JP2010052989A - シリコンウェーハ及びその製造方法 - Google Patents
シリコンウェーハ及びその製造方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 66
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 16
- 239000011574 phosphorus Substances 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 229920005591 polysilicon Polymers 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 61
- 238000010438 heat treatment Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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Abstract
【解決手段】CZ法により格子間酸素濃度が7.0×1017atoms/cm3以下であり、COP発生領域の直径が結晶の直径の90%以下であるシリコンインゴットを形成し、該シリコンインゴットにリンをドープしてからウェーハを切り出し、該ウェーハの一方の主面にポリシリコン層または歪み層を形成し、他方の主面を鏡面研磨する。
【選択図】 図1
Description
格子間酸素濃度が7.0×1017atoms/cm3以下であり、COP発生領域の直径が結晶の直径の90%以下であるシリコンインゴットは、CZ法により製造することができる。なお、COP発生領域の直径が結晶の直径の90%以下とは、図2に示すようにシリコンインゴット断面のCOP発生領域を円とみなした場合に、その直径D1がシリコンインゴットの直径D2に対して90%以下という意味である。また、COPの有無は、赤外明視野干渉法(アクセントオプティカルテクノロジーズ社製OPP(Optical Precipitate Profiler)等を用いることができる。)により確認することができる。
次に、製造されたシリコンインゴットに対して中性子線を照射する。この中性子線照射によって、シリコン原子の一部をリンに変換させ、これによりシリコンインゴットにリンを均一にドープさせて抵抗率が均一なインゴットが得られる。
次に、リンがドープされたシリコンインゴットからウェーハを切り出し、必要に応じてラッピングやエッチング等を行った後に、ウェーハの一方の主面にゲッタリング層として、サンドブラスト法などによって歪み層を形成するか、これに代えてポリシリコン膜を形成する。次いで、ウェーハの他方の主面を鏡面研磨したのち、洗浄を行って汚染物質を除去する。
上記のシリコンウェーハの製造方法によれば、格子間酸素濃度が7×1017atoms/cm3以下のシリコンインゴットを用いることで、IGBT製造工程での酸素析出物(BMD)の生成によるコレクタ・エミッタ間のリーク、及び酸素ドナー形成によるコレクタ・エミッタ間の耐圧低下を防止することができる。
まず、CZ法により、実施例1,2および比較例1,2のように種々の格子間酸素濃度及び結晶直径に対するCOP領域を有するシリコンインゴットを製造した。具体的には、多結晶シリコン塊を石英るつぼに投入し、アルゴン雰囲気中で多結晶シリコン塊を加熱してシリコン融液とした。
実施例1,2および比較例1,2の各ウェーハのGOI歩留まり、酸素ドナーによる抵抗率の変化、BMDの発生の有無、OSFの発生の有無をそれぞれ評価した。
上述した条件で作製した実施例1,2および比較例1,2の評価結果を表1に示す。
Claims (3)
- チョクラルスキー法により、格子間酸素濃度が7.0×1017atoms/cm3以下であり、COP発生領域の直径が結晶の直径の90%以下であるシリコンインゴットを形成する工程と、
前記シリコンインゴットにリンをドープする工程と、
前記シリコンインゴットからウェーハを切り出す工程と、
前記ウェーハの一方の主面にポリシリコン層または歪み層を形成する工程と、
前記ウェーハの他方の主面を鏡面研磨する工程と、を備えたことを特徴とするシリコンウェーハの製造方法。 - 請求項1に記載のシリコンウェーハの製造方法において、
前記リンは中性子照射によってドープすることを特徴とするシリコンウェーハの製造方法。 - 酸素濃度が7.0×1017atoms/cm3以下であり、
リンがドープされて抵抗率のウェーハ面内ばらつきが5%以下であり、
0.03μm以上の光散乱体が検出される領域の直径が結晶の直径の90%以下であり、
一方の主面にポリシリコン層または歪み層を有することを特徴とするシリコンウェーハ。
但し、前記抵抗率のウェーハ面内ばらつきは、(最大値−最小値)×100/最小値で求めた値、測定位置は、ウェーハの中心、ウェーハの中心と外周の中間の位置、ウェーハ外周から5mmの位置とする。
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JP2008220052A JP5560546B2 (ja) | 2008-08-28 | 2008-08-28 | シリコンウェーハ及びその製造方法 |
US12/544,448 US8460463B2 (en) | 2008-08-28 | 2009-08-20 | Silicon wafer and method for producing the same |
EP09168545A EP2159828B1 (en) | 2008-08-28 | 2009-08-25 | Silicon wafer and method for producing the same |
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JP2006344823A (ja) * | 2005-06-09 | 2006-12-21 | Sumco Corp | Igbt用のシリコンウェーハ及びその製造方法 |
JP2007022863A (ja) * | 2005-07-19 | 2007-02-01 | Sumco Corp | シリコン単結晶の育成方法およびシリコンウェーハの製造方法 |
JP2007191350A (ja) * | 2006-01-19 | 2007-08-02 | Sumco Corp | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
JP2007254274A (ja) * | 2006-02-21 | 2007-10-04 | Sumco Corp | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
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