TW200905729A - Frequency doubling using spacer mask - Google Patents
Frequency doubling using spacer mask Download PDFInfo
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- TW200905729A TW200905729A TW097119767A TW97119767A TW200905729A TW 200905729 A TW200905729 A TW 200905729A TW 097119767 A TW097119767 A TW 097119767A TW 97119767 A TW97119767 A TW 97119767A TW 200905729 A TW200905729 A TW 200905729A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Description
200905729 九、發明說明: 【發明所屬之技術領域】 本發明之實施例係有關於半導體處理的領域。特 地,本發明之實施例係有關於製造半導體元件的方法。 【先前技術】 過去數十年,積體電路中特徵的尺寸化已經成為持 成長之半導體工業的驅動力。將特徵的尺寸縮小到更小 允許在有限的半導體晶片面積上增加功能性單元的密度 舉例而言,縮小的電晶體尺寸可以允許將大量的邏輯與 憶體元件併入到一微處理器上,因而製造了具有高複雜 的產品。 然而,尺寸化並非沒有後果。當微電子電路的基本 構塊縮小時,並且當一給定區域中製造的基本建構塊的 目增加時,用來圖案化該些建構塊的微影製程的限制則 著地提高。尤其,在一半導體疊堆中最小的特徵尺寸(即 界尺寸)與這樣的特徵間的間隔之間具有消長關 (trade-off)。第1 A - C圖係繪示根據習知技術之一傳統半 體微影製程的截面圖。 參照第1A圖,在一半導體疊堆102上方提供一光 層 104。在光阻層 104上方設置一罩幕(mask)或罩 (reticle) 106。一微影製程包括將光阻層104暴露於具有 定波長的光(hv),如第1 A圖之箭頭所示。參照第1 B圖 接著將光阻層104顯影,以在半導體疊堆102上方提供 別
續 能 〇 記 度 建 數 顯 臨 係 導 阻 幕 特 圖 5 200905729 案化的光阻層108。也就是,現在去除光阻層104暴露於 光的部分。圖案化光阻層1 08的每一特徵的寬度係為“X”。 每一特徵之間的間隔係為“y”。一般來說,微影製程的極限 是提供具有臨界尺寸的特徵,其中該臨界尺寸等於該些特 徵之間的間隔(亦即X = y ),如第1 B圖所示。 參照第1 C圖,可以縮小一特徵的臨界尺寸(即寬度“X”) 以在半導體疊堆102上方形成圖案化光阻層110。可以藉 由在第1 A圖所繪示之微影操作期間將光阻層1 04過度曝 光,或藉由接著削減(trim)第1B圖之圖案化光阻層108, 來縮小臨界尺寸。然而,臨界尺寸的縮小係致使特徵間之 間隔(如第1 C圖中間隔“y”)的增加。換言之,來自圖案化 光阻層11 0之每一特徵所能達到的最小尺寸以及每一特徵 間的間隔之間具有一消長關係。 故,本文係描述一種倍增半導體微影製程之頻率的方 法。 【發明内容】 一種用以製造一半導體罩幕的方法係包含··提供一半 導體疊堆,該半導體疊堆具有一犧牲罩幕與一間隙物罩 幕,其中該犧牲罩幕包含一系列的線,並且其中該間隙物 罩幕包含鄰接該系列線之側壁的多個間隙物線;以及在修 整該間隙物罩幕後,去除該犧牲罩幕。 一種用以製造一半導體罩幕的方法係包含•提供一半 導體疊堆,該半導體疊堆具有一犧牲罩幕,該犧牲罩幕是 6 200905729 由一系列的線組成;在該半導體疊堆上方沉積一與該犧 罩幕共形的間隙物層;蝕刻該間隙物層,以提供一間隙 罩幕且暴露出該犧牲罩幕之頂表面,該間隙物罩幕包含 接該犧牲罩幕之該系列線之側壁的多個間隙物線;在該 隙物罩幕與該犧牲罩幕上方沉積且圖案化一光阻層,以 露一部分之該間隙物罩幕;蝕刻該間隙物罩幕之暴露 分,以修整該間隙物罩幕;以及在蝕刻該間隙物罩幕後 去除該犧牲罩幕,以提供一經修整的間隙物罩幕。 一種用以製造一半導體罩幕的方法係包含:提供一 導體疊堆,該半導體疊堆具有一罩幕層;沉積且圖案化 第一光阻層,以在該罩幕層上方形成一圖像;蝕刻該罩 層以形成一具有該圖像之犧牲罩幕,其中該犧牲罩幕包 一系列的線;在該半導體疊堆上方沉積一與該犧牲罩幕 形的間隙物層;沉積且圖案化一第二光阻層,以在該間 物層上方形成一區塊保留罩幕;蝕刻該間隙物層以提供 包含多個間隙物區域與多個區塊保留區域之間隙物罩幕 其中該些間隙物區域係鄰接該犧牲罩幕之該系列線之 壁,並且其中蝕刻該間隙物層的步驟係暴露該犧牲罩幕 頂表面;在該間隙物罩幕與該犧牲罩幕上方沉積且圖案 一第三光阻層*以暴露該間隙物罩幕之該些間隙物區域 至少一部分;蝕刻該間隙物罩幕之該些間隙物區域的暴 部分,以修整該間隙物罩幕;以及去除該犧牲罩幕。 一種用以製造一半導體罩幕的方法係包含:提供一 導體疊堆,該半導體疊堆具有一罩幕層;沉積且圖案化 牲 物 鄰 間 暴 部 半 幕 含 共 隙 側 之 化 的 露 半 7 200905729 第一光阻層,以在該罩幕層上方形成一圖像;蝕刻該罩幕 層以形成一具有該圖像之犧牲罩幕,其中該犧牲罩幕包含 一系列的線;在該半導體疊堆上方沉積一與該犧牲罩幕共 形的間隙物層;在該間隙物層與該犧牲罩幕上方沉積且圖 案化一第二光阻層,以暴露該間隙物層之該些間隙物區域 的至少一部分;蝕刻該間隙物層之該些間隙物區域的暴露 部分,以形成一經修整的間隙物層;沉積且圖案化一第三 光阻層,以在該經修整的間隙物層上方形成一區塊保留罩 幕;蝕刻該經修整的間隙物層,以提供一包含多個間隙物 區域與多個區塊保留區域的間隙物罩幕,其中該些間隙物 區域係鄰接該犧牲罩幕之該系列線之側壁,並且其中蝕刻 該經修整之間隙物層的步驟係暴露該犧牲罩幕之頂表面; 以及去除該犧牲罩幕。 【實施方式】 本文係描述一種倍增半導體微影製程之頻率的方法。 在下文,本文揭示許多細節,例如製造條件與材料,以提 供完整的本發明瞭解。熟習此技藝之人士可以在不具有這 些細節下即能實施本發明。在其他情況中,沒有詳細地敘 述公知的特徵(例如積體電路設計配置或光阻顯影製程), 以避免不必要地模糊化本發明。又,應當瞭解,圖式中顯 示的各種實施例僅為了說明代表之用,並且沒有必要按比 例繪製。 在一實施例中,本發明提供一種用以製造半導體罩幕 8 200905729
的方法。首先,提供一半導體疊维係,該半導體疊堆具有 一犧牲罩幕與一間隙物罩幕。在一實施例中,該犧牲罩幕 包含一系列的線,並且該間隙物罩幕具有鄰接該系列線之 側壁的多個間隙物線。然後,修整(crop)間隙物罩幕,以 提供一經修整的間隙物罩幕 著去除犧牲罩幕。在一特定 先在半導體疊堆上方沉積與 形成。接著,蝕刻間隙物層 牲罩幕的頂表面,該間隙物 列線之側壁的多個間隙物線 積且圖案化一光阻層,以暴 間隙物罩幕的暴露部分,以 犧牲罩幕’僅留下經修整的 ,並且在修整間隙物罩幕後接 實施例中,間隙物罩幕是藉由 犧牲罩幕共形的一間隙物層來 ,以提供間隙物罩幕且暴露犧 罩幕具有鄰接犧牲罩幕之該系 。進而,在間隙物罩幕上方沉 露一部分的間隙物罩幕。蝕刻 修整間隙物罩幕。最後,去除 間隙物罩幕。
两問衣化―間隙物罩幕來倍 a例如,根據本發明之-實施你】,間陽:物罩幕係被製造 成具有多個間嶋,該些間隙物線係鄰接經微影圖案化 之犧牲罩幕的侧壁。因&,對於犧牲罩幕中每一條線,可 ::產生間隙物罩幕的兩條間隙物線…在去除犧牲罩幕 可以製造對於每-條線提供實質上相同臨界尺寸的半 體圖案化罩I’或相同特徵寬度,但在一特定區域中罝 :倍的線密纟。例如’根據本發明之—實施例,犧牲罩 ::距係被選…,以為了最终地提供 隙物罩幕。 ’j 為 了提供不會包覆犧牲罩 幕之線末端的間隙物線 間 9 200905729 隙物罩幕可以不需要被修整(crop)。修整操作期間對於間 隙物罩幕的損壞可以藉由保留犧牲罩幕直到間隙物罩幕已 經被修整來避免。例如,根據本發明之一實施例,一間隙 物罩幕包含直接鄰接犧牲罩幕中線之側壁的間隙物區域, 包括環繞每一條線的末端。與間隙物罩幕之每一條線相關 的間隙物罩幕的每一對間隙物區域係連接。希望的是在間 隙物罩幕中產生彼此不連續的線。在一實施例中,包覆犧 牲罩幕中線末端之間隙物罩幕的部分係在一圖案化/蝕刻 製程中被修整。在不存在犧牲罩幕時,間隙物罩幕可能沒 有足夠完整性以經得起圖案化/蝕刻製程。根據本發明之一 實施例,犧牲罩幕係在修整製程期間被保留,以在整個製 程中提供結構支撐予間隙物罩幕。在修整間隙物罩幕之 後,可以去除犧牲罩幕,以僅提供經修整的間隙物罩幕。 在一特定實施例中,接著將經修整的間隙物罩幕的圖像轉 移到一半導體疊堆。 間隙物罩幕的製造可以包括一修整的製程順序,在此 修整製程順序期間,保留一犧牲罩幕以提供結構完整性予 間隙物罩幕。第2圖為一流程圖2 0 0,其係繪示根據本發 明一實施例之間隙物罩幕製造過程的示範性方法。第3 A - Η 圖係繪示根據本發明一實施例在應用於半導體疊堆時,伴 隨流程圖2 0 0示範性方法的截面圖。 參照流程圖200之操作202與204以及相應的第3Α 圖,在一半導體疊堆 300上方提供一經圖案化的光阻層 302。在一實施例中,半導體疊堆300是由一第一罩幕疊堆 10 200905729 304與一位在半導體層308上方的第二罩幕疊堆306所組 成。 圖案化光阻層3 0 2可以由任何適於用在微影製程的材 料組成。在一實施例中,圖案化光阻層3 0 2可以藉由先以 罩幕覆蓋住一毯覆光阻材料層且接著將其暴露於光源來形 成。其次,透過將該毯覆光阻層顯影以形成圖案化光阻層 3 0 2。在一實施例中,在將光阻層顯影時,光阻層暴露於光 源的部分會被去除。因此,在此實施例中,圖案化光阻層 3 0 2是由正型光阻材料組成。在一特定實施例中,圖案化 光阻層 3 02是由正型光阻組成,其係從由 248 nm阻劑、 1 9 3 n m 阻劑 、1 5 7 n m 阻劑與具有重氮奈酿 (diazonaphthoquinone)感光劑之酌樹脂母體所構成群組來 選擇。在另一實施例中,在將光阻層顯影時,光阻層暴露 於光源的部分會被保留。因此,在此實施例中,圖案化光 阻層3 0 2是由負型光阻材料組成。在一特定實施例中,圖 案化光阻層3 02是由負型光阻組成,其係從由聚順異戊二 烯與聚乙烯肉桂酸酯所構成群組來選擇。 圖案化光阻層3 02可具有任何適於用在間隙物罩幕製 程的尺寸。根據本發明之一實施例,圖案化光阻層3 0 2的 每一特徵的寬度“X”係經選擇,以實質上與半導體元件特徵 之欲求臨界尺寸(例如界定閘極電極之空間的寬度)相關。 在一實施例中,寬度“X”位在1 0-1 〇〇nm的範圍内。線之間 的間隔“y”可以經選擇,以最佳化一頻率倍增計畫。根據本 發明之一實施例,一後續製造的間隙物罩幕的目標是在於 11 200905729 使得間隙物罩幕的間隙物線的寬度實質上等於圖案化 層3 02的每一特徵的寬度“X”。再者,後續形成的間隙 之間的間隔的目標係使其實質上等於每一間隙物區域 度。因此,在一實施例中,由於頻率將最終地被倍增 案化光阻層 3 02中的每個特徵之間的間隔“y”係約為 “X”的三倍,如第3 A圖所示。圖案化光阻層3 02的節 經選擇為約4,以為了最終地提供具有節距約2之間 線的間隙物罩幕。在一特定實施例中,1 93 nm微影被 產生圖案化光阻層3 02,其具有約45nm的特徵寬度以 13 5nm之特徵間的間隔。 對於圖案化光阻層3 02之特徵,其約3 : 1的間隔: 的比例可以藉由在曝光操作中將正型光阻層過度曝光 藉由在微影/顯影製程之後削減光阻層來達到。在一實 中,圖案化光阻層302是由193nm正型光阻組成,其 由使用電漿蝕刻化學而在顯影後被削減。雖然對於頻 增計晝,圖案化光阻層3 0 2中每一特徵的理想寬度是 化光阻層3 02之節距的1 /4,起初目標寬度必須稍微 點以補償用來將第一罩幕疊堆3 04圖案化的蝕刻製程 此,根據本發明之一實施例,圖案化光阻層3 0 2中每 線之起初寬度的目標係位於〇. 2 8 1 - 0.3 2 1乘以節距之~ 參照流程圖200之操作206以及相應的第3Β圖 由一蝕刻製程,將圖案化光阻層3 0 2之圖像轉移到第 幕疊堆304,以形成一犧牲罩幕310。用來轉移圖像的 製程可以是任何適於從圖案化光阻層302實質上轉移 光阻 物線 的寬 ,圖 數值 距係 隙物 用來 及約 寬度 ,或 施例 係藉 率倍 圖案 厚一 。因 一條 〇 ,藉 一罩 蝕刻 相同 12 200905729 圖像到第一罩幕疊堆304的製程。 第一罩幕疊堆304與因而犧牲罩幕310可以由任 於在一間隙物罩幕製程中作為犧牲罩幕的材料或材料 所組成。根據本發明之一實施例,第一罩幕疊堆3 04 單一材料組成,如第3 A圖所繪製之單斜線所示。由 材料組成之第一罩幕疊堆304的組成與厚度係適於以 刻製程來蝕刻,其中該蝕刻製程不會對圖案化光阻層 造成實質上影響。在一實施例中,由單一材料組成之 罩幕疊堆3 0 4的尺寸與蝕刻特性係經選擇以能經得起 化,其中在該圖案化期間該圖案化光阻層3 0 2係保持 上不受損。在一特定實施例中,圖案化光阻層3 02是 基材料組成,並且第一罩幕疊堆304是由從氮化矽、 矽與非晶矽或多晶矽所構成群組來選擇的材料組成。 特定實施例中,第一罩幕疊堆3 04實質上是由氮化 成,並且用來形成犧牲罩幕 3 1 0的蝕刻製程係使用 CH2F2與CHF3所構成群組來選擇的氣體。在另一特定 例中,第一罩幕疊堆3 04實質上是由氧化矽組成,並 來形成犧牲罩幕3 1 0的蝕刻製程係使用由從C4F8與 所構成群組來選擇的氣體。在另一特定實施例中,第 幕疊堆3 04實質上是由非晶矽或多晶矽組成,並且用 成犧牲罩幕3 1 0的蝕刻製程係使用由從Cl2與HBr所 群組來選擇的氣體。根據本發明之一實施例,由單一 組成之第一罩幕疊堆3 04的厚度係經選擇以在頻率倍 畫中能夠最佳化後續的間隙物罩幕形成。第一罩幕 何適 組合 是由 單一 一触 302 第一 圖案 實質 由碳 氧化 在一 矽組 由從 實施 且用 chf3 一罩 來形 構成 材料 增計 疊堆 13 200905729
3 0 4的厚度係足箱I 1小以避免後續形成之間隙物罩幕的間隙 物罩幕線塌陷, 北且足夠大以能夠控制間隙物罩幕線的臨 界尺寸β在^ 貫施例中,由單一材料組成之第一罩幕疊堆 3 04的厚度係位 办 ^ ^ 4.06-5.625乘以犧牲罩幕310的目標線 寬之範圍内。 根據本發明 又—替代性實施例,第一罩幕疊堆304是 由位在一第—星 ^ 層3〇4B上方的一第一硬罩幕層3〇4A組 f 1 成,如第3A圖# 纷製的兩層。因此’犧牲罩幕3 1 0是由 位在一犧牲罩暮 ’ ^
。乃310B上方的一犧牲硬罩幕 組成,如第3B 哽卓幂口P刀31〇A 圖所示。在一實施例中,犧牲 3 1 0 A與犧牲罩幕 罩幕部分 I。卩分310B係在兩個不同的蝕刻 用圖案化光阻層3〇 、作中利 "3〇2的圖像被圖案化。第—硬罜 可以由任何適於 層3〇4八 、U 一蝕刻製程來蝕刻的材料組由, 钱刻製程不會對阁电 ’ ’其中該 嘗對圖案化光阻層302造成實質上_ 實施例中,第1甚甘 Μ上t響。在— 硬罩幕層304Α的尺寸與蝕刻特 擇以能經得起一圖幸外制食 ^ ^ ^ ^ 「王係經選 化光阻層3 02係伴拄杳防L . ,α . 1该圖案 巾W待實質上不受損。在一特 第一罩幕層3〇4Rr甘 将疋實施例中, 皁綦層3〇4B(其位在第一硬罩幕層3〇4a下方 刻特性類似於圖幸介止 )是由蝕 茱化先阻層3〇2之蝕刻特性的材 因此,第一硬|葚 斗、,且成。 罩幕層304八係用來在後續的第—$ 304B蝕刻期間保存 單幕層 仔來自圖案化光阻層3〇2的圖 定實施例中,圖案化# 在〜特 茶化先阻層3〇2與第一罩幕層3 碳基材料組成,並 B是由 工且第一硬罩幕層3〇4a 氧化矽與非晶矽哎容B 足氮化矽、 次多阳矽所構成群組來選擇的材料組成。 14 200905729
在一特定實施例中,第一硬罩幕層304A實質上是由氮化 矽組成,並且用來相對於圖案化光阻層302與第一罩幕層 3 0 4 B選擇將第一硬罩幕層3 0 4 A圖案化的蝕刻製程係使用 由從CH2F2與CHF3所構成群組來選擇的氣體。在另一特 定實施例中,第一硬罩幕層3 04 A實質上是由氧化矽組成, 並且用來相對於圖案化光阻層3 02與第一罩幕層3 04 B選 擇將第一硬罩幕層 3 04A圖案化的蝕刻製程係使用由從 C4F8與CHF3所構成群組來選擇的氣體。在另一特定實施 例中,第一硬罩幕層 3 04 A實質上是由非晶矽或多晶矽組 成,並且用來相對於圖案化光阻層3 02與第一罩幕層3 04B 選擇將第一硬罩幕層304A圖案化的蝕刻製程係使用由從 Cl2與HBr所構成群組來選擇的氣體。第一硬罩幕層3 04 A 的厚度係足夠小以能夠相對於圖案化光阻層3 0 2進行高選 擇性蝕刻,並且足夠大以避免會不利地暴露出第一罩幕層 304B的針孔。在一實施例中,第一硬罩幕層304A的厚度 係位於2 0 - 5 0 n m之範圍内。 在第一罩幕疊堆3 04是由一第一硬罩幕層3 04A組成 (其中第一硬罩幕層304A位在一第一罩幕層304B上方)的 情況中,第一罩幕層304B可以由任何適於禁得起一受控 的蝕刻製程與一後續的間隙物罩幕形成製程的材料組成。 在一實施例中,第一罩幕層 3 0 4 B具有類似於圖案化光阻 層3 0 2的蝕刻特性。在一特定實施例中,圖案化光阻層3 0 2 與第一罩幕層 3 04B的厚度係經選擇,從而使在蝕刻第一 硬罩幕層304A後殘留之所有部分的圖案化光阻層3 02在 15 200905729 蝕刻第一罩幕層 3 0 4 B期間被去除。例如,根據本發明之 一實施例,圖案化光阻層3 0 2與第一罩幕層3 0 4 B兩者皆 實質上由碳原子組成。在一實施例中,第一罩幕層 304B 係由從使用碳氫前驅物分子的化學氣相沉積製程形成之 sp3 (類鑽石的)、sp2 (石墨的)與sp1 (熱解的)混合碳原子的混 合物所組成。這樣的膜在此技藝中被公知為非晶碳膜或 Advanced Patterning Film™(APF)。在一特定實施例中,第 一罩幕層304B是由這樣的非晶碳膜組成,並且藉由使用 由從〇2與N2的組合或CH4與N2與02的組合所構成群組 來選擇的氣體來蝕刻。在一特定實施例中,實質上所有的 圖案化光阻層302係利用與用來將第一罩幕層3 04B圖案 化的相同蝕刻操作被去除。第一罩幕層3 04B的厚度係足 夠小以避免後續形成之間隙物罩幕的間隙物罩幕線塌陷, 並且足夠大以能夠控制間隙物罩幕線的臨界尺寸。在一實 施例中,由第一硬罩幕層3 04A與第一罩幕層3 04B組成之 第一罩幕疊堆304的總厚度係位於4.06-5.625乘以犧牲罩 幕310的目標線寬之範圍内。 再參照第3B圖,第一罩幕疊堆304(顯示在第3A圖) 係被圖案化,以相對於第二罩幕疊堆3 0 6選擇形成犧牲罩 幕310。第二罩幕疊堆306是由位在一第二罩幕層306B上 方的一第二硬罩幕層306A組成,如第3B圖所示。第二硬 罩幕層306A可以具有任何適於保護第二罩幕層306B免於 用來形成犧牲罩幕3 1 0之蝕刻製程的性質。根據本發明之 一實施例,第一罩幕疊堆3 04是由單一材料組成,並且相 16
200905729 對於第二硬罩幕層 3 0 6 A被選擇性蝕刻。在一實施例 第一罩幕疊堆 304是由氮化矽組成,並且第二硬罩 3 0 6 A是由從氧化矽與非晶矽或多晶矽所構成群組來 的材料組成。在另一實施例中,第一罩幕疊堆3 04是 化矽組成,並且第二硬罩幕層306A是由從氮化矽與 矽或多晶矽所構成群組來選擇的材料組成。在另一實 中,第一罩幕疊堆3 04是由非晶矽或多晶矽組成,並 二硬罩幕層3 06 A是由從氮化矽與氧化矽所構成群組 擇的材料組成。根據本發明之一替代性實施例,第一 疊堆3 04是由一第一硬罩幕層3 04A與一第一罩幕層 組成。在一實施例中,第一罩幕層3 0 4 B是由非晶碳 成,該非晶碳膜係由從〇2與N2的組合或CH4與N2 : 的組合所構成群組來選擇的氣體來蝕刻,並且第二硬 層3 06 A是由從氮化矽、氧化矽與非晶矽或多晶矽所 群組來選擇的材料組成。第二硬罩幕層306A的厚度 夠小以能夠相對於第二罩幕層3 06B進行後續的高選 蝕刻,並且足夠大以避免會不利地暴露出第二罩幕層 於施加到第一罩幕疊堆3 04之蝕刻製程的針孔。在一 例中,第二硬罩幕層3 0 6 A的厚度係位於1 5 - 4 0 n m之 内。 參照流程圖200之操作208以及相應的第3C圖 間隙物層3 1 2係共形地被沉積在犧牲罩幕3 1 0上方以 二硬罩幕層3 0 6 A上方。間隙物層3 1 2是將會最終地 間隙物罩幕以用於頻率倍增計晝的材料源。 中, 幕層 選擇 由氧 非晶 施例 且第 來選 罩幕 3 04B 膜組 與〇2 罩幕 構成 係足 擇性 306B 實施 範圍 j * 及第 變成 17 200905729
間隙物層3 1 2可以由任何適於形成可靠罩幕以用於後 續蝕刻製程的材料組成。根據本發明之一實施例,間隙物 層3 1 2是由從氮化矽、氧化矽與非晶矽或多晶矽所構成群 組來選擇的材料組成。間隙物層3 1 2可以藉由任何適於在 犧牲罩幕3 1 0的側壁提供一共形層的製程來沉積,如第3 C 圖所示。在一實施例中,間隙物層3 1 2是藉由化學氣相沉 積(CVD)技術來沉積,其中該化學氣相沉積技術是從分子-有機CVD、低壓CVD、以及電漿增強CVD所構成群組來 選擇。間隙物層3 1 2的厚度可以經選擇以決定在後續形成 之間隙物罩幕中的特徵的寬度。因此,根據本發明之一實 施例,間隙物層3 1 2的厚度係實質上等於犧牲罩幕3 1 0之 特徵的寬度,如第3 C圖所示。雖然對於頻率倍增計畫, 間隙物層3 1 2的理想厚度是等於犧牲罩幕3 1 0之特徵的寬 度,起初的目標寬度必須稍微厚一點以補償用來將間隙物 層3 1 2圖案化之蝕刻製程。在一實施例中,間隙物層3 1 2 的厚度係約為1.06乘以犧牲罩幕3 1 0之特徵的寬度,亦即 1.0 6乘以在後續形成之間隙物罩幕中的線的欲求特徵寬 度。 再參照流程圖200之操作208以及相應的第3D圖, 蝕刻間隙物層3 1 2以提供間隙物罩幕3 1 4,並且暴露出犧 牲罩幕3 1 0之頂表面以及地二硬罩幕層3 0 6 A。間隙物罩幕 3 1 4的線係與犧牲罩幕3 1 0之特徵的側壁共形。因此,對 於犧牲罩幕3 1 0之每一條線,有來自間隙物罩幕3 1 4的兩 條線,如第3 D圖所示。 18 200905729
間隙物層3 1 2可以藉由任何適於提供良好控制之尺寸 的製程來蝕刻,以例如維持犧牲罩幕3 1 0之特徵尺寸的寬 度。根據本發明之一實施例,間隙物層3 1 2係被蝕刻而直 到間隙物罩幕3 1 4的線實質上與犧牲罩幕3 1 0的特徵相等 高度為止,如第3 D圖所示。在另一實施例中,間隙物罩 幕 3 1 4的線係比犧牲罩幕 3 1 0的特徵的頂表面稍微地下 凹,以為了確保間隙物層3 1 2之連續性在間隙物罩幕3 1 4 的線的上方及下方被中止。間隙物層3 1 2可以被蝕刻成從 而使間隙物罩幕3 1 4的間隙物線保持間隙物層3 1 2的原始 厚度的一實質部分。在一特定實施例中,間隙物罩幕314 之每一條線的頂表面的寬度係實質上等於間隙物罩幕3 1 4 與第二硬罩幕層306A之界面處的寬度,如第3D圖所示。 間隙物層3 1 2能夠以相對於犧牲罩幕3 1 0與第二硬罩 幕層3 0 6 A具有高蝕刻選擇性而被蝕刻,以形成間隙物罩 幕3 1 4 (第3 D圖)。在一特定實施例中,犧牲罩幕3 1 0為一 單層罩幕,並且希望的蝕刻選擇性是指相對於該單層而 言。在另一特定實施例中,犧牲罩幕3 1 0是一堆疊層,並 且希望的蝕刻選擇性是指相對於一犧牲硬罩幕部分而言, 或相對於第一硬罩幕層304A的材料而言。根據本發明之 一實施例,間隙物層3 1 2與間隙物罩幕3 1 4是由與犧牲罩 幕310之頂部及第二硬罩幕層306A的材料不同的材料組 成。在一實施例中,犧牲罩幕3 1 0之頂部是由氮化矽組成, 第二硬罩幕層 3 0 6 A是由氧化矽組成,並且間隙物層 3 1 2 是由非晶矽或多晶矽組成、以及藉由使用從Cl2或Br氣體 19 200905729 產生之電漿的乾式蝕刻製程被蝕刻以形成f 3 1 4。在另一實施例中,犧牲罩幕3 1 0之頂部是 成,第二硬罩幕層3 06A是由氮化矽組成,並 3 1 2是由非晶矽或多晶矽組成、以及藉由使用從 組合氣體產生之電漿的乾式蚀刻製程被蝕刻以 罩幕3 1 4。在另一實施例中,犧牲罩幕3 1 0之 晶矽或多晶矽組成,第二硬罩幕層3 0 6 A是由H 並且間隙物層3 1 2是由氧化矽組成、以及藉由 氣體產生之電漿的乾式蝕刻製程被蚀刻以形成 3 1 4。在另一實施例中,犧牲罩幕3 1 0之頂部是 多晶矽組成,第二硬罩幕層3 0 6 A是由氧化矽 間隙物層3 1 2是由氮化矽組成、以及藉由使用 體產生之電漿的乾式蝕刻製程被蝕刻以形成 3 1 4。在另一實施例中,犧牲罩幕3 1 0之頂部是 成,第二硬罩幕層3 06 A是由非晶矽或多晶矽 間隙物層3 12是由氮化矽組成、以及藉由使用 CH2F2組合氣體產生之電漿的乾式敍刻製程被 間隙物罩幕3 1 4。在另一實施例中,犧牲罩幕 是由氮化矽組成,第二硬罩幕層306A是由非 矽組成,並且間隙物層3 1 2是由氧化矽組成、 用從CHF3氣體產生之電漿的乾式蝕刻製程被 間隙物罩幕 3 1 4。在本發明之一特定實施例中 間隙物罩幕3 1 4之蝕刻製程係為在暴露出犧牲 頂表面與第二硬罩幕層3 0 6 A時之終點偵測形 3隙物罩幕 由氧化矽組 且間隙物層 :Cl2 M HBr 形成間隙物 頂部是由非 。化矽組成, 使用從C4F8 間隙物罩幕 由非晶矽或 組成,並且 從CH2F2氣 間隙物罩幕 由氧化矽組 組成,並且 從CHF3與 蝕刻以形成 3 1 0之頂部 晶珍或多晶 以及藉由使 蝕刻以形成 ,用來形成 罩幕3 1 0之 式。在一特 20 200905729 定實施例中,在終點偵測後係施加稍微過度蝕刻,以確保 間隙物罩幕3 1 4的線在犧牲罩幕3 1 0之特徵至特徵(即線至 線)為非連續。 參照流程圖2 0 0之操作2 1 0與相應的第3 E及3 E ’圖, 在間隙物罩幕3 1 4與犧牲罩幕3 2 0的暴露部分及第二硬罩 幕層3 0 6 A上方沉積一光阻疊堆3 2 0。在此實施例中,光阻 疊堆3 2 0通常在間隙物罩幕3 1 4被修整之前被沉積。在特 定實施例中,間隙物罩幕3 1 4之間隙物線係在犧牲罩幕3 1 0 之相鄰線之間(例如第3 D圖之相鄰的線)為非連續。然而, 間隙物罩幕3 1 4之間隙物線(其與犧牲罩幕3 1 0之相同線相 關)在犧牲罩幕3 1 0之每一條線的末端周圍保持連續,如第 3 E ’圖所繪製俯視圖中間隙物罩幕3 1 4的末端部分3 1 6所 示。吾人希望中止間隙物線對的連續性,以為了後續的半 導體元件製造。因此,根據本發明之一實施例,在將光阻 疊堆3 2 0圖案化之後,末端部分3 1 6從視窗3 3 0暴露出, 如第3 E ’圖所示。 再參照第3 E圖,光阻疊堆3 2 0可以具有一光阻層 324,該光阻層324係由任何與第3A圖中圖案化光阻層302 相關的材料組成。此外,光阻疊堆3 2 0可以在光阻層3 2 4 與間隙物罩幕 3 1 4之間包含一底部抗反射塗料(B ARC)層 322,以為光阻層324提供一平坦表面,如第3E圖所示。 在一實施例中,用來將光阻疊堆3 2 0圖案化之微影製程係 包括光阻層 324(其具有實質上平坦的表面)的曝光與顯 影。在一特定實施例中,BARC層為一具有有機機團之旋 21 200905729 塗式(s p i η - ο η)玻璃材料。在一替代性實施例中,光 320完全是由一光阻層組成。 光阻疊堆3 2 0可以藉由任何能夠提供光阻疊堆 平坦頂表面的製程來沉積。例如,根據本發明之一實 光阻疊堆320包含位在BARC層322上方的光阻層 並且光阻層3 24與BARC層3 22兩者皆藉由旋塗式 沉積。在另一實施例中,光阻疊堆3 2 0實質上包含 旋塗式製程來沉積之光阻層。用來沉積該BARC層 一光阻層(在此情況下光阻疊堆320不包含B ARC } 塗式製程可能產生足夠使間隙物罩幕中薄特徵或線 力量。例如,旋塗式製程可能產生足夠使間隙物罩 之單獨的線倒塌的力量。因此,根據本發明之一實 在間隙物修整製程期間,犧牲罩幕3 1 0係被保留以 間隙物罩幕3 1 4之個別間隙物線提供結構性支撐。 定實施例中,藉由保留住犧牲罩幕3 1 0,在用來沉 疊堆3 2 0的旋塗式製程中,沒有間隙物罩幕之間隙 倒塌。 光阻疊堆320可以藉由任何與第3A圖中圖案 層3 0 2之圖案化相關的微影製程來圖案化。在一 中,光阻疊堆3 2 0係被圖案化以形成一視窗3 3 0, 3 3 0暴露間隙物罩幕3 1 4之末端部分3 1 6。視窗3 3 0 可以是任何適於修整間隙物罩幕3 1 4的尺寸。區域 以暴露間隙物罩幕3 1 4之至少整個末端部分3 1 6。 發明之一實施例,視窗3 3 0之尺寸係經選擇,以亦 阻疊堆 320予 施例, 324, 製程來 一藉由 322或 i )的旋 倒塌的 幕3 14 施例, 為了對 在一特 積光阻 物線會 化光阻 實施例 該視窗 之大小 33 0可 根據本 暴露一 22
200905729 部分之犧牲罩幕3 1 0。因此,在一實施例中,視窗 光阻疊堆3 2 0中之尺寸與位置係經選擇,以容納任 化及修整製程的微幅偏差。 參照流程圖2 0 0之操作2 1 2與相應的第3 Ε ’圖 物罩幕3 1 4係被修整以形成一經修整的間隙物罩幕 間隙物罩幕3 1 4可以藉由任何能夠去除間隙物罩幕 暴露部分的蝕刻製程來修整。如圖所示,末端部分 對於光阻疊堆320與第二硬罩幕層306Α具有選擇 去除。相對於犧牲罩幕3 1 0之暴露部分具有蝕刻選 是必要的。然而,根據一實施例,修整蝕刻製程係 犧牲罩幕310之暴露部分具有選擇性,如第3F圖 因此,任何在第3 C與3 D圖中所描述用來蝕刻間 3 1 2之材料與蝕刻製程的組合可以被用來形成經修 隙物罩幕340。 參照流程圖2 0 0之操作2 1 4與相應的第3 G與 光阻疊堆3 2 0與犧牲罩幕3 1 0係被去除。因此,根 明之一實施例,犧牲罩幕3 1 0係被保留以在間隙物3 修整期間提供結構性支撐,以形成經修整的間隙 340。然而,一旦形成了間隙物罩幕,犧牲罩幕3 1 0 去除,以完成頻率倍增罩幕製程。 光阻疊堆3 2 0能夠在與犧牲罩幕3 1 0之去除相 程操作被去除,或在一先前的製程操作被去除。在 例中,光阻疊堆是由含碳物種組成,並且在使用C 氣體之先前的濕式或乾式灰化操作中被去除。犧 3 30在 何圖案 ,間隙 340 = 314之 3 16相 性而被 擇性不 相對於 所示。 隙物層 整的間 3G’ 圖, 據本發 L 幕 3 14 物罩幕 可以被 同的製 一實施 2與Ν 2 牲罩幕 23 200905729 3 1 〇可以藉由任何相對於經 _ φ ^ κ 疋的間隙物罩幕340與第二 硬罩幕層3〇6Α具有高選擇性 之_ ψ 擇陡的技術來去除。根捸本發明 之實施例,犧牲罩幕3 i 〇是 —製程接早層組成,並且在一單 裟程刼作中相對於經修整 間隙物罩幕340具有選擇性 被去除。在一實施例令, # aaH ^ 4 ^ a . υ豎的間隙物罩幕340是由 成,並且犧牲罩幕31〇實質/^福疋由氧化石夕組 使用從熱Η3Ρ0買上疋由氮化矽組成、以及藉由 3?〇4濕式姓刻或q. 擇之單一蝕刻# π + 戈SlCoNl蝕刻所構成群組來選 隙物罩幕34〇 a 另實施例令’經修整的間 306A是由_疋由非晶石夕或多晶石夕組成,第二硬罩幕詹 矽組成、以及辑ώ 7 牲罩幕310實質上是由氧化 蝕刻所構成_ ^ 從氣氣酸水溶液濕式餘刻或SiCoNi 丨伸力乂砰組來選楼夕留 施例中,經佟螫 刻操作被去除。在另一實 彳> 整的間隙物罩1 硬罩幕層306A θ Α ~ 4〇是由氧化矽組成,第二 υ〇Α疋由氮化矽细士 上是由非晶矽或多曰 、,並且犧牲罩I 310實質 夂夕晶石夕組成、以s i # 刻與CF"02電漿姓刻所構成:由使用從Cl2電漿钱 被去除。在另-實施例中,瘦心“擇之單-敍刻操作 氮化矽組成,第二硬罩幕::間:、物罩幕340是由 犧牲罩幕31〇實胃13 八是由氧化矽組成,並且 使用…J::CF:::二 之單—麵刻操作被去除。在另電聚姓刻所構成群組來選擇 物罩幕340是由氮化石夕組 實施例中,經修整的間隙 晶石夕或多晶碎組成,並且犧第二硬罩幕層3〇6A是由非 罩幕31G實質上U氧化石夕 24 200905729 組成、以及藉由使用從氫氟. 蝕刻所構成群組來選擇之。。—'谷液濕式蝕刻或SiC〇Ni 施例中,經修整的間隙物㈣被去除。在另一實 硬罩幕層3〇6A是由非 :由氧切組成’第二 ⑴實質上是由氮…成”…成,並且犧牲罩幕 被去除。 、果選擇之早一蝕刻操作 在—替代性實施例中,犧 罩幕部八^ 罩幕31〇是由位在一椹从 卓秦4刀上方的一犧牲硬罩 犧牲 圖之替代性實 刀、及成’如同關於第3 甘U性貫施例中所述。 罩幕部分是由從氮化⑦、氧胃㊈例中’犧牲硬 群组來、$ 夕/、非晶矽或多晶矽所構& 群組來選擇的材料組成 7構成 組成(例如所描述之關於第一罩幕幕/…非晶碳材料 枓)。因*,根據本發明之一實絲如 〕非曰曰碳材 整的間隙物革暮& 實施例,則述用於相對於經修 贫物罩幕3 40與第二硬罩篡 犧牲罩幕310的相同材層3〇6八來選擇性去除 經修整的間隙物罩I 3 4 〇 Α第;;=程係被用來相對於 去除犧牲硬罩幕部分。—堆幕層3G6A來選擇性 分下方的犧牲罩幕部分能夠:與2罩幕的犧牲硬罩幕部 相同的餘刻摔作實暂, 與用來去除犧牲硬罩幕部分 』栋作實質上被去除。或去,雨* 作來去除犧牲罩幕八 / 而要一第二蝕刻操 山刀°在一實施例中,犠Μ罢蒽邶八I 由非晶碳組成,並且利用具有犧牲罩幕^疋 其中該電“包含從G輿N冑激之乾式㈣來去除, 組合所構成群έ也2與Ν2的組合或ch4、ν2與〇2的 所構成群組來選擇的氣體。 25 200905729 參照流程圖200之操作216與相應的第3H圖,將經 修整的間隙物罩幕3 4 0的圖像轉移到第二罩幕疊堆3 0 6, 以在半導體層3 0 8上方形成蝕刻罩幕3 7 0。在一實施例中, 第二罩幕疊堆3 06實質上是由單一材料組成,並且在單一 蝕刻操作中被蝕刻以形成蝕刻罩幕3 7 0。在一特定實施例 中,第二罩幕疊堆3 06實質上是由從氮化矽、氧化矽與非 晶矽或多晶矽所構成群組來選擇的單一材料組成。在一替 代性實施例中,第二罩幕疊堆3 0 6是由位在第二罩幕層 306B上方的第二硬罩幕層306A組成,如關於第3B圖所 示及其相關钦述。在一實施例中,餘刻罩幕3 7 0是由一硬 罩幕部分370A與一罩幕部分370B組成,如第3H圖所示。 第二硬罩幕層306A以及因而硬罩幕部分370A之材料組成 與厚度的實施例係被描述在關於第3 B圖的說明中。根據 本發明之一實施例,經修整的間隙物罩幕3 4 0的圖像係在 不同於最終用來形成罩幕部分3 70B之圖案化操作的蝕刻 操作中被轉移到第二硬罩幕層3 0 6 A。在一實施例中,第二 硬罩幕層3 0 6 A實質上是由非晶矽或多晶矽組成,並且藉 由使用 CHF3氣體的乾式蝕刻來蝕刻以形成硬罩幕部分 3 70A。在另一實施例中,第二硬罩幕層3 06A實質上是由 氧化矽組成,並且藉由使用由從CH2F2及Cl2與HBr組合 所構成群組來選擇的氣體的乾式蝕刻來蝕刻,以形成硬罩 幕部分3 70A。在另一實施例中,第二硬罩幕層3 06A實質 上是由氧化矽組成,並且藉由使用由從C4F8、Cl2與HBr 所構成群組來選擇的氣體的乾式蝕刻來蝕刻,以形成硬罩 26 200905729 幕部分3 7 0 A。 根據本發明之一實施例,經修整的間隙物罩幕3 4 0的 圖像接著在一第二蝕刻操作中從硬罩幕部分3 7 0 Α被轉移 到罩幕部分370B。第二罩幕層306B與因而蝕刻罩幕370 之罩幕部分3 7 Ο B可以由任何適於實質上經得起用來後續 地將半導體層3 0 8圖案化之蝕刻製程的材料組成。在一實 施例中,第二罩幕層3 06B是由非晶碳材料組成,例如關 於第一罩幕層 3 04B之組成的實施例所敘述的非晶碳材 料。在一特定實施例中,第二罩幕層 3 0 6 B與因而蝕刻罩 幕370之罩幕部分370B的厚度係位於3.125-6.875乘以蝕 刻罩幕3 7 0之每一條線的寬度的範圍内。第二罩幕層3 0 6 B 可以藉由任何得以對蝕刻罩幕3 70之每一條線維持實質上 垂直剖面的蝕刻製程被蝕刻,以形成罩幕部分3 70B,如第 3 Η圖所示。在一實施例中,第二罩幕層3 0 6 B是由非晶碳 組成,並且藉由使用一電漿之乾式蝕刻來去除,其中該電 漿係包含從〇2與Ν2的組合或CH4、Ν2與02的組合所構 成群組來選擇的氣體。 透過各種實施例,本文已經敘述了製造蝕刻罩幕3 7 0 的一或多種方法,其中該蝕刻罩幕3 7 0具有可以倍增犧牲 罩幕之線頻率的線。然後,蝕刻罩幕3 7 0可以被用來將一 半導體層3 0 8圖案化,例如積體電路的元件製造。根據本 發明之一實施例,蝕刻罩幕3 7 0具有一實質上由非晶碳材 料組成之罩幕部分3 70Β。在用來將半導體層3 08圖案化的 触刻製程期間,非晶破材料變為鈍化(passivated),並且因 27 200905729 此得以在半導體層3 0 8之整個蝕刻過程中保留其圖像 寸。雖然間隙物罩幕3 4 0具有將半導體層3 0 8圖案化 望的尺寸,間隙物罩幕3 4 0之材料可能不適於經得起 導體層的精確圖像轉移(亦即其在蝕刻製程期間可能 化)。根據本發明之一實施例,經修整的間隙物罩幕的 在被轉移到半導體層之前,該圖像係先被轉移到包含 碳材料的層中,如同關於第3 G與3 Η圖所敘述。 半導體層308可以是任何希望用於元件製造或任 他半導體結構製造而需要倍增頻率罩幕的層。例如, 本發明之一實施例,半導體層3 0 8包含任何適於被圖 成一陣列清楚界定之半導體結構的材料。在一實施例 半導體層3 08是由IV族為主的材料或III-V材料組成 外,半導體層3 0 8可以包含任何適於被圖案化成一陣 楚界定之半導體結構的形態。在一實施例中,半導體肩 的形態係由從非晶態、單晶態與多晶態所構成群組 擇。在一實施例中,半導體層3 0 8包含電荷載子摻雜 子。半導體層308可以進一步地位在一基板上方。基 以由任何適於經得起一製程的材料組成。在一實施例 基板是由撓性塑膠薄片組成。基板可以進一步由適於 起一製程的材料組成,並且半導體層可以適當地設置 板上方。在一實施例中,基板是由IV族為主的材料海 例如結晶石夕、鍺或石夕/鍺。在另一實施例中,基板是由 材料組成。基板也可以包含一絕緣層。在一實施例中 緣層是由從氧化矽、氮化矽、氮氧化矽與高k介電層 與尺 所希 到半 會劣 圖像 非晶 何其 根據 案化 中, ‘。此 列清 '308 中選 質原 板可 中, 經得 在基 L成, III-V ,絕 所構 28 200905729 成群組來選擇的材料組成。 應當瞭解,本發明之實施例不受限於間隙物罩幕的製 造,其中該間隙物罩幕在圍繞犧牲罩幕中線的末端處被修 整。根據本發明之另一實施例,間隙物罩幕圍繞除了線末 段以外結構的部分係在結構性支撐的犧牲罩幕存在時被修 整。第4A-B圖係繪示根據本發明一實施例之間隙物罩幕 製造過程的俯視圖。
參照第4 A圖,在一間隙物罩幕4 1 4與一犧牲罩幕4 1 0 上方形成一圖案化光阻層420。間隙物罩幕414的末端區 域4 1 6 (其圍繞犧牲罩幕4 1 0的非線性特徵)從圖案化光阻 層420之視窗430暴露出。此俯視圖對應第3E’圖,並且 顯示了與第3 E ’圖所繪示線性末端不同的間隙物罩幕3 1 4 的區域。參照第4 B圖,間隙物罩幕4 1 4係被修整以形成 經修整的間隙物罩幕440。此外,圖案化光阻層420與犧 牲罩幕4 1 0被去除。根據本發明之一實施例,犧牲罩幕4 1 0 被保留作為在間隙物罩幕4 1 4的非線性部分被修整時之結 構性支撐。此製程致使經修整的間隙物罩幕4 4 0形成為間 隙物末端4 8 0相隔距離係大於經修整的間隙物罩幕4 4 0的 線的間隔,如第4 B圖所示。在一實施例中,可以進行後 續的每個間隙物末端4 8 0之接觸形成,而不會有以單一接 觸來不利地接觸經修整的間隙物罩幕4 4 0之超過一個間隙 物線的危險。 在形成一間隙物罩幕時,吾人希望不僅保留間隙物層 與犧牲罩幕之側壁共形的部分。區塊保留區域可以在間隙 29 200905729 物罩幕形成期間被保留纟。這樣的 來形成接觸塾、變更尺寸的線'或朝:::行區進域:夠被用 法從沿著犧牲核心周圍的間隙物來 广線(其無 ^ ς A ^ 〜战),例如T交5嫂 :圖係緣示根據本發明一實施例之間隙物罩幕製J I括區塊保留操作)之一連串操作的戴面圖。 ^ 別共:第5A圖’-間隙物層512被沉積成與犧牲罩幕 間隙物層5 1 2係為將最終地變成間 用於頻率拉说 > * ’、物罩幕以 圖j 增計畫(其包括區塊保留操作)的材料源。第5a *應前述的第3C圖。在用來將間隙物層5i2圖案化' 形成間隙物罩幕的钱刻製程之前’在間隙物層Η : ^且圖案化-光阻f 590。根據本發明之_實施例,光: 二59〇破圖案化是為了保留一部分之間隙物層512 ㈣分之間隙物層512會在間隙物罩幕形成蝕刻操作中被 去除。在-實施例中,間隙物層512係對犧牲罩幕51〇在 光阻層590之沉積與圖案化期間提供結構性支撑。光阻層 590可以由任何材料組成’並且可以藉由任何關於第汀^ 3E圖之光阻疊堆32〇的技術來圖案化。 參照第5B @,間隙㈣512被姓刻以形&間隙物罩 幕514。間隙物罩幕514包括—區塊保留部分592,區塊保 留部分592會被保留住是因為光阻層59〇的保護。光阻層 59〇接著被去除,並且間隙物罩幕514在一修整製程中(其 包括在整個修整製程中保留犧牲罩幕51〇)被修整。此外i 根據本發明之一實施例,區塊保留部分592也在修整製裎 中被保留住。參照第5C圖,去除犧牲罩幕5丨〇,僅留下了 30 200905729 具有區塊保留部分5 9 2之經修整的間隙物罩幕5 4 0。參照 第5 D圖,將具有區塊保留部分5 9 2之經修整的間隙物罩 幕5 4 0的圖像轉移到一第二罩幕疊堆5 0 6,以形成一蝕刻 罩幕 5 7 0。根據本發明之一實施例,由於區塊保留製程, 蝕刻罩幕570包含有寬度大於蝕刻罩幕570中最薄線的寬 度的至少一特徵,如第5 D圖所示。修整製程與區塊保留 製程的先後可以不必取決於順序。根據本發明之一替代性 實施例,修整製程係在區塊保留製程之前執行。 能夠一起使用區塊保留製程與間隙物罩幕製程,以在 半導體層中最終地形成用於形成接觸的區域。第6Α-Β圖 係繪示根據本發明一實施例之間隙物罩幕製造方法(包括 區塊保留製程)的俯視圖。 參照第6 Α圖,一具有區塊保留區域6 9 2的間隙物罩 幕614被形成在一犧牲罩幕610周圍,如同關於第5B圖 之敘述。參照第6 B圖,間隙物罩幕6 14被修整以形成具 有區塊保留區域6 9 2之經修整的間隙物罩幕6 4 0,以及接 著犧牲罩幕610被去除。區塊保留區域692可以提供更大 的接觸所被形成於其上的區域。根據本發明之一實施例, 一部分之間隙物層沒有在一間隙物罩幕形成蝕刻操作中被 去除,而是在一區塊保留操作中被保留住。 本發明已經揭示用以製造半導體罩幕的方法。在一實 施例中,一半導體疊堆係被提供,該半導體疊堆具有一犧 牲罩幕與一間隙物罩幕。犧牲罩幕包含一系列的線,並且 間隙物罩幕具有鄰接該系列線之側壁的多個間隙物線。在 31 200905729 修整間隙物罩幕後,犧牲罩幕被去除以提供一經修整的間 隙物罩幕。在一實施例中,間隙物罩幕是藉由在半導體疊 堆上方沉積與犧牲罩幕共形的一間隙物層來形成。間隙物 層被蝕刻,以提供間隙物罩幕(其具有鄰接犧牲罩幕之該系 列線之側壁的多個間隙物線)並且將犧牲罩幕的頂表面暴 露出。進而,在間隙物罩幕與犧牲罩幕上方沉積且圖案化 一光阻層,以暴露一部分的間隙物罩幕。間隙物罩幕的暴 露部分係被蝕刻,以修整間隙物罩幕。最後,犧牲罩幕被 去除,僅留下經修整的間隙物罩幕。在一特定實施例中, 經修整的間隙物罩幕可以倍增犧牲罩幕之該系列線的頻 率。 【圖式簡單說明】 本發明之實施例係透過附圖中的實例來說明,其不構 成限制。
第1 Α-C圖係繪示根據習知技術之一傳統半導體微影 製程的截面圖。 第2圖為一流程圖,其係繪示根據本發明一實施例之 間隙物罩幕製造過程的示範性方法。 第3 A-Η圖係繪示根據本發明一實施例在應用於半導 體疊堆時,表示第2圖流程圖之一連串製程的截面圖與俯 視圖。 第4A-B圖係繪示根據本發明一實施例之間隙物罩幕 製造過程的俯視圖。 32 200905729 第5A-D圖係繪示根據本發明一實施例之間隙物罩幕 製造過程之示範性方法的截面圖。 第6A-B圖係繪示根據本發明一實施例之間隙物罩幕 製造過程之示範性方法的俯視圖。
C 1 主要元件符號說明 102 半 導 體 疊 堆 104 光阻 層 106 罩 幕 108 圖案 化光阻層 110 圖 案 化 光 阻 層 200 流 程 圖 202 提 供 半 導 體 疊 堆 204 在 半 導 體 疊 堆 上 沉 積 且 圖案化第一 -光阻層 206 在 半 導 體 疊 堆 中 形 成 犧 牲罩幕 208 形 成 鄰 接 犧 牲 罩 幕 的 間 隙物罩幕 2 10 在 犧 牲 罩 幕 與 .間 隙 :物 罩幕上沉積 且圖案化第二光阻 層 2 12 修 整 間 隙 物 罩 幕 2 14 去 除 犧 牲 罩 幕 216 將 經 修 整 的 間 隙 物 罩 幕 的圖像轉移到下方的層 300 半 導 體 疊 堆 302 圖案 化光阻層 304 第 — 罩 幕 疊 堆 304A 第- -硬罩幕層 304B 第一罩幕層 3 06 A 第二硬罩幕層 3 08 半導體層 306 第二罩幕疊堆 306B 第二罩幕層 310 犧牲罩幕 33 200905729 3 1 0A 犧牲硬罩幕部分 3 1 0B 3 12 間隙物層 3 14 3 16 末端部分 320 322 BARC 層 324 330 視窗 340 370 蝕刻罩幕 370A 370B 罩幕部分 4 10 414 間隙物罩 幕 416 420 圖案化光 阻 層 430 440 經修整的 間 隙 物 罩 幕 480 506 第二罩幕 疊 堆 5 10 512 間隙物層 514 540 經修整的 間 隙 物 罩 幕 570 590 光阻層 592 610 犧牲罩幕 614 640 經修整的 間 隙 物 罩 幕 692 犧牲罩幕部分 間隙物罩幕 光阻疊堆 光阻層 經修整的間隙物罩幕 硬罩幕部分 犧牲罩幕 末端區域 視窗 間隙物末端 犧牲罩幕 間隙物罩幕 蝕刻罩幕 區塊保留部分 間隙物罩幕 區塊保留區域
C 34
Claims (1)
- 200905729 十、申請專利範圍: 1. 一種用以製造一半導體罩幕的方法,其包含: 提供一半導體疊堆,該半導體疊堆具有一犧牲 與一間隙物罩幕,其中該犧牲罩幕包含一系列的線 且其中該間隙物罩幕包含鄰接該系列線之側壁的 間隙物線;以及 在修整該間隙物罩幕後,去除該犧牲罩幕。 2. 如申請專利範圍第1項所述之方法,其中該些間隙 之頻率是該犧牲罩幕之該系列線之頻率的兩倍。 3. 如申請專利範圍第2項所述之方法,其中該犧牲罩 該系列線的節距係約4。 4. 一種用以製造一半導體罩幕的方法,其包含: 提供一半導體疊堆,該半導體疊堆具有一犧 幕,該犧牲罩幕是由一系列的線組成; 在該半導體疊堆上方沉積一與該犧牲罩幕共 間隙物層; 蝕刻該間隙物層,以提供一間隙物罩幕且暴露 犧牲罩幕之頂表面,該間隙物罩幕包含鄰接該犧牲 之該系列線之側壁的多個間隙物線; 在該間隙物罩幕與該犧牲罩幕上方沉積且圖 一光阻層,以暴露一部分之該間隙物罩幕; 罩幕 ,並 多個 物線 幕之 牲罩 形的 出該 罩幕 案化 35 200905729 蝕刻該間隙物罩幕之暴露部分,以修整該間隙物罩 幕;以及 在蝕刻該間隙物罩幕後,去除該犧牲罩幕,以提供 一經修整的間隙物罩幕。 5 ·如申請專利範圍第4項所述之方法,其中該間隙物層實 質上是由矽組成,其中該犧牲罩幕之頂部實質上是由從 氮化矽與氧化矽所構成群組來選擇的材料組成,並且其 中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包含 使用藉由一氣體的乾式蝕刻製程,該氣體係從 Cl2與 HBr所構成群組來選擇。 6.如申請專利範圍第5項所述之方法,其中去除該犧牲罩 幕以提供該經修整的間隙物罩幕的步驟係包含使用蝕 刻製程,該蝕刻製程係從熱η3ρο4濕式蝕刻、氫氟酸水 溶液濕式蝕刻、與SiCoNi蝕刻所構成群組來選擇。 7 ·如申請專利範圍第4項所述之方法,其中該間隙物層實 質上是由氧化矽組成,其中該犧牲罩幕之頂部實質上是 由從氮化矽與矽所構成群組來選擇的材料組成,並且其 中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包含 使用藉由一氣體的乾式蝕刻製程,該氣體係從C4F8與 CHF3所構成群組來選擇。 36200905729 8.如申請專利範圍第7項所述之方法,其中去除 幕以提供該經修整的間隙物罩幕的步驟係包 刻製程,該蝕刻製程係從熱 h3po4濕式触刻 蚀刻、Cl2電漿蝕刻、與CF4/02電漿蝕刻所構 選擇。 9.如申請專利範圍第4項所述之方法,其中該間 質上是由氮化矽組成,其中該犧牲罩幕之頂部 由從氧化矽與矽所構成群組來選擇的材料組月 中蝕刻該間隙物層以提供該間隙物罩幕的步 使用藉由一氣體的乾式蝕刻製程,該氣體係 與CHF3所構成群組來選擇。 1 0.如申請專利範圍第9項所述之方法,其中去除 幕以提供該經修整的間隙物罩幕的步驟係包 刻製程,該蝕刻製程係從氫氟酸水溶液濕 SiCoNi触亥ij 、Cl2電漿蝕刻、與CF4/02電漿 成群組來選擇。 1 1.如申請專利範圍第4項所述之方法,其中該些 之頻率是該犧牲罩幕之該系列線之頻率的兩招 12.如申請專利範圍第11項所述之方法,其中該 之該系列線的節距係約4。 該犧牲罩 含使用# 、SiCoNi 成群組來 隙物層實 實質上是 乞,並且其 驟係包含 從 ch2f2 該犧牲罩 含使用蚀 式蝕刻、 蝕刻所構 間隙物線 犧牲罩幕 37 200905729 1 3 .如申請專利範圍第4項所述之方法,更包含: 將該經修整的間隙物罩幕的圖像轉移到一罩幕疊 堆,其中該罩幕疊堆是在該半導體疊堆中而位於該犧牲 罩幕下方,並且其中該罩幕疊堆包含一非晶碳膜層。 14. 一種用以製造一半導體罩幕的方法,其包含: 提供一半導體疊堆,該半導體疊堆具有一罩幕層; 沉積且圖案化一第一光阻層,以在該罩幕層上方形 成一圖像; 蝕刻該罩幕層以形成一具有該圖像之犧牲罩幕,其 中該犧牲罩幕包含一系列的線; 在該半導體疊堆上方沉積一與該犧牲罩幕共形的 間隙物層; 沉積且圖案化一第二光阻層,以在該間隙物層上方 形成一區塊保留罩幕; 蝕刻該間隙物層以提供一包含多個間隙物區域與 多個區塊保留區域之間隙物罩幕,其中該些間隙物區域 係鄰接該犧牲罩幕之該系列線之側壁,並且其中蝕刻該 間隙物層的步驟係暴露該犧牲罩幕之頂表面; 在該間隙物罩幕與該犧牲罩幕上方沉積且圖案化 一第三光阻層,以暴露該間隙物罩幕之該些間隙物區域 的至少一部分; 蝕刻該間隙物罩幕之該些間隙物區域的暴露部 38 200905729 分,以修整該間隙物罩幕;以及 去除該犧牲罩幕。 1 5 .如申請專利範圍第1 4項所述之方法,其中該間隙物層 實質上是由矽組成,其中該犧牲罩幕之頂部實質上是由 從氮化矽與氧化矽所構成群組來選擇的材料組成,並且 其中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包 含使用藉由一氣體的乾式蝕刻製程,該氣體係從Cl2與 HBr所構成群組來選擇。 1 6.如申請專利範圍第1 5項所述之方法,其中去除該犧牲 罩幕的步驟係包含使用蝕刻製程,該蝕刻製程係從熱 H3P〇4濕式蝕刻、氫氟酸水溶液濕式蝕刻、與 SiCoNi 蝕刻所構成群組來選擇。 1 7 ·如申請專利範圍第1 4項所述之方法,其中該間隙物層 實質上是由氧化矽組成,其中該犧牲罩幕之頂部實質上 是由從氮化矽與矽所構成群組來選擇的材料組成,並且 其中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包 含使用藉由一氣體的乾式蝕刻製程,該氣體係從C4F8 與CHF3所構成群組來選擇。 1 8 .如申請專利範圍第1 7項所述之方法,其中去除該犧牲 罩幕的步驟係包含使用蝕刻製程,該蝕刻製程係從熱 39 200905729 H3P〇4濕式钱刻、SiCoNi姓刻、Cl2電漿钱刻、與CF4/0: 電漿蚀刻所構成群組來選擇。 19. 一種用以製造一半導體罩幕的方法,其包含: 提供一半導體疊堆,該半導體疊堆具有一罩幕層; 沉積且圖案化一第一光阻層,以在該罩幕層上方形 成一圖像; 蝕刻該罩幕層以形成一具有該圖像之犧牲罩幕,其 中該犧牲罩幕包含一系列的線; 在該半導體疊堆上方沉積一與該犧牲罩幕共形的 間隙物層; 在該間隙物層與該犧牲罩幕上方沉積且圖案化一 第二光阻層,以暴露該間隙物層之該些間隙物區域的至 少一部分; 蝕刻該間隙物層之該些間隙物區域的暴露部分,以 形成一經修整的間隙物層; 沉積且圖案化一第三光阻層,以在該經修整的間隙 物層上方形成一區塊保留罩幕; 蝕刻該經修整的間隙物層,以提供一包含多個間隙 物區域與多個區塊保留區域的間隙物罩幕,其中該些間 隙物區域係鄰接該犧牲罩幕之該系列線之側壁,並且其 中蝕刻該經修整之間隙物層的步驟係暴露該犧牲罩幕 之頂表面;以及 去除該犧牲罩幕。 40 200905729 2 0.如申請專利範圍第1 9項所述之方法,其中該間隙物層 實質上是由矽組成,其中該犧牲罩幕之頂部實質上是由 從氮化矽與氧化矽所構成群組來選擇的材料組成,並且 其中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包 含使用藉由一氣體的乾式蝕刻製程,該氣體係從Cl2與 HBr所構成群組來選擇。 21.如申請專利範圍第20項所述之方法,其中去除該犧牲 罩幕的步驟係包含使用蝕刻製程,該蝕刻製程係從熱 H3P〇4濕式蝕刻、氫氟酸水溶液濕式蝕刻、與 SiCoNi 蝕刻所構成群組來選擇。2 2.如申請專利範圍第1 9項所述之方法,其中該間隙物層 實質上是由氧化矽組成,其中該犧牲罩幕之頂部實質上 是由從氮化矽與矽所構成群組來選擇的材料組成,並且 其中蝕刻該間隙物層以提供該間隙物罩幕的步驟係包 含使用藉由一氣體的乾式蝕刻製程,該氣體係從C4F8 與CHF3所構成群組來選擇。 23 .如申請專利範圍第22項所述之方法,其中去除該犧牲 罩幕的步驟係包含使用蝕刻製程,該蝕刻製程係從熱 H3P〇4濕式触刻、SiCoNi钱刻、Cl2電漿#刻、與CF4/02 電漿蝕刻所構成群組來選擇。 41 200905729 24. 如申請專利範圍第1 9項所述之方法,其中該間隙物 實質上是由氮化矽組成,其中該犧牲罩幕之頂部實質 是由從氧化矽與矽所構成群組來選擇的材料組成,並 其中蝕刻該間隙物層以提供該間隙物罩幕的步驟係 含使用藉由一氣體的乾式蝕刻製程,該氣體係從CH: 與CHF3所構成群組來選擇。 25. 如申請專利範圍第24項所述之方法,其中去除該犧 罩幕的步驟係包含使用蝕刻製程,該蝕刻製程係從氫 酸水溶液濕式蝕刻、SiCoNi蝕刻、Cl2電漿蝕刻、 CF4/02電漿钱刻所構成群組來選擇。 層 上 且 包 F2 牲 氟 與 42
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US93285807P | 2007-06-01 | 2007-06-01 | |
US11/875,250 US7807578B2 (en) | 2007-06-01 | 2007-10-19 | Frequency doubling using spacer mask |
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Families Citing this family (505)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8337950B2 (en) * | 2007-06-19 | 2012-12-25 | Applied Materials, Inc. | Method for depositing boron-rich films for lithographic mask applications |
US8148269B2 (en) * | 2008-04-04 | 2012-04-03 | Applied Materials, Inc. | Boron nitride and boron-nitride derived materials deposition method |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8110466B2 (en) | 2009-10-27 | 2012-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cross OD FinFET patterning |
US9953885B2 (en) * | 2009-10-27 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI shape near fin bottom of Si fin in bulk FinFET |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
FR2960657B1 (fr) * | 2010-06-01 | 2013-02-22 | Commissariat Energie Atomique | Procede de lithographie a dedoublement de pas |
US9130058B2 (en) | 2010-07-26 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming crown active regions for FinFETs |
US9117764B2 (en) * | 2010-08-27 | 2015-08-25 | Tokyo Electron Limited | Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
US8901016B2 (en) | 2010-12-28 | 2014-12-02 | Asm Japan K.K. | Method of forming metal oxide hardmask |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8309462B1 (en) | 2011-09-29 | 2012-11-13 | Sandisk Technologies Inc. | Double spacer quadruple patterning with self-connected hook-up |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
WO2013062755A1 (en) * | 2011-10-24 | 2013-05-02 | Rolith, Inc. | Lithography with reduced feature pitch using rotating mask techniques |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
JP5881569B2 (ja) * | 2012-08-29 | 2016-03-09 | 株式会社東芝 | パターン形成方法 |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
CN103779191B (zh) * | 2012-10-26 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US8623770B1 (en) | 2013-02-21 | 2014-01-07 | HGST Netherlands B.V. | Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US9275873B2 (en) | 2013-09-26 | 2016-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Masking process and structures formed thereby |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9416447B2 (en) | 2014-02-07 | 2016-08-16 | HGST Netherlands B.V. | Method for line density multiplication using block copolymers and sequential infiltration synthesis |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9735256B2 (en) * | 2014-10-17 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
TWI638385B (zh) * | 2015-03-31 | 2018-10-11 | 聯華電子股份有限公司 | 半導體裝置的圖案化結構及其製作方法 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
CN107437497B (zh) * | 2016-05-27 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10629435B2 (en) * | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
CN106847821B (zh) * | 2017-03-07 | 2018-09-14 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
CN110010447B (zh) * | 2018-01-05 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US10796947B2 (en) * | 2018-12-12 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing a semiconductor device |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
TW202104632A (zh) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
CN113795908A (zh) * | 2019-04-08 | 2021-12-14 | 应用材料公司 | 用于修改光刻胶轮廓和调整临界尺寸的方法 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
TW202125596A (zh) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成氮化釩層之方法以及包括該氮化釩層之結構 |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
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Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03257825A (ja) * | 1990-03-07 | 1991-11-18 | Toshiba Corp | 半導体装置の製造方法 |
US5328810A (en) * | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
JP3050965B2 (ja) * | 1991-09-27 | 2000-06-12 | 沖電気工業株式会社 | レジストパタンの形成方法 |
JP3317582B2 (ja) * | 1994-06-01 | 2002-08-26 | 菱電セミコンダクタシステムエンジニアリング株式会社 | 微細パターンの形成方法 |
KR100354440B1 (ko) * | 2000-12-04 | 2002-09-28 | 삼성전자 주식회사 | 반도체 장치의 패턴 형성 방법 |
DE10137575A1 (de) * | 2001-07-31 | 2003-02-27 | Infineon Technologies Ag | Verfahren zur Erzeugung einer Maske sowie Verfahren zur Herstellung einer Halbleitervorrichtung |
US6924191B2 (en) * | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
US20040018738A1 (en) * | 2002-07-22 | 2004-01-29 | Wei Liu | Method for fabricating a notch gate structure of a field effect transistor |
US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
DE102004034572B4 (de) * | 2004-07-17 | 2008-02-28 | Infineon Technologies Ag | Verfahren zum Herstellen einer Struktur auf der Oberfläche eines Substrats |
US7151040B2 (en) * | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
US7910288B2 (en) * | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7115525B2 (en) * | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US7611944B2 (en) * | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
KR100674970B1 (ko) * | 2005-04-21 | 2007-01-26 | 삼성전자주식회사 | 이중 스페이서들을 이용한 미세 피치의 패턴 형성 방법 |
US7560390B2 (en) * | 2005-06-02 | 2009-07-14 | Micron Technology, Inc. | Multiple spacer steps for pitch multiplication |
US7396781B2 (en) * | 2005-06-09 | 2008-07-08 | Micron Technology, Inc. | Method and apparatus for adjusting feature size and position |
US7776744B2 (en) * | 2005-09-01 | 2010-08-17 | Micron Technology, Inc. | Pitch multiplication spacers and methods of forming the same |
US7902074B2 (en) * | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
KR100752674B1 (ko) * | 2006-10-17 | 2007-08-29 | 삼성전자주식회사 | 미세 피치의 하드마스크 패턴 형성 방법 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
US7846849B2 (en) * | 2007-06-01 | 2010-12-07 | Applied Materials, Inc. | Frequency tripling using spacer mask having interposed regions |
US20090017631A1 (en) * | 2007-06-01 | 2009-01-15 | Bencher Christopher D | Self-aligned pillar patterning using multiple spacer masks |
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2007
- 2007-10-19 US US11/875,250 patent/US7807578B2/en not_active Expired - Fee Related
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2008
- 2008-05-27 JP JP2008137862A patent/JP5385551B2/ja not_active Expired - Fee Related
- 2008-05-28 TW TW97119767A patent/TWI471903B/zh not_active IP Right Cessation
- 2008-05-29 KR KR1020080050315A patent/KR100991295B1/ko not_active IP Right Cessation
- 2008-05-29 EP EP08157222A patent/EP1998363A3/en not_active Withdrawn
- 2008-05-30 CN CN201310416003.9A patent/CN103488041A/zh active Pending
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TWI471903B (zh) | 2015-02-01 |
JP5385551B2 (ja) | 2014-01-08 |
EP1998363A2 (en) | 2008-12-03 |
US7807578B2 (en) | 2010-10-05 |
US20080299776A1 (en) | 2008-12-04 |
JP2009004769A (ja) | 2009-01-08 |
KR20080106063A (ko) | 2008-12-04 |
EP1998363A3 (en) | 2010-02-10 |
US20110008969A1 (en) | 2011-01-13 |
CN103488041A (zh) | 2014-01-01 |
KR100991295B1 (ko) | 2010-11-01 |
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