SG73497A1 - Wafer processing apparatus wafer processing method and soi wafer fabrication method - Google Patents
Wafer processing apparatus wafer processing method and soi wafer fabrication methodInfo
- Publication number
- SG73497A1 SG73497A1 SG1998000238A SG1998000238A SG73497A1 SG 73497 A1 SG73497 A1 SG 73497A1 SG 1998000238 A SG1998000238 A SG 1998000238A SG 1998000238 A SG1998000238 A SG 1998000238A SG 73497 A1 SG73497 A1 SG 73497A1
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- wafer processing
- processing apparatus
- soi
- rotating rods
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9021796A JPH10223585A (ja) | 1997-02-04 | 1997-02-04 | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG73497A1 true SG73497A1 (en) | 2000-06-20 |
Family
ID=12065023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998000238A SG73497A1 (en) | 1997-02-04 | 1998-02-04 | Wafer processing apparatus wafer processing method and soi wafer fabrication method |
Country Status (11)
Country | Link |
---|---|
US (1) | US6337030B1 (zh) |
EP (1) | EP0856873B1 (zh) |
JP (1) | JPH10223585A (zh) |
KR (1) | KR100416963B1 (zh) |
CN (1) | CN1108632C (zh) |
AT (1) | ATE280435T1 (zh) |
AU (1) | AU722096B2 (zh) |
CA (1) | CA2228571C (zh) |
DE (1) | DE69827051T2 (zh) |
SG (1) | SG73497A1 (zh) |
TW (1) | TW473863B (zh) |
Families Citing this family (51)
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JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
US6767840B1 (en) * | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
US6520191B1 (en) | 1998-10-19 | 2003-02-18 | Memc Electronic Materials, Inc. | Carrier for cleaning silicon wafers |
JP2000124183A (ja) * | 1998-10-19 | 2000-04-28 | Memc Kk | シリコンウェーハ洗浄用キャリア |
US6412503B1 (en) * | 1999-06-01 | 2002-07-02 | Applied Materials, Inc. | Magnetically coupled substrate roller |
DE19934300C2 (de) * | 1999-07-21 | 2002-02-07 | Steag Micro Tech Gmbh | Vorrichtung zum Behandeln von Substraten |
EP1139396A3 (en) * | 2000-03-31 | 2003-08-27 | Texas Instruments Incorporated | Fixture and method for uniform electroless metal deposition on integrated circuit bond pads |
US20030181042A1 (en) * | 2002-03-19 | 2003-09-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching uniformity in wet bench tools |
US20030211427A1 (en) * | 2002-05-07 | 2003-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thick film photoresist stripping |
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US20040238119A1 (en) * | 2003-05-26 | 2004-12-02 | Ching-Yu Chang | [apparatus and method for etching silicon nitride thin film ] |
JP4509501B2 (ja) * | 2003-07-31 | 2010-07-21 | Sumco Techxiv株式会社 | 円板状部材のエッチング方法及び装置 |
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JP4705517B2 (ja) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
KR100766417B1 (ko) | 2006-07-11 | 2007-10-12 | 이기정 | 수납 부재 및 이를 포함하는 박판화 장치 |
DE202006020339U1 (de) * | 2006-12-15 | 2008-04-10 | Rena Sondermaschinen Gmbh | Vorrichtung zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben |
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KR101104016B1 (ko) * | 2008-11-04 | 2012-01-06 | 주식회사 엘지실트론 | 웨이퍼 처리 장치 및 이에 사용되는 배럴과, 웨이퍼 처리 방법 |
CN101844111A (zh) * | 2009-04-08 | 2010-09-29 | 佛山市兴民科技有限公司 | 一种超声浮选方法及其装置和用途 |
KR101009584B1 (ko) | 2010-11-10 | 2011-01-20 | 주식회사 에이에스이 | 웨이퍼 세정장치 |
JP5696491B2 (ja) * | 2011-01-20 | 2015-04-08 | 株式会社Sumco | ウェーハ洗浄装置及び洗浄方法 |
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CN104746146A (zh) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | 一种单晶硅片的制绒方法 |
US9562291B2 (en) | 2014-01-14 | 2017-02-07 | Mei, Llc | Metal etch system |
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JP6860447B2 (ja) * | 2017-02-15 | 2021-04-14 | キオクシア株式会社 | 基板処理装置 |
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US12074041B2 (en) * | 2018-06-29 | 2024-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench structure |
CN111477561A (zh) * | 2019-01-23 | 2020-07-31 | 弘塑科技股份有限公司 | 批次基板湿式处理装置及批次基板湿式处理方法 |
CN112435955B (zh) * | 2019-08-26 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | 一种晶圆裂片的支撑装置及其固定方法 |
CN111063642B (zh) * | 2019-11-20 | 2023-04-14 | 至微半导体(上海)有限公司 | 具有限位功能的活动式多轴向连杆装置 |
CN110931401B (zh) * | 2020-01-02 | 2022-06-03 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 晶圆片盒旋转装置及片盒旋转升降设备 |
CN113066753B (zh) * | 2021-03-10 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 晶片升降支撑装置及清洗设备 |
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JPH0910709A (ja) | 1995-06-30 | 1997-01-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TW355815B (en) | 1996-05-28 | 1999-04-11 | Canon Kasei Kk | Cleaning methods of porous surface and semiconductor surface |
JPH10150013A (ja) | 1996-11-20 | 1998-06-02 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH10223585A (ja) | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにsoiウェハの製造方法 |
TW504041U (en) | 1997-02-21 | 2002-09-21 | Canon Kk | Wafer processing apparatus |
JP3847935B2 (ja) | 1998-01-09 | 2006-11-22 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
-
1997
- 1997-02-04 JP JP9021796A patent/JPH10223585A/ja not_active Withdrawn
-
1998
- 1998-01-29 US US09/015,809 patent/US6337030B1/en not_active Expired - Fee Related
- 1998-02-02 CA CA002228571A patent/CA2228571C/en not_active Expired - Fee Related
- 1998-02-03 TW TW087101316A patent/TW473863B/zh not_active IP Right Cessation
- 1998-02-03 AU AU52897/98A patent/AU722096B2/en not_active Ceased
- 1998-02-03 DE DE69827051T patent/DE69827051T2/de not_active Expired - Fee Related
- 1998-02-03 AT AT98101824T patent/ATE280435T1/de not_active IP Right Cessation
- 1998-02-03 EP EP98101824A patent/EP0856873B1/en not_active Expired - Lifetime
- 1998-02-04 CN CN98103730A patent/CN1108632C/zh not_active Expired - Fee Related
- 1998-02-04 KR KR10-1998-0003020A patent/KR100416963B1/ko not_active IP Right Cessation
- 1998-02-04 SG SG1998000238A patent/SG73497A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
ATE280435T1 (de) | 2004-11-15 |
CA2228571A1 (en) | 1998-08-04 |
US6337030B1 (en) | 2002-01-08 |
CN1192579A (zh) | 1998-09-09 |
AU722096B2 (en) | 2000-07-20 |
CA2228571C (en) | 2003-04-29 |
DE69827051T2 (de) | 2005-09-08 |
EP0856873B1 (en) | 2004-10-20 |
KR100416963B1 (ko) | 2004-03-26 |
EP0856873A2 (en) | 1998-08-05 |
CN1108632C (zh) | 2003-05-14 |
EP0856873A3 (en) | 2001-08-29 |
TW473863B (en) | 2002-01-21 |
KR19980071052A (ko) | 1998-10-26 |
JPH10223585A (ja) | 1998-08-21 |
DE69827051D1 (de) | 2004-11-25 |
AU5289798A (en) | 1998-08-06 |
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