KR101576815B1 - 반도체 기판의 제작 방법 - Google Patents

반도체 기판의 제작 방법 Download PDF

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Publication number
KR101576815B1
KR101576815B1 KR1020090092181A KR20090092181A KR101576815B1 KR 101576815 B1 KR101576815 B1 KR 101576815B1 KR 1020090092181 A KR1020090092181 A KR 1020090092181A KR 20090092181 A KR20090092181 A KR 20090092181A KR 101576815 B1 KR101576815 B1 KR 101576815B1
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KR
South Korea
Prior art keywords
insulating film
semiconductor layer
single crystal
substrate
crystal semiconductor
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KR1020090092181A
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English (en)
Korean (ko)
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KR20100036209A (ko
Inventor
모토무 쿠라타
신야 사사가와
타이가 무라오카
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20100036209A publication Critical patent/KR20100036209A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
KR1020090092181A 2008-09-29 2009-09-29 반도체 기판의 제작 방법 Expired - Fee Related KR101576815B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-251335 2008-09-29
JP2008251335 2008-09-29

Publications (2)

Publication Number Publication Date
KR20100036209A KR20100036209A (ko) 2010-04-07
KR101576815B1 true KR101576815B1 (ko) 2015-12-11

Family

ID=42057899

Family Applications (1)

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KR1020090092181A Expired - Fee Related KR101576815B1 (ko) 2008-09-29 2009-09-29 반도체 기판의 제작 방법

Country Status (5)

Country Link
US (1) US8383491B2 (enExample)
JP (1) JP5666794B2 (enExample)
KR (1) KR101576815B1 (enExample)
SG (1) SG160302A1 (enExample)
TW (1) TWI529805B (enExample)

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* Cited by examiner, † Cited by third party
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JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20120021588A1 (en) * 2010-07-23 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and semiconductor device
TWI500118B (zh) * 2010-11-12 2015-09-11 Semiconductor Energy Lab 半導體基底之製造方法
US8842358B2 (en) 2012-08-01 2014-09-23 Gentex Corporation Apparatus, method, and process with laser induced channel edge
AT515945B1 (de) * 2014-09-05 2016-01-15 Piezocryst Advanced Sensorics Sensorelement
US11127601B2 (en) 2019-05-21 2021-09-21 Applied Materials, Inc. Phosphorus fugitive emission control
CN112599470B (zh) * 2020-12-08 2024-10-29 上海新昇半导体科技有限公司 一种绝缘体上硅结构及其方法

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Publication number Priority date Publication date Assignee Title
JP2005252244A (ja) 2004-02-03 2005-09-15 Ishikawajima Harima Heavy Ind Co Ltd 半導体基板の製造方法
US20070281172A1 (en) 2006-05-31 2007-12-06 James Gregory Couillard Semiconductor on insulator structure made using radiation annealing
US20080200010A1 (en) 2003-01-09 2008-08-21 Sumco Corporation Method for Manufacturing Bonded Wafer

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EP0469630B1 (en) 1990-08-03 2002-05-08 Canon Kabushiki Kaisha Process for preparing a semiconductor body
US5750000A (en) 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
CA2069038C (en) 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
CN1132223C (zh) 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH11307472A (ja) 1998-04-23 1999-11-05 Shin Etsu Handotai Co Ltd 水素イオン剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379927B2 (ja) * 1998-05-27 2009-12-09 信越半導体株式会社 Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US20020089016A1 (en) 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379943B2 (ja) * 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
EP1212787B1 (en) 1999-08-10 2014-10-08 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
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US6566278B1 (en) 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
JP4507395B2 (ja) 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
JP2005251912A (ja) * 2004-03-03 2005-09-15 Seiko Epson Corp 複合半導体基板の製造方法、複合半導体基板、電気光学装置および電子機器
JP4730581B2 (ja) 2004-06-17 2011-07-20 信越半導体株式会社 貼り合わせウェーハの製造方法
KR100885572B1 (ko) 2004-09-14 2009-02-24 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 디스플레이, 어레이 기판, 및 디스플레이 제조 방법
JP4977999B2 (ja) * 2005-11-21 2012-07-18 株式会社Ｓｕｍｃｏ 貼合せ基板の製造方法及びその方法で製造された貼合せ基板
US7608521B2 (en) 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP5463017B2 (ja) * 2007-09-21 2014-04-09 株式会社半導体エネルギー研究所 基板の作製方法
JP5411438B2 (ja) * 2008-03-18 2014-02-12 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US8003483B2 (en) 2008-03-18 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080200010A1 (en) 2003-01-09 2008-08-21 Sumco Corporation Method for Manufacturing Bonded Wafer
JP2005252244A (ja) 2004-02-03 2005-09-15 Ishikawajima Harima Heavy Ind Co Ltd 半導体基板の製造方法
US20070281172A1 (en) 2006-05-31 2007-12-06 James Gregory Couillard Semiconductor on insulator structure made using radiation annealing

Also Published As

Publication number Publication date
US20100081253A1 (en) 2010-04-01
TW201030850A (en) 2010-08-16
TWI529805B (zh) 2016-04-11
SG160302A1 (en) 2010-04-29
JP2010103515A (ja) 2010-05-06
JP5666794B2 (ja) 2015-02-12
US8383491B2 (en) 2013-02-26
KR20100036209A (ko) 2010-04-07

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