JP2012109519A - 積層体、およびその積層体の分離方法 - Google Patents
積層体、およびその積層体の分離方法 Download PDFInfo
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Abstract
【解決手段】積層体は、光透過性の支持体と、上記支持体によって支持される被支持基板と、上記被支持基板における上記支持体によって支持される側の面に設けられている接着層と、上記支持体と上記被支持基板との間に設けられている、フルオロカーボンからなる分離層とを備えており、上記分離層は、上記支持体を介して照射される光を吸収することによって変質するようになっている。
【選択図】図1
Description
本発明に係る積層体は、光透過性の支持体と、上記支持体によって支持される被支持基板と、上記被支持基板における上記支持体によって支持される側の面に設けられている接着層と、上記支持体と上記被支持基板との間に設けられている、フルオロカーボンからなる分離層とを備えており、上記分離層は、上記支持体を介して照射される光を吸収することによって変質するようになっている。
上述のように、本発明に係る積層体は分離層を備えている。また、分離層はフルオロカーボンからなる構成である。当該分離層は、フルオロカーボンによって構成されることにより、光を吸収することによって変質するようになっており、その結果として、光の照射を受ける前の強度または接着性を失う。よって、わずかな外力を加える(例えば、支持体を持ち上げるなど)ことによって、分離層が破壊されて、支持体と被支持基板とを容易に分離することができる。
上述のように、支持体は光透過性を有している。これは、積層体の外側から光を照射したときに、当該光が支持体を通過して上記分離層に到達することを目的としている。したがって、支持体は、必ずしもすべての光を透過させる必要はなく、分離層に吸収されるべき(所望の波長を有している)光を透過させることができればよい。
接着層は、被支持基板を支持体に接着固定すると同時に、被支持基板の表面を覆って保護する構成である。よって、接着層は、被支持基板の加工または搬送の際に、支持体に対する被支持基板の固定、および被支持基板の保護すべき面の被覆を維持する接着性および強度を有している必要がある。一方で、支持体に対する被支持基板の固定が不要になったときに、容易に被支持基板から剥離または除去することができる必要がある。
本発明に係る積層体の製造方法について、図1を参照して以下に説明する。図1は、積層体の製造方法、および積層体からの半導体ウエハの分離処理を示す図である。
図1に示すように、半導体ウエハの加工が終わった後に、支持体側の面から積層体にレーザが照射される(図1の(4))。レーザの照射を受けると(図2の(1))、分離層は変質を起こす(図2の(2))。図2は、積層体の分離方法を説明するための図である。
(積層体の作製)
実施例の積層体を以下のように作製した。プラズマCVD装置において、厚さ0.7mmの板状の支持体上に、CHF3ガスを用いて、フルオロカーボンの膜を成膜した。これにより、厚さ1μmの分離層が形成された支持体を得た。
実施例の積層体を、以下のような処理をした上で、支持体が半導体ウエハ基板から分離されるか否かについて評価した。
CHF3ガスをC4F8ガスに変更したこと以外は実施例1と同様の処理を実施し、支持体が半導体ウエハ基板から分離されるか否かについて評価した。
Claims (5)
- 光透過性の支持体と、
上記支持体によって支持される被支持基板と、
上記被支持基板における上記支持体によって支持される側の面に設けられている接着層と、
上記支持体と上記被支持基板との間に設けられている、フルオロカーボンからなる分離層とを備えており、
上記分離層は、上記支持体を介して照射される光を吸収することによって変質するようになっていることを特徴とする積層体。 - 上記分離層が、プラズマCVD法により積層されたものであることを特徴とする請求項1に記載の積層体。
- 上記支持体が、ガラスまたはシリコンからなることを特徴とする請求項1または2に記載の積層体。
- 上記支持体と上記分離層との間に、少なくとも1つの層が設けられていることを特徴とする請求項1〜3の何れか1項に記載の積層体。
- 請求項1〜4の何れか1項に記載の積層体において、上記被支持基板と上記支持体とを分離する分離方法であって、
上記支持体を介して上記分離層に光を照射することによって、上記分離層を変質させる工程を包含することを特徴とする分離方法。
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JP2011102229A JP5756334B2 (ja) | 2010-10-29 | 2011-04-28 | 積層体、およびその積層体の分離方法 |
PCT/JP2011/069173 WO2012056803A1 (ja) | 2010-10-29 | 2011-08-25 | 積層体、およびその積層体の分離方法 |
US13/880,802 US9048311B2 (en) | 2010-10-29 | 2011-08-25 | Laminate and method for separating the same |
KR1020137012942A KR101561359B1 (ko) | 2010-10-29 | 2011-08-25 | 적층체, 및 그 적층체의 분리 방법 |
TW100135751A TWI505940B (zh) | 2010-10-29 | 2011-10-03 | 層積體及該層積體之分離方法 |
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JP2010243160 | 2010-10-29 | ||
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JP2011102229A JP5756334B2 (ja) | 2010-10-29 | 2011-04-28 | 積層体、およびその積層体の分離方法 |
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JP2012109519A true JP2012109519A (ja) | 2012-06-07 |
JP5756334B2 JP5756334B2 (ja) | 2015-07-29 |
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JP (1) | JP5756334B2 (ja) |
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Cited By (13)
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JP2013022731A (ja) * | 2011-07-14 | 2013-02-04 | Tokyo Ohka Kogyo Co Ltd | 積層体、分離方法、及び製造方法 |
JP2014072453A (ja) * | 2012-09-28 | 2014-04-21 | Tokyo Ohka Kogyo Co Ltd | プラズマ処理装置、プラズマ処理方法および積層体の製造方法 |
JP2014070257A (ja) * | 2012-09-28 | 2014-04-21 | Tokyo Ohka Kogyo Co Ltd | 積層体の製造方法、および分離層形成装置 |
JP2014069494A (ja) * | 2012-09-28 | 2014-04-21 | Tokyo Ohka Kogyo Co Ltd | 積層体の製造方法および積層体 |
JP2014072454A (ja) * | 2012-09-28 | 2014-04-21 | Tokyo Ohka Kogyo Co Ltd | プラズマ処理装置および積層体の製造方法 |
JP2014194986A (ja) * | 2013-03-28 | 2014-10-09 | Tokyo Ohka Kogyo Co Ltd | 基板の処理方法 |
JP2014199858A (ja) * | 2013-03-29 | 2014-10-23 | 東京応化工業株式会社 | 処理方法及び処理装置 |
WO2015029577A1 (ja) * | 2013-08-28 | 2015-03-05 | 東京応化工業株式会社 | 積層体の製造方法及び積層体 |
JP2015054511A (ja) * | 2013-09-13 | 2015-03-23 | 東京応化工業株式会社 | 積層体、積層体形成キットおよび積層体形成方法 |
KR20150046230A (ko) | 2012-09-28 | 2015-04-29 | 후지필름 가부시키가이샤 | 반도체 장치 제조용 가접합층, 적층체, 및 반도체 장치의 제조 방법 |
JP2015098565A (ja) * | 2013-11-20 | 2015-05-28 | 東京応化工業株式会社 | 処理方法 |
JPWO2014050820A1 (ja) * | 2012-09-28 | 2016-08-22 | 東京応化工業株式会社 | 積層体、積層体の分離方法、および分離層の評価方法 |
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WO2012056803A1 (ja) | 2012-05-03 |
KR20140000249A (ko) | 2014-01-02 |
KR101561359B1 (ko) | 2015-10-16 |
US9048311B2 (en) | 2015-06-02 |
TW201231290A (en) | 2012-08-01 |
JP5756334B2 (ja) | 2015-07-29 |
TWI505940B (zh) | 2015-11-01 |
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