TW200613868A - Display device and method for producing thereof - Google Patents

Display device and method for producing thereof

Info

Publication number
TW200613868A
TW200613868A TW094120660A TW94120660A TW200613868A TW 200613868 A TW200613868 A TW 200613868A TW 094120660 A TW094120660 A TW 094120660A TW 94120660 A TW94120660 A TW 94120660A TW 200613868 A TW200613868 A TW 200613868A
Authority
TW
Taiwan
Prior art keywords
film
display device
aluminum alloy
transparent conductive
substrate
Prior art date
Application number
TW094120660A
Other languages
English (en)
Other versions
TWI277817B (en
Inventor
Hiroshi Gotoh
Toshihiro Kugimiya
Katsufumi Tomihisa
Junichi Nakai
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of TW200613868A publication Critical patent/TW200613868A/zh
Application granted granted Critical
Publication of TWI277817B publication Critical patent/TWI277817B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW094120660A 2004-07-06 2005-06-21 Display device and method for production thereof TWI277817B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004199576A JP4541787B2 (ja) 2004-07-06 2004-07-06 表示デバイス

Publications (2)

Publication Number Publication Date
TW200613868A true TW200613868A (en) 2006-05-01
TWI277817B TWI277817B (en) 2007-04-01

Family

ID=35540945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120660A TWI277817B (en) 2004-07-06 2005-06-21 Display device and method for production thereof

Country Status (6)

Country Link
US (1) US7365810B2 (zh)
JP (1) JP4541787B2 (zh)
KR (1) KR100657099B1 (zh)
CN (1) CN100561319C (zh)
SG (1) SG118411A1 (zh)
TW (1) TWI277817B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193045B2 (en) 2007-05-31 2012-06-05 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
TWI413260B (zh) * 2008-07-31 2013-10-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI585498B (zh) * 2006-05-16 2017-06-01 半導體能源研究所股份有限公司 液晶顯示裝置和半導體裝置

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US7507903B2 (en) * 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
JP4541787B2 (ja) 2004-07-06 2010-09-08 株式会社神戸製鋼所 表示デバイス
US8061562B2 (en) 2004-10-12 2011-11-22 S.C. Johnson & Son, Inc. Compact spray device
EP1807322B1 (en) 2004-10-12 2008-01-09 S.C.Johnson & Son, Inc Automatic spray device
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP4579709B2 (ja) 2005-02-15 2010-11-10 株式会社神戸製鋼所 Ａｌ−Ｎｉ−希土類元素合金スパッタリングターゲット
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP2006316339A (ja) * 2005-04-12 2006-11-24 Kobe Steel Ltd Ａｌ系スパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
KR100729043B1 (ko) * 2005-09-14 2007-06-14 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그의 제조방법
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
CA2582312C (en) * 2006-05-05 2014-05-13 Sulzer Metco Ag A method for the manufacture of a coating
US7781767B2 (en) * 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP5214858B2 (ja) * 2006-06-22 2013-06-19 三菱電機株式会社 Ｔｆｔアレイ基板及びその製造方法
US7825415B2 (en) * 2006-06-30 2010-11-02 Lg Display Co., Ltd. Transistor of organic light-emitting, method for fabricating the transistor, and organic light-emitting device including the transistor
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
KR101043508B1 (ko) 2006-10-13 2011-06-23 가부시키가이샤 고베 세이코쇼 박막 트랜지스터 기판 및 표시 디바이스
KR100752388B1 (ko) * 2006-11-01 2007-08-27 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
CN100463193C (zh) * 2006-11-03 2009-02-18 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
JP2008127623A (ja) * 2006-11-20 2008-06-05 Kobelco Kaken:Kk Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP4377906B2 (ja) * 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP4170367B2 (ja) 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP4355743B2 (ja) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
US7754352B2 (en) * 2007-04-20 2010-07-13 Alliance For Sustainable Energy, Llc Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof
US8462508B2 (en) * 2007-04-30 2013-06-11 Hewlett-Packard Development Company, L.P. Heat sink with surface-formed vapor chamber base
JP2009004518A (ja) * 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP2009008770A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5143649B2 (ja) * 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
JP5007246B2 (ja) * 2008-01-31 2012-08-22 三菱電機株式会社 有機電界発光型表示装置及びその製造方法
JP5231282B2 (ja) * 2008-02-22 2013-07-10 株式会社神戸製鋼所 タッチパネルセンサー
JP5139134B2 (ja) 2008-03-31 2013-02-06 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｃｕ系Ａｌ基合金スパッタリングターゲットおよびその製造方法
WO2009123217A1 (ja) * 2008-03-31 2009-10-08 株式会社神戸製鋼所 表示装置、その製造方法およびスパッタリングターゲット
JP5432550B2 (ja) * 2008-03-31 2014-03-05 株式会社コベルコ科研 Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
KR20100127290A (ko) * 2008-04-23 2010-12-03 가부시키가이샤 고베 세이코쇼 표시 장치용 Ａｌ 합금막, 표시 장치 및 스퍼터링 타깃
CN102077323A (zh) * 2008-07-03 2011-05-25 株式会社神户制钢所 配线结构、薄膜晶体管基板及其制造方法、以及显示装置
JP5393071B2 (ja) * 2008-07-16 2014-01-22 三菱電機株式会社 電子デバイス、及びその製造方法、並びに電子機器
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
KR101499227B1 (ko) 2008-08-20 2015-03-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TWI606595B (zh) * 2008-11-07 2017-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
JP5275836B2 (ja) * 2009-02-06 2013-08-28 株式会社ジャパンディスプレイウェスト 液晶表示装置および液晶表示装置の製造方法
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KR101156428B1 (ko) * 2009-06-01 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 소자
JP5238619B2 (ja) * 2009-06-12 2013-07-17 日本放送協会 磁気光学式空間光変調器およびその製造方法
CN102473732B (zh) 2009-07-27 2015-09-16 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
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JP2012027159A (ja) 2010-07-21 2012-02-09 Kobe Steel Ltd 表示装置
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CN103959470B (zh) * 2012-01-17 2016-08-24 株式会社日本有机雷特显示器 薄膜晶体管阵列装置以及使用它的el显示装置
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Publication number Priority date Publication date Assignee Title
US10509271B2 (en) 2006-05-16 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a semiconductor film having a channel formation region overlapping with a conductive film in a floating state
TWI585498B (zh) * 2006-05-16 2017-06-01 半導體能源研究所股份有限公司 液晶顯示裝置和半導體裝置
US9709861B2 (en) 2006-05-16 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US10001678B2 (en) 2006-05-16 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US11061285B2 (en) 2006-05-16 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a dogleg-like shaped pixel electrode in a plane view having a plurality of dogleg-like shaped openings and semiconductor device
US11106096B2 (en) 2006-05-16 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US11435626B2 (en) 2006-05-16 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US11726371B2 (en) 2006-05-16 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. FFS-mode liquid crystal display device comprising a top-gate transistor and an auxiliary wiring connected to a common electrode in a pixel portion
US8193045B2 (en) 2007-05-31 2012-06-05 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
TWI413260B (zh) * 2008-07-31 2013-10-21 Semiconductor Energy Lab 半導體裝置及其製造方法
US8729544B2 (en) 2008-07-31 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10937897B2 (en) 2008-07-31 2021-03-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12074210B2 (en) 2008-07-31 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
SG118411A1 (en) 2006-01-27
CN1719320A (zh) 2006-01-11
US7365810B2 (en) 2008-04-29
US20060007366A1 (en) 2006-01-12
JP2006023388A (ja) 2006-01-26
KR20060049854A (ko) 2006-05-19
CN100561319C (zh) 2009-11-18
KR100657099B1 (ko) 2006-12-13
TWI277817B (en) 2007-04-01
JP4541787B2 (ja) 2010-09-08

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