TW200926208A - Indium oxide tranparent conductive film and method for making same - Google Patents
Indium oxide tranparent conductive film and method for making same Download PDFInfo
- Publication number
- TW200926208A TW200926208A TW097138082A TW97138082A TW200926208A TW 200926208 A TW200926208 A TW 200926208A TW 097138082 A TW097138082 A TW 097138082A TW 97138082 A TW97138082 A TW 97138082A TW 200926208 A TW200926208 A TW 200926208A
- Authority
- TW
- Taiwan
- Prior art keywords
- transparent conductive
- film
- conductive film
- indium
- annealing
- Prior art date
Links
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 15
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052738 indium Inorganic materials 0.000 claims abstract description 33
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 16
- 238000005477 sputtering target Methods 0.000 claims abstract description 12
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 50
- 238000002425 crystallisation Methods 0.000 claims description 48
- 230000008025 crystallization Effects 0.000 claims description 48
- 229910052718 tin Inorganic materials 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 218
- 239000001301 oxygen Substances 0.000 description 62
- 229910052760 oxygen Inorganic materials 0.000 description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 61
- 230000015572 biosynthetic process Effects 0.000 description 37
- 238000012360 testing method Methods 0.000 description 24
- 239000000758 substrate Substances 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000000203 mixture Substances 0.000 description 18
- 239000000843 powder Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 206010036790 Productive cough Diseases 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 210000003802 sputum Anatomy 0.000 description 3
- 208000024794 sputum Diseases 0.000 description 3
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- IJXBFRYFPMTDHA-UHFFFAOYSA-N indium lanthanum Chemical compound [In].[La] IJXBFRYFPMTDHA-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001629697 Panicum turgidum Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012223 aqueous fraction Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007260436 | 2007-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200926208A true TW200926208A (en) | 2009-06-16 |
Family
ID=40526308
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097138068A TW200926207A (en) | 2007-10-03 | 2008-10-03 | Indium oxide tranparent conductive film and method for making same |
| TW097138074A TWI430956B (zh) | 2007-10-03 | 2008-10-03 | 氧化銦系靶 |
| TW097138083A TW200926209A (en) | 2007-10-03 | 2008-10-03 | Indium oxide transparent conductive film and manufacturing method thereof |
| TW097138073A TWI461365B (zh) | 2007-10-03 | 2008-10-03 | 氧化銦系靶 |
| TW097138082A TW200926208A (en) | 2007-10-03 | 2008-10-03 | Indium oxide tranparent conductive film and method for making same |
| TW097138079A TW200923115A (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
Family Applications Before (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097138068A TW200926207A (en) | 2007-10-03 | 2008-10-03 | Indium oxide tranparent conductive film and method for making same |
| TW097138074A TWI430956B (zh) | 2007-10-03 | 2008-10-03 | 氧化銦系靶 |
| TW097138083A TW200926209A (en) | 2007-10-03 | 2008-10-03 | Indium oxide transparent conductive film and manufacturing method thereof |
| TW097138073A TWI461365B (zh) | 2007-10-03 | 2008-10-03 | 氧化銦系靶 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097138079A TW200923115A (en) | 2007-10-03 | 2008-10-03 | Indium oxide target |
Country Status (4)
| Country | Link |
|---|---|
| JP (6) | JPWO2009044891A1 (ko) |
| KR (6) | KR20100071089A (ko) |
| TW (6) | TW200926207A (ko) |
| WO (6) | WO2009044893A1 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011037679A (ja) * | 2009-08-13 | 2011-02-24 | Tosoh Corp | 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法 |
| KR20170005149A (ko) * | 2009-11-19 | 2017-01-11 | 가부시키가이샤 아루박 | 투명 도전막의 제조 방법, 스퍼터링 장치 및 스퍼터링 타겟 |
| CN102191465A (zh) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | 一种铟掺杂氧化锌靶材及透明导电膜的制备方法 |
| KR101198786B1 (ko) | 2010-06-30 | 2012-11-07 | 현대자동차주식회사 | 가변 압축비 장치 |
| JP5367660B2 (ja) * | 2010-08-31 | 2013-12-11 | Ｊｘ日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
| JP5367659B2 (ja) * | 2010-08-31 | 2013-12-11 | Ｊｘ日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
| JP5817327B2 (ja) | 2010-09-29 | 2015-11-18 | 東ソー株式会社 | 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池 |
| US9418771B2 (en) * | 2011-12-07 | 2016-08-16 | Tosoh Corporation | Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same |
| US8932518B2 (en) | 2012-02-29 | 2015-01-13 | General Electric Company | Mold and facecoat compositions |
| JP5996227B2 (ja) * | 2012-03-26 | 2016-09-21 | 学校法人 龍谷大学 | 酸化物膜及びその製造方法 |
| US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570942A (ja) * | 1991-09-11 | 1993-03-23 | Mitsubishi Materials Corp | スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材 |
| JPH06157036A (ja) * | 1992-11-13 | 1994-06-03 | Nippon Soda Co Ltd | スズドープ酸化インジウム膜の高比抵抗化方法 |
| US5433901A (en) * | 1993-02-11 | 1995-07-18 | Vesuvius Crucible Company | Method of manufacturing an ITO sintered body |
| JP3366046B2 (ja) * | 1993-03-30 | 2003-01-14 | 旭硝子株式会社 | 非晶質透明導電膜 |
| JP3827334B2 (ja) * | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ｉｔｏ焼結体及びスパッタリングターゲット |
| JPH07161235A (ja) * | 1993-12-13 | 1995-06-23 | Matsushita Electric Ind Co Ltd | 透明導電膜およびその製造方法 |
| JPH08264023A (ja) * | 1995-03-27 | 1996-10-11 | Gunze Ltd | 透明導電膜 |
| JP3943617B2 (ja) * | 1995-12-07 | 2007-07-11 | 出光興産株式会社 | 透明導電積層体およびこれを用いたタッチパネル |
| JPH09175837A (ja) * | 1995-12-27 | 1997-07-08 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
| JPH1195239A (ja) * | 1997-09-25 | 1999-04-09 | Toshiba Corp | 液晶表示装置の製造方法 |
| JP3806521B2 (ja) * | 1998-08-27 | 2006-08-09 | 旭硝子セラミックス株式会社 | 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 |
| JP3824289B2 (ja) * | 1998-09-11 | 2006-09-20 | Ｈｏｙａ株式会社 | 透明導電性薄膜 |
| JP3215392B2 (ja) * | 1998-10-13 | 2001-10-02 | ジオマテック株式会社 | 金属酸化物焼結体およびその用途 |
| JP2000169219A (ja) * | 1998-12-09 | 2000-06-20 | Jiomatetsuku Kk | 金属酸化物焼結体およびその用途 |
| JP3632524B2 (ja) * | 1999-09-24 | 2005-03-23 | 東ソー株式会社 | Ｍｇ含有ＩＴＯスパッタリングターゲットおよびＭｇ含有ＩＴＯ蒸着材の製造方法 |
| JP4918737B2 (ja) * | 2001-03-23 | 2012-04-18 | 東ソー株式会社 | 酸化物焼結体およびスパッタリングターゲット |
| JP4424889B2 (ja) * | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| TW570909B (en) * | 2001-06-26 | 2004-01-11 | Mitsui Mining & Smelting Co | Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance |
| JP2003016858A (ja) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | インジウムスズ酸化膜の製造方法 |
| KR100995196B1 (ko) * | 2001-08-02 | 2010-11-17 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 투명 전도막 및 이들의 제조방법 |
| JP4904645B2 (ja) * | 2001-08-10 | 2012-03-28 | 東ソー株式会社 | Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法 |
| JP4075361B2 (ja) * | 2001-11-27 | 2008-04-16 | 東ソー株式会社 | Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法 |
| JP3871562B2 (ja) * | 2001-12-10 | 2007-01-24 | 日東電工株式会社 | 光学素子機能を有する透明導電膜およびその製造方法 |
| JP2004149883A (ja) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
| JP4457669B2 (ja) * | 2004-01-08 | 2010-04-28 | 東ソー株式会社 | スパッタリングターゲットおよびその製造方法 |
| JP2006134789A (ja) * | 2004-11-09 | 2006-05-25 | Idemitsu Kosan Co Ltd | 非晶質透明導電膜及び非晶質透明導電膜積層体並びにこれらの製造方法 |
| JP2006318803A (ja) * | 2005-05-13 | 2006-11-24 | Sony Corp | 透明電極膜及びその製造方法 |
| JP5000230B2 (ja) * | 2006-08-10 | 2012-08-15 | 出光興産株式会社 | 酸化ランタン含有酸化物ターゲット |
| KR100787635B1 (ko) * | 2007-01-22 | 2007-12-21 | 삼성코닝 주식회사 | 산화인듐주석 타겟, 이의 제조 방법 및 이로부터 제조된산화인듐주석 투명 전극 |
| JP4855964B2 (ja) * | 2007-02-09 | 2012-01-18 | 株式会社アルバック | Ｉｔｏ燒結体、ｉｔｏスパッタリングターゲット及びその製造方法 |
-
2008
- 2008-10-03 WO PCT/JP2008/068102 patent/WO2009044893A1/ja active Application Filing
- 2008-10-03 KR KR1020107009347A patent/KR20100071089A/ko not_active Application Discontinuation
- 2008-10-03 KR KR1020107009344A patent/KR20100063136A/ko not_active Application Discontinuation
- 2008-10-03 JP JP2008550294A patent/JPWO2009044891A1/ja active Pending
- 2008-10-03 JP JP2008550296A patent/JP5464319B2/ja active Active
- 2008-10-03 WO PCT/JP2008/068100 patent/WO2009044891A1/ja active Application Filing
- 2008-10-03 WO PCT/JP2008/068101 patent/WO2009044892A1/ja active Application Filing
- 2008-10-03 KR KR1020107009349A patent/KR20100063137A/ko not_active Application Discontinuation
- 2008-10-03 TW TW097138068A patent/TW200926207A/zh unknown
- 2008-10-03 TW TW097138074A patent/TWI430956B/zh active
- 2008-10-03 WO PCT/JP2008/068097 patent/WO2009044888A1/ja active Application Filing
- 2008-10-03 TW TW097138083A patent/TW200926209A/zh unknown
- 2008-10-03 KR KR1020107009350A patent/KR101200386B1/ko active IP Right Grant
- 2008-10-03 JP JP2008550298A patent/JPWO2009044892A1/ja active Pending
- 2008-10-03 TW TW097138073A patent/TWI461365B/zh active
- 2008-10-03 TW TW097138082A patent/TW200926208A/zh unknown
- 2008-10-03 JP JP2008550302A patent/JPWO2009044893A1/ja active Pending
- 2008-10-03 WO PCT/JP2008/068099 patent/WO2009044890A1/ja active Application Filing
- 2008-10-03 JP JP2008550292A patent/JP5237827B2/ja active Active
- 2008-10-03 JP JP2008550297A patent/JPWO2009044889A1/ja not_active Withdrawn
- 2008-10-03 KR KR1020107009343A patent/KR20100063135A/ko not_active Application Discontinuation
- 2008-10-03 TW TW097138079A patent/TW200923115A/zh unknown
- 2008-10-03 KR KR1020107009346A patent/KR20100067118A/ko not_active Application Discontinuation
- 2008-10-03 WO PCT/JP2008/068098 patent/WO2009044889A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2009044890A1 (ja) | 2011-02-10 |
| TW200927657A (en) | 2009-07-01 |
| WO2009044889A1 (ja) | 2009-04-09 |
| KR20100063136A (ko) | 2010-06-10 |
| KR20100071089A (ko) | 2010-06-28 |
| WO2009044890A1 (ja) | 2009-04-09 |
| JPWO2009044891A1 (ja) | 2011-02-10 |
| WO2009044893A1 (ja) | 2009-04-09 |
| TWI430956B (zh) | 2014-03-21 |
| JPWO2009044893A1 (ja) | 2011-02-10 |
| WO2009044891A1 (ja) | 2009-04-09 |
| TWI461365B (zh) | 2014-11-21 |
| JPWO2009044892A1 (ja) | 2011-02-10 |
| JPWO2009044889A1 (ja) | 2011-02-10 |
| JP5464319B2 (ja) | 2014-04-09 |
| WO2009044892A1 (ja) | 2009-04-09 |
| JP5237827B2 (ja) | 2013-07-17 |
| TW200926209A (en) | 2009-06-16 |
| KR20100063135A (ko) | 2010-06-10 |
| TW200923115A (en) | 2009-06-01 |
| KR20100071090A (ko) | 2010-06-28 |
| KR20100067118A (ko) | 2010-06-18 |
| KR101200386B1 (ko) | 2012-11-12 |
| WO2009044888A1 (ja) | 2009-04-09 |
| KR20100063137A (ko) | 2010-06-10 |
| JPWO2009044888A1 (ja) | 2011-02-10 |
| TW200926207A (en) | 2009-06-16 |
| TW200927658A (en) | 2009-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200926208A (en) | Indium oxide tranparent conductive film and method for making same | |
| TWI653352B (zh) | Oxide sintered body, method of manufacturing the same, sputtering target, and semiconductor device | |
| JP6161095B2 (ja) | 光吸収層及びこの層を有する層系、層系の製造方法及びこのために適したスパッタターゲット | |
| JP4875135B2 (ja) | Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット | |
| KR101789347B1 (ko) | 투명 도전막 | |
| TWI376701B (ko) | ||
| TW201615596A (zh) | 氧化物燒結體及半導體裝置 | |
| JP6137382B2 (ja) | 導電性酸化物およびその製造方法ならびに酸化物半導体膜の製造方法 | |
| TW201607913A (zh) | 氧化物燒結體及其製造方法、濺鍍靶、以及半導體裝置 | |
| KR20180123597A (ko) | 산화물 소결체 및 그 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스의 제조 방법 | |
| TW201808810A (zh) | 氧化物燒結體及其製造方法、濺鍍靶、以及半導體裝置之製造方法 | |
| JP2021075797A (ja) | 結晶質酸化物薄膜、アモルファス酸化物薄膜、薄膜トランジスタ、及び電子機器 | |
| JP2007176706A (ja) | 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜 | |
| TWI576443B (zh) | Copper alloy film, copper laminated film, wiring electrode, input device and touch panel sensor | |
| TW201013709A (en) | Zinc oxide group transparent conductive film and process for making same | |
| JP2011238968A (ja) | Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット | |
| TW200923973A (en) | Indium oxide transparent conductive film and manufacturing method thereof | |
| TW200927972A (en) | Method for making indium oxide tranparent conductive film | |
| TW201212047A (en) | Substrate with transparent conductive multilayer structure and process for producing same | |
| KR102406137B1 (ko) | 산화물 소결체 및 그 제조 방법, 스퍼터 타겟, 그리고 반도체 디바이스의 제조 방법 | |
| Pan et al. | A comparative study on the structural properties and electrical characteristics of thin HoTixOy, TmTixOy and YbTixOy dielectrics | |
| JP6233447B2 (ja) | 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス | |
| JP2001307553A (ja) | 透明導電膜およびその製造方法並びにその用途 | |
| Takahashi et al. | Effect of deposition temperature and post-heat-treatment condition on the characteristics of (100)-self-orientation LaNiO3 films prepared by RF magnetron sputter deposition |