JP5666794B2 - Ｓｏｉ基板の作製方法 - Google Patents

Ｓｏｉ基板の作製方法 Download PDF

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Publication number
JP5666794B2
JP5666794B2 JP2009220730A JP2009220730A JP5666794B2 JP 5666794 B2 JP5666794 B2 JP 5666794B2 JP 2009220730 A JP2009220730 A JP 2009220730A JP 2009220730 A JP2009220730 A JP 2009220730A JP 5666794 B2 JP5666794 B2 JP 5666794B2
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Japan
Prior art keywords
semiconductor layer
single crystal
substrate
insulating film
layer
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Expired - Fee Related
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JP2009220730A
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English (en)
Japanese (ja)
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JP2010103515A (ja
JP2010103515A5 (enExample
Inventor
求 倉田
求 倉田
慎也 笹川
慎也 笹川
大河 村岡
大河 村岡
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009220730A priority Critical patent/JP5666794B2/ja
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Publication of JP2010103515A5 publication Critical patent/JP2010103515A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
JP2009220730A 2008-09-29 2009-09-25 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5666794B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009220730A JP5666794B2 (ja) 2008-09-29 2009-09-25 Ｓｏｉ基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008251335 2008-09-29
JP2008251335 2008-09-29
JP2009220730A JP5666794B2 (ja) 2008-09-29 2009-09-25 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010103515A JP2010103515A (ja) 2010-05-06
JP2010103515A5 JP2010103515A5 (enExample) 2012-10-18
JP5666794B2 true JP5666794B2 (ja) 2015-02-12

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JP2009220730A Expired - Fee Related JP5666794B2 (ja) 2008-09-29 2009-09-25 Ｓｏｉ基板の作製方法

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Country Link
US (1) US8383491B2 (enExample)
JP (1) JP5666794B2 (enExample)
KR (1) KR101576815B1 (enExample)
SG (1) SG160302A1 (enExample)
TW (1) TWI529805B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20120021588A1 (en) * 2010-07-23 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and semiconductor device
JP5902917B2 (ja) * 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
US8842358B2 (en) 2012-08-01 2014-09-23 Gentex Corporation Apparatus, method, and process with laser induced channel edge
AT515945B1 (de) * 2014-09-05 2016-01-15 Piezocryst Advanced Sensorics Sensorelement
US11127601B2 (en) * 2019-05-21 2021-09-21 Applied Materials, Inc. Phosphorus fugitive emission control
CN112599470B (zh) * 2020-12-08 2024-10-29 上海新昇半导体科技有限公司 一种绝缘体上硅结构及其方法

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DE69133359T2 (de) * 1990-08-03 2004-12-16 Canon K.K. Verfahren zur Herstellung eines SOI-Substrats
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
CA2069038C (en) * 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6054363A (en) * 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH11307472A (ja) * 1998-04-23 1999-11-05 Shin Etsu Handotai Co Ltd 水素イオン剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379927B2 (ja) * 1998-05-27 2009-12-09 信越半導体株式会社 Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US20020089016A1 (en) * 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4379943B2 (ja) * 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
EP1212787B1 (en) * 1999-08-10 2014-10-08 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
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JP4507395B2 (ja) 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US6583440B2 (en) * 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
US7625808B2 (en) * 2003-09-01 2009-12-01 Sumco Corporation Method for manufacturing bonded wafer
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP2005251912A (ja) * 2004-03-03 2005-09-15 Seiko Epson Corp 複合半導体基板の製造方法、複合半導体基板、電気光学装置および電子機器
JP4730581B2 (ja) * 2004-06-17 2011-07-20 信越半導体株式会社 貼り合わせウェーハの製造方法
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JP4977999B2 (ja) * 2005-11-21 2012-07-18 株式会社Ｓｕｍｃｏ 貼合せ基板の製造方法及びその方法で製造された貼合せ基板
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
US7608521B2 (en) * 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP5463017B2 (ja) * 2007-09-21 2014-04-09 株式会社半導体エネルギー研究所 基板の作製方法
JP5411438B2 (ja) * 2008-03-18 2014-02-12 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US8003483B2 (en) * 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Also Published As

Publication number Publication date
JP2010103515A (ja) 2010-05-06
SG160302A1 (en) 2010-04-29
TWI529805B (zh) 2016-04-11
US8383491B2 (en) 2013-02-26
KR20100036209A (ko) 2010-04-07
KR101576815B1 (ko) 2015-12-11
US20100081253A1 (en) 2010-04-01
TW201030850A (en) 2010-08-16

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