WO2016090636A1 - 一种晶圆临时键合及分离的方法 - Google Patents

一种晶圆临时键合及分离的方法 Download PDF

Info

Publication number
WO2016090636A1
WO2016090636A1 PCT/CN2014/093716 CN2014093716W WO2016090636A1 WO 2016090636 A1 WO2016090636 A1 WO 2016090636A1 CN 2014093716 W CN2014093716 W CN 2014093716W WO 2016090636 A1 WO2016090636 A1 WO 2016090636A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
bonding
functional
separator
carrier
Prior art date
Application number
PCT/CN2014/093716
Other languages
English (en)
French (fr)
Inventor
唐昊
张周杰
Original Assignee
浙江中纳晶微电子科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 浙江中纳晶微电子科技有限公司 filed Critical 浙江中纳晶微电子科技有限公司
Priority to PCT/CN2014/093716 priority Critical patent/WO2016090636A1/zh
Publication of WO2016090636A1 publication Critical patent/WO2016090636A1/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the invention relates to the field of microelectronics technology, in particular to a method for temporary bonding and separation of wafers.
  • the ultra-thin functional wafer needs to be temporarily bonded to a carrier wafer. After bonding, the functional wafer and the carrier wafer are bonded together. It can be fabricated by thinning functional wafers, manufacturing TSVs, manufacturing rewiring layers, and forming internal interconnects. Then, the functional wafer is separated from the carrier wafer, and the thinned functional wafer is cleaned and cut to complete the processing process of the ultra-thin functional wafer.
  • the wafer bonding method currently used in the industry generally involves applying a bonding adhesive between two wafers, and then bonding the two wafers together by a bonding machine.
  • the first method uses a solvent to dissolve the bonding glue from the edges of the bonded two wafers
  • the second is to use thermal shearing. Separation, the first method, the dissolving agent slowly dissolves the bonding glue from the edge of the wafer, the time for the dissolving agent to reach the center of the wafer is too long, the separation efficiency is too low, and the carrier wafer and the functional wafer are directly separated.
  • There is a special carrier plate to fix the functional wafer to prevent the functional wafer and the carrier wafer from being mixed during the separation which is troublesome and costly.
  • special equipment is required for thermal shearing, the cost is high, and the wafer is easily damaged when shearing, and the success rate is low.
  • the technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a cost comparison.
  • a method of temporary bonding and separation of wafers that is low, simple in process, and has a very high success rate and efficiency.
  • the present invention provides a method for temporary bonding and separation of wafers, the bonding method comprising the following steps:
  • the separation method comprises the following steps:
  • the step S3 further includes the following: first attaching a dicing film on the back side of the functional wafer, and then separating the carrier wafer and the isolation film together with the bonding glue and the functional wafer.
  • the back side of the functional wafer refers to the side of the functional wafer that is not coated with the bonding glue, that is, the opposite side of the bonding surface of the functional wafer. In this way, the functional wafer is also supported by the dicing film after separation and is protected in the remaining process flow.
  • the separator is formed by applying the method of the following method to the front side of the carrier wafer by spin coating or printing, and then forming a separator on the front surface of the carrier wafer by baking. .
  • the separator is formed by applying the method of the following method to the front side of the carrier wafer by spin coating or printing, and then forming a separator on the front surface of the carrier wafer by baking. .
  • it is relatively simple to form the isolation film on the front side of the carrier wafer, and the thickness of the isolation film formed is uniform.
  • step S3 the carrier wafer is separated from the isolation film by using a pointed tool to draw a gap at the junction of the isolation film and the carrier wafer, and then directly applying force to the carrier wafer from the isolation film. Separated on. In this way, the carrier wafer is separated from the separator and can be carried out at room temperature. The entire operation can be completed in an instant, and the operation is simple and efficient.
  • the carrier wafer is separated from the isolation film by using a solvent to dissolve the isolation film at the junction of the isolation film and the carrier wafer, and then directly applying force to the carrier wafer from the isolation film. Separated on.
  • the solvent is directly used to dissolve the separator into a gap, eliminating the possibility of accidentally injuring the functional wafer or the carrier wafer, and also eliminating the need for a tool to create a gap, which is simpler, more convenient, and safer.
  • the present invention has the following advantages: the present invention forms a layer of isolation film on the front surface of the carrier wafer by polymer treatment on the front surface of the carrier wafer, and the isolation film is attached to the front surface of the carrier wafer.
  • the isolation film does not react with the bonding adhesive, does not affect the bonding, and after bonding, the functional wafer After the processing is completed, the functional wafer needs to be separated from the carrier wafer.
  • the carrier wafer is directly separated from the isolation film, and the remaining functional wafers are provided with bonding glue and a separator, and then When the separator is peeled off from the functional wafer, the functional wafer and the bonding adhesive are left. At this time, the side of the bonding adhesive that is adhered to the separator is completely exposed, and then the cleaning adhesive is used to clean the peeling bonding adhesive. Since the bonding glue is completely exposed to the cleaning liquid, the bonding glue can be directly removed, and the efficiency is very high. Moreover, since only the functional wafer remains, there is no need for a special carrier to fix the functional wafer, and the cost is low, the operation is convenient, and the efficiency is very high. Throughout the process, the functional wafer is always protected by bonding glue and will not be easily damaged.
  • the isolation film is peeled off from the functional wafer, and the isolation film is detached from the functional wafer by direct force application. This method is simple and convenient.
  • FIG. 1 is a schematic structural view of a front surface of a carrier wafer having a separator
  • FIG. 2 is a schematic structural view of a carrier wafer bonded to a functional wafer
  • FIG. 3 is a schematic structural view of the carrier wafer separated from the separator
  • FIG. 4 is a schematic view showing the structure of separating the separator from the functional wafer.
  • carrier wafer As shown in the figure: 1, carrier wafer, 2, isolation film, 3, bonding glue 4, functional wafer, 5, gap.
  • the present invention provides a method for temporarily bonding and separating a wafer, and the bonding method includes the following steps:
  • a spacer film 2 is formed on the front side of the carrier wafer 1; the front side of the carrier wafer is the side bonded to the functional wafer.
  • the separator is applied to the front side of the carrier wafer by spin coating or printing, and then a film is formed on the front surface of the carrier wafer by baking.
  • the separator is made of Z-COAT 150 of Zhejiang Zhongnajing Microelectronics Technology Co., Ltd. or DaeCoat200 of Daetec Company of the United States. These products are in liquid state when supplied, by spin coating or printing.
  • the method is applied on the front side of the carrier wafer, and then solidified by gradient heating to form a film. It has high temperature stability and excellent chemical corrosion resistance, and the bonding strength with glass and silicon wafer is moderate.
  • the film In the case of not intentionally tearing, the film is not Will be on the carrier wafer Disengaged, but when the force is torn, the film can be peeled off from the carrier wafer.
  • the separator After the separator is formed on the carrier wafer, the separator is transparent, and because it has excellent chemical resistance, it does not bond with the bond. The gel reacts.
  • the separator can also be made of other materials having good chemical resistance and moderate bonding strength.
  • the separation method comprises the following steps:
  • the step S3 separates the carrier wafer 1 from the separator 2, and uses a pointed tool to draw a slit 5 at the junction of the separator 2 and the carrier wafer 1, and then directly applies force to isolate the carrier wafer 1 from the separator. Separated on membrane 2. Separating the carrier wafer from the separator in this manner is simpler and more convenient.
  • a tool with a pointed tip is used to separate a gap between the isolation film and the carrier wafer, and then the carrier wafer can be separated from the isolation film by force.
  • a vacuum chuck is used to adsorb the back surface of the carrier wafer. Apply force to peel the carrier wafer from the gap.
  • the functional wafer After peeling off, the functional wafer is provided with bonding glue and separator, and then the separator is peeled off from the functional wafer. At this time, the diaphragm is directly applied by means of force application. Stripped from the functional wafer. At this time, only the bonding glue is applied to the functional wafer, and then the bonding glue is cleaned by immersion. Since one side of the bonding glue is exposed, the bonding glue and the cleaning liquid can be fully contacted and cleaned. The efficiency is much higher than the prior art, and since there are only functional wafers and no carrier wafers, it is not necessary to use a carrier to fix the functional wafers when removing the bonding glue, which is low in cost and high in efficiency.
  • the carrier wafer 1 is separated from the separator 2, and a separator is used to dissolve the separator 2 at the junction of the separator 2 and the carrier wafer 1. Then, the carrier wafer 1 is directly applied from the separator. 2 separated. Solvent-dissolving the separator means that it is only necessary to dissolve the separator into a gap without dissolving the entire separator. Therefore, the efficiency is very high, as long as a gap is formed between the separator and the carrier wafer, then It is simple and convenient to apply force to separate the carrier wafer from the separator.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明提出一种晶圆临时键合及分离的方法,所述键合方法包括以下步骤:S1、在载体晶圆正面制作一层隔离膜;S2、将带有隔离膜的载体晶圆的正面与功能晶圆之间涂覆键合胶,将功能晶圆和载体晶圆键合在一起;所述分离方法包括以下步骤:S3、将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离;S4、从功能晶圆上的键合胶上剥离隔离膜;S5、清洗功能晶圆表面上的键合胶,完成晶圆的分离。采用这种方法成本较低、工艺简单而且成功率和效率都非常高。

Description

一种晶圆临时键合及分离的方法 技术领域
本发明涉及微电子技术领域,具体讲是一种晶圆临时键合及分离的方法。
背景技术
随着人们对电子产品的要求朝着小型化的方向发展,电子芯片也朝向越来越薄的方向发展,但是硅晶圆的厚度如果要减薄至100微米或以下时,非常容易发生碎片、或者是在对晶圆做处理时由于应力导致晶圆弯曲变形等,无法对这种超薄晶圆进行直接加工处理。因此,为了能加工处理这类超薄晶圆,需要将这种超薄的功能晶圆首先与一载体晶圆临时键合,键合之后,功能晶圆与载体晶圆粘节为一体,就可以对功能晶圆进行减薄、TSV的制造、再布线层的制造、形成内部互连等工艺制作。然后再将功能晶圆与载体晶圆进行分离,并对减薄后的功能晶圆进行清洗、切割等工艺,完成对这种超薄的功能晶圆的加工工艺。
目前行业内采用的晶圆键合方法一般是在在两块晶圆之间涂覆键合胶,然后再采用键合机将两块晶圆键合在一起。
针对上述临时键合的晶圆进行分离一般有以下几种方法:第一种,利用溶剂从键合的两块晶圆的边缘溶解键合时的键合胶,第二种就是采用热力剪切分离,第一种方法,溶解剂从晶圆边缘处慢慢溶解键合胶,溶解剂到达晶圆中心的时间太长,分离效率太低,而且直接将载体晶圆与功能晶圆分离还需要有特殊的载板来固定功能晶圆,防止在分离时,功能晶圆和载体晶圆混合,工序麻烦,成本较高。采用第二种方法,需要专门的设备进行热力剪切,成本较高,而且剪切时容易损坏晶圆,成功率较低。
因此目前急需一种工艺简单、操作方便,而且效率较高的晶圆临时键合及分离的方法。
发明内容
本发明所要解决的技术问题是,克服了现有技术的缺陷,提供了一种成本较 低、工艺简单而且成功率和效率都非常高的晶圆临时键合及分离的方法。
为解决上述技术问题,本发明提出一种晶圆临时键合及分离的方法,所述键合方法包括以下步骤:
S1、在载体晶圆正面制作一层隔离膜;
S2、将带有隔离膜的载体晶圆的正面与功能晶圆之间涂覆键合胶,将功能晶圆和载体晶圆键合在一起;
所述分离方法包括以下步骤:
S3、将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离;
S4、从功能晶圆上的键合胶上剥离隔离膜;
S5、清洗功能晶圆表面上的键合胶,完成晶圆的分离。
所述步骤S3还包括以下内容:先在功能晶圆的背面贴附切割膜,然后再将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离。所述功能晶圆的背面是指功能晶圆上没有涂覆键合胶的一面,即功能晶圆的键合面的对立面。采用这种方法,功能晶圆在分离之后还有切割膜支撑,在剩下的工艺流程中得到保护。
所述步骤S1中,制作隔离膜采用下述方法,将隔离膜制液采用旋涂或者印刷的方式涂到载体晶圆的正面,然后再通过烘烤使载体晶圆的正面形成一层隔离膜。采用这种方式在载体晶圆的正面制作隔离膜比较简单,而且形成的隔离膜的厚度均匀。
作为一种改进,所述步骤S3中将载体晶圆从隔离膜上分离采用带有尖头的工具在隔离膜和载体晶圆结合处划出缝隙,然后直接施力将载体晶圆从隔离膜上分离。采用这种方式将载体晶圆从隔离膜上分离,可以在室温下进行,整个操作过程可以瞬间完成,操作简单高效。
作为另一种改进,所述步骤S3中将载体晶圆从隔离膜上分离采用溶剂将隔离膜与载体晶圆结合处的隔离膜溶解出一个缝隙,然后直接施力将载体晶圆从隔离膜上分离。采用这种方法,直接采用溶剂将隔离膜溶解出一道缝隙,免除了误伤功能晶圆或者载体晶圆的可能性出现,而且也不需要刀具产生缝隙,更加简单方便而且安全。
采用上述方法后,本发明具有以下优点:本发明通过在载体晶圆的正面做聚合物处理,使载体晶圆的正面形成一层隔离膜,此隔离膜贴在载体晶圆的正面, 在与功能晶圆键合时,直接在隔离膜和功能晶圆之间涂键合胶进行键合,隔离膜不与键合胶发生反应,不影响键合,而在键合之后,对功能晶圆的加工完成之后,需要将功能晶圆与载体晶圆做分离,此时,直接将载体晶圆从隔离膜上分离,剩下的功能晶圆上就带有键合胶和隔离膜,然后再将隔离膜从功能晶圆上施力剥离,就剩下功能晶圆和键合胶,此时键合胶的与隔离膜贴合的一面完全暴露出来,再使用清洗液清洗剥离键合胶,由于键合胶完全暴露在清洗液下,因此,可以直接将键合胶去除,效率非常高。而且由于只剩下功能晶圆,因此不需要特殊的载板固定功能晶圆,成本较低,操作方便,效率非常高。整个过程中,功能晶圆始终有键合胶的保护,不会轻易损坏。
所述步骤S4中从功能晶圆上剥离隔离膜,采用直接施力将隔离膜从功能晶圆上脱离。采用这种方式简单方便。
附图说明
图1为载体晶圆的正面具有隔离膜的结构示意图;
图2为载体晶圆与功能晶圆键合后的结构示意图;
图3为将载体晶圆与隔离膜分离后的结构示意图;
图4为将隔离膜与功能晶圆分离后的结构示意图。
如图所示:1、载体晶圆,2、隔离膜,3、键合胶4、功能晶圆,5、缝隙。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细的说明:
如图1-4所示:本发明提出一种晶圆临时键合及分离的方法,所述键合方法包括以下步骤:
S1、在载体晶圆1的正面制作一层隔离膜2;载体晶圆的正面就是与功能晶圆键合的一面。
所述隔离膜采用旋涂或者印刷的方式涂到载体晶圆的正面,然后再通过烘烤使载体晶圆的正面形成一层隔离膜。本实施例中隔离膜采用浙江中纳晶微电子科技有限公司的型号为Z-COAT 150的产品或者美国Daetec公司的型号为DaeCoat200的产品,这些产品在提供时为液体状态,通过旋涂或印刷方式涂在载体晶圆的正面,然后梯度升温固化成膜,具有高温稳定和优良的抗化学腐蚀能力,而且与玻璃、硅片的粘接强度适中,在不故意去撕的情况下,薄膜不会从载体晶圆上 脱离,但是当施力撕扯时,可将薄膜从载体晶圆上剥离,在载体晶圆上形成隔离膜后,隔离膜为透明状,而且由于其具有优良的抗化学腐蚀能力,因此不与键合胶发生反应。当然隔离膜也可以采用其它的具有良好抗化学腐蚀能力而且粘接强度适中的材料。
S2、将带有隔离膜2的载体晶圆1的正面与功能晶圆4之间涂覆键合胶3,并进行键合,完成晶圆的键合;一般采用晶圆键合机将功能晶圆和载体晶圆进行键合,由于晶圆键合本身为本领域常见技术,因此在此并未赘述。
所述分离方法包括以下步骤:
S3、将载体晶圆1与隔离膜2连同键合胶3以及功能晶圆4一起分离;也就是说将载体晶圆1从隔离膜2上分离。
S4、从功能晶圆4上的键合胶3上剥离隔离膜2;
S5、清洗功能晶圆4表面上的键合胶3,完成晶圆的分离。
所述步骤S3中将载体晶圆1从隔离膜2上分离采用带有尖头的工具在隔离膜2和载体晶圆1结合处划出缝隙5,然后直接施力将载体晶圆1从隔离膜2上分离。采用这种方式将载体晶圆从隔离膜上分离,更加简单方便。采用带有尖头的工具将隔离膜和载体晶圆之间分出一定的缝隙,然后可以施力将载体晶圆从隔离膜上分离,本是实施例中采用真空吸盘吸附在载体晶圆背面,施力将载体晶圆从缝隙处剥离。这里可以采用手工,也可以采用机器,剥离之后,功能晶圆上带有键合胶以及隔离膜,然后再从功能晶圆上剥离隔离膜,此时也是采用施力的方式,直接将隔离膜从功能晶圆上剥离,此时功能晶圆上就只有键合胶,然后再通过浸泡的方式清洗键合胶,由于键合胶的一面暴露,因此键合胶与清洗液可以充分接触,清洗效率比现有技术要高很多,而且由于只有功能晶圆,而没有载体晶圆,因此去除键合胶时不需要采用载板来固定功能晶圆,成本较低,效率也较高。
所述步骤S3中将载体晶圆1从隔离膜2上分离采用溶剂将隔离膜2与载体晶圆1结合处的隔离膜2溶解出一个缝隙,然后直接施力将载体晶圆1从隔离膜2上分离。采用溶剂溶解隔离膜的方式,只需要将隔离膜溶解出一个缝隙即可,而不需要将整个隔离膜溶解,因此,效率非常高,只要将隔离膜和载体晶圆之间制造一个缝隙,那么就可以施力将载体晶圆从隔离膜上分离,简单方便。
经测试,如果是采用直接溶解键合胶的方式分离功能晶圆和载体晶圆的方 法,完全分离一般需要12个小时以上,而采用本申请所述方法,可瞬间去除载体晶圆,再撕去隔离膜,而利用清洗液去除键合胶及彻底清洗的时间,可控制在5分钟之内,生产效率提高幅度明显。

Claims (6)

  1. 一种晶圆临时键合及分离的方法,其特征在于:所述键合方法包括以下步骤:
    S1、在载体晶圆正面制作一层隔离膜;
    S2、将带有隔离膜的载体晶圆的正面与功能晶圆之间涂覆键合胶,将功能晶圆和载体晶圆键合在一起;
    所述分离方法包括以下步骤:
    S3、将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离;
    S4、从功能晶圆上的键合胶上剥离隔离膜;
    S5、清洗功能晶圆表面上的键合胶,完成晶圆的分离。
  2. 根据权利要求1所述的晶圆临时键合及分离的方法,其特征在于:所述步骤S3为,先在功能晶圆的背面贴附切割膜,然后再将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离。
  3. 根据权利要求1所述的晶圆临时键合及分离的方法,其特征在于:所述步骤S1中,制作隔离膜采用下述方法,将隔离膜制液采用旋涂或者印刷的方式涂到载体晶圆的正面,然后再通过烘烤使载体晶圆的正面形成一层隔离膜。
  4. 根据权利要求1所述的晶圆临时键合及分离的方法,其特征在于:所述步骤S3中将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离,采用带有尖头的工具在隔离膜和载体晶圆结合处划出缝隙,然后直接施力将载体晶圆从隔离膜上分离。
  5. 根据权利要求1所述的晶圆临时键合及分离的方法,其特征在于:所述步骤S3中将载体晶圆与隔离膜连同键合胶以及功能晶圆一起分离,采用溶剂将隔离膜与载体晶圆结合处的隔离膜溶解出一个缝隙,然后直接施力将载体晶圆从隔离膜上分离。
  6. 根据权利要求1所述的晶圆临时键合及分离的方法,其特征在于:所述步骤S4中从功能晶圆上剥离隔离膜,采用直接施力将隔离膜从功能晶圆上剥离。
PCT/CN2014/093716 2014-12-12 2014-12-12 一种晶圆临时键合及分离的方法 WO2016090636A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/093716 WO2016090636A1 (zh) 2014-12-12 2014-12-12 一种晶圆临时键合及分离的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/093716 WO2016090636A1 (zh) 2014-12-12 2014-12-12 一种晶圆临时键合及分离的方法

Publications (1)

Publication Number Publication Date
WO2016090636A1 true WO2016090636A1 (zh) 2016-06-16

Family

ID=56106504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/093716 WO2016090636A1 (zh) 2014-12-12 2014-12-12 一种晶圆临时键合及分离的方法

Country Status (1)

Country Link
WO (1) WO2016090636A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111446161A (zh) * 2020-03-11 2020-07-24 绍兴同芯成集成电路有限公司 一种晶圆的切割方法
CN112201574A (zh) * 2020-09-29 2021-01-08 武汉新芯集成电路制造有限公司 多层晶圆键合方法
CN113078092A (zh) * 2021-03-23 2021-07-06 浙江集迈科微电子有限公司 一种超薄芯片的拿取方法
CN113716519A (zh) * 2021-07-30 2021-11-30 苏州光舵微纳科技股份有限公司 一种硅片的临时键合方法
CN114628241A (zh) * 2020-12-10 2022-06-14 武汉新芯集成电路制造有限公司 芯片键合方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221738B1 (en) * 1997-03-26 2001-04-24 Canon Kabushiki Kaisha Substrate and production method thereof
US20060099733A1 (en) * 2004-11-09 2006-05-11 Geefay Frank S Semiconductor package and fabrication method
CN104064509A (zh) * 2014-07-09 2014-09-24 浙江中纳晶微电子科技有限公司 晶圆暂时键合及分离的方法
CN104078407A (zh) * 2013-03-29 2014-10-01 济南晶正电子科技有限公司 薄膜和制造薄膜的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221738B1 (en) * 1997-03-26 2001-04-24 Canon Kabushiki Kaisha Substrate and production method thereof
US20060099733A1 (en) * 2004-11-09 2006-05-11 Geefay Frank S Semiconductor package and fabrication method
CN104078407A (zh) * 2013-03-29 2014-10-01 济南晶正电子科技有限公司 薄膜和制造薄膜的方法
CN104064509A (zh) * 2014-07-09 2014-09-24 浙江中纳晶微电子科技有限公司 晶圆暂时键合及分离的方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111446161A (zh) * 2020-03-11 2020-07-24 绍兴同芯成集成电路有限公司 一种晶圆的切割方法
CN111446161B (zh) * 2020-03-11 2023-03-21 绍兴同芯成集成电路有限公司 一种晶圆的切割方法
CN112201574A (zh) * 2020-09-29 2021-01-08 武汉新芯集成电路制造有限公司 多层晶圆键合方法
CN112201574B (zh) * 2020-09-29 2023-11-24 武汉新芯集成电路制造有限公司 多层晶圆键合方法
CN114628241A (zh) * 2020-12-10 2022-06-14 武汉新芯集成电路制造有限公司 芯片键合方法
CN113078092A (zh) * 2021-03-23 2021-07-06 浙江集迈科微电子有限公司 一种超薄芯片的拿取方法
CN113716519A (zh) * 2021-07-30 2021-11-30 苏州光舵微纳科技股份有限公司 一种硅片的临时键合方法
CN113716519B (zh) * 2021-07-30 2023-12-19 苏州光舵微纳科技股份有限公司 一种硅片的临时键合方法

Similar Documents

Publication Publication Date Title
CN104485294A (zh) 一种晶圆临时键合及分离方法
US8871609B2 (en) Thin wafer handling structure and method
WO2016090636A1 (zh) 一种晶圆临时键合及分离的方法
JP2020518133A5 (zh)
JP5027460B2 (ja) ウエハの接着方法、薄板化方法、及び剥離方法
US10186447B2 (en) Method for bonding thin semiconductor chips to a substrate
WO2016179892A1 (zh) 一种晶圆分离的方法
KR102403580B1 (ko) 쉬운 조립을 위한 초소형 또는 초박형 개별 컴포넌트의 구성
JP2013201251A (ja) 基板の分離方法及び分離装置
CN104064509A (zh) 晶圆暂时键合及分离的方法
Phommahaxay et al. Ultrathin wafer handling in 3D Stacked IC manufacturing combining a novel ZoneBOND™ temporary bonding process with room temperature peel debonding
DE112019000220T5 (de) Verfahren zum Halten eines ultradünnen Halbleiterwafers für einen Halbleiterintegrationsprozess
US10083850B2 (en) Method of forming a flexible semiconductor layer and devices on a flexible carrier
KR101503326B1 (ko) 디바이스 웨이퍼와 캐리어 웨이퍼의 디본딩 방법 및 장치
Montméat et al. Study of a silicon/glass bonded structure with a UV-curable adhesive for temporary bonding applications
Jourdain et al. Integration and manufacturing aspects of moving from WaferBOND HT-10.10 to ZoneBOND material in temporary wafer bonding and debonding for 3D applications
CN108231646A (zh) 一种半导体器件的制造方法
JP4246758B2 (ja) Fpdの製造方法
JPH08148452A (ja) 基板表面保護テープ及び基板裏面研削方法
JP2018142630A (ja) ウェーハ仮止め用ワックス及びウェーハの仮止め方法
TW201413834A (zh) 薄層體之接合技術
US20070184630A1 (en) Method of bonding a semiconductor wafer to a support substrate
US10163673B2 (en) Dual adhesive bonding with perforated wafer
CN105280541A (zh) 一种用于超薄半导体圆片的临时键合方法及去键合方法
TW201530610A (zh) 暫時性接合晶圓系統及其製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14907838

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14907838

Country of ref document: EP

Kind code of ref document: A1