JP5560546B2 - シリコンウェーハ及びその製造方法 - Google Patents
シリコンウェーハ及びその製造方法 Download PDFInfo
- Publication number
- JP5560546B2 JP5560546B2 JP2008220052A JP2008220052A JP5560546B2 JP 5560546 B2 JP5560546 B2 JP 5560546B2 JP 2008220052 A JP2008220052 A JP 2008220052A JP 2008220052 A JP2008220052 A JP 2008220052A JP 5560546 B2 JP5560546 B2 JP 5560546B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- diameter
- silicon
- less
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 63
- 229910052710 silicon Inorganic materials 0.000 title claims description 61
- 239000010703 silicon Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000013078 crystal Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- 239000001301 oxygen Substances 0.000 claims description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 63
- 238000010438 heat treatment Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
前記シリコンインゴットに中性子照射によってリンをドープする工程と、
前記シリコンインゴットからウェーハを切り出す工程と、
前記ウェーハの一方の主面にポリシリコン層または歪み層を形成する工程と、
前記ウェーハの他方の主面を鏡面研磨する工程と、を備えたことを特徴とする。
リンがドープされて抵抗率のウェーハ面内ばらつきが5%以下であり、
0.03μm以上の光散乱体が検出される領域の直径が結晶の直径の50%以上、90%以下であり、
一方の主面にポリシリコン層または歪み層を有することを特徴とする。
格子間酸素濃度が7.0×1017atoms/cm3以下であり、COP発生領域の直径が結晶の直径の90%以下であるシリコンインゴットは、CZ法により製造することができる。なお、COP発生領域の直径が結晶の直径の90%以下とは、図2に示すようにシリコンインゴット断面のCOP発生領域を円とみなした場合に、その直径D1がシリコンインゴットの直径D2に対して90%以下という意味である。また、COPの有無は、赤外明視野干渉法(アクセントオプティカルテクノロジーズ社製OPP(Optical Precipitate Profiler)等を用いることができる。)により確認することができる。
次に、製造されたシリコンインゴットに対して中性子線を照射する。この中性子線照射によって、シリコン原子の一部をリンに変換させ、これによりシリコンインゴットにリンを均一にドープさせて抵抗率が均一なインゴットが得られる。
次に、リンがドープされたシリコンインゴットからウェーハを切り出し、必要に応じてラッピングやエッチング等を行った後に、ウェーハの一方の主面にゲッタリング層として、サンドブラスト法などによって歪み層を形成するか、これに代えてポリシリコン膜を形成する。次いで、ウェーハの他方の主面を鏡面研磨したのち、洗浄を行って汚染物質を除去する。
上記のシリコンウェーハの製造方法によれば、格子間酸素濃度が7×1017atoms/cm3以下のシリコンインゴットを用いることで、IGBT製造工程での酸素析出物(BMD)の生成によるコレクタ・エミッタ間のリーク、及び酸素ドナー形成によるコレクタ・エミッタ間の耐圧低下を防止することができる。
まず、CZ法により、実施例1,2および比較例1,2のように種々の格子間酸素濃度及び結晶直径に対するCOP領域を有するシリコンインゴットを製造した。具体的には、多結晶シリコン塊を石英るつぼに投入し、アルゴン雰囲気中で多結晶シリコン塊を加熱してシリコン融液とした。
実施例1,2および比較例1,2の各ウェーハのGOI歩留まり、酸素ドナーによる抵抗率の変化、BMDの発生の有無、OSFの発生の有無をそれぞれ評価した。
上述した条件で作製した実施例1,2および比較例1,2の評価結果を表1に示す。
Claims (2)
- チョクラルスキー法により、格子間酸素濃度が7.0×1017atoms/cm3以下であり、COP発生領域の直径が結晶の直径の50%以上、90%以下であり、窒素を含まないシリコンインゴットを形成する工程と、
前記シリコンインゴットに中性子照射によってリンをドープする工程と、
前記シリコンインゴットからウェーハを切り出す工程と、
前記ウェーハの一方の主面にポリシリコン層または歪み層を形成する工程と、
前記ウェーハの他方の主面を鏡面研磨する工程と、を備え、
前記シリコンインゴットを形成する工程において、単結晶の成長速度をV(mm/分)、単結晶成長時の融点から1350℃の温度勾配G(℃/mm)としたとき、これらの比V/Gが0.18〜0.24であるIGBT用シリコンウェーハの製造方法。 - 酸素濃度が7.0×1017atoms/cm3以下であり、窒素を含まず、
リンがドープされ抵抗率のウェーハ面内ばらつきが5%以下であり、
0.03μm以上の光散乱体が検出される領域の直径が結晶の直径の50%以上、90%以下であり、
一方の主面にポリシリコン層または歪み層を有することを特徴とするIGBT用シリコンウェーハ。
但し、前記抵抗率のウェーハ面内ばらつきは、(最大値−最小値)×100/最小値で求めた値、測定位置は、ウェーハの中心、ウェーハの中心と外周の中間の位置、ウェーハ外周から5mmの位置とする。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008220052A JP5560546B2 (ja) | 2008-08-28 | 2008-08-28 | シリコンウェーハ及びその製造方法 |
US12/544,448 US8460463B2 (en) | 2008-08-28 | 2009-08-20 | Silicon wafer and method for producing the same |
EP09168545A EP2159828B1 (en) | 2008-08-28 | 2009-08-25 | Silicon wafer and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008220052A JP5560546B2 (ja) | 2008-08-28 | 2008-08-28 | シリコンウェーハ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010052989A JP2010052989A (ja) | 2010-03-11 |
JP5560546B2 true JP5560546B2 (ja) | 2014-07-30 |
Family
ID=41258464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008220052A Active JP5560546B2 (ja) | 2008-08-28 | 2008-08-28 | シリコンウェーハ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8460463B2 (ja) |
EP (1) | EP2159828B1 (ja) |
JP (1) | JP5560546B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5440564B2 (ja) * | 2011-07-14 | 2014-03-12 | 信越半導体株式会社 | 結晶欠陥の検出方法 |
DE102014107161B4 (de) * | 2014-05-21 | 2019-10-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBTs und IGBT |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1261715A (en) | 1984-07-06 | 1989-09-26 | General Signal Corporation | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique |
JPS61114537A (ja) | 1984-11-09 | 1986-06-02 | Nec Corp | シリコン半導体基板 |
JP3165071B2 (ja) | 1997-05-09 | 2001-05-14 | 日本電気株式会社 | 半導体基板及びその製造方法 |
JPH11314997A (ja) | 1998-05-01 | 1999-11-16 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶ウェーハの製造方法 |
DE19823962A1 (de) | 1998-05-28 | 1999-12-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Einkristalls |
US6413310B1 (en) | 1998-08-31 | 2002-07-02 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon single crystal wafer and silicon single crystal wafer |
JP3770013B2 (ja) | 1999-11-16 | 2006-04-26 | 株式会社Sumco | 単結晶引上方法 |
JP2002029891A (ja) | 2000-07-14 | 2002-01-29 | Wacker Nsce Corp | シリコン半導体基板とその製造方法 |
US6682597B2 (en) * | 2000-10-23 | 2004-01-27 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer |
US6428619B1 (en) | 2000-10-23 | 2002-08-06 | Mitsubishi Materials Silicon Corporation | Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer |
JP4723071B2 (ja) | 2000-10-24 | 2011-07-13 | 信越半導体株式会社 | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
DE10205084B4 (de) | 2002-02-07 | 2008-10-16 | Siltronic Ag | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
WO2004073057A1 (ja) | 2003-02-14 | 2004-08-26 | Sumitomo Mitsubishi Silicon Corporation | シリコンウェーハの製造方法 |
US7704318B2 (en) | 2003-02-25 | 2010-04-27 | Sumco Corporation | Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate |
JP5188673B2 (ja) | 2005-06-09 | 2013-04-24 | 株式会社Sumco | Igbt用のシリコンウェーハ及びその製造方法 |
JP2007022863A (ja) * | 2005-07-19 | 2007-02-01 | Sumco Corp | シリコン単結晶の育成方法およびシリコンウェーハの製造方法 |
JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
JP4760729B2 (ja) | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
-
2008
- 2008-08-28 JP JP2008220052A patent/JP5560546B2/ja active Active
-
2009
- 2009-08-20 US US12/544,448 patent/US8460463B2/en active Active
- 2009-08-25 EP EP09168545A patent/EP2159828B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2159828A2 (en) | 2010-03-03 |
JP2010052989A (ja) | 2010-03-11 |
US20100051945A1 (en) | 2010-03-04 |
US8460463B2 (en) | 2013-06-11 |
EP2159828A3 (en) | 2011-11-09 |
EP2159828B1 (en) | 2013-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5188673B2 (ja) | Igbt用のシリコンウェーハ及びその製造方法 | |
JP4760729B2 (ja) | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 | |
JP4631717B2 (ja) | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 | |
JP4805681B2 (ja) | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 | |
JP4670224B2 (ja) | シリコンウェーハの製造方法 | |
KR101715645B1 (ko) | 실리콘 단결정 웨이퍼 | |
JP5764937B2 (ja) | シリコン単結晶ウェーハの製造方法 | |
KR100971163B1 (ko) | 어닐 웨이퍼 및 어닐 웨이퍼의 제조방법 | |
KR20140001815A (ko) | 실리콘 기판의 제조 방법 및 실리콘 기판 | |
JP4760822B2 (ja) | エピタキシャルウェーハの製造方法 | |
WO2014073164A1 (ja) | シリコン単結晶の製造方法、シリコン単結晶ウェーハの製造方法、及びシリコン単結晶ウェーハ | |
JP3589119B2 (ja) | エピタキシャルウェーハの製造方法 | |
JP2010056316A (ja) | シリコンウェーハ及びその製造方法 | |
JP4131077B2 (ja) | シリコンウェーハの製造方法 | |
JP5560546B2 (ja) | シリコンウェーハ及びその製造方法 | |
JP2011054821A (ja) | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ | |
JP4570317B2 (ja) | シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法 | |
KR102192287B1 (ko) | 실리콘 단결정 웨이퍼의 열처리방법 | |
JP2012134517A (ja) | Igbt用のシリコンウェーハ及びその製造方法 | |
JP5965607B2 (ja) | シリコンウェーハの製造方法 | |
JP2007070132A (ja) | 単結晶シリコンウェーハの製造方法、単結晶シリコンウェーハ及びウェーハ検査方法 | |
JP2023070019A (ja) | シリコンウェーハおよびエピタキシャルシリコンウェーハ | |
JP5805843B2 (ja) | シリコン単結晶基板およびその製造方法 | |
JP2024038818A (ja) | シリコンウェーハおよびエピタキシャルシリコンウェーハ | |
JP2010155748A (ja) | アニ―ルウェハの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110822 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120824 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130514 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140402 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140417 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140513 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140526 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5560546 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |