CN103325733B - 基板的分离方法以及分离装置 - Google Patents

基板的分离方法以及分离装置 Download PDF

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CN103325733B
CN103325733B CN201310063932.6A CN201310063932A CN103325733B CN 103325733 B CN103325733 B CN 103325733B CN 201310063932 A CN201310063932 A CN 201310063932A CN 103325733 B CN103325733 B CN 103325733B
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substrate
circumference
bond layer
semiconductor wafer
peel ply
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CN103325733A (zh
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清水纪子
田久真也
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Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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Abstract

提供一种能够不损伤各基板并在短时间内将经由粘接剂贴合的2张基板分离的方法以及装置。实施方式的基板分离方法，是将在表面的除了周缘部的区域形成有剥离层（16）的第1基板（10）与经由粘接剂层（12）贴合于第1基板（10）的表面的至少包含剥离层（16）的区域的第2基板（14）分离的方法。该方法包括：除去工序，该工序以至少第2基板（14）周缘部正下的粘接剂层（12）表面露出并且在第1基板（10）的周缘部与第2基板（14）之间残存有粘接剂层（12）而保持第1以及第2基板（10、14）之间的粘接的方式，将该第2基板（14）周缘部物理性除去；和溶解工序，该工序在所述除去工序后，将粘接剂层（12）溶解。

Description

基板的分离方法以及分离装置
技术领域
本申请主张基于2012年3月23日申请的日本专利申请第2012-68287号的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
本发明的实施方式涉及基板的分离方法以及分离装置。
背景技术
作为将半导体晶片薄片化的方法，将半导体晶片通过粘接剂贴合于较厚的支撑基板而切削的方法众所周知。能够良好地保持通过贴合于较厚的支撑基板而切削时的半导体晶片的平坦度，能够将半导体晶片均匀地薄片化为50～100μm的厚度。薄片化后的半导体晶片在贴合于支撑基板的状态下，对切削面实施形成电路图形等所需的加工，然后从支撑基板剥离，经切割，芯片化。
这样，在上述方法中，需要在薄片化后将半导体晶片从支撑基板分离。但是，薄片化后的半导体晶片当然机械强度较小，容易破损。因此，要求能够不使其破损地将半导体晶片分离的技术。另一方面，该分离作业较大影响半导体芯片的生产性，如果作业花时间则生产性下降。因此，要求有能够短时间将半导体晶片分离的技术。
另外，这样通过粘接剂将2张基板贴合的后再次分离为各基板的技术并不限定于上述半导体晶片与支撑基板的例子，能够在各种领域中广泛使用，对于其也同样，要求有能够不损伤基板并在短时间内分离的技术。
发明内容
本发明的目的在于提供一种能够不损伤各基板并在短时间内将经由粘接剂贴合的2张基板分离的方法以及装置。
实施方式的基板分离方法，是将在表面的除了周缘部的区域形成有剥离层的第1基板与经由粘接剂层贴合于所述第1基板的表面的至少包含所述剥离层的区域的第2基板分离的基板分离方法，其中，包括：除去工序，该工序以至少所述第2基板周缘部正下的所述粘接剂层表面露出并且在所述第1基板的周缘部与所述第2基板之间残存有所述粘接剂层而保持所述第1以及第2基板之间的粘接的方式，将所述第2基板周缘部物理性除去；和溶解工序，该工序在所述除去工序后，将所述粘接剂层溶解。
实施方式的基板分离装置，是将在表面的除了周缘部的区域形成有剥离层的第1基板与经由粘接剂层贴合于所述第1基板的表面的至少包含所述剥离层的区域的第2基板分离的基板分离装置，其中，包括：除去单元，其将所述第2基板周缘部物理性除去；和供给单元，其向通过所述除去单元将周缘部除去的第2基板的周围供给将所述粘接剂层溶解的溶解液。
附图说明
图1是表示第1实施方式中的基板分离方法的概略剖视图。
图2是表示第1实施方式的变形例的概略剖视图。
图3是表示第1实施方式的变形例的概略剖视图。
图4是表示第1实施方式的变形例的概略剖视图。
图5是表示第2实施方式中的基板分离方法的概略剖视图。
图6是表示第2实施方式的变形例的概略剖视图。
符号说明
10：支撑基板
12：粘接剂层
14：半导体晶片
16：剥离层
20：贴合基板
21：剥离层形成区域
23：剥离层非形成区域
30：刀片
具体实施方式
以下，参照附图对实施方式进行说明。另外，在以下的附图的记载中，对于同一要素或者具有同一功能的要素付与同一符号，将重复的说明省略。另外，在以下进行说明的实施方式中，都以进行分离的2张基板的一方为半导体晶片另一方为支撑半导体晶片的支撑基板的情况为例进行说明，但不用说，只要是需要通过粘接剂将2张基板贴合、然后对这些基板实施所需的处理后、再次分离为2张基板，并不限定于半导体晶片以及支撑基板的例子，能够广泛适用。
（第1实施方式）
图1是顺序表示第1实施方式的基板分离方法的工序的概略剖视图。另外，图1以及以后表示的附图都仅表示分离的2张基板（半导体晶片以及支撑基板）的周缘部及其附近。
本实施方式的基板分离方法如图1（a）所示，是将由玻璃、硅等构成的支撑基板（第1基板）10与经由粘接剂12表面性贴合于该支撑基板10的半导体晶片（第2基板）14分离的基板分离方法。
支撑基板10具有下述功能：在对半导体晶片实施薄片化和/或形成电路图形等加工时，或者为了加工而搬运半导体晶片时，对半导体晶片14的机械强度等进行加强补充，另外确保其平坦度；作为其材质，除了上述的玻璃、硅，还能够列举铝、碳化硅、氧化铝、不锈钢、树脂等。支撑基板10的形状根据所支撑的半导体晶片14的形状而适当确定，另外，其厚度根据材质和/或所要求的强度等而适当确定。
在支撑基板10的一方的主面（表面）的中央区域（也称为剥离层形成区域）21，设有由相对于粘接剂层12不显示粘接性的非剥离性树脂等构成的剥离层16。即，支撑基板10的表面含有中央部的形成有剥离层16的剥离层形成区域21与周缘部的剥离层非形成区域23。
剥离层16在通过粘接剂层12贴合于支撑基板10的表面的半导体晶片14在薄片化等加工时和/或搬运时不会剥离的范围内，优选以尽可能宽的面积形成。虽然也与粘接剂的与半导体晶片14和/或支撑基板10相对的粘接力等有关，但通常从其外边缘到粘接剂层12的外边缘的距离（D）优选为1.0～4.0mm左右的范围，更优选为2.0～3.5mm左右的范围，更优选为2.5～3.0mm左右。在距离（D）小于1.0mm时，在加工和/或搬运时具有半导体晶片14从支撑基板10剥离的危险，如果距离（D）超过4.0mm，则后述的除去工序中的半导体晶片14周缘部的除去宽度变宽，半导体晶片14的半导体元件或者电路图形的形成区域变窄。另外，结果，从1张半导体晶片14取出的半导体芯片的个数变少。
半导体晶片14没有特别限定，具有定向平面的或者具有凹口的均可。另外，周缘部的形状也没有特别限定，以平面、曲面或者它们的组合的任意一种形成均可。作为半导体晶片14的材质，可以列举例如硅、蓝宝石、GaAs（砷化镓）等半导体材料。半导体晶片14在与支撑基板10相向的面（表面）上，虽然图示省略，但也可以形成有电路图形或者电路图形与半导体元件。这些电路图形与半导体元件形成于比在后述的除去工序中除去的周缘部靠内侧的区域。
在粘接剂层12的材料中，使用将能够溶解于有机溶剂的例如丙烯系树脂、烃系树脂（聚环烯烷树脂、萜烯树脂、石油树脂等）、线型的酚醛树脂等设为主成分的粘接剂。通过将这样的粘接剂涂布于半导体晶片14或支撑基板10优选半导体晶片14的表面而形成粘接剂层12。粘接剂的涂布例如能够一边使半导体晶片14（或支撑基板10）旋转一边使用旋转涂布机等涂布装置而进行。由此，例如能够形成5～100μm左右的厚度的均匀的粘接剂层12。粘接剂可以单独使用一种也可以将2种以上混合而使用。从防止加工时和/或搬运时的半导体晶片14的破损的观点，粘接剂层12优选形成于半导体晶片14的表面整体。
本实施方式的基板分离方法相对于上述那样的在支撑基板10的表面经由粘接剂层12贴合有半导体晶片14的基板（以下，称为贴合基板20），如下进行。
首先，如图1（b）所示，一边使上述贴合基板20旋转，一边使用切割刀片等刀片30，将半导体晶片14的周缘部，以至少其正下的粘接剂层12表面露出、并且在支撑基板10的周缘部与半导体晶片14之间残存有粘接剂层12而保持支撑基板10与半导体晶片14之间的粘接的方式除去。在本实施方式中，在半导体晶片14周缘部且俯视上的剥离层16的外侧，从剥离层16的外边缘，使例如0.5mm的宽度（w）的部分残存，与其正下的粘接剂一起除去。
另外，在图1（b）所示的例子中，粘接剂通过刀片30将除去的半导体晶片14周缘部正下的粘接剂大致完全除去，直至大致到达支撑基板10的表面，但如上所述，粘接剂层12至少其表面露出即可。因此，例如，如图2所示，也可以不除去粘接剂而仅除去半导体晶片14的周缘部，另外如图3所示，也可以将粘接剂层12的厚度的例如一半左右除去。从缩短分离时间的观点，优选将半导体晶片14周缘部正下的粘接剂大致完全除去。
进而，如图4所示，也可以通过刀片30切入到支撑基板10。该方法不能适用于支撑基板10由玻璃类构成的情况，另外支撑基板10的一部分被削去，所以不能如其他的例子那样再利用支撑基板10，但在粘接剂层12的厚度较薄（例如20μm以下）、难以有选择地除去半导体晶片14或者粘接剂层12与半导体晶片14的情况下有用。通过刀片30切入的深度优选设为支撑基板10不会破损的深度。
接下来，如图1（c）所示，将粘接支撑基板10与半导体晶片14的粘接剂层12溶解。溶解例如能够通过用喷嘴等将溶解粘接剂的有机溶剂向粘接剂层12的周围、详细地说通过除去半导体晶片14周缘部而露出的粘接剂层的露出面附近供给而进行。此时，优选一边以缓慢的速度使贴合基板20旋转一边进行。通过以缓慢的速度使贴合基板20旋转，能够防止溶解的粘接剂的滞留，高效地溶解粘接剂。
作为在粘接剂的溶解中使用的有机溶剂，例如，可以列举：p-薄荷烷、d-柠檬烯、p-薄荷烷、丙酮、甲乙酮、环己酮、甲基异戊基酮、2-庚酮、N-甲基-2-吡咯烷酮等酮类；乙二醇、乙二醇单乙酸酯、二甘醇、二甘醇单乙酸酯、丙二醇、丙二醇单乙酸酯、二丙二醇或者二丙二醇单乙酸酯的单甲基醚、单乙基醚、单丙基醚、单丁基醚或者单苯基醚等多元醇类及其衍生物；二恶烷那样的环式醚类；以及乳酸甲酯、乳酸乙酯、醋酸甲酯、醋酸乙酯、醋酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸甲酯等酯类、均三甲苯等烃类等。从其中根据所使用的粘接剂而适当选择使用1种以上即可。
在该溶解工序中，不需要将存在于支撑基板10与半导体晶片14之间的粘接剂层12全部溶解，只要将残存于剥离层16的外侧的部分的粘接剂即残存于支撑基板10的剥离层非形成区域23上的粘接剂溶解即可。粘接剂层12与剥离层16没有粘接在一起，所以通过使剥离层16的外侧部分的粘接剂溶解，如图1（d）所示，能够将贴合基板20在粘接剂层12与剥离层16界面分离。另外，只要能够分离，剥离层非形成区域23上的粘接剂的溶解也可以是部分溶解。因此，在这里，所谓“溶解”的用于也包含这样的部分溶解。
在这样分离的半导体晶片14上，附着有粘接剂和/或粘接剂的溶解物，另一方面，在支撑基板10的表面，包含剥离层16的表面，也多少附着有粘接剂溶解物，有时还附着有粘接剂，所以在上述溶解工序后，根据需要，分别清洗半导体晶片14与支撑基板10，将，附着的粘接剂和/或粘接剂溶解物除去。由此，能够得到将粘接剂和/或粘接剂溶解物除去的半导体晶片以及具备剥离层的支撑基板，半导体晶片向后面的半导体芯片的制造工序输送。另外，具备剥离层的支撑基板能够再次作为半导体晶片的支撑基板而使用。另外，在粘接剂和/或粘接剂溶解物的清洗中，能够使用与在溶解工序中使用的同样的有机溶剂。
在本实施方式中，通过刀片30物理性地，以至少半导体晶片14周缘部正下的粘接剂层12表面露出并且在支撑基板10的周缘部与半导体晶片14之间残存有粘接剂层12而保持支撑基板10与半导体晶片14之间的粘接的方式，将支撑基板10的表面的剥离层16的外侧区域、剥离层非形成区域23上的半导体晶片14周缘部除去，然后使存在于支撑基板10与半导体晶片14之间的粘接剂层12溶解，所以能够同时不使它们破损地将支撑基板10以及半导体晶片14短时间分离。
即，在对上述贴合基板20不除去半导体晶片14周缘部而进行粘接剂层12的溶解工序的情况下，需要使溶解粘接剂的有机溶剂从在贴合基板20的周面露出的很小厚度的粘接剂层12的周面向内部浸透直至至少到达剥离层16的外边缘，虽然与粘接剂和/或有机溶剂的种类有关，但非常花费时间。根据本发明者实际进行的实验，例如，在粘接剂层12的厚度为30μm、从其外边缘到剥离层16的外边缘的距离为3mm的情况下，从有机溶剂供给开始到粘接剂层12变为能够分离的溶解状态为止需要20～30小时。与此相对，在本实施方式（将粘接剂层的距剥离层16外边缘的残存宽度（W）设为越0.5mm、在除去工序中将其外侧的粘接剂大致完全除去的情况下）中，粘接剂层12在25～35分钟内溶解。
另外，在半导体晶片14周缘部的除去工序中，能够使用在半导体晶片的加工中一般所使用的切割刀片等刀片，所以没有使半导体晶片14与支撑基板10破损的危险。
进而，这样没有支撑基板10的破损的危险，所以除了图4所示的情况，能够充分地再利用。
另外，在除去工序中通过刀片30将半导体晶片14的周缘部除去，能够得到与实施边缘修整加工同样的效果，所以能够省去其他工序中的对半导体晶片的边缘修整加工。即，不使用预先边缘修整加工的半导体晶片，也能够抑制分离后的晶片破损、晶片缺陷。
另外，在本实施方式中，作为半导体晶片14周缘部的除去单元使用刀片30，但只要能够不使半导体晶片14损伤地将其周缘部物理性除去即可，不特别限定于刀片。
（第2实施方式）
图5是顺序表示第2实施方式的基板分离方法的工序的概略剖视图。
本实施方式的基板分离方法如图5（a）所示，与第1实施方式同样，是将在支撑基板10的表面经由粘接剂12贴合有半导体晶片14的贴合基板20分离的方法。
另外，在本实施方式中，在除去工序中，与第1实施方式同样，一边使上述贴合基板20旋转，一边使用切割刀片等刀片30，将半导体晶片14的周缘部，以至少其正下的粘接剂层12表面露出、并且在支撑基板10的周缘部与半导体晶片14之间残存有粘接剂层12而保持支撑基板10与半导体晶片14之间的粘接的方式除去。
然而，在第1实施方式中，将半导体晶片14周缘部且俯视上比剥离层16靠外侧的部分除去，与此相对，在本实施方式中，在剥离层16的内侧，从剥离层16的外边缘，从例如内侧0.5mm的部位将外侧部分与其正下的粘接剂一起除去。而且，为了确保支撑基板10与半导体晶片14之间的粘接，粘接剂残余粘接剂层12的厚度的一半左右而除去。
另外，只要能够确保支撑基板10与半导体晶片14之间的粘接，残余的粘接剂层12的厚度可以更薄，相反也可以加厚。即，例如，如图6所示，也可以不除去粘接剂而仅除去半导体晶片14的周缘部。然而，为了确保支撑基板10与半导体晶片14之间的粘接，与第1实施方式不同，需要在支撑基板10上残余粘接剂。因此，虽与粘接剂的种类有关，但粘接剂层12一般优选厚度为20μm以上。
这样的除去工序后的工序即图5（c）以后的工序与第1实施方式的图1（c）以后的工序同样，将说明省略。
在第2实施方式中也，通过刀片30物理性地，以至少半导体晶片14周缘部正下的粘接剂层12表面露出并且在支撑基板10的周缘部与半导体晶片14之间残存有粘接剂层12而保持支撑基板10与半导体晶片14之间的粘接的方式，将半导体晶片14周缘部除去，然后使存在于支撑基板10与半导体晶片14之间的粘接剂层溶解，所以能够同时不使它们破损地将支撑基板10以及半导体晶片14短时间分离。
特别，在本实施方式中，将半导体晶片14周缘部除去直至剥离层16的内侧，所以能够比第1实施方式更加缩短粘接剂的溶解时间，能够更短时间将支撑基板10以及半导体晶片14分离。根据本发明者实际进行的实验，在粘接剂层12的厚度为30μm、从其外边缘到剥离层16的外边缘的距离为3.0mm的情况下，从溶剂供给开始仅10～15分钟的时间内粘接剂层12就变为能够分离的溶解状态。在粘接剂中，使用与在上述的第1实施方式的实验中使用的同样的粘接剂，通过同样的方法供给。
另外，在本实施方式中，分离后的支撑基板10也能够再次作为半导体晶片的支撑基板而使用。
进而，在除去工序中通过刀片30将半导体晶片的周缘部除去，能够得到与实施边缘修整加工同样的效果，所以能够省去其他工序中的对半导体晶片的边缘修整加工。
根据上面说明的至少一个实施方式，通过刀片物理性地，以至少半导体晶片周缘部正下的粘接剂层表面露出并且在支撑基板的周缘部与半导体晶片之间残存有粘接剂层而保持支撑基板与半导体晶片之间的粘接的方式，将支撑基板的剥离层的外侧区域、剥离层非形成区域上的半导体晶片周缘部除去，然后使存在于支撑基板与半导体晶片之间的粘接剂层溶解，所以能够同时不使它们破损地将支撑基板以及半导体晶片短时间分离。另外，在除去工序中，将半导体晶片的周缘部除去，能够得到与实施边缘修整加工同样的效果，所以能够省去其他工序中的对半导体晶片的边缘修整加工。
对本发明的几个实施方式进行了说明，但这些实施方式是作为例子而提出的，意图并非限定发明的范围。这些新的实施方式能够以其他的各种形态实施，在不脱离发明的宗旨的范围内，能够进行各种省略、置换、变更。这些实施方式及其变形包含于发明的范围及宗旨，并且包含于权利要求所记载的发明和与其相等的范围。

Claims (6)

1.一种基板分离方法，该基板分离方法将在表面的除了周缘部的区域形成有剥离层的第1基板与经由粘接剂层贴合于所述第1基板的表面的至少包含所述剥离层的区域的第2基板分离，其特征在于，包括：
除去工序，该工序以至少所述第2基板周缘部正下的所述粘接剂层表面露出并且在所述第1基板的周缘部与所述第2基板之间残存有所述粘接剂层而保持所述第1以及第2基板之间的粘接的方式，将所述第2基板周缘部物理性除去；和
溶解工序，该工序在所述除去工序后，将所述粘接剂层溶解。
2.如权利要求1所述的基板分离方法，其特征在于：
以除去后的所述第2基板的外边缘俯视时位于比所述剥离层的外边缘靠外侧的位置的方式，在所述除去工序中将所述第2基板周缘部除去。
3.如权利要求2所述的基板分离方法，其特征在于：
在所述除去工序中，将所述第2基板周缘部上的粘接剂除去直至所述第1基板附近。
4.如权利要求1所述的基板分离方法，其特征在于：
以除去后的所述第2基板的外边缘俯视时位于比所述剥离层的外边缘靠内侧的位置的方式，在所述除去工序中将所述第2基板周缘部除去。
5.如权利要求1至4的任意一项所述的基板分离方法，其特征在于：
所述粘接剂层的厚度为5～100μm。
6.一种基板分离装置，该基板分离装置将在表面的除了周缘部的区域形成有剥离层的第1基板与经由粘接剂层贴合于所述第1基板的表面的至少包含所述剥离层的区域的第2基板分离，其特征在于，包括：
除去单元，其以至少所述第2基板周缘部正下的所述粘接剂层表面露出并且在所述第1基板的周缘部与所述第2基板之间残存有所述粘接剂层而保持所述第1以及第2基板之间的粘接的方式，将所述第2基板周缘部物理性除去；和
供给单元，其向通过所述除去单元将周缘部除去的第2基板的周围供给将所述粘接剂层溶解的溶解液。
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