JP2009010365A5 - - Google Patents

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Publication number
JP2009010365A5
JP2009010365A5 JP2008140842A JP2008140842A JP2009010365A5 JP 2009010365 A5 JP2009010365 A5 JP 2009010365A5 JP 2008140842 A JP2008140842 A JP 2008140842A JP 2008140842 A JP2008140842 A JP 2008140842A JP 2009010365 A5 JP2009010365 A5 JP 2009010365A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor layer
region
layer
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JP2008140842A
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English (en)
Japanese (ja)
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JP2009010365A (ja
JP5331381B2 (ja
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Priority to JP2008140842A priority Critical patent/JP5331381B2/ja
Priority claimed from JP2008140842A external-priority patent/JP5331381B2/ja
Publication of JP2009010365A publication Critical patent/JP2009010365A/ja
Publication of JP2009010365A5 publication Critical patent/JP2009010365A5/ja
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Publication of JP5331381B2 publication Critical patent/JP5331381B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008140842A 2007-06-01 2008-05-29 半導体装置の作製方法 Expired - Fee Related JP5331381B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008140842A JP5331381B2 (ja) 2007-06-01 2008-05-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007146540 2007-06-01
JP2007146540 2007-06-01
JP2008140842A JP5331381B2 (ja) 2007-06-01 2008-05-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009010365A JP2009010365A (ja) 2009-01-15
JP2009010365A5 true JP2009010365A5 (enExample) 2011-05-06
JP5331381B2 JP5331381B2 (ja) 2013-10-30

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ID=40088772

Family Applications (1)

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JP2008140842A Expired - Fee Related JP5331381B2 (ja) 2007-06-01 2008-05-29 半導体装置の作製方法

Country Status (3)

Country Link
US (2) US7745268B2 (enExample)
JP (1) JP5331381B2 (enExample)
KR (1) KR101492464B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476927B (zh) * 2007-05-18 2015-03-11 Semiconductor Energy Lab 半導體裝置的製造方法
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5503876B2 (ja) * 2008-01-24 2014-05-28 株式会社半導体エネルギー研究所 半導体基板の製造方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
US7943414B2 (en) * 2008-08-01 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
SG161151A1 (en) * 2008-10-22 2010-05-27 Semiconductor Energy Lab Soi substrate and method for manufacturing the same
SG182208A1 (en) * 2008-12-15 2012-07-30 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
JP2010177391A (ja) * 2009-01-29 2010-08-12 Sony Corp 固体撮像装置、電子機器、固体撮像装置の製造方法
JP5902917B2 (ja) 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
EP2637210A1 (en) * 2012-03-05 2013-09-11 ABB Technology AG Power semiconductor device and method for manufacturing thereof
JP6076068B2 (ja) * 2012-12-17 2017-02-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置
CN104538354B (zh) * 2014-12-31 2018-01-09 深圳市华星光电技术有限公司 一种ltps tft像素单元及其制造方法
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
KR20250083279A (ko) 2023-11-30 2025-06-10 삼성디스플레이 주식회사 표시 장치의 제조 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142738A (ja) * 1984-12-17 1986-06-30 Toshiba Corp 単結晶基体へのイオン注入方法
JPH03252393A (ja) * 1990-03-02 1991-11-11 Nec Corp 表面プロセス制御方法及び装置
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP4101409B2 (ja) * 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
TW544938B (en) 2001-06-01 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2003142402A (ja) * 2001-08-10 2003-05-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
TW589667B (en) * 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4772258B2 (ja) * 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
US20070117287A1 (en) 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
KR101457656B1 (ko) * 2007-05-17 2014-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법, 표시장치의 제조방법, 반도체장치,표시장치 및 전자기기

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