SK286829B6 - Spôsob rezania monokryštálu a zariadenie na vykonávanie tohto spôsobu - Google Patents

Spôsob rezania monokryštálu a zariadenie na vykonávanie tohto spôsobu Download PDF

Info

Publication number
SK286829B6
SK286829B6 SK1493-2003A SK14932003A SK286829B6 SK 286829 B6 SK286829 B6 SK 286829B6 SK 14932003 A SK14932003 A SK 14932003A SK 286829 B6 SK286829 B6 SK 286829B6
Authority
SK
Slovakia
Prior art keywords
single crystal
cutting
plane
orientation
angle
Prior art date
Application number
SK1493-2003A
Other languages
English (en)
Slovak (sk)
Other versions
SK14932003A3 (sk
Inventor
Ralf Hammer
Ralf Gruszynsky
Andr Kleinwechter
Tilo Flade
Original Assignee
Freiberger Compound Materials Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Materials Gmbh filed Critical Freiberger Compound Materials Gmbh
Publication of SK14932003A3 publication Critical patent/SK14932003A3/sk
Publication of SK286829B6 publication Critical patent/SK286829B6/sk

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0088Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G01N23/20016Goniometers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SK1493-2003A 2001-06-13 2002-06-11 Spôsob rezania monokryštálu a zariadenie na vykonávanie tohto spôsobu SK286829B6 (sk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10128630A DE10128630A1 (de) 2001-06-13 2001-06-13 Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche sowie Vorrichtung und Verfahren zum Trennen eines Einkristalls in einer Trennmaschine
PCT/EP2002/006407 WO2002100619A1 (de) 2001-06-13 2002-06-11 Vorrichtung und verfahren zur bestimmung der orientierung einer kristallografischen ebene relativ zu einer kristalloberfläche sowie vorrichtung und verfahren zum trennen eines einkristalls in einer trennmaschine

Publications (2)

Publication Number Publication Date
SK14932003A3 SK14932003A3 (sk) 2004-06-08
SK286829B6 true SK286829B6 (sk) 2009-06-05

Family

ID=7688120

Family Applications (1)

Application Number Title Priority Date Filing Date
SK1493-2003A SK286829B6 (sk) 2001-06-13 2002-06-11 Spôsob rezania monokryštálu a zariadenie na vykonávanie tohto spôsobu

Country Status (11)

Country Link
US (1) US6923171B2 (cs)
EP (2) EP1568457B1 (cs)
JP (2) JP4716652B2 (cs)
CN (2) CN100569475C (cs)
AT (1) ATE369956T1 (cs)
CZ (1) CZ304828B6 (cs)
DE (3) DE10128630A1 (cs)
RU (1) RU2296671C2 (cs)
SK (1) SK286829B6 (cs)
TW (1) TWI224670B (cs)
WO (1) WO2002100619A1 (cs)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005109951A1 (en) * 2004-05-05 2005-11-17 Deka Products Limited Partnership Angular discrimination of acoustical or radio signals
EP2275241B1 (de) 2005-08-25 2012-10-17 Freiberger Compound Materials GmbH Drahtsäge und Verfahren zum Trennen eines Werkstücks mittels Drahtsägen
DE102005040343A1 (de) 2005-08-25 2007-03-01 Freiberger Compound Materials Gmbh Verfahren, Vorrichtung und Slurry zum Drahtsägen
JP5415414B2 (ja) 2007-06-25 2014-02-12 サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド 単結晶体の結晶方位を再配向する方法
DE102008028213A1 (de) * 2008-06-06 2009-12-10 Gebr. Schmid Gmbh & Co. Verfahren zum Befestigen eines Silizium-Blocks an einem Träger dafür und entsprechende Anordnung
JP5007706B2 (ja) * 2008-06-30 2012-08-22 信越半導体株式会社 ワークの切断方法
KR100995877B1 (ko) * 2008-07-23 2010-11-22 한국기계연구원 투과전자현미경의 고니오미터를 이용한 이웃하는 결정립의결정학적 방위관계 측정장치 및 그에 의한 결정립계 특성규명 방법
CN101486231B (zh) * 2009-01-22 2011-12-07 四川大学 黄铜矿类负单轴晶体制备红外非线性光学元件的定向切割方法
CN101486232B (zh) * 2009-01-22 2011-09-07 四川大学 黄铜矿类正单轴晶体制备红外非线性光学元件的定向切割方法
CN101733848B (zh) * 2009-12-29 2012-01-18 西北工业大学 定向切割晶体任意晶面的简便方法
DE102010007459B4 (de) * 2010-02-10 2012-01-19 Siltronic Ag Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Kristall aus Halbleitermaterial
CN101994157A (zh) * 2010-03-22 2011-03-30 浙江星宇电子科技有限公司 一种开单晶1*0参考面的方法
CN102152410A (zh) * 2010-12-23 2011-08-17 万向硅峰电子股份有限公司 一种旋转单晶棒调整晶向偏移的切割方法
JP5678653B2 (ja) * 2010-12-28 2015-03-04 三菱化学株式会社 六方晶系半導体板状結晶の製造方法
EP2520401A1 (en) * 2011-05-05 2012-11-07 Meyer Burger AG Method for fixing a single-crystal workpiece to be treated on a processing device
CN103503119B (zh) * 2011-06-02 2016-10-19 住友电气工业株式会社 碳化硅基板的制造方法
CN102490278B (zh) * 2011-11-30 2014-07-16 峨嵋半导体材料研究所 线切割晶体激光仪定向切割方法
KR101360906B1 (ko) 2012-11-16 2014-02-11 한국표준과학연구원 고분해능 x-선 로킹 커브 측정을 이용한 단결정 웨이퍼의 면방위 측정 방법
KR101449572B1 (ko) * 2013-03-25 2014-10-13 한국생산기술연구원 리프트-업 스윙을 구현하는 와이어 쏘
JP6132621B2 (ja) * 2013-03-29 2017-05-24 Sumco Techxiv株式会社 半導体単結晶インゴットのスライス方法
CN105684125A (zh) * 2013-09-24 2016-06-15 硅电子股份公司 半导体晶片以及制造该半导体晶片的方法
US9682495B2 (en) * 2013-09-30 2017-06-20 Gtat Corporation Method and apparatus for processing sapphire
JP6459524B2 (ja) * 2015-01-08 2019-01-30 株式会社ジェイテクト 複合研削盤および研削方法
CN104985709B (zh) * 2015-06-16 2017-01-11 浙江海纳半导体有限公司 调整单晶棒晶向的方法及测量方法
JP6610026B2 (ja) * 2015-06-23 2019-11-27 三星ダイヤモンド工業株式会社 スクライブ装置
JP6272801B2 (ja) * 2015-07-27 2018-01-31 信越半導体株式会社 ワークホルダー及びワークの切断方法
JP6349290B2 (ja) * 2015-09-03 2018-06-27 信越半導体株式会社 単結晶ウェーハの表裏判定方法
CN105269696B (zh) * 2015-10-30 2017-04-05 江苏吉星新材料有限公司 一种蓝宝石晶体的复合定向方法
WO2017091945A1 (en) * 2015-11-30 2017-06-08 Rhodia Operations Wafering process for water based slurries
CN105842263A (zh) * 2016-03-18 2016-08-10 中锗科技有限公司 一种偏晶向太阳能锗单晶定向仪及其检测方法
JP6690983B2 (ja) * 2016-04-11 2020-04-28 株式会社ディスコ ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法
JP6222393B1 (ja) * 2017-03-21 2017-11-01 信越半導体株式会社 インゴットの切断方法
CN108312370B (zh) * 2017-12-20 2020-05-01 天通控股股份有限公司 一种基于水平传感器定位晶体的定向加工方法
JP6923067B2 (ja) * 2018-02-27 2021-08-18 株式会社Sumco 半導体単結晶インゴットのスライス方法
CN108621316B (zh) * 2018-05-03 2020-02-18 大连理工大学 一种易潮解光学晶体的水溶解辅助精密高效切割方法
DE102018221922A1 (de) * 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium
JP7148437B2 (ja) * 2019-03-01 2022-10-05 信越半導体株式会社 ワークの切断加工方法及びワークの切断加工装置
EP4024036A4 (en) * 2019-08-30 2023-09-13 National Institute Of Advanced Industrial Science and Technology METHOD FOR COMPUTING THE ORIENTATION DISTRIBUTION, APPARATUS FOR ANALYZING THE ORIENTATION DISTRIBUTION AND PROGRAM FOR ANALYZING THE ORIENTATION DISTRIBUTION
CN111745305B (zh) * 2020-05-23 2022-03-04 山东大学 一种实现金刚石单晶衬底表面取向的方法
CN112590032B (zh) * 2020-12-03 2022-12-02 天津市环智新能源技术有限公司 一种太阳能硅片及其粗糙度控制方法
CN113787636B (zh) * 2021-07-09 2022-05-27 麦斯克电子材料股份有限公司 一种用于12寸半导体晶圆的手动粘棒方法
CN117415966A (zh) * 2023-11-16 2024-01-19 深圳平湖实验室 碳化硅晶体的定向治具、定向方法和切割方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
JPS5562742A (en) * 1978-11-02 1980-05-12 Toshiba Corp Method of cutting monocrystal
DE3305695A1 (de) * 1983-02-18 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum zerteilen von halbleitermaterial
JPS60197361A (ja) * 1984-03-19 1985-10-05 Fujitsu Ltd ワイヤ・スライシング方法
EP0242489B1 (de) * 1986-04-17 1991-07-10 Maschinenfabrik Meyer & Burger AG Verfahren zum Trennen eines Stabes in Teilstücke, Trennschleifmaschine zur Durchführung dieses Verfahrens und Verwendung dieser Trennschleifmaschine
JPH06103674B2 (ja) * 1987-06-19 1994-12-14 住友電気工業株式会社 半導体単結晶インゴツトの角度調整法と装置
JPH11162909A (ja) * 1987-07-14 1999-06-18 Kyushu Electron Metal Co Ltd 半導体ウエーハの製造方法
JPH07118473B2 (ja) * 1987-07-14 1995-12-18 九州電子金属株式会社 半導体ウエ−ハの製造方法
JPH02255304A (ja) * 1989-03-29 1990-10-16 Sumitomo Electric Ind Ltd 半導体ウェーハのスライス装置及び方法
JPH0310760A (ja) 1989-06-09 1991-01-18 Nippon Spindle Mfg Co Ltd 結晶質脆性材料切断用ワイヤソー
JPH0671639A (ja) * 1992-08-26 1994-03-15 Toshiba Corp 単結晶の加工方法
CH690845A5 (de) 1994-05-19 2001-02-15 Tokyo Seimitsu Co Ltd Verfahren zum Positionieren eines Werkstücks und Vorrichtung hierfür.
US5529051A (en) 1994-07-26 1996-06-25 At&T Corp. Method of preparing silicon wafers
JP3427956B2 (ja) 1995-04-14 2003-07-22 信越半導体株式会社 ワイヤーソー装置
TW355151B (en) 1995-07-07 1999-04-01 Tokyo Seimitsu Co Ltd A method for cutting single chip material by the steel saw
JPH0985736A (ja) * 1995-09-22 1997-03-31 Toray Eng Co Ltd ワイヤ式切断装置
US6024814A (en) 1995-11-30 2000-02-15 Nippei Toyama Corporation Method for processing ingots
DE19607695A1 (de) * 1996-02-29 1997-09-04 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben
CH692331A5 (de) 1996-06-04 2002-05-15 Tokyo Seimitsu Co Ltd Drahtsäge und Schneidverfahren unter Einsatz derselben.
JP3079203B2 (ja) * 1996-11-15 2000-08-21 住友金属工業株式会社 半導体ウエーハの製造方法
JP3918216B2 (ja) 1997-01-08 2007-05-23 住友金属鉱山株式会社 単結晶の切断装置と方法
US5768335A (en) * 1997-02-10 1998-06-16 Lucent Technologies Inc. Apparatus and method for measuring the orientation of a single crystal surface
JPH10272620A (ja) * 1997-03-31 1998-10-13 Tokyo Seimitsu Co Ltd 結晶材料加工装置
JPH10278040A (ja) * 1997-04-01 1998-10-20 Tokyo Seimitsu Co Ltd 結晶材料加工装置及び結晶材料の設置方法
JPH112614A (ja) * 1997-06-13 1999-01-06 Rigaku Corp 単結晶軸方位x線測定方法及び装置
US5878737A (en) 1997-07-07 1999-03-09 Laser Technology West Limited Apparatus and method for slicing a workpiece utilizing a diamond impregnated wire
JP3709664B2 (ja) * 1997-07-23 2005-10-26 株式会社東京精密 結晶軸の傾き角度測定方法
JP3195760B2 (ja) * 1997-08-05 2001-08-06 株式会社スーパーシリコン研究所 インゴット切断面の結晶方位設定方法
JP3847913B2 (ja) 1997-08-27 2006-11-22 東芝Itコントロールシステム株式会社 結晶方位決定装置
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
US6055293A (en) * 1998-06-30 2000-04-25 Seh America, Inc. Method for identifying desired features in a crystal
JP2000171417A (ja) * 1998-12-04 2000-06-23 Toshiba Ceramics Co Ltd 方位測定補助装置及びそれを用いた方位測定加工方法
DE60043761D1 (de) * 1999-03-31 2010-03-18 Fujifilm Corp Einkristallines optisches Element mit einer bezüglich einer Spaltungsebene geneigten lichtdurchlässigen Oberfläche
JP2000354940A (ja) * 1999-06-16 2000-12-26 Rigaku Corp 単結晶インゴットの加工装置
DE10052154A1 (de) 2000-10-20 2002-05-08 Freiberger Compound Mat Gmbh Verfahren und Vorrichtung zum Trennen von Einkristallen, Justiervorrichtung und Testverfahren zum Ermitteln einer Orientierung eines Einkristalls für ein derartiges Verfahren

Also Published As

Publication number Publication date
TWI224670B (en) 2004-12-01
DE50210785D1 (de) 2007-10-04
RU2004100543A (ru) 2005-06-10
EP1399306B1 (de) 2007-08-15
SK14932003A3 (sk) 2004-06-08
DE50210714D1 (de) 2007-09-27
US20040168682A1 (en) 2004-09-02
CZ20033395A3 (cs) 2004-05-12
WO2002100619A1 (de) 2002-12-19
JP4716652B2 (ja) 2011-07-06
CN100569475C (zh) 2009-12-16
US6923171B2 (en) 2005-08-02
CN1529647A (zh) 2004-09-15
JP2011003929A (ja) 2011-01-06
JP2004533347A (ja) 2004-11-04
DE10128630A1 (de) 2003-01-02
CN1736681A (zh) 2006-02-22
EP1568457B1 (de) 2007-08-22
EP1399306A1 (de) 2004-03-24
JP5357122B2 (ja) 2013-12-04
RU2296671C2 (ru) 2007-04-10
CZ304828B6 (cs) 2014-11-26
ATE369956T1 (de) 2007-09-15
CN100546793C (zh) 2009-10-07
EP1568457A1 (de) 2005-08-31

Similar Documents

Publication Publication Date Title
SK286829B6 (sk) Spôsob rezania monokryštálu a zariadenie na vykonávanie tohto spôsobu
KR101756480B1 (ko) 레이저 가공 장치
RU2365905C2 (ru) Способ и устройство для промеров, ориентирования и фиксации минимум одного монокристалла
JP2004533347A5 (cs)
KR101854891B1 (ko) 레이저 가공 장치
JP6923067B2 (ja) 半導体単結晶インゴットのスライス方法
JPH08309737A (ja) 単結晶インゴットの加工方法
JPH09325124A (ja) X線を利用したインゴットの結晶軸方位調整方法及び装置
TWI845723B (zh) 膠膜黏貼機
CN108214955A (zh) 一种用于氮化镓晶体的定向切割装置与加工方法
JP3280869B2 (ja) 劈開性を持つ単結晶インゴットの切断加工時の結晶方位合わせ方法
US5561912A (en) Three axis goniometer
JP3635324B2 (ja) 単結晶研磨加工面を所定の方位角に設定調整する方法ならびにこの方法を実施するのに用いられる研磨加工治具
JP2001324457A (ja) ウェハの結晶方位測定用治具
JPH10246797A (ja) コリメータセッティング装置
JPH06258262A (ja) 単結晶インゴットの方位決め方法及び装置