SG146620A1 - Boosted substrate/tub programming for flash memories - Google Patents

Boosted substrate/tub programming for flash memories

Info

Publication number
SG146620A1
SG146620A1 SG200806592-2A SG2008065922A SG146620A1 SG 146620 A1 SG146620 A1 SG 146620A1 SG 2008065922 A SG2008065922 A SG 2008065922A SG 146620 A1 SG146620 A1 SG 146620A1
Authority
SG
Singapore
Prior art keywords
substrate
programming
floating gate
tub
boosted
Prior art date
Application number
SG200806592-2A
Other languages
English (en)
Inventor
Hagop A Nazarian
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG146620A1 publication Critical patent/SG146620A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
SG200806592-2A 2003-09-16 2004-09-14 Boosted substrate/tub programming for flash memories SG146620A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/663,277 US6977842B2 (en) 2003-09-16 2003-09-16 Boosted substrate/tub programming for flash memories

Publications (1)

Publication Number Publication Date
SG146620A1 true SG146620A1 (en) 2008-10-30

Family

ID=34274335

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200806592-2A SG146620A1 (en) 2003-09-16 2004-09-14 Boosted substrate/tub programming for flash memories

Country Status (9)

Country Link
US (2) US6977842B2 (ja)
EP (1) EP1665281B1 (ja)
JP (1) JP4417383B2 (ja)
KR (1) KR100769795B1 (ja)
CN (1) CN100479063C (ja)
AT (1) ATE371250T1 (ja)
DE (1) DE602004008490T2 (ja)
SG (1) SG146620A1 (ja)
WO (1) WO2005029501A1 (ja)

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KR102252531B1 (ko) * 2017-12-15 2021-05-14 청두 아날로그 써키트 테크놀로지 인코퍼레이티드 플래시 메모리에 프로그래밍하는 회로 및 방법
CN110718258B (zh) * 2018-07-13 2021-10-08 西安格易安创集成电路有限公司 一种非易失存储器处理电路及方法
CN110838318A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 提高存储器数据可靠性的方法和系统
CN109378028B (zh) * 2018-08-22 2020-11-17 长江存储科技有限责任公司 一种降低编程干扰的控制方法及装置
KR20210070761A (ko) * 2019-12-05 2021-06-15 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
JP7446879B2 (ja) 2020-03-18 2024-03-11 キオクシア株式会社 半導体記憶装置
CN111445938B (zh) * 2020-03-26 2022-03-18 北京大学 编码型闪存结构及数据处理方法
CN112201295B (zh) * 2020-09-11 2021-09-17 中天弘宇集成电路有限责任公司 Nand闪存编程方法
CN112365913B (zh) * 2020-09-29 2021-09-03 中天弘宇集成电路有限责任公司 3d nand闪存编程方法
CN116156890B (zh) * 2023-04-19 2023-07-18 杭州领开半导体技术有限公司 Nor闪存阵列的制作方法
CN116437669A (zh) * 2023-04-19 2023-07-14 杭州领开半导体技术有限公司 Nor闪存阵列及其操作方法

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Also Published As

Publication number Publication date
US20050111260A1 (en) 2005-05-26
CN1849670A (zh) 2006-10-18
KR20060053000A (ko) 2006-05-19
EP1665281B1 (en) 2007-08-22
ATE371250T1 (de) 2007-09-15
DE602004008490T2 (de) 2008-05-15
JP4417383B2 (ja) 2010-02-17
US6977842B2 (en) 2005-12-20
CN100479063C (zh) 2009-04-15
US20050057966A1 (en) 2005-03-17
WO2005029501A1 (en) 2005-03-31
JP2007506207A (ja) 2007-03-15
US7149124B2 (en) 2006-12-12
KR100769795B1 (ko) 2007-10-25
DE602004008490D1 (de) 2007-10-04
EP1665281A1 (en) 2006-06-07

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