TW201305747A - 從基板除去光阻劑之方法 - Google Patents
從基板除去光阻劑之方法 Download PDFInfo
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- TW201305747A TW201305747A TW101133536A TW101133536A TW201305747A TW 201305747 A TW201305747 A TW 201305747A TW 101133536 A TW101133536 A TW 101133536A TW 101133536 A TW101133536 A TW 101133536A TW 201305747 A TW201305747 A TW 201305747A
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- Prior art keywords
- stripper solution
- solution
- photoresist
- substrate
- stripper
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 25
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 21
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 150000001412 amines Chemical group 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 5
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- 238000013019 agitation Methods 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical group OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000243 solution Substances 0.000 description 101
- 239000000203 mixture Substances 0.000 description 27
- 235000011114 ammonium hydroxide Nutrition 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 16
- 239000002808 molecular sieve Substances 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- -1 glycol ethers Chemical class 0.000 description 11
- 239000002274 desiccant Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- 239000013522 chelant Substances 0.000 description 4
- 230000008014 freezing Effects 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000013047 polymeric layer Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- CSDQQAQKBAQLLE-UHFFFAOYSA-N 4-(4-chlorophenyl)-4,5,6,7-tetrahydrothieno[3,2-c]pyridine Chemical compound C1=CC(Cl)=CC=C1C1C(C=CS2)=C2CCN1 CSDQQAQKBAQLLE-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010908 decantation Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 description 2
- BQJCRHHNABKAKU-KBQPJGBKSA-N morphine Chemical compound O([C@H]1[C@H](C=C[C@H]23)O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4O BQJCRHHNABKAKU-KBQPJGBKSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MYXKPFMQWULLOH-UHFFFAOYSA-M tetramethylazanium;hydroxide;pentahydrate Chemical compound O.O.O.O.O.[OH-].C[N+](C)(C)C MYXKPFMQWULLOH-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- JJZONEUCDUQVGR-WXUKJITCSA-N (NE)-N-[(2E)-2-hydroxyimino-1,2-diphenylethylidene]hydroxylamine Chemical compound c1ccccc1\C(=N/O)\C(=N\O)\c1ccccc1 JJZONEUCDUQVGR-WXUKJITCSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- JRLAKNMVEGRRGK-UHFFFAOYSA-N 1-(ethylamino)butan-2-ol Chemical compound CCNCC(O)CC JRLAKNMVEGRRGK-UHFFFAOYSA-N 0.000 description 1
- LXQMHOKEXZETKB-UHFFFAOYSA-N 1-amino-2-methylpropan-2-ol Chemical compound CC(C)(O)CN LXQMHOKEXZETKB-UHFFFAOYSA-N 0.000 description 1
- KODLUXHSIZOKTG-UHFFFAOYSA-N 1-aminobutan-2-ol Chemical compound CCC(O)CN KODLUXHSIZOKTG-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- ZBURELSAUHPHKC-UHFFFAOYSA-N 1-hydroxyethylphosphonic acid Chemical compound CC(O)P(O)(O)=O ZBURELSAUHPHKC-UHFFFAOYSA-N 0.000 description 1
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- JOERQAIRIDZWHX-UHFFFAOYSA-N 1-propoxy-2-(2-propoxypropoxy)propane Chemical compound CCCOCC(C)OCC(C)OCCC JOERQAIRIDZWHX-UHFFFAOYSA-N 0.000 description 1
- MYIPEPGIRJMNHF-UHFFFAOYSA-N 2,3,4-trimethyl-3-(2,3,4-trimethylpentan-3-yloxy)pentane Chemical compound CC(C)C(C)(C(C)C)OC(C)(C(C)C)C(C)C MYIPEPGIRJMNHF-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 description 1
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 description 1
- HUFRRBHGGJPNGG-UHFFFAOYSA-N 2-(2-propan-2-yloxypropoxy)propan-1-ol Chemical compound CC(C)OC(C)COC(C)CO HUFRRBHGGJPNGG-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- BMTAVLCPOPFWKR-UHFFFAOYSA-N 2-(ethylamino)butan-1-ol Chemical compound CCNC(CC)CO BMTAVLCPOPFWKR-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- SGBGCXQCQVUHNE-UHFFFAOYSA-N 2-(ethylamino)propan-1-ol Chemical compound CCNC(C)CO SGBGCXQCQVUHNE-UHFFFAOYSA-N 0.000 description 1
- HSHIHFMFJLIQDN-UHFFFAOYSA-N 2-(methylamino)butan-1-ol Chemical compound CCC(CO)NC HSHIHFMFJLIQDN-UHFFFAOYSA-N 0.000 description 1
- PXWASTUQOKUFKY-UHFFFAOYSA-N 2-(methylamino)propan-1-ol Chemical compound CNC(C)CO PXWASTUQOKUFKY-UHFFFAOYSA-N 0.000 description 1
- BCLSJHWBDUYDTR-UHFFFAOYSA-N 2-(propylamino)ethanol Chemical compound CCCNCCO BCLSJHWBDUYDTR-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 description 1
- VPSSPAXIFBTOHY-UHFFFAOYSA-N 2-amino-4-methylpentan-1-ol Chemical compound CC(C)CC(N)CO VPSSPAXIFBTOHY-UHFFFAOYSA-N 0.000 description 1
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 description 1
- DPEOTCPCYHSVTC-UHFFFAOYSA-N 2-aminohexan-1-ol Chemical compound CCCCC(N)CO DPEOTCPCYHSVTC-UHFFFAOYSA-N 0.000 description 1
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 description 1
- KJJPLEZQSCZCKE-UHFFFAOYSA-N 2-aminopropane-1,3-diol Chemical compound OCC(N)CO KJJPLEZQSCZCKE-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- IPUDBCXGMBSQGH-UHFFFAOYSA-N 2-methoxybutan-1-ol Chemical compound CCC(CO)OC IPUDBCXGMBSQGH-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methyl-2-butanol Substances CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- FBXBSCUQZWUZDD-UHFFFAOYSA-N 3-(ethylamino)propan-1-ol Chemical compound CCNCCCO FBXBSCUQZWUZDD-UHFFFAOYSA-N 0.000 description 1
- HNNZBZKURNBXOO-UHFFFAOYSA-N 3-(methylamino)butan-1-ol Chemical compound CNC(C)CCO HNNZBZKURNBXOO-UHFFFAOYSA-N 0.000 description 1
- KRGXWTOLFOPIKV-UHFFFAOYSA-N 3-(methylamino)propan-1-ol Chemical compound CNCCCO KRGXWTOLFOPIKV-UHFFFAOYSA-N 0.000 description 1
- AGMZSYQMSHMXLT-UHFFFAOYSA-N 3-aminobutan-1-ol Chemical compound CC(N)CCO AGMZSYQMSHMXLT-UHFFFAOYSA-N 0.000 description 1
- LXHUAPWNXDAINJ-UHFFFAOYSA-N 3-aminoheptan-4-ol Chemical compound CCCC(O)C(N)CC LXHUAPWNXDAINJ-UHFFFAOYSA-N 0.000 description 1
- KQIGMPWTAHJUMN-UHFFFAOYSA-N 3-aminopropane-1,2-diol Chemical compound NCC(O)CO KQIGMPWTAHJUMN-UHFFFAOYSA-N 0.000 description 1
- BJEMXPVDXFSROA-UHFFFAOYSA-N 3-butylbenzene-1,2-diol Chemical group CCCCC1=CC=CC(O)=C1O BJEMXPVDXFSROA-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PVNNOLUAMRODAC-UHFFFAOYSA-N 4-(ethylamino)butan-1-ol Chemical compound CCNCCCCO PVNNOLUAMRODAC-UHFFFAOYSA-N 0.000 description 1
- DBKSSENEKWOVKL-UHFFFAOYSA-N 4-(methylamino)butan-1-ol Chemical compound CNCCCCO DBKSSENEKWOVKL-UHFFFAOYSA-N 0.000 description 1
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 description 1
- CTDFCRIOSLTKFQ-UHFFFAOYSA-N 5-aminooctan-4-ol Chemical compound CCCC(N)C(O)CCC CTDFCRIOSLTKFQ-UHFFFAOYSA-N 0.000 description 1
- VJGRDSFPHUTBBE-UHFFFAOYSA-N 5-aminopentan-2-ol Chemical compound CC(O)CCCN VJGRDSFPHUTBBE-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- XNSPQPOQXWCGKC-UHFFFAOYSA-N C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.[N] XNSPQPOQXWCGKC-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Natural products NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 244000269722 Thea sinensis Species 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- CACDWRVXMWGLKR-UHFFFAOYSA-N ac1l9mop Chemical compound O.O.O.O.O.O CACDWRVXMWGLKR-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- HFLGBNBLMBSXEM-UHFFFAOYSA-N ethyl catechol Natural products CCC1=CC=C(O)C(O)=C1 HFLGBNBLMBSXEM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 229960001867 guaiacol Drugs 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229940044600 maleic anhydride Drugs 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 description 1
- 229960005181 morphine Drugs 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 150000004686 pentahydrates Chemical class 0.000 description 1
- 150000002989 phenols Chemical group 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000000473 propyl gallate Substances 0.000 description 1
- 235000010388 propyl gallate Nutrition 0.000 description 1
- 229940075579 propyl gallate Drugs 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- YNHJECZULSZAQK-UHFFFAOYSA-N tetraphenylporphyrin Chemical compound C1=CC(C(=C2C=CC(N2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3N2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 YNHJECZULSZAQK-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C11D2111/22—
Abstract
本發明提供一種用來從基板上除去一、二或更多層光阻層的改良無水(dry)剝除劑溶液。該剝除劑溶液包含二甲亞碸、四級氫氧化銨及烷醇胺、可選擇的輔助溶劑及少於約3重量%的水,及/或乾度係數為至少約1。本發明額外提供一種該改良無水剝除溶液之製備及使用方法。
Description
此申請案為2005年10月28日所提出之美國申請案號11/260,912的部分接續申請案,該美國申請案以參考之方式併於本文。
本揭示廣泛關於一種具有可從基板有效除去光阻劑的能力之組成物及其使用方法。所揭示的組成物為用來除去光阻劑之剝除劑溶液,其具有可在低於正常室溫及在運輸與倉儲時常會遇到的溫度下保持為液體之能力,且其額外對已除去之光阻材料具有優良的負載力。已證明具有減少的水含量之剝除劑溶液在乾淨地除去光阻劑、提供低銅蝕刻速率及增加光阻劑在剝除劑溶液中的溶解度(如由較少的顆粒計數所證明者)上特別有效。
與本揭示相關的先前技術包括本田(Honda)等人之美國專利案號5,648,324、本田等人之美國專利案號5,798,323、沙荷巴里(Sahbari)等人的美國專利案號6,319,835、池本(Ikemoto)等人之美國專利案號6,372,410、沙荷巴里等人的美國專利案號6,531,436、巴依克(Baik)等人之美國專利案號6,579,668、池本等人的美國專利案號6,638,694、錢(Chien)等人之美國專利案號6,846,748、岡田(Okada)的美國專利案號6,872,663及拉特(Rutter)二世等人之美國專利案號6,878,500。
廣泛來說,本揭示的第一觀點提供一種可從基板上有效除去或剝除光阻劑之光阻剝除劑溶液,其具有對該光阻材料特別高的負載力,以及當遭遇到典型在運輸、倉儲及在使用於某些製造設備時遇到之低於正常室溫的溫度時保持為液體之能力。根據本揭示之組成物典型可在低如約-20℃至約+15℃之溫度下保持為液體。根據本揭示的組成物典型包含二甲亞碸(DMSO)、四級氫氧化銨及烷醇胺。一個較佳具體實例包含約20%至約90%的二甲亞碸、約1%至約7%之四級氫氧化銨及約1%至約75%具有至少二個碳原子、至少一個胺基取代基及至少一個羥基取代基的烷醇胺,該胺基及羥基取代基接附至二個不同的碳原子。較佳的四級基團有(C1-C8)烷基、芳烷基及其組合。特別佳的四級氫氧化銨為氫氧化四甲基銨。特別佳的1,2-烷醇胺包括下式之化合物:
其中R1可為H、C1-C4烷基或C1-C4烷胺基。對特別佳的式I烷醇胺來說,R1為H或CH2CH2NH2。根據本揭示之進一步具體實例包含附加或輔助溶劑。較佳的輔助溶劑包括二醇類、二醇醚類及其類似物。
本揭示之第二觀點提供一種使用上述新穎剝除劑溶液從基板除去光阻劑及相關聚合材料之方法。光阻劑可從一上面具有光阻劑的經選擇基板除去如下:讓基板與剝除溶液
接觸一段足以除去所欲光阻劑量之時間,從剝除溶液中移出基板,以溶劑從基板沖洗掉溶液及乾燥基板。
本揭示的第三觀點包括經由所揭示之新穎方法製造的電子元件。
本揭示之第四觀點包括一種較佳的剝除劑溶液,其包含二甲亞碸、四級氫氧化銨、烷醇胺、可選擇的輔助溶劑與減低的水量。該較佳溶液之乾度係數為至少約1,且更佳溶液的乾度係數為至少約1.8,其中該乾度係數(DC)可由下列方程式來定義:
本揭示之第五觀點包括用該新穎無水(dry)剝除劑溶液從基板除去光阻劑的方法。該方法包括選擇上面已沉積有光阻劑之基板,讓該包含光阻劑的基板與一包含二甲亞碸、四級氫氧化銨、烷醇胺、可選擇的輔助溶劑之剝除劑溶液接觸,其中該剝除劑溶液的乾度係數為至少約1,移出基板使其不與剝除劑溶液接觸且從該基板沖洗掉剝除劑溶液。
本揭示的第六觀點包括一種部分經由上述方法所製備之電子元件。
本揭示之第七觀點包括一種提供無水組成物的方法,該組成物包含二甲亞碸、四級氫氧化銨、烷醇胺、可選擇的輔助溶劑,其中該溶液之乾度係數為至少約1。
本揭示之第八觀點包括一種獲得具有減低的水含量之四
級氫氧化銨的方法,其係藉由形成四級氫氧化銨、不想要的水與犧牲性溶劑的溶液且讓該溶液接受減壓與稍微加熱來獲得。在該處理期間,移除部分的犧牲性溶劑及水。在該方法期間,應該避免過度加熱以防止氫氧化物分解。可按需要重覆加入及移除犧牲溶劑與水,直到水含量足夠減低為止。
本揭示的第九觀點包括一種維持剝除劑溶液低水含量的方法。該方法包括選擇無水剝除劑溶液,在該剝除劑溶液與分子篩間建立接觸,及維持與該篩接觸直到用到該剝除劑溶液。此方法在於製造後、在儲存及/或裝運期間及在溶液容器已經打開後維持剝除劑溶液呈無水形式上特別有用。
為了促進對所請求發明之了解,現在將參考所闡明的具體實例且將使用具體文字來描述之。然而需了解的是,不意欲因此限制所請求發明的範圍,諸如於此所闡明的改變及進一步修改及其原理之進一步應用係設想在內,如熟知與此揭示相關技藝之人士通常會設想到者。
根據本揭示之組成物包括二甲亞碸(DMSO)、四級氫氧化銨及烷醇胺。較佳的烷醇胺具有至少二個碳原子、至少一個胺基取代基及至少一個羥基取代基,該胺基及羥基取代基接附至二個不同碳原子。較佳的四級取代基包括(C1-C8)烷基、苄基及其組合。較佳組成物的凝固點為低於約-20℃至最高約+15℃,及負載力為約15立方公分/升至最高
約90立方公分/升。對無水剝除劑溶液來說,較佳的四級取代基包括C1-C4烷基、芳烷基或其組合。
比起其它剝除劑溶液,具有增加烷醇胺含量之調配物對碳鋼特別無腐蝕性且對典型的廢棄物處理系統及附屬設備較無害。特別佳的組成物包含具有下式之1,2-烷醇胺:
其中R1為氫、(C1-C4)烷基或(C1-C4)烷胺基。某些較佳調配物額外包含輔助溶劑。特別佳的調配物包含約2%至約75%之輔助溶劑。特別有用的輔助溶劑包括以下更詳細描述的二醇類及其烷基或芳基醚類。較佳調配物具有充分低於25℃的凝,以使在運輸及倉儲期間的固化減到最小。更佳調配物的凝固點為低於約15℃。因為較佳剝除劑溶液在低溫下保持為液體,故消除或減少在溶液可供使用前將在冷天氣期間所接收或於未加熱倉庫所貯存之固化剝除劑溶液鼓狀物之需求。使用鼓狀加熱器來熔化固化的剝除劑溶液是耗時的、需要額外處理且會造成不完全熔化及熔化的溶液組成物變性。
此外,根據本揭示之組成物顯示出高負載力,使得該組成物能除去較高程度的光阻劑而沒有固體沉澱。負載力係定義為在材料再沉積於晶圓上之前或在殘餘物殘留在晶圓上之前,每升剝除劑溶液可除去的光阻劑或雙層材料之立方公分數。例如,若在再沉積發生或殘餘物殘留在晶圓上
之前,20升的剝除劑溶液可除去300立方公分之光阻劑時,負載力為300立方公分/20升=15立方公分/升。
組成物典型包含約55%至約95%的溶劑,其全部或大部分為DMSO及約2%至約10%之四級氫氧化銨。較佳的四級取代基包括(C1-C8)烷基、苄基及其組合。當使用時,輔助溶劑典型上構成組成物之約2%至約35%。剝除調配物亦可包含可選擇的界面活性劑,其含量範圍典型為約0.01%至約3%。所需烷醇胺之合適含量範圍可為該組成物的約2%至約75%。因為剝除劑溶液的某些組分可以水溶液提供,故組成物可選擇性包含小量的水。於本文中所提供之全部%皆為重量百分比。
較佳的烷醇胺具有至少二個碳原子,且在不同碳原子上具有胺基及羥基取代基。合適的烷醇胺包括但不限於乙醇胺、N-甲基乙醇胺、N-乙基乙醇胺、N-丙基乙醇胺、N-丁基乙醇胺、二乙醇胺、三乙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、異丙醇胺、二異丙醇胺、三異丙醇胺、N-甲基異丙醇胺、N-乙基異丙醇胺、N-丙基異丙醇胺、2-胺基丙烷-1-醇、N-甲基-2-胺基丙烷-1-醇、N-乙基-2-胺基丙烷-1-醇、1-胺基丙烷-3-醇、N-甲基-1-胺基丙烷-3-醇、N-乙基-1-胺基丙烷-3-醇、1-胺基丁烷-2-醇、N-甲基-1-胺基丁烷-2-醇、N-乙基-1-胺基丁烷-2-醇、2-胺基丁烷-1-醇、N-甲基-2-胺基丁烷-1-醇、N-乙基-2-胺基丁烷-1-醇、3-胺基丁烷-1-醇、N-甲基-3-胺基丁烷-1-醇、N-乙基-3-胺基丁烷-1-醇、1-胺基丁烷-4-醇、N-甲基-1-胺基丁烷-4-醇、N-
乙基-1-胺基丁烷-4-醇、1-胺基-2-甲基丙烷-2-醇、2-胺基-2-甲基丙烷-1-醇、1-胺基戊烷-4-醇、2-胺基-4-甲基戊烷-1-醇、2-胺基己烷-1-醇、3-胺基庚烷-4-醇、1-胺基辛烷-2-醇、5-胺基辛烷-4-醇、1-胺基丙烷-2,3-二醇、2-胺基丙烷-1,3-二醇、三(氧基甲基)胺基甲烷、1,2-二烷基丙烷-3-醇、1,3-二烷基丙烷-2-醇及2-(2-胺基乙氧基)乙醇。
適當的二醇醚溶劑包括但不限於乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單丁基醚、乙二醇二甲基醚、乙二醇二乙基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丙基醚、二乙二醇單異丙基醚、二乙二醇單丁基醚、二乙二醇單異丁基醚、二乙二醇單苄基醚、二乙二醇二乙基醚、三乙二醇單甲基醚、三乙二醇二甲基醚、聚乙二醇單甲基醚、二乙二醇甲基乙基醚、三乙二醇、醋酸乙二醇單甲基醚酯、醋酸乙二醇單乙酯、丙二醇單甲基醚、丙二醇二甲基醚、丙二醇單丁基醚、二丙二醇單甲基醚、二丙二醇單丙基醚、二丙二醇單異丙基醚、二丙二醇單丁基醚、二丙二醇二甲基醚、二丙二醇二丙基醚、二丙二醇二異丙基醚、三丙二醇及三丙二醇單甲基醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基-2-丁醇、3-甲氧基-3-甲基-1-丁醇、二烷、三烷、1,1-二甲氧基乙烷、四氫呋喃、冠醚類及其類似物。
該組成物亦可選擇性包括一或多種腐蝕抑制劑。合適的腐蝕抑制劑包括但不限於:芳香族羥基化合物,諸如兒茶酚;烷基兒茶酚類,諸如甲基兒茶酚、乙基兒茶酚及三級
丁基兒茶酚、酚類及焦棓酚;芳香族三唑類,諸如苯并三唑;烷基苯并三唑類;羧酸類,諸如蟻酸、醋酸、丙酸、丁酸、異丁酸、草酸、丙二酸、琥珀酸、戊二酸、馬來酸、反丁烯二酸、苯甲酸、酞酸、1,2,3-苯三羧酸、乙醇酸、乳酸、蘋果酸、檸檬酸、醋酸酐、酞酸酐、馬來酸酐、琥珀酸酐、水楊酸、沒食子酸及沒食子酸酯類,諸如沒食子酸甲酯及沒食子酸丙酯;上述含羧基有機化合物之有機鹽類;鹼性物質,諸如乙醇胺、三甲胺、二乙胺;及吡啶類,諸如2-胺基吡啶及其類似物;及螯合物化合物,諸如以磷酸為基礎的螯合物化合物,包括1,2-丙二胺四亞甲基膦酸及羥基乙烷膦酸,以羧酸為基礎的螯合物化合物,諸如乙二胺四乙酸及其鈉與銨鹽、二羥基乙基甘胺酸及氮基三醋酸,以胺為基礎的螯合物化合物,諸如聯吡啶、四苯基卟啉及啡啉,及以肟為基礎的螯合物化合物,諸如二甲基乙二肟及二苯基乙二肟。可使用單一腐蝕抑制劑或可使用腐蝕抑制劑的組合。已證明該腐蝕抑制劑的有用含量範圍為約1 ppm至約10%。
較佳可選擇的界面活性劑包括氟界面活性劑。較佳的氟界面活性劑之一個實例為杜邦(duPont)FSO(含聚乙二醇(50%)、乙二醇(25%)、1,4-二烷(<0.1%)、水(25%)之氟化短鏈聚合物B單醚)。
與基板接觸的較佳溫度為至少50℃較佳,然而對多數應用來說,約50℃至約75℃的溫度更佳。對基板具敏感性或需要較長除去時間之特別應用來說,較低的接觸溫度是適
當的。例如,當再加工基板時,可為適當的是將剝除劑溶液維持在至少20℃的溫度下一段較長的時間,以除去光阻劑及避免損傷該基板。若需要較長的接觸時間來完全除去光阻劑時,在剝除劑溶液上放置乾燥的氮覆蓋層可減低從環境中吸收水及維持該無水剝除劑溶液之改善性能。
當浸泡基板時,攪動組成物額外促進光阻劑之去除。可使用機械攪拌、循環或利用吹入惰性氣體氣泡通過該組成物來達成攪動。在去除想要量的光阻劑後,將基板移出使其不與剝除劑溶液接觸,且以水或醇來沖洗之。DI水為較佳的水形式及異丙醇為較佳的醇。對具有會遭受氧化之組分的基板來說,在惰性環境下進行該沖洗較佳。根據本揭示之較佳剝除劑溶液對光阻材料具有比目前商業產物改善的負載力,且能夠以既定體積的剝除劑溶液處理較大量的基板。
在此揭示中所提供的剝除劑溶液可用來除去以單層存在的聚合光阻材料或某些類型之雙層光阻劑。例如,雙層光阻劑典型具有被第二聚合層所覆蓋的第一無機層,或可具有二層聚合層。使用下列所教導的方法,可從一具有單層聚合物的標準晶圓有效地除去該單層聚合光阻劑。亦可使用相同方法,從具有由第一無機層與第二或外部聚合物層組成之雙層的晶圓除去單一聚合物層。最後,可從具有由二層聚合層所組成的雙層之晶圓有效地除去二層聚合物層。此新穎無水剝除劑溶液可用來除去一、二或更多層光阻層。
較佳的無水剝除劑溶液包含二甲亞碸、四級氫氧化銨、烷醇胺、可選擇的輔助溶劑及少於約3重量%的水。較佳的輔助溶劑為二醇醚類。更佳的無水剝除劑溶液包含二甲亞碸、四級氫氧化銨、烷醇胺、二醇醚溶劑,且其乾度係數為至少約1.8。
無水光阻剝除劑溶液的用途類似於上述就具有低凝固點的剝除劑溶液所述者。但是,有益的是在使用前維持剝除劑溶液呈無水形式及藉由在涉及光阻劑去除的區域中維持乾燥環境而在其使用期間使水吸收減到最小。藉由在儲存、運輸期間及在打開容器後,於其使用之前保持剝除劑溶液與活性分子篩間之接觸,可讓剝除劑溶液維持在無水狀態。
描述於本文的無水剝除劑溶液應該從無水組分製備至可能的程度。因為四級氫氧化銨類具吸濕性且通常以水溶液或其水合物獲得,故通常必需除去包含在該溶液中或與該水合物結合的水,以提供乾度係數至少約1之無水剝除劑溶液。在高溫下乾燥四級氫氧化銨類且至乾燥狀態的努力通常會造成該氫氧化物分解。已驚人地發現,可將在揮發性溶劑中之四級氫氧化銨類預先乾燥,以提供具有減少的水含量但沒有分解之溶劑溼糊狀物。藉由預先乾燥四級氫氧化銨且將其與其它實質上無水的組分結合來維持低水含量,或藉由隨後乾燥從含水組分形成之最初形成的溼剝除劑溶液,可製備包含四級氫氧化銨的無水剝除劑溶液。
預先乾燥形式的四級氫氧化銨可藉由讓水合或其它潮溼
形式的四級氫氧化銨接受減壓與非常輕微的加熱來獲得。水去除可經由在讓氫氧化物接受減壓前將四級氫氧化銨溶解在諸如醇的溶劑中來促進。基於到目前為止所進行的工作,較佳的醇為甲醇。在此處理期間,除去實質部分的水及醇以提供該四級氫氧化銨之醇潮溼糊狀物。依想要之乾燥程度而定,可將額外的無水醇加至最初處理的氫氧化物,且將在減壓下處理重覆一或多次。可在約0.001至約30毫米汞柱的壓力及最高至少約35℃的溫度下進行該處理,而沒有四級氫氧化銨的實質分解。更佳的處理可在約0.01至約10毫米汞柱的壓力下進行。
對含或不含輔助溶劑的潮溼調配物來說,可在加入全部組分後,藉由讓剝除劑溶液與固體乾燥劑,諸如例如分子篩、氫化鈣、硫酸鈣或乾燥劑組合接觸,而對剝除劑溶液進行乾燥。較佳的乾燥劑為一種活化的3A或4A分子篩。對包含輔助溶劑的無水剝除劑溶液來說,較佳的是結合四級氫氧化銨(及任何其它潮溼組分),讓所產生的溶液與活性乾燥劑如分子篩接觸,分離無水溶液與廢乾燥劑,以及將任何剩餘的無水組分加至無水溶液。與分子篩或其它固體乾燥劑之接觸,可藉由任何已知的方法,諸如漿化該溶液與乾燥劑及過濾該無水漿料。類似地,上述描述的任何潮溼溶液可藉由讓潮溼溶液通過在管柱中的粒化活化分子篩或其它乾燥劑來乾燥。合適的分子篩包括型式3A、4A及5A篩。
分子篩亦為將剝除劑溶液維持在無水狀態的較佳乾燥劑
或去濕劑。小粒形式最佳,因為其允許藉由簡單的傾析來移出無水剝除劑溶液。但是,對於傾析無法提供適當分離之應用中,可將分子篩(不論是粉末或丸粒)摻入"茶包"設備中,其將允許與溶液平衡,但不會讓任何篩顆粒污染溶液。包含分子篩的無水剝除劑溶液可在容器已經打開後維持於無水狀態一段延長的時間,此端視剝除劑溶液所包含的分子篩量、環境濕度及容器打開之時間量來決定。
在攪拌下分別結合列在表I中的反應物,以提供13種均勻剝除劑溶液之各者。測量凝固點且亦將資料提供在表I中。可選擇性將實施例1-13的組成物配製成不含界面活性劑及配製成包含腐蝕抑制劑。
將上面具有光阻劑的矽晶圓浸入來自實施例1之剝除溶液中,伴隨攪拌維持在約70℃的溫度約30至約60分鐘。移出該晶圓,以DI水沖洗及乾燥。晶圓之檢驗將說明實質上全部的光阻劑已經除去。對某些應用來說,可藉由將晶圓浸入剝除溶液而沒有攪拌及/或浸漬該晶圓歷時至高達150分鐘來獲得優異的結果。從晶圓除去光阻劑的較佳方式可容易地決定而無需過度實驗。此方法可用來除去存在於具有二層聚合物層的雙層光阻劑中之單層聚合光阻劑或二層聚合層。
將上面具有光阻劑的矽晶圓安置在一標準噴灑裝置中,且以來自實施例2之剝除劑溶液噴灑,並維持在約50℃下。可選擇性在惰性氣氛中或選擇性於活性氣體如例如氧、氟或矽烷存在下進行該噴灑。可週期性移出及檢查該晶圓,以測定何時已經除去足夠的光阻劑。當已經除去足
夠的光阻劑時,可使用異丙醇來沖洗晶圓及乾燥。此方法可用來除去存在於具有二層聚合物層之雙層光阻劑中的單層聚合光阻劑或二層聚合層。
描述在實施例14及15中的方法可與此揭示之剝除劑溶液一起使用,以從由多種材料(包括GaAs)所構成晶圓除去光阻劑。此外,正型與負型光阻劑二者都可用這二種方法除去。
在實施例14、15及16中所描述的方法可類似地與描述於本文之無水剝除劑溶液一起使用。
使用在實施例14中所描述的方法從描述在下表II中之晶圓除去光阻劑。使用20升體積的三種剝除劑溶液,直到光阻聚合物之殘餘物殘留在晶圓上,或直到發生聚合物或其降解產物再沉積到該晶圓上,在此點即到達該溶液的負載力。使用此方法,對在上述實施例1及2中所描述的二種剝除劑溶液及對一般為目前商業剝除劑溶液代表之比較例測定負載力。
結合二甲亞碸(85.5克)、二乙二醇單甲基醚(6.0克)、胺基乙基乙醇胺(2.7克)及氫氧化四甲基銨五水合物(5.5克),以提供一包含約3重量%的水及乾度係數約0.9之剝除劑溶液。藉由稍微攪拌該混合物來促進氫氧化物五水合物之溶解。在該溶液中約3重量%的水實質上來自該五水合物。
將活性3A分子篩加至根據實施例17之方法所製備的三種不同剝除劑溶液樣品中,且在周溫下維持與剝除劑溶液接觸72小時。藉由過濾除去該篩,且使用卡爾費雪(Karl Fischer)方法來測定初始及乾燥溶液之水分含量。將乾燥的剝除劑溶液貯存在封閉容器中。可將廢篩乾燥以供重複利用,或可將其扔掉。此實驗的具體細節表列在下表III中。
在此實施例中可以變化量的氫化鈣和其它固體去濕劑來取代分子篩,以提供具有類似減低水含量之剝除劑溶液。
將三片上面有負型以丙烯酸酯聚合物為基礎的乾膜光阻劑(120微米)置於銅區域上之矽晶圓分別浸入在實施例18中所製備的三種無水剝除劑溶液中且維持在70℃下60分鐘。移出樣品且以去離子水沖洗一分鐘。使用(LiQuilaz SO5顆粒分析器分析懸浮於所產生的剝除劑溶液中之光阻劑顆粒數,且對每片晶圓測定銅蝕刻速率。結果列在下文所提供的表IV中。LiQuilaz為顆粒測量系統公司(Particle Measuring Systems,Inc.,5475 Airport Blvd.,Boulder,Colorado,80301)之註冊商標。
如上所述之光阻劑去除可在範圍從約70℃至約80℃之溫度下進行而無需採用任何排除水分的措施。但是,當在低
於約70℃的較低溫度下進行光阻劑去除時,採用使水分從大氣中吸收減到最小的措施可為有益的。在維持在低於約70℃之剝除劑溶液上提供乾燥氮覆蓋層已證明可有效使因剝除劑溶液較長時間曝露至潮濕大氣所致的水吸收減到最小。上述無水剝除劑溶液可溶解較大量光阻劑且使分散於剝除劑溶液中之顆粒數減到最小的能力可延長剝除劑溶液之有效壽命及減低整體成本。
製備氫氧化四甲基銨五水合物在甲醇中的25重量%溶液,且在水浴中將40.8克的該溶液升溫至約30℃並將壓力維持在約0.01毫米汞柱下約75分鐘。在以液態氮冷卻的杜耳(Dewar)燒瓶中收集冷凝物。在約75分鐘後,將水浴的溫度提昇至約35℃且維持在此溫度下額外105分鐘。產生白色糊狀物。中斷真空且加入85.8克的無水DMSO以溶解該白色固體,在此之後,加入6.0克之二乙二醇單甲基醚及2.7克之胺基乙基乙醇胺,以提供描述在實施例1之表I中的剝除劑溶液之實質上無水形式。藉由卡爾費雪方法實測出該無水剝除劑溶液的水含量為0.71%,且該溶液包含少於1%的甲醇。可藉由將額外的甲醇加至白色糊狀物且將所產生的溶液維持在減壓下額外2至5小時來獲得較低的水含量。
將適當量在實施例18中所描述類型之無水剝除劑溶液與活性分子篩一起包裝,以將該剝除劑溶液維持在無水狀態
下一段較長的時間。每100克維持在封閉及密封容器中之剝除劑溶液加入約5至約10克的活性篩。呈丸粒形式之分子篩較佳。但是,若在使用前藉過濾除去或若小量微粒物質不會干擾無水剝除劑溶液之使用時,可使用粉末化的篩。
雖然已參考上述之特定具體實例來提供申請人的揭示,但需了解的是,熟知技藝之人士對所揭示的具體實例可做出修改及改變而不脫離本發明之精神及範圍。本發明意欲涵蓋全部的此類修改及改變。
Claims (16)
- 一種從基板除去光阻劑的方法,該方法包括:(a)選擇上面具有光阻劑的基板;(b)讓基板與剝除劑溶液接觸一段足以除去所欲光阻劑量之時間,其中該剝除劑溶液包括:i)自約20%至約90%之二甲亞碸;ii)自約1%至約7%之四級銨氫氧化物;iii)自約1%至約75%之烷醇胺,其具有至少二個碳原子、至少一個胺基取代基及至少一個羥基取代基,該胺基及羥基取代基係接附至不同碳原子;及iv)自約0.01重量%至約3重量%之界面活性劑;及(c)從基板沖洗掉剝除劑溶液。
- 如申請專利範圍第1項之方法,其中該四級銨氫氧化物具有為(C1-C8)烷基、芳烷基或其組合的取代基。
- 如申請專利範圍第1項之溶液,其中四級銨氫氧化物為氫氧化四甲基銨。
- 如申請專利範圍第1項之方法,其中烷醇胺為下式的化合物:
- 如申請專利範圍第4項之方法,其中R1為氫。
- 如申請專利範圍第4項之方法,其中R1為CH2CH2NH2。
- 如申請專利範圍第1項之方法,其中該剝除劑溶液額外包含自約2至約35重量%的輔助溶劑。
- 如申請專利範圍第7項之方法,其中該輔助溶劑為二醇醚。
- 如申請專利範圍第8項之方法,其中該二醇醚為二乙二醇單甲基醚。
- 如申請專利範圍第1項之方法,其中該接觸包括將該基板浸入該剝除劑溶液中。
- 如申請專利範圍第1項之方法,其中在接觸期間該剝除劑溶液維持在至少約20℃的溫度。
- 如申請專利範圍第11項之方法,其中在接觸期間該剝除劑溶液維持在至少約50℃的溫度。
- 如申請專利範圍第1項之方法,其中該沖洗係使用水。
- 如申請專利範圍第1項之方法,其中該沖洗係使用醇。
- 如申請專利範圍第10項之方法,其中該接觸進一步包括在浸入期間攪動該剝除劑溶液。
- 如申請專利範圍第15項之方法,其中該攪動係藉由機械攪拌該剝除劑溶液、藉由循環該剝除劑溶液或藉由吹入惰性氣體氣泡通過該剝除劑溶液來達成。
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
JP4906516B2 (ja) * | 2006-01-11 | 2012-03-28 | 東進セミケム株式会社 | Tft−lcd用カラーレジスト剥離液組成物 |
TWI450052B (zh) * | 2008-06-24 | 2014-08-21 | Dynaloy Llc | 用於後段製程操作有效之剝離溶液 |
JP2010111795A (ja) * | 2008-11-07 | 2010-05-20 | Chisso Corp | 剥離液 |
JP4673935B2 (ja) * | 2008-12-26 | 2011-04-20 | 神戸天然物化学株式会社 | 低含水量のフォトレジスト剥離液用濃縮液の製造方法 |
US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
JP6165442B2 (ja) * | 2009-07-30 | 2017-07-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 |
CN102043356B (zh) * | 2009-10-13 | 2012-09-26 | 奇美实业股份有限公司 | 清洗基板用洗净液组成物 |
TWI539493B (zh) | 2010-03-08 | 2016-06-21 | 黛納羅伊有限責任公司 | 用於摻雜具有分子單層之矽基材之方法及組合物 |
US8987181B2 (en) | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
WO2014104192A1 (ja) * | 2012-12-27 | 2014-07-03 | 富士フイルム株式会社 | レジスト除去液およびレジスト剥離方法 |
JP6040089B2 (ja) * | 2013-04-17 | 2016-12-07 | 富士フイルム株式会社 | レジスト除去液、これを用いたレジスト除去方法およびフォトマスクの製造方法 |
JP6165665B2 (ja) | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
TWI690780B (zh) * | 2014-12-30 | 2020-04-11 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻之剝離組成物 |
JP6808714B2 (ja) | 2015-08-03 | 2021-01-06 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 洗浄組成物 |
US10072237B2 (en) | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
KR102423325B1 (ko) * | 2016-03-01 | 2022-07-20 | 도오꾜오까고오교 가부시끼가이샤 | 반도체 기판 또는 장치의 세정액 및 세정 방법 |
KR102612139B1 (ko) * | 2017-08-02 | 2023-12-08 | 주식회사 쿠라레 | 회수 레지스트 박리제로부터의 디메틸술폭시드의 회수 방법 |
KR101928830B1 (ko) | 2018-01-19 | 2018-12-13 | (주)엠티아이 | 웨이퍼 가공용 보호코팅제 박리용 박리제 |
KR102038056B1 (ko) * | 2018-01-19 | 2019-10-30 | 주식회사 엠티아이 | 다이싱 공정용 보호코팅제 박리용 박리제 |
KR20200053096A (ko) * | 2018-11-08 | 2020-05-18 | 삼성전자주식회사 | 반도체 칩의 세정 방법 및 이를 수행하기 위한 장치 |
Family Cites Families (133)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3562038A (en) | 1968-05-15 | 1971-02-09 | Shipley Co | Metallizing a substrate in a selective pattern utilizing a noble metal colloid catalytic to the metal to be deposited |
US3673099A (en) | 1970-10-19 | 1972-06-27 | Bell Telephone Labor Inc | Process and composition for stripping cured resins from substrates |
US3920695A (en) * | 1972-07-26 | 1975-11-18 | Minnesota Mining & Mfg | Silicone-compatible indigo dyestuffs |
US3981859A (en) * | 1972-07-26 | 1976-09-21 | Minnesota Mining And Manufacturing Company | Silicone-compatible azo dyestuffs |
US4038293A (en) * | 1972-07-26 | 1977-07-26 | Minnesota Mining And Manufacturing Company | Silicone-compatible tris(trimethylsilyloxy)silylalkylamino-substituted quinoncid dyestuffs |
US3888891A (en) * | 1972-07-26 | 1975-06-10 | Minnesota Mining & Mfg | Silicone-compatible dyestuffs |
US3873668A (en) * | 1973-03-27 | 1975-03-25 | Du Pont | Cupric, nickelous and argentous ion-selective chelating resins |
US3963744A (en) * | 1974-08-28 | 1976-06-15 | Minnesota Mining And Manufacturing Company | Silicone-compatible phthalocyanine dyestuffs |
JPS58139430A (ja) * | 1982-02-15 | 1983-08-18 | Toray Ind Inc | レジストの剥離法 |
US4547271A (en) * | 1984-09-12 | 1985-10-15 | Canada Packers Inc. | Process for the electrochemical reduction of 7-ketolithocholic acid to ursodeoxycholic acid |
DE3529960A1 (de) * | 1985-08-22 | 1987-03-05 | Boehringer Ingelheim Kg | Aminosaeure-derivate, verfahren zu ihrer herstellung und verwendung |
JPS62188785A (ja) | 1986-02-14 | 1987-08-18 | Mitsubishi Electric Corp | 銅及び銅合金の光沢酸洗い液 |
JPS63215041A (ja) | 1987-03-04 | 1988-09-07 | Toshiba Corp | 結晶欠陥評価用エツチング液 |
US4830641A (en) * | 1987-04-13 | 1989-05-16 | Pall Corporation | Sorbing apparatus |
JP2553872B2 (ja) | 1987-07-21 | 1996-11-13 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JPH0728254B2 (ja) | 1989-09-14 | 1995-03-29 | 日本電気株式会社 | 衛星回線監視方式 |
ES2091905T3 (es) * | 1989-12-29 | 1996-11-16 | Lucky Ltd | Un procedimiento para la preparacion de una resina acrilica resistente al calor y transparente. |
US6187730B1 (en) | 1990-11-05 | 2001-02-13 | Ekc Technology, Inc. | Hydroxylamine-gallic compound composition and process |
US5928430A (en) | 1991-01-25 | 1999-07-27 | Advanced Scientific Concepts, Inc. | Aqueous stripping and cleaning compositions containing hydroxylamine and use thereof |
JP3160344B2 (ja) | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
US5117063A (en) * | 1991-06-21 | 1992-05-26 | Monsanto Company | Method of preparing 4-aminodiphenylamine |
US5304284A (en) | 1991-10-18 | 1994-04-19 | International Business Machines Corporation | Methods for etching a less reactive material in the presence of a more reactive material |
US5468423A (en) | 1992-02-07 | 1995-11-21 | The Clorox Company | Reduced residue hard surface cleaner |
US5252737A (en) * | 1992-05-22 | 1993-10-12 | Monsanto Company | Process for preparing N-aliphatic substituted p-phenylenediamines |
US7144848B2 (en) * | 1992-07-09 | 2006-12-05 | Ekc Technology, Inc. | Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal |
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US5233010A (en) * | 1992-10-15 | 1993-08-03 | Monsanto Company | Process for preparing isocyanate and carbamate ester products |
US5308745A (en) | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
EP0609496B1 (de) | 1993-01-19 | 1998-04-15 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer Kontakte und diese verbindende Leiterbahnen umfassenden Metallisierungsebene |
JP3302120B2 (ja) | 1993-07-08 | 2002-07-15 | 関東化学株式会社 | レジスト用剥離液 |
JP2951215B2 (ja) | 1993-09-10 | 1999-09-20 | レイセオン・カンパニー | 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法 |
US5419779A (en) | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
US5597678A (en) | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
GB9425031D0 (en) | 1994-12-09 | 1995-02-08 | Alpha Metals Ltd | Printed circuit board manufacture |
US5567574A (en) | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
US5847172A (en) * | 1995-06-07 | 1998-12-08 | Magainin Pharmaceuticals Inc. | Certain aminosterol compounds and pharmaceutical compositions including these compounds |
US5612304A (en) | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
JP2911792B2 (ja) | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US5648324A (en) | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US6900193B1 (en) * | 1996-05-01 | 2005-05-31 | The United States Of America As Represented By The Department Of Health And Human Services | Structural modification of 19-norprogesterone I: 17-α-substituted-11-β-substituted-4-aryl and 21-substituted 19-norpregnadienedione as new antiprogestational agents |
US20040134873A1 (en) | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
US5798323A (en) | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
JP2001520267A (ja) | 1997-10-14 | 2001-10-30 | アドバンスド・ケミカル・システムズ・インターナショナル・インコーポレーテッド | 半導体基板からの残留物をストリッピングするためのホウ酸アンモニウム含有組成物 |
US6033996A (en) | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
US6225030B1 (en) | 1998-03-03 | 2001-05-01 | Tokyo Ohka Kogyo Co., Ltd. | Post-ashing treating method for substrates |
US6063522A (en) * | 1998-03-24 | 2000-05-16 | 3M Innovative Properties Company | Electrolytes containing mixed fluorochemical/hydrocarbon imide and methide salts |
CN100370360C (zh) | 1998-05-18 | 2008-02-20 | 马林克罗特有限公司 | 用于清洗微电子衬底的含硅酸盐碱性组合物 |
US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
JP4224651B2 (ja) | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
US6566322B1 (en) * | 1999-05-27 | 2003-05-20 | Mcmaster University | Chelating silicone polymers |
WO2001013179A1 (en) * | 1999-08-13 | 2001-02-22 | Board Of Regents, University Of Texas System | Water-processable photoresist compositions |
KR100335011B1 (ko) | 1999-08-19 | 2002-05-02 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
KR100298572B1 (ko) * | 1999-08-19 | 2001-09-22 | 박찬구 | 카바아닐라이드로부터 4-니트로디페닐아민과 4-니트로소디페닐아민의 제조방법 |
JP2001100436A (ja) | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
DE60019458T2 (de) | 1999-12-14 | 2006-02-23 | Thermo BioStar, Inc., Boulder | Stabilisierendes verdünnungsmittel für polypeptide und antigene |
KR100378552B1 (ko) * | 2000-01-14 | 2003-03-29 | 주식회사 동진쎄미켐 | 레지스트 리무버 조성물 |
JP3339575B2 (ja) | 2000-01-25 | 2002-10-28 | 日本電気株式会社 | 剥離剤組成物および剥離方法 |
GB0003961D0 (en) * | 2000-02-21 | 2000-04-12 | Ici Plc | Catalysts |
US6319835B1 (en) | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
US6531436B1 (en) | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
US6475966B1 (en) | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
JP2001244258A (ja) | 2000-02-29 | 2001-09-07 | Sumitomo Bakelite Co Ltd | 半導体用有機絶縁膜形成方法 |
US7456140B2 (en) | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
AU2001278890A1 (en) | 2000-07-10 | 2002-01-21 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
US6455479B1 (en) | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
TW554258B (en) | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
US7084080B2 (en) | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
CN1238770C (zh) * | 2001-05-21 | 2006-01-25 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
US6482656B1 (en) | 2001-06-04 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit |
JP4810764B2 (ja) | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
MY139607A (en) | 2001-07-09 | 2009-10-30 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP2004538503A (ja) | 2001-07-13 | 2004-12-24 | イーケーシー テクノロジー,インコーポレイティド | スルホキシド−ピロリドン(ピロリジノン)−アルカノールアミン系剥離および洗浄組成物 |
US6683219B2 (en) * | 2001-07-30 | 2004-01-27 | Wisconsin Alumni Research Foundation | Synthesis of A-ring synthon of 19-nor-1α,25-dihydroxyvitamin D3 from (D)-glucose |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US20040256358A1 (en) | 2001-11-02 | 2004-12-23 | Hidetaka Shimizu | Method for releasing resist |
US7064087B1 (en) | 2001-11-15 | 2006-06-20 | Novellus Systems, Inc. | Phosphorous-doped silicon dioxide process to customize contact etch profiles |
US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US20030138737A1 (en) | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
JP3738992B2 (ja) * | 2001-12-27 | 2006-01-25 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
KR101017738B1 (ko) | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
AU2003218389A1 (en) | 2002-03-25 | 2003-10-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tantalum barrier removal solution |
US6878500B2 (en) | 2002-04-06 | 2005-04-12 | Marlborough, | Stripping method |
US6911293B2 (en) | 2002-04-11 | 2005-06-28 | Clariant Finance (Bvi) Limited | Photoresist compositions comprising acetals and ketals as solvents |
WO2003091376A1 (en) | 2002-04-24 | 2003-11-06 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
US6872633B2 (en) | 2002-05-31 | 2005-03-29 | Chartered Semiconductor Manufacturing Ltd. | Deposition and sputter etch approach to extend the gap fill capability of HDP CVD process to ≦0.10 microns |
US7833957B2 (en) | 2002-08-22 | 2010-11-16 | Daikin Industries, Ltd. | Removing solution |
JP2004093678A (ja) * | 2002-08-29 | 2004-03-25 | Jsr Corp | フォトレジスト用剥離液組成物 |
JP2004101849A (ja) | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | 洗浄剤組成物 |
WO2004042811A1 (ja) | 2002-11-08 | 2004-05-21 | Wako Pure Chemical Industries, Ltd. | 洗浄液及びそれを用いた洗浄方法 |
US6872663B1 (en) | 2002-11-22 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for reworking a multi-layer photoresist following an underlayer development |
US7166362B2 (en) * | 2003-03-25 | 2007-01-23 | Fuji Photo Film Co., Ltd. | Film-forming composition, production process therefor, and porous insulating film |
TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
US6846748B2 (en) | 2003-05-01 | 2005-01-25 | United Microeletronics Corp. | Method for removing photoresist |
US20040220066A1 (en) | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
DE602004030188D1 (de) * | 2003-06-27 | 2011-01-05 | Toyo Ink Mfg Co | Nichtwässrige Tintenstrahldruckertinte |
TWI282377B (en) | 2003-07-25 | 2007-06-11 | Mec Co Ltd | Etchant, replenishment solution and method for producing copper wiring using the same |
US7615377B2 (en) * | 2003-09-05 | 2009-11-10 | Massachusetts Institute Of Technology | Fluorescein-based metal sensors |
US7834043B2 (en) * | 2003-12-11 | 2010-11-16 | Abbott Laboratories | HIV protease inhibiting compounds |
US20060003910A1 (en) | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
US8030263B2 (en) | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
JP4718145B2 (ja) | 2004-08-31 | 2011-07-06 | 富士通株式会社 | 半導体装置及びゲート電極の製造方法 |
US20060073997A1 (en) | 2004-09-30 | 2006-04-06 | Lam Research Corporation | Solutions for cleaning silicon semiconductors or silicon oxides |
US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
JP4541873B2 (ja) * | 2004-12-24 | 2010-09-08 | 株式会社Pfu | インク記録装置 |
KR101331747B1 (ko) * | 2005-01-27 | 2013-11-20 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 기판 처리 조성물 |
CN101228481B (zh) | 2005-02-25 | 2012-12-05 | Ekc技术公司 | 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法 |
KR100621310B1 (ko) * | 2005-05-16 | 2006-09-06 | 금호석유화학 주식회사 | 4-아미노디페닐아민의 제조방법 |
US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
TWI339780B (en) | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
US20070243773A1 (en) * | 2005-10-28 | 2007-10-18 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
CN101356629B (zh) * | 2005-11-09 | 2012-06-06 | 高级技术材料公司 | 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 |
US7674755B2 (en) | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
US20080139436A1 (en) | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US8093150B2 (en) | 2006-09-19 | 2012-01-10 | Infineon Technologies Ag | Methods of manufacturing semiconductor devices and structures thereof |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
US20100104824A1 (en) * | 2006-10-23 | 2010-04-29 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists |
US20100112728A1 (en) | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
US7655608B2 (en) * | 2007-08-03 | 2010-02-02 | Dynaloy, Llc | Reduced metal etch rates using stripper solutions containing a copper salt |
US8551682B2 (en) * | 2007-08-15 | 2013-10-08 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
US20090119979A1 (en) * | 2007-11-08 | 2009-05-14 | Imperial Petroleum, Inc. | Catalysts for production of biodiesel fuel and glycerol |
TWI450052B (zh) | 2008-06-24 | 2014-08-21 | Dynaloy Llc | 用於後段製程操作有效之剝離溶液 |
US8361237B2 (en) | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
JP4673935B2 (ja) * | 2008-12-26 | 2011-04-20 | 神戸天然物化学株式会社 | 低含水量のフォトレジスト剥離液用濃縮液の製造方法 |
US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8518865B2 (en) | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
-
2006
- 2006-10-23 US US11/551,826 patent/US8263539B2/en active Active
- 2006-10-24 EP EP13003730.2A patent/EP2657771A1/en not_active Ceased
- 2006-10-24 EP EP13003729.4A patent/EP2657770B1/en active Active
- 2006-10-24 SG SG2013081401A patent/SG2013081401A/en unknown
- 2006-10-24 EP EP16000417.2A patent/EP3043209B1/en active Active
- 2006-10-24 SG SG2010079036A patent/SG180047A1/en unknown
- 2006-10-24 EP EP06826524.8A patent/EP1941018B1/en active Active
- 2006-10-24 KR KR1020087010205A patent/KR101362527B1/ko active IP Right Grant
- 2006-10-24 WO PCT/US2006/041394 patent/WO2007053363A2/en active Application Filing
- 2006-10-24 US US12/091,808 patent/US20090186793A1/en not_active Abandoned
- 2006-10-24 JP JP2008537862A patent/JP5306817B2/ja active Active
- 2006-10-24 MY MYPI20081195A patent/MY180725A/en unknown
- 2006-10-24 SG SG2013081419A patent/SG2013081419A/en unknown
- 2006-10-27 TW TW101133536A patent/TWI486727B/zh active
- 2006-10-27 TW TW095139695A patent/TWI386765B/zh active
-
2013
- 2013-02-05 US US13/759,237 patent/US9069259B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8263539B2 (en) | 2012-09-11 |
KR101362527B1 (ko) | 2014-02-13 |
US20130172225A1 (en) | 2013-07-04 |
SG2013081401A (en) | 2015-05-28 |
KR20080080280A (ko) | 2008-09-03 |
EP2657770B1 (en) | 2016-03-30 |
JP2009514026A (ja) | 2009-04-02 |
EP1941018B1 (en) | 2013-09-11 |
EP2657771A1 (en) | 2013-10-30 |
TWI486727B (zh) | 2015-06-01 |
WO2007053363A3 (en) | 2009-04-30 |
EP3043209B1 (en) | 2020-04-29 |
WO2007053363A2 (en) | 2007-05-10 |
EP2657770A1 (en) | 2013-10-30 |
TW200736856A (en) | 2007-10-01 |
SG180047A1 (en) | 2012-05-30 |
SG2013081419A (en) | 2015-05-28 |
US20090186793A1 (en) | 2009-07-23 |
EP1941018A4 (en) | 2010-09-29 |
MY180725A (en) | 2020-12-07 |
JP5306817B2 (ja) | 2013-10-02 |
US20070111912A1 (en) | 2007-05-17 |
EP3043209A1 (en) | 2016-07-13 |
TWI386765B (zh) | 2013-02-21 |
EP1941018A2 (en) | 2008-07-09 |
US9069259B2 (en) | 2015-06-30 |
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