焦点偏离于上述引脚。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述金属镀层去除工序中实施轻蚀刻工序。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述引脚的内引脚和外引脚的表面上形成金属镀层的工序中，仅在上述引脚的上表面上覆盖上述金属镀层。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述引脚的内引脚与外引脚的表面上形成金属镀层的工序中，在上述引脚的上表面和侧面覆盖上述金属镀层。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述引脚的内引脚与外引脚的表面上形成金属镀层的工序中，在上述引脚的上表面、侧面和底面覆盖上述金属镀层。
另外，采用如下这样的树脂密封型半导体装置的制造方法，其特征在于，在上述引脚的内引脚与外引脚的表面上形成金属镀层的工序中，上述内引脚的表面的金属镀层与上述外引脚的表面的金属镀层分离。
另外，提供一种引脚架，其由芯片安装盘和多个引脚构成，其特征在于，至少在上述引脚的内引脚与外引脚的表面上形成有金属镀层。
另外，提供一种引脚架，其特征在于，上述金属镀层仅覆盖在上述引脚的上表面。
另外，提供一种引脚架，其特征在于，上述金属镀层覆盖在上述引脚的上表面和侧面。
另外，提供一种引脚架，其特征在于，上述金属镀层覆盖在上述引脚的上表面、侧面和底面。
此外，提供一种引脚架，其特征在于，上述内引脚的表面的金属镀层与上述外引脚的表面的金属镀层分离。
附图说明
图1是用于制造本发明第1实施方式的树脂密封型半导体装置的引脚架的俯视图。
图2是示出本发明第1实施方式的树脂密封型半导体装置的制造工序的剖视图。
图3是继图2之后示出本发明第1实施方式的树脂密封型半导体装置的制造工序的剖视图。
图4是本发明第1实施方式的树脂密封型半导体装置的平面透视图。
图5是用于制造本发明第2实施方式的树脂密封型半导体装置的引脚架的俯视图。
图6是本发明第2实施方式的树脂密封型半导体装置的平面透视图。
图7是用于制造现有的树脂密封型半导体装置的引脚架的俯视图。
图8是现有的树脂密封型半导体装置的平面透视图。
图9是用于制造本发明第3实施方式的树脂密封型半导体装置的引脚架的剖视图。
图10是用于制造本发明第4实施方式的树脂密封型半导体装置的引脚架的剖视图。
标号说明
1、21芯片安装盘；2、22引脚；3、23内引脚；4、24外引脚；5、25悬吊引脚；6、26半导体芯片；7、27金属细线；8第1金属镀层；9第2金属镀层；10、30焊接镀层；11、31密封树脂；12、32连杆；13激光照射；14、34附着金属；20、40引脚架；28金属镀层。
具体实施方式
参照附图来说明本发明的树脂密封型器件的制造方法的第1实施方式。
图1是用于制造本发明第1实施方式的树脂密封型半导体装置的引脚架的俯视图。引脚架20由以下的部件构成：四边形的外框；四边形的芯片安装盘1，其设置在外框包围的区域的大致中央部，载置半导体芯片；悬吊引脚5，其连接外框和芯片安装盘1；内引脚3，其在载置有半导体芯片的状态下通过金属细线等连接单元与半导体芯片电连接；以及外引脚4，其与内引脚3连续地设置，用于与外部端子连接。多个引脚2通过连杆12相互连结。在芯片安装盘1的整个区域以及引脚2的整个区域即从内引脚3到外引脚4直至连杆12附近连续地覆盖由银等构成的金属镀层8。此时，金属镀层8也可以到达连杆12。另外，虚线包围的部分为被密封树脂11密封的区域。此外，关于引脚架20，由图1所示的结构构成的图案并非一个，而是在左右上下连续地排列多个。
图2以及图3是示出本发明第1实施方式的树脂密封型半导体装置的制造工序的剖视图，示出了图1的A-A处的截面。
图2（a）是用于制造本发明第1实施方式的树脂密封型半导体装置的引脚架的剖视图。芯片安装盘1和引脚2分离地配置，它们的表面由金属镀层8覆盖。
图2（b）中，在芯片安装盘1的表面通过粘结剂（未图示）安装半导体芯片6，利用金属细线7将半导体芯片6表面的电极（未图示）和引脚2进行电连接。
图3（c）是利用密封树脂11来密封芯片安装盘1上的半导体芯片6、与引脚2连接的金属细线7的工序后的剖视图。构成为，芯片安装盘1的底面、引脚2的一部分从密封树脂11露出。另外，引脚2上的金属镀层8的一部分也从密封树脂11露出。在现有的密封树脂型半导体装置中，金属镀层由密封树脂完全密封，但在本发明中，构成为，金属镀层8的区域比现有的密封树脂型半导体装置宽，从密封树脂露出。
图3（d）是示出在树脂密封工序中通过激光照射13来去除从上模具与下模具的间隙溢出并形成在相邻的外引脚间的树脂溢料的工序的剖视图。激光以在引脚2上不聚焦的方式使焦点偏离于引脚2（散焦）。优选在高于引脚上表面的位置处具有激光焦点。由此，可防止激光能量集中于一点，而在宽范围内照射能量密度衰减的激光，从而通过激光照射13来高效率地去除树脂溢料并且能够抑制引脚架的一部分熔化后飞散。此时，仅有很少的飞散的附着金属14附着于金属镀层8上。在树脂溢料未完全去除的情况下，通过在激光照射之后追加碱处理或喷水处理等来将其完全去除。
图3（e）是去除在前一工序中产生的金属镀层8上的附着金属并重新覆盖形成焊接镀层10后的剖视图。密封树脂11成为掩模，引脚上的从密封树脂11露出的金属镀层8被完全去除，此时，附着金属从引脚上去掉。此外，金属去除工序由用于对金属镀层进行蚀刻的去镀层工序、轻蚀刻（light etching）工序构成，在去镀层工序中未去除的少许残渣在之后的轻蚀刻工序中进行去除。此外，当金属镀层是银镀层时，在去镀层工序中采用硝酸铁溶液、トップリップ（奥野制药工业公司制造）等，在框架是铜的情况下，在轻蚀刻工序中采用氯化铁溶液、メルポリッシュ（メルテック公司制）等。在焊接镀层的成膜工序中，形成以锡为主成分并添加铋或银后的覆膜。
图3（f）是示出切割包含连杆的引脚架外框并从引脚架的外框分离树脂密封型半导体装置后的状态的剖视图。如图所示，在引脚2的底面与外引脚4的上表面覆盖焊接镀层10，单片化时的切割面即外引脚4的侧端面没有被覆盖。
图4是本发明第1实施方式的树脂密封型半导体装置的平面透视图。
在芯片安装盘1上安装半导体芯片6，利用金属细线7连接半导体芯片6表面的电极（未图示）和内引脚3，以使外引脚4露出的方式利用密封树脂11密封半导体芯片6、金属细线7等。在外引脚4的上表面覆盖焊接镀层10。
经过以上的工序，完成了本发明的树脂密封型半导体装置，其能够解决由于对被加工部照射激光而发热/熔化的一部分金属容易附着在其它部位上的课题。
图5是用于制造本发明第2实施方式的树脂密封型半导体装置的引脚架的俯视图。与图1所示的引脚架的差别是引脚上表面的金属镀层。在本实施方式中，内引脚上的金属镀层即第1金属镀层8和外引脚上的第2金属镀层9分离地配置。通过采用这样的引脚架，金属镀层不再从密封树脂端露出，成为可靠性良好的树脂密封型半导体装置。
图6是本发明第2实施方式的树脂密封型半导体装置的平面透视图。
在芯片安装盘1上安装半导体芯片6，利用金属细线7连接半导体芯片6表面的电极（未图示）和内引脚3，以使外引脚4露出的方式利用密封树脂11密封半导体芯片6、金属细线7等。在外引脚4的上表面覆盖焊接镀层10，但是，内引脚3上的第1金属镀层8与外引脚4上的焊接镀层10分离，第1金属镀层8被密封树脂11完全密封，不从其端面露出，所以可靠性提高。
针对在引脚的上表面覆盖金属镀层的实施例进行了以上的说明，但除了上表面以外，还可以在引脚的侧面也覆盖金属镀层，或者，可以在引脚底面覆盖金属镀层，由此能够更可靠地去除附着金属。
图9是用于制造本发明第3实施方式的树脂密封型半导体装置的引脚架的剖视图，除了引脚的上表面以外，在引脚2侧面以及底面也覆盖金属镀层8。在图9（a）中，仅在芯片安装盘1的上表面覆盖金属镀层8，在图9（b）中，与引脚2同样地在侧面以及底面也设置金属镀层8。
图10是用于制造本发明第4实施方式的树脂密封型半导体装置的引脚架的剖视图，是第2实施方式的变形例。除了引脚的上表面以外，在引脚2侧面以及底面也覆盖金属镀层8。在图10（a）中，仅在芯片安装盘1的上表面分离地配置第1金属镀层8和第2金属镀层9，在图10（b）中，与引脚2同样地在侧面以及底面也设置金属镀层8。

Claims (12)

1.一种树脂密封型半导体装置的制造方法，其特征在于，包括以下的工序：
准备具有芯片安装盘以及多个引脚的引脚架的工序，该多个引脚分别包括内引脚和外引脚；
在所述芯片安装盘以及所述多个引脚的所述内引脚和外引脚的表面形成金属镀层的工序；
在形成有所述金属镀层的所述芯片安装盘上安装半导体芯片的工序；
利用金属细线连接所述半导体芯片和所述内引脚的工序；
利用密封树脂对所述芯片安装盘上的所述半导体芯片、所述金属细线和所述内引脚进行树脂密封而露出所述外引脚的工序；
通过激光照射去除形成在相邻的所述外引脚之间的树脂溢料的树脂溢料去除工序；
去除从所述密封树脂露出的所述金属镀层的金属镀层去除工序；以及
在已去除所述金属镀层的所述外引脚上形成焊接镀层的工序。
2.根据权利要求1所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述树脂溢料去除工序中，使激光的焦点偏离于所述引脚。
3.根据权利要求1或2所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述金属镀层去除工序中实施轻蚀刻工序。
4.根据权利要求1或2所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述内引脚和外引脚的表面上形成金属镀层的工序中，仅在所述引脚的上表面覆盖所述金属镀层。
5.根据权利要求1或2所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述内引脚与外引脚的表面上形成金属镀层的工序中，在所述引脚的上表面和侧面覆盖所述金属镀层。
6.根据权利要求1或2所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述内引脚与外引脚的表面上形成金属镀层的工序中，在所述引脚的上表面、侧面和底面覆盖所述金属镀层。
7.根据权利要求1或2所述的树脂密封型半导体装置的制造方法，其特征在于，
在所述内引脚与外引脚的表面上形成金属镀层的工序中，使所述内引脚的表面的金属镀层与所述外引脚的表面的金属镀层分离。
8.一种引脚架，其具有芯片安装盘以及多个引脚，该多个引脚分别包括内引脚和外引脚，该引脚架的特征在于，
在所述内引脚和外引脚的表面上形成有同一金属镀层。
9.根据权利要求8所述的引脚架，其特征在于，
所述金属镀层仅覆盖在所述引脚的上表面上。
10.根据权利要求8所述的引脚架，其特征在于，
所述金属镀层覆盖在所述引脚的上表面和侧面。
11.根据权利要求8所述的引脚架，其特征在于，
所述金属镀层覆盖在所述引脚的上表面、侧面和底面。
12.根据权利要求9至11中的任意一项所述的引脚架，其特征在于，
所述内引脚的表面的金属镀层与所述外引脚的表面的金属镀层分离。
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