TW201347034A - 基板之分離方法及分離裝置 - Google Patents

基板之分離方法及分離裝置 Download PDF

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TW201347034A
TW201347034A TW102106790A TW102106790A TW201347034A TW 201347034 A TW201347034 A TW 201347034A TW 102106790 A TW102106790 A TW 102106790A TW 102106790 A TW102106790 A TW 102106790A TW 201347034 A TW201347034 A TW 201347034A
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substrate
semiconductor wafer
adhesive layer
adhesive
peripheral portion
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TWI529799B (zh
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Noriko Shimizu
Shinya Takyu
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Toshiba Kk
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Abstract

本發明提供一種可不使各基板破損、且於短時間內將經由接著劑而貼合之2片基板分離之方法及裝置。實施形態之基板分離方法係將於表面之除周緣部以外之區域形成有剝離層16的第1基板10與經由接著劑層12而貼合於第1基板10之表面之至少包含剝離層16之區域的第2基板14分離之方法。該方法包括：去除步驟，其係將第2基板14周緣部以至少露出其正下方之接著劑層12表面，且接著劑層12殘留於第1基板10之周緣部與第2基板14之間而保持第1及第2基板10、14間之接著之方式物理性地去除；及溶解步驟，其係於去除步驟後溶解接著劑層12。

Description

基板之分離方法及分離裝置 [相關申請案]
本申請案享有以日本專利申請案2012-68287號(申請日：2012年3月23日)為基礎申請案之優先權。本申請案藉由參考該基礎申請案而包含基礎申請案之所有內容。
本發明之實施形態係關於一種基板之分離方法及分離裝置。
作為使半導體晶圓薄化之方法，已知有以接著劑將半導體晶圓貼合於厚支持基板上而進行研磨之方法。藉由貼合於厚支持基板上，可良好地保持研磨時之半導體晶圓之平坦度，且可使半導體晶圓均勻地薄化至50~100 μm之厚度為止。經薄化之半導體晶圓係保持著貼合於支持基板之狀態對研磨面實施電路圖案形成等所需之加工後，自支持基板剝離，經過切割而實現晶片化。
如此，於上述方法中，必需於薄化後將半導體晶圓自支持基板分離。然而，經薄化之半導體晶圓顯然機械強度小，容易破損。因此，要求可不使半導體晶圓破損而進行分離之技術。另一方面，該分離作業對半導體晶片之生產性產生較大影響，若作業耗費時間則生產性會下降。因此，要求可於短時間內分離半導體晶圓之技術。
再者，如此利用接著劑將2片基板貼合後，其後再次分離為各個基板之技術並不限定於上述半導體晶圓與支持基板之例，而廣泛地用 於各種領域中，對於其等而言亦同樣地要求可不損傷基板、且能於短時間內進行分離之技術。
本發明之目的在於提供一種可不使各基板破損、且於短時間內將經由接著劑而貼合之2片基板分離之方法及裝置。
實施形態之基板分離方法係將於表面之除周緣部以外之區域形成有剝離層的第1基板與經由接著劑層而貼合於上述第1基板之表面之至少包含上述剝離層之區域的第2基板分離者；且其包括：去除步驟，其係將上述第2基板周緣部以至少露出其正下方之上述接著劑層表面，且上述接著劑層殘留於上述第1基板之周緣部與上述第2基板之間而保持上述第1及第2基板間之接著之方式物理性地去除；及溶解步驟，其係於上述去除步驟後溶解上述接著劑層。
實施形態之基板分離裝置係將於表面之除周緣部以外之區域形成有剝離層的第1基板與經由接著劑層而貼合於上述第1基板之表面之至少包含上述剝離層之區域的第2基板分離者；且其包括：去除機構，其物理性地去除上述第2基板周緣部；及供給機構，其對藉由上述去除機構而去除周緣部後之第2基板之周圍供給溶解上述接著劑層之溶解液。
10‧‧‧支持基板
12‧‧‧接著劑層
14‧‧‧半導體晶圓
16‧‧‧剝離層
20‧‧‧貼合基板
21‧‧‧剝離層形成區域
23‧‧‧非剝離層形成區域
30‧‧‧刀片
D‧‧‧距離
W1‧‧‧寬度
W2‧‧‧寬度
圖1(a)~(d)係表示第1實施形態之基板分離方法之概略剖面圖。
圖2係表示第1實施形態之變化例之概略剖面圖。
圖3係表示第1實施形態之變化例之概略剖面圖。
圖4係表示第1實施形態之變化例之概略剖面圖。
圖5(a)~(d)係表示第2實施形態之基板分離方法之概略剖面圖。
圖6係表示第2實施形態之變化例之概略剖面圖。
以下，參照圖式對實施形態進行說明。再者，於以下之圖式之記載中，對相同元件或具有相同功能之元件標註相同符號，且省略重複之說明。又，於以下所說明之實施形態中，均以分離之2片基板中之一者為半導體晶圓、另一者為支持半導體晶圓之支持基板的情形為例進行說明，但毫無疑問的是，只要為必需以接著劑貼合2片基板，其後，對該等基板實施所需之處理後，再次分離成2片基板者，則可不限定於半導體晶圓及支持基板之例而廣泛地應用。
(第1實施形態)
圖1係依序表示第1實施形態之基板分離方法之步驟之概略剖面圖。再者，圖1及其之後所示之圖式之任一者均僅表示分離之2片基板(半導體晶圓及支持基板)之周緣部及其附近。
如圖1(a)所示，本實施形態之基板分離方法係將包含玻璃、矽等之支持基板(第1基板)10與經由接著劑層12而貼合於該支持基板10之表面之半導體晶圓(第2基板)14分離的基板分離方法。
支持基板10係具有於對半導體晶圓實施薄化或電路圖案形成等加工時、或者為了進行加工而搬送半導體晶圓時，對半導體晶圓14之機械強度等進行加強補充，又，保持其平坦度之功能者，作為其材質，除上述玻璃、矽以外，亦可列舉氧化鋁、碳化矽、鋁、不鏽鋼、樹脂等。支持基板10之形狀係根據所支持之半導體晶圓14之形狀而適當地決定，又，其厚度係根據材質或所要求之強度等而適當地決定。
於支持基板10之一主面(表面)之中央區域(亦稱作剝離層形成區域)21設置有包含對接著劑層12不顯示接著性之非剝離性樹脂等的剝離層16。即，支持基板10之表面包括中央部之形成有剝離層16之剝離層形成區域21與周緣部之非剝離層形成區域23。
剝離層16較佳為於藉由接著劑層12而貼合於支持基板10之表面之半導體晶圓14不會於薄化等加工時或搬送時產生剝離之範圍內，儘量以大面積形成。雖然亦取決於接著劑相對於半導體晶圓14或支持基板10之接著力等，但通常自其外緣至接著劑層12之外緣為止之距離(D)較佳為成為1.0~4.0 mm左右之範圍，更佳為成為2.0~3.5 mm左右之範圍，進而較佳為2.5~3.0 mm左右。若距離(D)未達1.0 mm，則有於加工或搬送時半導體晶圓14自支持基板10剝離之虞，若距離(D)超過4.0 mm，則於下述去除步驟中之半導體晶圓14周緣部之去除寬度會變寬，半導體晶圓14之半導體元件或電路圖案之形成區域變窄。又，其結果為，自1片半導體晶圓14所獲取之半導體晶片之數量變少。
半導體晶圓14並無特別限定，既可為具有定向平面者，亦可為具有凹口者。又，周緣部之形狀亦無特別限定，以平面、曲面、或該等之組合中之任一者形成均可。作為半導體晶圓14之材質，例如，可列舉矽、藍寶石、GaAs(砷化鎵)等半導體材料。雖然省略了圖示但半導體晶圓14亦可於與支持基板10相對向之面(表面)上形成電路圖案、或形成電路圖案及半導體元件。該等電路圖案及半導體元件係形成於較下述去除步驟中所去除之周緣部更靠內側之區域。
接著劑層12之材料係使用可溶解於有機溶劑之以例如丙烯酸系樹脂、烴系樹脂(聚環烯烴樹脂、萜烯樹脂、石油樹脂等)、酚醛型酚樹脂等作為主成分之接著劑。藉由將此種接著劑塗佈於半導體晶圓14或支持基板10、較佳塗佈於半導體晶圓14之表面而形成接著劑層12。接著劑之塗佈例如可一面使半導體晶圓14(或支持基板10)旋轉一面使用旋轉塗佈機等塗佈裝置而進行。藉此，可形成例如5~100 μm左右之厚度均勻之接著劑層12。接著劑既可單獨使用1種，亦可混合使用2種以上。就防止加工時或搬送時之半導體晶圓14之破損之觀點而言，接著劑層12較佳為形成於半導體晶圓14之整個表面。
本實施形態之基板分離方法係對如上所述之於支持基板10之表面上經由接著劑層12貼合半導體晶圓14而成之基板(以下，稱作貼合基板20)以如下方式進行。
首先，如圖1(b)所示，一面使上述貼合基板20旋轉，一面使用切割刀片等刀片30將半導體晶圓14之周緣部以至少露出其正下方之接著劑層12表面，且接著劑層12殘留於支持基板10之周緣部與半導體晶圓14之間而保持支持基板10與半導體晶圓14間之接著之方式去除。於本實施形態中，保留半導體晶圓14周緣部、且於俯視時為剝離層16之外側、距離剝離層16之外緣例如寬度(w)為0.5 mm之部分，而與其正下方之接著劑一併去除。
再者，於圖1(b)所示之例中，接著劑係藉由刀片30將所去除之半導體晶圓14周緣部正下方之接著劑至大致達到支持基板10之表面為止大致完全地去除，但如上所述，接著劑層12只要至少露出其表面即可。因此，例如，可如圖2所示，亦可不去除接著劑而僅去除半導體晶圓14之周緣部，又，如圖3所示，亦可去除接著劑層12之厚度之例如一半左右。就縮短分離時間之觀點而言，較佳為大致完全地去除半導體晶圓14周緣部正下方之接著劑。
進而，如圖4所示，亦可利用刀片30切入至支持基板10。該方法不可應用於支持基板10包含玻璃類之情形，又，由於支持基板10之一部分被切除，故而無法如另一例般對支持基板10進行再利用，但於接著劑層12之厚度較薄(例如，20 μm以下)，難以選擇性地去除半導體晶圓14、或半導體晶圓14及接著劑層12之情形時較為有用。以刀片30切入之深度較佳為設為不損壞支持基板10之深度。
其次，如圖1(c)所示，使接著支持基板10與半導體晶圓14之接著劑層12溶解。溶解例如可藉由以下方式進行：藉由噴嘴等將溶解接著劑之有機溶劑供給至接著劑層12之周圍，詳細而言為藉由去除半導體 晶圓14周緣部而露出之接著劑層之露出面附近。此時，較佳為一面使貼合基板20以緩慢之速度旋轉一面進行。藉由使貼合基板20以緩慢之速度旋轉，可防止溶解之接著劑之滯留，可高效地溶解接著劑。
作為接著劑之溶解所使用之有機溶劑，例如，可列舉：對薄荷烷、d-檸檬烯、對薄荷烷、丙酮、甲基乙基酮、環己酮、甲基異戊酮、2-庚酮、N-甲基-2-吡咯啶酮等酮類；乙二醇、乙二醇單乙酸酯、二乙二醇、二乙二醇單乙酸酯、丙二醇、丙二醇單乙酸酯、二丙二醇或二丙二醇單乙酸酯之單甲醚、單乙醚、單丙醚、單丁醚或單苯醚等多元醇類及其衍生物；如二烷之環醚類；以及乳酸甲酯、乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類；均三甲苯等烴類等。只要根據所使用之接著劑而自其等之中適當選擇1種以上使用即可。
於該溶解步驟中，無需使介於支持基板10與半導體晶圓14之間之接著劑層12全部溶解，只要使殘留於剝離層16之外側之部分之接著劑、即殘留於支持基板10之非剝離層形成區域23上之接著劑溶解即可。由於接著劑層12與剝離層16未接著，故而藉由使剝離層16之外側部分之接著劑溶解，而如圖1(d)所示般可於接著劑層12與剝離層16之界面分離貼合基板20。再者，只要可分離，則非剝離層形成區域23上之接著劑之溶解可為局部溶解。因此，此處，「溶解」這一用語亦包括此種局部溶解。
於以此方式分離之半導體晶圓14上附著有接著劑或接著劑之溶解物，另一方面，於支持基板10之表面、包括剝離層16之表面在內，亦附著有一些接著劑溶解物，視情形而附著有接著劑，故而於上述溶解步驟後，視需要分別對半導體晶圓14及支持基板10進行清洗而去除附著之接著劑或接著劑溶解物。藉此，可獲得去除了接著劑或接著劑溶解物之半導體晶圓、及具備剝離層之支持基板，半導體晶圓被送至 其後之半導體晶片之製造步驟。又，具備剝離層之支持基板可再次用作半導體晶圓之支持基板。再者，於清洗接著劑或接著劑溶解物時，可使用與溶解步驟中所使用者相同之有機溶劑。
於本實施形態中，藉由刀片30將支持基板10表面之剝離層16之外側區域、非剝離層形成區域23上之半導體晶圓14周緣部以至少露出其正下方之接著劑層12表面，且接著劑層12殘留於支持基板10之周緣部與半導體晶圓14之間而保持支持基板10與半導體晶圓14間之接著之方式物理性地去除，此後使介於支持基板10與半導體晶圓14間之接著劑層12溶解，故而可使支持基板10及半導體晶圓14均不破損地於短時間內進行分離。
即，於對於上述貼合基板20不去除半導體晶圓14周緣部而進行接著劑層12之溶解步驟之情形時，必需使溶解接著劑之有機溶劑自露出於貼合基板20之周面之厚度微小之接著劑層12的周面向內部浸透直至至少到達剝離層16之外緣，從而進行溶解，雖然亦取決於接著劑或有機溶劑之種類，但非常耗時。根據本發明者等人實際進行之實驗，例如，於接著劑層12之厚度為30 μm，自其外緣至剝離層16之外緣為止之距離為3 mm之情形時，自開始供給有機溶劑起至接著劑層12變為可分離之溶解狀態為止需要20~30小時。相對於此，於本實施形態(將接著劑層之距離剝離層16外緣之剩餘寬度(W)設為約0.5 mm，於去除步驟中大致完全地去除其外側之接著劑之情形)中，使接著劑層12於25~35分鐘內溶解。
又，於半導體晶圓14周緣部之去除步驟中，可使用半導體晶圓之加工中一般所使用之切割刀片等刀片，故而半導體晶圓14及支持基板10均無破損之虞。
進而，由於如此無支持基板10之破損之虞，故而除圖4所示之情形以外，可充分地進行再利用。
又，由於在去除步驟中藉由刀片30去除半導體晶圓14之周緣部，可獲得與實施邊緣修整加工相同之效果，故而可省去其他步驟中之對半導體晶圓之邊緣修整加工。即，即便不使用預先經邊緣修整加工之半導體晶圓，亦可抑制分離後之晶圓破裂、晶圓缺損。
再者，於本實施形態中，使用刀片30作為半導體晶圓14周緣部之去除機構，但只要為可不損傷半導體晶圓14而物理性地去除其周緣部者即可，並不特別限定於刀片。
(第2實施形態)
圖2係依序表示第2實施形態之基板分離方法之步驟之概略剖面圖。
如圖5(a)所示，本實施形態之基板分離方法與第1實施形態同樣地係對在支持基板10之表面上經由接著劑層12貼合半導體晶圓14而成之基板20進行分離之方法。
又，本實施形態中，於去除步驟中，與第1實施形態同樣地，一面使上述貼合基板20旋轉，一面使用切割刀片等刀片30，將半導體晶圓14之周緣部以至少露出其正下方之接著劑層12表面，且接著劑層12殘留於支持基板10之周緣部與半導體晶圓14之間而保持支持基板10與半導體晶圓14間之接著之方式去除。
然而，於第1實施形態中，去除半導體晶圓14周緣部且於俯視時較剝離層16更靠外側之部分，相對於此，於本實施形態中，自剝離層16之內側、自剝離層16之外緣向內側進入例如0.5 mm處將外側部分與其正下方之接著劑一併去除。而且，為了使接著劑確保支持基板10與半導體晶圓14間之接著，故而殘留接著劑層12之厚度之一半左右而去除。
再者，只要能確保支持基板10與半導體晶圓14間之接著，殘留之接著劑層12之厚度亦可更薄，反之亦可更厚。即，例如，如圖6所 示，亦可不去除接著劑而僅去除半導體晶圓10之周緣部。然而，為了確保支持基板10與半導體晶圓14間之接著，與第1實施形態不同，必需於支持基板10上殘留接著劑。因此，雖然亦取決於接著劑之種類，但接著劑層12一般而言較佳為厚度為20 μm以上。
此種去除步驟後之步驟、即圖5(c)及其之後之步驟與第1實施形態之圖1(c)及其之後之步驟相同，而省略說明。
於第2實施形態中，亦藉由刀片30將半導體晶圓14周緣部以至少露出其正下方之接著劑層12表面，且接著劑層12殘留於支持基板10之周緣部與半導體晶圓14之間而保持支持基板10與半導體晶圓14間之接著之方式物理性地去除，此後使介於支持基板10與半導體晶圓14間之接著劑層溶解，故而可使支持基板10及半導體晶圓14均不破損地於短時間內分離。
尤其，於本實施形態中，由於將半導體晶圓14周緣部去除至剝離層16之內側為止，故而可較第1實施形態進而縮短接著劑之溶解時間，而可於更短時間內將支持基板10及半導體晶圓14分離。根據本發明者等人實際進行之實驗，於接著劑層12之厚度為30 μm，自其外緣至剝離層16之外緣為止之距離為3 mm之情形時，自開始供給溶劑起僅10~15分鐘內接著劑層12即變為可分離之溶解狀態。接著劑係使用與上述第1實施形態之實驗中所使用者相同之接著劑，且以相同之方法供給。
又，於本實施形態中，分離後之支持基板10亦可再次用作半導體晶圓之支持基板。
進而，由於在去除步驟中藉由刀片30去除半導體晶圓之周緣部，而可獲得與實施邊緣修整加工相同之效果，故而可省去其他步驟中之對半導體晶圓之邊緣修整加工。
根據以上所說明之至少一個實施形態，藉由刀片等將支持基板 之剝離層之外側區域、非剝離層形成區域上之半導體晶圓周緣部以至少露出其正下方之接著劑層表面，且接著劑層殘留於支持基板之周緣部與半導體晶圓之間而保持支持基板與半導體晶圓間之接著之方式物理性地去除，此後使介於支持基板與半導體晶圓間之接著劑層溶解，故而可使支持基板及半導體晶圓均不破損地於短時間內分離。又，由於在去除步驟中去除了半導體晶圓之周緣部，而可獲得與實施邊緣修整加工相同之效果，故而可省去其他步驟中之對半導體晶圓之邊緣修整加工。
已對本發明之若干個實施形態進行了說明，但該等實施形態係作為示例而提示者，並不意圖限定發明之範圍。該等新穎之實施形態能夠以其他各種形態實施，且可於不脫離發明主旨之範圍內進行各種省略、替換、變更。該等實施形態及其變形包含於發明之範圍或主旨內，並且包含於申請專利範圍所記載之發明及其均等之範圍內。
10‧‧‧支持基板
12‧‧‧接著劑層
14‧‧‧半導體晶圓
16‧‧‧剝離層
20‧‧‧貼合基板
21‧‧‧剝離層形成區域
23‧‧‧非剝離層形成區域
30‧‧‧刀片
D‧‧‧距離
W1‧‧‧寬度

Claims (6)

  1. 一種基板分離方法，其特徵在於：其係將於表面之除周緣部以外之區域形成有剝離層的第1基板與經由接著劑層而貼合於上述第1基板之表面之至少包含上述剝離層之區域的第2基板分離者；且包括：去除步驟，其係將上述第2基板周緣部以至少露出其正下方之上述接著劑層表面，且上述接著劑層殘留於上述第1基板之周緣部與上述第2基板之間而保持上述第1及第2基板間之接著之方式物理性地去除；及溶解步驟，其係於上述去除步驟後溶解上述接著劑層。
  2. 如請求項1之基板分離方法，其中以去除後之上述第2基板之外緣於俯視時位於較上述剝離層之外緣更靠外側之方式，於上述去除步驟中去除上述第2基板周緣部。
  3. 如請求項2之基板分離方法，其中於上述去除步驟中，將上述第2基板周緣部上之接著劑去除至上述第2基板附近為止。
  4. 如請求項1之基板分離方法，其中以去除後之上述第2基板之外緣於俯視時位於較上述剝離層之外緣更靠內側之方式，於上述去除步驟中去除上述第2基板周緣部。
  5. 如請求項1至4中任一項之基板分離方法，其中上述接著劑層之厚度為5~100 μm。
  6. 一種基板分離裝置，其特徵在於：其係將於表面之除周緣部以外之區域形成有剝離層的第1基板與經由接著劑層而貼合於上述第1基板之表面之至少包含上述剝離層之區域的第2基板分離者；且包括：去除機構，其物理性地去除上述第2基板周緣部；及 供給機構，其對藉由上述去除機構去除周緣部後之第2基板之周圍供給溶解上述接著劑層之溶解液。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717768B (zh) * 2019-03-18 2021-02-01 日商東芝記憶體股份有限公司 半導體裝置之製造方法及半導體裝置

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
WO2014003056A1 (ja) * 2012-06-29 2014-01-03 日立化成株式会社 半導体装置の製造方法
KR20140122677A (ko) * 2013-04-09 2014-10-20 주식회사 엘지화학 폴리이미드계 필름 및 이의 제조방법
FR3015110B1 (fr) * 2013-12-17 2017-03-24 Commissariat Energie Atomique Procede de fabrication d’un substrat-poignee destine au collage temporaire d’un substrat
CN105206506B (zh) * 2014-06-30 2018-06-29 中芯国际集成电路制造(上海)有限公司 晶圆的处理方法
JP6457223B2 (ja) 2014-09-16 2019-01-23 東芝メモリ株式会社 基板分離方法および半導体製造装置
DE102014113361A1 (de) * 2014-09-17 2016-03-17 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat
JP2016063012A (ja) 2014-09-17 2016-04-25 株式会社東芝 半導体装置の製造方法
US10522383B2 (en) 2015-03-25 2019-12-31 International Business Machines Corporation Thermoplastic temporary adhesive for silicon handler with infra-red laser wafer de-bonding
DE102015006971A1 (de) * 2015-04-09 2016-10-13 Siltectra Gmbh Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern
KR102385339B1 (ko) * 2015-04-21 2022-04-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN104992944B (zh) * 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
CN108231646A (zh) * 2016-12-13 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US10446431B2 (en) * 2017-12-27 2019-10-15 Micron Technology, Inc. Temporary carrier debond initiation, and associated systems and methods
CN108687816B (zh) * 2018-05-18 2019-08-02 合肥京东方显示光源有限公司 膜材裁切方法、裁切装置、复合膜材、背光模组和显示装置
KR102454447B1 (ko) * 2018-05-25 2022-10-17 세메스 주식회사 기판 처리 장치 및 방법
CN110838462B (zh) * 2018-08-15 2022-12-13 北科天绘(合肥)激光技术有限公司 一种器件阵列的巨量转移方法及系统
JP7182975B2 (ja) * 2018-09-26 2022-12-05 キヤノン株式会社 液体吐出ヘッド用基板の製造方法
JP7349784B2 (ja) * 2018-12-26 2023-09-25 東京エレクトロン株式会社 基板処理システム、および基板処理方法
JP7362378B2 (ja) * 2019-09-12 2023-10-17 株式会社東芝 キャリア及び半導体装置の製造方法
FR3103313B1 (fr) * 2019-11-14 2021-11-12 Commissariat Energie Atomique Procédé de démontage d’un empilement d’au moins trois substrats
CN111755377B (zh) * 2020-06-29 2022-02-11 西安微电子技术研究所 一种晶圆解键合方法
CN111834280A (zh) * 2020-07-24 2020-10-27 武汉新芯集成电路制造有限公司 临时键合方法
CN115140700A (zh) * 2021-03-30 2022-10-04 诺思(天津)微系统有限责任公司 半导体组件及其切割方法、滤波器及电子设备

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
US6380132B1 (en) * 1999-01-28 2002-04-30 Dai Nippon Printing Co., Ltd. Thermal transfer image-receiving sheet and process for producing the same
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
JP3768069B2 (ja) * 2000-05-16 2006-04-19 信越半導体株式会社 半導体ウエーハの薄型化方法
JP2002075937A (ja) * 2000-08-30 2002-03-15 Nitto Denko Corp 半導体ウエハの加工方法
EP1188570B1 (en) * 2000-09-14 2007-05-09 Dai Nippon Printing Co., Ltd. Intermediate transfer recording medium and method for image formation
DE10048881A1 (de) * 2000-09-29 2002-03-07 Infineon Technologies Ag Vorrichtung und Verfahren zum planen Verbinden zweier Wafer für ein Dünnschleifen und ein Trennen eines Produkt-Wafers
EP1207015A3 (en) * 2000-11-17 2003-07-30 Keltech Engineering, Inc. Raised island abrasive, method of use and lapping apparatus
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP4565804B2 (ja) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
JP4107417B2 (ja) * 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
TWI327336B (en) * 2003-01-13 2010-07-11 Oc Oerlikon Balzers Ag Arrangement for processing a substrate
US20060194412A1 (en) * 2004-04-07 2006-08-31 Takehito Nakayama Method and device for sticking tape
JP4447280B2 (ja) * 2003-10-16 2010-04-07 リンテック株式会社 表面保護用シートおよび半導体ウエハの研削方法
JP2006316078A (ja) * 2003-10-17 2006-11-24 Lintec Corp 接着テープの剥離方法及び剥離装置
JP2006032506A (ja) 2004-07-14 2006-02-02 Taiyo Yuden Co Ltd 半導体ウェハの剥離方法および剥離装置
JP4642436B2 (ja) * 2004-11-12 2011-03-02 リンテック株式会社 マーキング方法および保護膜形成兼ダイシング用シート
JP2006288887A (ja) * 2005-04-13 2006-10-26 Nitto Denko Corp 貼付製剤
US7462552B2 (en) * 2005-05-23 2008-12-09 Ziptronix, Inc. Method of detachable direct bonding at low temperatures
US20070004171A1 (en) * 2005-06-30 2007-01-04 Arana Leonel R Method of supporting microelectronic wafer during backside processing using carrier having radiation absorbing film thereon
GB0602410D0 (en) * 2006-02-07 2006-03-15 Filtronic Compound Semiconduct A method of bonding a semiconductor wafer to a support substrate
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法
US20080014532A1 (en) * 2006-07-14 2008-01-17 3M Innovative Properties Company Laminate body, and method for manufacturing thin substrate using the laminate body
JP5027460B2 (ja) * 2006-07-28 2012-09-19 東京応化工業株式会社 ウエハの接着方法、薄板化方法、及び剥離方法
JP4847255B2 (ja) * 2006-08-30 2011-12-28 株式会社テオス 半導体ウエーハの加工方法
US7691225B2 (en) * 2007-01-15 2010-04-06 Nitto Denko Corporation Thermal-release double-coated pressure-sensitive adhesive tape or sheet and method of processing adherend
KR101161600B1 (ko) * 2007-10-22 2012-07-03 가부시키가이샤 닛폰 쇼쿠바이 편광판, 그 제조 방법, 광학 필름 및 화상 표시 장치
US7566632B1 (en) * 2008-02-06 2009-07-28 International Business Machines Corporation Lock and key structure for three-dimensional chip connection and process thereof
CN101982028A (zh) * 2008-03-28 2011-02-23 日立化成工业株式会社 配线板的制造方法、光电复合部件的制造方法以及光电复合基板的制造方法
JP4723614B2 (ja) * 2008-06-06 2011-07-13 リンテック株式会社 シート貼付装置及び貼付方法
JP2010114306A (ja) * 2008-11-07 2010-05-20 Disco Abrasive Syst Ltd ウェーハの移し替え方法
JP5555430B2 (ja) 2009-01-28 2014-07-23 新日本無線株式会社 半導体装置の製造方法
JP2010225852A (ja) 2009-03-24 2010-10-07 Panasonic Corp 半導体素子及びその製造方法
US8950459B2 (en) * 2009-04-16 2015-02-10 Suss Microtec Lithography Gmbh Debonding temporarily bonded semiconductor wafers
KR20120027237A (ko) * 2009-04-16 2012-03-21 수스 마이크로텍 리소그라피 게엠바하 웨이퍼 가접합 및 분리를 위한 개선된 장치
US8366873B2 (en) * 2010-04-15 2013-02-05 Suss Microtec Lithography, Gmbh Debonding equipment and methods for debonding temporary bonded wafers
US8871609B2 (en) * 2009-06-30 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Thin wafer handling structure and method
CN101997087B (zh) * 2009-08-17 2012-11-28 财团法人工业技术研究院 应用于软性电子器件的基板及其制造方法
US8072044B2 (en) * 2009-09-17 2011-12-06 Fairchild Semiconductor Corporation Semiconductor die containing lateral edge shapes and textures
JP5010668B2 (ja) * 2009-12-03 2012-08-29 信越化学工業株式会社 積層型半導体集積装置の製造方法
US20130140838A1 (en) * 2009-12-15 2013-06-06 Solexel, Inc. Mobile vacuum carriers for thin wafer processing
JP5448860B2 (ja) 2010-01-13 2014-03-19 東京応化工業株式会社 分離方法及び分離装置
US9064686B2 (en) * 2010-04-15 2015-06-23 Suss Microtec Lithography, Gmbh Method and apparatus for temporary bonding of ultra thin wafers
US8574398B2 (en) * 2010-05-27 2013-11-05 Suss Microtec Lithography, Gmbh Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers
JP5744434B2 (ja) * 2010-07-29 2015-07-08 日東電工株式会社 加熱剥離シート一体型半導体裏面用フィルム、半導体素子の回収方法、及び半導体装置の製造方法
JP5334135B2 (ja) * 2010-08-20 2013-11-06 ニチゴー・モートン株式会社 積層装置
JP2012064710A (ja) * 2010-09-15 2012-03-29 Asahi Glass Co Ltd 半導体素子の製造方法
EP2434528A1 (en) * 2010-09-28 2012-03-28 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO An active carrier for carrying a wafer and method for release
US9029269B2 (en) * 2011-02-28 2015-05-12 Dow Corning Corporation Wafer bonding system and method for bonding and debonding thereof
US8450188B1 (en) * 2011-08-02 2013-05-28 Micro Processing Technology, Inc. Method of removing back metal from an etched semiconductor scribe street
JP5762213B2 (ja) * 2011-08-15 2015-08-12 株式会社ディスコ 板状物の研削方法
US8865507B2 (en) * 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
US8696864B2 (en) * 2012-01-26 2014-04-15 Promerus, Llc Room temperature debonding composition, method and stack
AU2013222069A1 (en) * 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP5983519B2 (ja) * 2012-04-24 2016-08-31 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP5360260B2 (ja) * 2012-05-08 2013-12-04 Ｊｓｒ株式会社 基材の処理方法、積層体および半導体装置
JP5767161B2 (ja) * 2012-05-08 2015-08-19 信越化学工業株式会社 ウエハ加工用仮接着材、それを用いたウエハ加工用部材、ウエハ加工体、及び薄型ウエハの作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717768B (zh) * 2019-03-18 2021-02-01 日商東芝記憶體股份有限公司 半導體裝置之製造方法及半導體裝置

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