TW200629567A - Thin film transistor substrate and its production method, transparent conductive film laminated substrate with Al wiring and its production method and oxide transparent conductive film material - Google Patents

Thin film transistor substrate and its production method, transparent conductive film laminated substrate with Al wiring and its production method and oxide transparent conductive film material

Info

Publication number
TW200629567A
TW200629567A TW095100474A TW95100474A TW200629567A TW 200629567 A TW200629567 A TW 200629567A TW 095100474 A TW095100474 A TW 095100474A TW 95100474 A TW95100474 A TW 95100474A TW 200629567 A TW200629567 A TW 200629567A
Authority
TW
Taiwan
Prior art keywords
transparent conductive
wiring
conductive film
production method
substrate
Prior art date
Application number
TW095100474A
Other languages
Chinese (zh)
Other versions
TWI360884B (en
Inventor
Kazuyoshi Inoue
Masato Matsubara
Nobuo Tanaka
Shigeo Matsuzaki
Kouki Yano
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005005569A external-priority patent/JP2006196616A/en
Priority claimed from JP2005005637A external-priority patent/JP4700352B2/en
Priority claimed from JP2005005499A external-priority patent/JP2006195077A/en
Priority claimed from JP2005017748A external-priority patent/JP2006210033A/en
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW200629567A publication Critical patent/TW200629567A/en
Application granted granted Critical
Publication of TWI360884B publication Critical patent/TWI360884B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes

Abstract

A method of producing a laminate circuit board provided with an Al wiring is simplified by using a transparent conductive material containing specific metals as a transparent conductive film. A transparent conductive film laminate circuit board provided with an Al wiring, comprising a transparent substrate, an Al wiring provided on the transparent substrate and consisting of Al or Al alloy, and a conductive oxide mainly containing indium oxide-zinc oxide-tin oxide, characterized in that the board contains a transparent conductive film directly joined with the Al wiring. The direct joining of the Al wiring with the transparent conductive film with no barrier metal between them can simplify a production process. The use of a specific-component conductive oxide can reduce a contact resistance to a low level despite the direct joining with the Al wiring. TFT substrate and production method thereof, and transparent conductive film laminate substrate provided with al wiring and production method therefor, and transparent conductive film laminate circuit board provided with al wiring and production met
TW095100474A 2005-01-12 2006-01-05 Thin film transistor and its production method and TWI360884B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005005569A JP2006196616A (en) 2005-01-12 2005-01-12 OXIDE TRANSPARENT CONDUCTIVE FILM MATERIAL, Al TRANSPARENT CONDUCTIVE LAMINATED CIRCUIT BOARD EQUIPPED WITH Al INTERCONNECT LINE, AND ITS MANUFACTURING METHOD
JP2005005637A JP4700352B2 (en) 2005-01-12 2005-01-12 TFT substrate and manufacturing method thereof
JP2005005499A JP2006195077A (en) 2005-01-12 2005-01-12 TRANSPARENT CONDUCTIVE FILM LAYERED SUBSTRATE EQUIPPED WITH Al WIRING, AND ITS MANUFACTURING METHOD
JP2005017748A JP2006210033A (en) 2005-01-26 2005-01-26 Laminated circuit board having al wiring and coated with transparent conductive film, and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200629567A true TW200629567A (en) 2006-08-16
TWI360884B TWI360884B (en) 2012-03-21

Family

ID=36677514

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100474A TWI360884B (en) 2005-01-12 2006-01-05 Thin film transistor and its production method and

Country Status (4)

Country Link
KR (2) KR101335794B1 (en)
CN (1) CN101880859B (en)
TW (1) TWI360884B (en)
WO (1) WO2006075483A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450008B (en) * 2007-12-05 2014-08-21 Semiconductor Energy Lab Display device and method for manufacturing the same
TWI456322B (en) * 2007-05-23 2014-10-11 Hitachi Chemical Co Ltd Thin film and reel body for anisotropic conductive connection

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2924723B1 (en) * 2007-12-11 2010-12-17 Centre Nat Rech Scient SOLID SUPPORT COATED WITH AT LEAST ONE METAL FILM AND AT LEAST ONE TRANSPARENT OXIDE LAYER AND CONDUCTOR FOR SPR DETECTION AND / OR ELECTROCHEMICAL METHOD
KR101497425B1 (en) 2008-08-28 2015-03-03 삼성디스플레이 주식회사 Liquid crystal display and method of manufacturing the same
KR102004398B1 (en) 2012-07-24 2019-07-29 삼성디스플레이 주식회사 Display device and method of manufacturing the same
JP6677058B2 (en) * 2016-03-04 2020-04-08 住友金属鉱山株式会社 Sn-Zn-O-based oxide sintered body and method for producing the same
JP6159867B1 (en) * 2016-12-22 2017-07-05 Ｊｘ金属株式会社 Transparent conductive film forming target, transparent conductive film forming target manufacturing method, and transparent conductive film manufacturing method
JP2018199861A (en) * 2017-05-25 2018-12-20 日立金属株式会社 Oxide target material and method for producing the same
CN109546006B (en) * 2018-12-17 2020-09-08 武汉华星光电半导体显示技术有限公司 Flexible OLED display panel and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6280861B1 (en) * 1996-05-29 2001-08-28 Idemitsu Kosan Co., Ltd. Organic EL device
JPH10178195A (en) * 1996-12-18 1998-06-30 Canon Inc Photovoltaic element
EP2610229A3 (en) * 1998-08-31 2015-02-18 Idemitsu Kosan Co., Ltd. Transparent electroconductive glass coated with transparent electroconductive film containing IZTO
JP2000330134A (en) * 1999-03-16 2000-11-30 Furontekku:Kk Thin film transistor substrate and liquid crystal display device
JP2003059939A (en) * 2001-08-08 2003-02-28 Advanced Display Inc Thin film transistor array substrate and production method therefor
JP3940385B2 (en) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 Display device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456322B (en) * 2007-05-23 2014-10-11 Hitachi Chemical Co Ltd Thin film and reel body for anisotropic conductive connection
TWI450008B (en) * 2007-12-05 2014-08-21 Semiconductor Energy Lab Display device and method for manufacturing the same
US8878184B2 (en) 2007-12-05 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same

Also Published As

Publication number Publication date
WO2006075483A1 (en) 2006-07-20
KR20130038962A (en) 2013-04-18
TWI360884B (en) 2012-03-21
KR20070104549A (en) 2007-10-26
KR101351198B1 (en) 2014-01-14
CN101880859A (en) 2010-11-10
KR101335794B1 (en) 2013-12-02
CN101880859B (en) 2013-03-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees