TW200739968A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
TW200739968A
TW200739968A TW096105560A TW96105560A TW200739968A TW 200739968 A TW200739968 A TW 200739968A TW 096105560 A TW096105560 A TW 096105560A TW 96105560 A TW96105560 A TW 96105560A TW 200739968 A TW200739968 A TW 200739968A
Authority
TW
Taiwan
Prior art keywords
light
semiconductor layer
compound semiconductor
emitting diode
extracting surface
Prior art date
Application number
TW096105560A
Other languages
Chinese (zh)
Other versions
TWI376039B (en
Inventor
Kyousuke Masuya
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200739968A publication Critical patent/TW200739968A/en
Application granted granted Critical
Publication of TWI376039B publication Critical patent/TWI376039B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

A light-emitting diode (10) has a main light-extracting surface and includes a compound semiconductor layer (13) including semiconductor layers (130 to 135), a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part, a transparent substrate (14) joined to the compound semiconductor layer, and first and second electrodes (15, 16) of opposite polarities formed on the main light-extracting surface on the side opposite the transparent substrate. The second electrode is formed at a position on the portion of the compound semiconductor layer exposed by removing the semiconductor layers (132 to 134) and has the periphery thereof enclosed with the semiconductor layers. The main light-extracting surface has an external shape having the largest width of 0.8 mm or more.
TW096105560A 2006-02-14 2007-02-14 Light-emitting diode TWI376039B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006036169A JP5032033B2 (en) 2006-02-14 2006-02-14 Light emitting diode

Publications (2)

Publication Number Publication Date
TW200739968A true TW200739968A (en) 2007-10-16
TWI376039B TWI376039B (en) 2012-11-01

Family

ID=38497700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105560A TWI376039B (en) 2006-02-14 2007-02-14 Light-emitting diode

Country Status (4)

Country Link
JP (1) JP5032033B2 (en)
KR (1) KR100992496B1 (en)
CN (1) CN101490858B (en)
TW (1) TWI376039B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729598B2 (en) 2010-02-08 2014-05-20 Showa Denko K.K. Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205047B2 (en) * 2007-12-18 2013-06-05 ローム株式会社 Semiconductor light emitting device
JP5276959B2 (en) 2008-11-19 2013-08-28 昭和電工株式会社 LIGHT EMITTING DIODE, ITS MANUFACTURING METHOD, AND LAMP
KR101100684B1 (en) * 2009-07-15 2012-01-03 주식회사 에피밸리 Iii nitride semiconductor light emitting device
JP2013120936A (en) * 2011-12-07 2013-06-17 Ultratech Inc Ganled laser anneal with reduced pattern effect
JP6352068B2 (en) * 2014-06-20 2018-07-04 日本オクラロ株式会社 Optical transceiver
KR102306671B1 (en) * 2015-06-16 2021-09-29 삼성전자주식회사 Light emitting diode package
CN105742446B (en) 2016-04-29 2018-09-04 京东方科技集团股份有限公司 Light-emitting component and preparation method thereof
CN107482098B (en) * 2017-09-20 2023-05-09 南昌大学 Thin film LED chip structure
US10985022B2 (en) * 2018-10-26 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures having interfacial layers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP2003243709A (en) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd Semiconductor light emitting element
JP3896027B2 (en) * 2002-04-17 2007-03-22 シャープ株式会社 Nitride-based semiconductor light-emitting device and method for manufacturing the same
JP2004128321A (en) * 2002-10-04 2004-04-22 Matsushita Electric Works Ltd Semiconductor light emitting device
JP3953070B2 (en) * 2005-03-01 2007-08-01 松下電工株式会社 Semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8729598B2 (en) 2010-02-08 2014-05-20 Showa Denko K.K. Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp
TWI447956B (en) * 2010-02-08 2014-08-01 Showa Denko Kk Light-emitting diode, production method thereof and light-emitting diode lamp

Also Published As

Publication number Publication date
CN101490858A (en) 2009-07-22
JP2007220709A (en) 2007-08-30
KR20080091391A (en) 2008-10-10
CN101490858B (en) 2011-06-08
TWI376039B (en) 2012-11-01
JP5032033B2 (en) 2012-09-26
KR100992496B1 (en) 2010-11-08

Similar Documents

Publication Publication Date Title
WO2007094476A8 (en) Light-emitting diode
TW200739968A (en) Light-emitting diode
TW200729543A (en) Light emitting device and method of forming the same
TW200721906A (en) Area light emitting device
TW200610200A (en) Positive electrode for semiconductor light-emitting device
TW200735436A (en) Organic light emitting transistor element, its manufacturing method, and light emitting display device
TW200620705A (en) Semiconductor light emitting device
TW200629590A (en) Light emitting diode and method of the same
TW200642526A (en) Light-emitting device
ATE541328T1 (en) ELECTROLUMINescent ARRANGEMENT WITH IMPROVED LIGHT OUTPUT
TW200717757A (en) Light emitting diode package structure
TW200737549A (en) Gallium nitride-based compound semiconductor light-emitting device
WO2007096565A3 (en) Organic light-emitting device and use of a transparent electroconductive layer in an organic light-emitting device
TW200620708A (en) Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device
TW200717843A (en) Light-emitting element with high-light-extracting-efficiency
TW200706063A (en) Organic electroluminescent light source
TW200620704A (en) Nitride-based compound semiconductor light emitting device
TW200618355A (en) Semiconductor light-emitting device and its manufacturing method
TW200744226A (en) Light emitting device
TW200717863A (en) Gallium nitride-based compound semiconductor light-emitting device
TW200740275A (en) Light emitting device and electronic device
TW200637041A (en) Nitride semiconductor light-emitting device and method for fabrication thereof
TW200739948A (en) Gallium nitride-based compound semiconductor light-emitting device
TW200742109A (en) Light emitting diode structure
TW200731846A (en) Light-emitting element and display device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees