SG160302A1 - Method for manufacturing semiconductor substrate - Google Patents

Method for manufacturing semiconductor substrate

Info

Publication number
SG160302A1
SG160302A1 SG200906194-6A SG2009061946A SG160302A1 SG 160302 A1 SG160302 A1 SG 160302A1 SG 2009061946 A SG2009061946 A SG 2009061946A SG 160302 A1 SG160302 A1 SG 160302A1
Authority
SG
Singapore
Prior art keywords
insulating film
semiconductor substrate
semiconductor layer
base substrate
irradiating
Prior art date
Application number
SG200906194-6A
Other languages
English (en)
Inventor
Motomu Kurata
Shinya Sasagawa
Taiga Muraoka
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG160302A1 publication Critical patent/SG160302A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
SG200906194-6A 2008-09-29 2009-09-17 Method for manufacturing semiconductor substrate SG160302A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008251335 2008-09-29

Publications (1)

Publication Number Publication Date
SG160302A1 true SG160302A1 (en) 2010-04-29

Family

ID=42057899

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200906194-6A SG160302A1 (en) 2008-09-29 2009-09-17 Method for manufacturing semiconductor substrate

Country Status (5)

Country Link
US (1) US8383491B2 (enExample)
JP (1) JP5666794B2 (enExample)
KR (1) KR101576815B1 (enExample)
SG (1) SG160302A1 (enExample)
TW (1) TWI529805B (enExample)

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* Cited by examiner, † Cited by third party
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JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20120021588A1 (en) * 2010-07-23 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and semiconductor device
JP5902917B2 (ja) * 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
US8842358B2 (en) 2012-08-01 2014-09-23 Gentex Corporation Apparatus, method, and process with laser induced channel edge
AT515945B1 (de) * 2014-09-05 2016-01-15 Piezocryst Advanced Sensorics Sensorelement
US11127601B2 (en) * 2019-05-21 2021-09-21 Applied Materials, Inc. Phosphorus fugitive emission control
CN112599470B (zh) * 2020-12-08 2024-10-29 上海新昇半导体科技有限公司 一种绝缘体上硅结构及其方法

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DE69133359T2 (de) * 1990-08-03 2004-12-16 Canon K.K. Verfahren zur Herstellung eines SOI-Substrats
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6054363A (en) * 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH11307472A (ja) * 1998-04-23 1999-11-05 Shin Etsu Handotai Co Ltd 水素イオン剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379927B2 (ja) * 1998-05-27 2009-12-09 信越半導体株式会社 Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
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JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
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JP5463017B2 (ja) * 2007-09-21 2014-04-09 株式会社半導体エネルギー研究所 基板の作製方法
JP5411438B2 (ja) * 2008-03-18 2014-02-12 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Also Published As

Publication number Publication date
JP2010103515A (ja) 2010-05-06
TWI529805B (zh) 2016-04-11
US8383491B2 (en) 2013-02-26
KR20100036209A (ko) 2010-04-07
KR101576815B1 (ko) 2015-12-11
US20100081253A1 (en) 2010-04-01
TW201030850A (en) 2010-08-16
JP5666794B2 (ja) 2015-02-12

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