SG135153A1 - Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt - Google Patents

Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Info

Publication number
SG135153A1
SG135153A1 SG200701412-9A SG2007014129A SG135153A1 SG 135153 A1 SG135153 A1 SG 135153A1 SG 2007014129 A SG2007014129 A SG 2007014129A SG 135153 A1 SG135153 A1 SG 135153A1
Authority
SG
Singapore
Prior art keywords
igbt
single crystal
silicon single
crystal wafer
manufacturing
Prior art date
Application number
SG200701412-9A
Other languages
English (en)
Inventor
Toshiaki Ono
Shigeru Umeno
Wataru Sugimura
Masataka Hourai
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of SG135153A1 publication Critical patent/SG135153A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200701412-9A 2006-02-21 2007-02-16 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt SG135153A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006043572 2006-02-21
JP2007034536A JP4760729B2 (ja) 2006-02-21 2007-02-15 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Publications (1)

Publication Number Publication Date
SG135153A1 true SG135153A1 (en) 2007-09-28

Family

ID=38157985

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200701412-9A SG135153A1 (en) 2006-02-21 2007-02-16 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt
SG201101175-6A SG170005A1 (en) 2006-02-21 2007-02-16 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG201101175-6A SG170005A1 (en) 2006-02-21 2007-02-16 Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt

Country Status (9)

Country Link
US (2) US8617311B2 (fr)
EP (1) EP1881093B1 (fr)
JP (1) JP4760729B2 (fr)
KR (1) KR100928885B1 (fr)
CN (1) CN101054721B (fr)
DE (1) DE07003441T1 (fr)
MY (1) MY151924A (fr)
SG (2) SG135153A1 (fr)
TW (1) TWI347985B (fr)

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CN101054721A (zh) 2007-10-17
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US8617311B2 (en) 2013-12-31
TWI347985B (en) 2011-09-01
JP4760729B2 (ja) 2011-08-31
EP1881093B1 (fr) 2013-06-12
KR100928885B1 (ko) 2009-11-30
TW200738920A (en) 2007-10-16
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JP2007254274A (ja) 2007-10-04
SG170005A1 (en) 2011-04-29

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