JP2013201251A - 基板の分離方法及び分離装置 - Google Patents
基板の分離方法及び分離装置 Download PDFInfo
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- B32B38/18—Handling of layers or the laminate
- B32B38/1825—Handling of layers or the laminate characterised by the control or constructional features of devices for tensioning, stretching or registration
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- B32B38/1841—Positioning, e.g. registration or centering during laying up
- B32B38/185—Positioning, e.g. registration or centering during laying up combined with the cutting of one or more layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
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- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1189—Gripping and pulling work apart during delaminating with shearing during delaminating
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1994—Means for delaminating from release surface
Abstract
【解決手段】実施形態の基板分離方法は、表面の周縁部を除く領域に剥離層16が形成された第1の基板10と、第1の基板10の表面の少なくとも剥離層16を含む領域に接着剤層12を介して貼り合わせた第2の基板14とを分離する方法である。この方法は、第2の基板14周縁部を、少なくともその直下の接着剤層12表面が露出し、かつ第1の基板10の周縁部と第2の基板14の間に接着剤層12が残存して、第1及び第2の基板10,14間の接着が保持されるように、物理的に除去する除去工程と、その後、接着剤層12を溶解する溶解工程とを具備する。
【選択図】図1
Description
図1は、第1の実施形態の基板分離方法の工程を順に示す概略断面図である。なお、図1及びこれ以降に示す図面はいずれも、分離する2枚の基板(半導体ウエハ及び支持基板)の周縁部及びその近傍のみを示している。
また、除去工程において半導体ウエハ14の周縁部をブレード30により除去しており、エッジトリミング加工を施したのと同様の効果が得られるため、別工程での半導体ウエハに対するエッジトリミング加工を省くことができる。すなわち、予めエッジトリミング加工した半導体ウエハを用いずとも、分離後のウエハ割れ、ウエハ欠けを抑制することができる。
図2は、第2の実施形態の基板分離方法の工程を順に示す概略断面図である。
さらに、除去工程において半導体ウエハの周縁部をブレード30により除去しており、エッジトリミング加工を施したのと同様の効果が得られるため、別工程での半導体ウエハに対するエッジトリミング加工を省くことができる。
Claims (6)
- 表面の周縁部を除く領域に剥離層が形成された第1の基板と、前記第1の基板の表面の少なくとも前記剥離層を含む領域に接着剤層を介して貼り合わせた第2の基板とを分離する基板分離方法であって、
前記第2の基板周縁部を、少なくともその直下の前記接着剤層表面が露出し、かつ前記第1の基板の周縁部と前記第2の基板の間に前記接着剤層が残存して、前記第1及び第2の基板間の接着が保持されるように、物理的に除去する除去工程と、
前記除去工程後、前記接着剤層を溶解する溶解工程と
を具備することを特徴とする基板分離方法。 - 除去後の前記第2の基板の外縁が、平面視で前記剥離層の外縁より外側に位置するように、前記除去工程において前記第2の基板周縁部を除去することを特徴とする請求項1記載の基板分離方法。
- 前記除去工程において、前記第2の基板周縁部上の接着剤を前記第2の基板近傍まで除去することを特徴とする請求項2記載の基板分離方法。
- 除去後の前記第2の基板の外縁が、平面視で前記剥離層の外縁より内側に位置するように、前記除去工程において前記第2の基板周縁部を除去することを特徴とする請求項1記載の基板分離方法。
- 前記接着剤層の厚みが、5〜100μmであることを特徴とする請求項1乃至4のいずれか1項記載の基板分離方法。
- 表面の周縁部を除く領域に剥離層が形成された第1の基板と、前記第1の基板の表面の少なくとも前記剥離層を含む領域に接着剤層を介して貼り合わせた第2の基板とを分離する基板分離装置であって、
前記第2の基板周縁部を物理的に除去する除去手段と、
前記除去手段によって周縁部が除去された第2の基板の周囲に前記接着剤層を溶解する溶解液を供給する供給手段と
を具備することを特徴とする基板分離装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2012068287A JP5591859B2 (ja) | 2012-03-23 | 2012-03-23 | 基板の分離方法及び分離装置 |
TW102106790A TWI529799B (zh) | 2012-03-23 | 2013-02-26 | 基板之分離方法及分離裝置 |
CN201310063932.6A CN103325733B (zh) | 2012-03-23 | 2013-02-28 | 基板的分离方法以及分离装置 |
US13/790,266 US8771456B2 (en) | 2012-03-23 | 2013-03-08 | Method of manufacturing a semiconductor device and substrate separating apparatus |
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JP2012068287A JP5591859B2 (ja) | 2012-03-23 | 2012-03-23 | 基板の分離方法及び分離装置 |
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JP5591859B2 JP5591859B2 (ja) | 2014-09-17 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016062959A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 基板分離方法および半導体製造装置 |
US9490170B2 (en) | 2014-09-17 | 2016-11-08 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
JP2020107683A (ja) * | 2018-12-26 | 2020-07-09 | 東京エレクトロン株式会社 | 基板処理システム、および基板処理方法 |
JP2021044447A (ja) * | 2019-09-12 | 2021-03-18 | 株式会社東芝 | キャリア及び半導体装置の製造方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013008915A (ja) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | 基板加工方法及び基板加工装置 |
WO2014003056A1 (ja) * | 2012-06-29 | 2014-01-03 | 日立化成株式会社 | 半導体装置の製造方法 |
KR101775198B1 (ko) * | 2013-04-09 | 2017-09-06 | 주식회사 엘지화학 | 적층체 및 이를 이용하여 제조된 기판을 포함하는 소자 |
FR3015110B1 (fr) * | 2013-12-17 | 2017-03-24 | Commissariat Energie Atomique | Procede de fabrication d’un substrat-poignee destine au collage temporaire d’un substrat |
CN105206506B (zh) * | 2014-06-30 | 2018-06-29 | 中芯国际集成电路制造(上海)有限公司 | 晶圆的处理方法 |
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US20130248099A1 (en) | 2013-09-26 |
CN103325733B (zh) | 2016-09-28 |
US8771456B2 (en) | 2014-07-08 |
TW201347034A (zh) | 2013-11-16 |
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