CN106591939A - 单晶硅锭及晶圆的形成方法 - Google Patents

单晶硅锭及晶圆的形成方法 Download PDF

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CN106591939A
CN106591939A CN201510667035.5A CN201510667035A CN106591939A CN 106591939 A CN106591939 A CN 106591939A CN 201510667035 A CN201510667035 A CN 201510667035A CN 106591939 A CN106591939 A CN 106591939A
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肖德元
张汝京
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Zing Semiconductor Corp
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Zing Semiconductor Corp
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Priority to TW105106935A priority patent/TWI628318B/zh
Priority to US15/165,937 priority patent/US20170107638A1/en
Priority to JP2016115362A priority patent/JP6196353B2/ja
Priority to KR1020160092662A priority patent/KR101865467B1/ko
Priority to DE102016115518.7A priority patent/DE102016115518A1/de
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Abstract

本发明提出了一种单晶硅及晶圆的形成方法，在采用直拉法形成单晶硅锭时，对熔融状的硅中通入包含氘原子的气体，使氘原子存储在单晶硅锭的间隙中，降低氧元素及其他杂志的含量，采用单晶硅锭形成晶圆后，在晶圆上形成的器件时，氘能够扩散出，并与界面处等悬空键进行结合，形成较为稳定的结构，从而避免热载流子的穿透，降低漏电流，提高器件的性能与可靠性。

Description

单晶硅锭及晶圆的形成方法
技术领域
本发明涉及直拉法单晶生长领域及半导体制造领域，尤其涉及一种单晶硅锭及晶圆的形成方法。
背景技术
作为制造半导体器件起始材料的单晶硅通过被称之为Czochralski(CZ)技术(直拉技术)的晶体生长技术生长成圆柱形的单晶硅锭。单晶硅锭通过诸如切片、刻蚀、清洗、抛光等一系列晶圆加工工艺而被加工成晶圆。
根据CZ技术，在坩埚中，将硅片在单晶炉中加热融化，再将一根直径只有10mm的棒状晶种(称籽晶)浸入融液中，把晶种微微的旋转向上提升，融液中的硅原子会在前面形成的单晶体上继续结晶，并延续其规则的原子排列结构。若整个结晶环境稳定，就可以周而复始的形成结晶，最后形成一根圆柱形的原子排列整齐的硅单晶晶体，即硅单晶硅锭。
熔融硅装在石英坩埚内，并被多种杂质污染，其中一种是氧。在硅的熔融温度下，氧渗入晶格，直到其达到一预定浓度，该浓度一般由硅熔融温度下硅中氧的溶解度和凝固硅中氧的实际偏析系数确定。晶体生长过程中渗入硅锭中的氧的浓度大于半导体器件制造中所用的典型温度下凝固硅中氧的溶解度。随着晶体从熔融硅中生长并冷却，其中的氧溶解度迅速降低，氧在冷却的硅锭中饱和。
硅锭被切割成晶片。晶片中残留的间隙氧在后续热制程过程中生长成氧淀析。器件有源区中氧淀析的出现可以降低栅极氧化物的完整性，并且导致不必要的衬底漏电流。
发明内容
本发明的目的在于提供一种单晶硅锭及晶圆的形成方法，能够减少氧杂质的形成，提高后续器件的性能。
为了实现上述目的，本发明提出了一种单晶硅锭的形成方法，包括步骤：
提供多晶硅碎块，将所述多晶硅碎块放入坩埚中进行融化并通入气体，所述气体包括氘原子；
采用加磁场直拉法形成单晶硅锭。
进一步的，在所述的单晶硅锭的形成方法中，通入气体为氘气。
进一步的，在所述的单晶硅锭的形成方法中，通入气体为氘气和氩气的混合气体。
进一步的，在所述的单晶硅锭的形成方法中，所述氘气与氩气的比例范围为0.1％～99％。
进一步的，在所述的单晶硅锭的形成方法中，所述加磁场直拉法包括步骤：
将所述掺杂后的所述多晶硅碎块放入坩埚中以预定温度进行融化；
采用籽晶以预定拉晶速率向上拉晶，待细晶长度达到预定长度时，降低拉晶速率进入放肩步骤；
在所述放肩步骤中降低拉速，维持一个线性降温速率，形成预定直径的单晶硅锭后，进入转肩等径步骤；
待单晶硅锭直径生长至预定要求后，迅速向上提升，及时降温，同时停止线性降温，给予坩埚上升速率，根据直径变化率速度，缓慢调节拉速控制，待单晶硅锭直径相对稳定后，打开自动等径控制程序，进入自动等径控制阶段。
进一步的，在所述的单晶硅锭的形成方法中，所述单晶硅锭的直径大小由所述拉晶速率和预定温度控制。
进一步的，在所述的单晶硅锭的形成方法中，加入磁场,其强度为1000～5000高斯。
在本发明中，还提出了一种晶圆的形成方法，采用单晶硅锭作为原始材料形成晶圆，所述单晶硅锭采用如上文所述的单晶硅锭的形成方法形成，所述晶圆含氘掺杂原子。
进一步的，在所述的晶圆的形成方法中，包括步骤：
对所述单晶硅锭依次进行切薄、表面磨削、抛光、边缘处理及清洗处理，形成晶圆。
与现有技术相比，本发明的有益效果主要体现在：在采用直拉法形成单晶硅锭时，对熔融状的硅中通入包含氘原子的气体，使氘原子存储在单晶硅锭的间隙中，降低氧元素及其他杂志的含量，采用单晶硅锭形成晶圆后，在晶圆上形成的器件时，氘能够扩散出，并与界面处等悬空键进行结合，形成较为稳定的结构，从而避免热载流子的穿透，降低漏电流，提高器件的性能与可靠性。
附图说明
图1为本发明一实施例中单晶硅锭的形成方法的流程图。
具体实施方式
下面将结合示意图对本发明的单晶硅锭及晶圆的形成方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述公知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
在本实施例中，提出了一种单晶硅锭的形成方法，包括步骤：
S100：提供多晶硅碎块，将所述多晶硅碎块放入坩埚中进行融化并通入气体，所述气体包括氘原子；
S200：采用加磁场直拉法形成单晶硅锭。
在步骤S100中，所述硅片可以为多晶硅或者含有杂质的硅片，使用该种硅片进行提炼，首先需要将硅片放入石英坩埚中进行融化，以便后续形成单晶硅锭，去除部分杂质。具体的，融化温度及工艺均与现有技术中的类似，在此不作赘述。
对融化后的多晶硅碎块进行气体的注入，所述气体包括氘原子；具体的，所述气体可以为单纯的氘气，或者为氘气和氩气的混合气体。若为氘气和氩气的混合气体，则氘气与氩气的比例范围为0.1％～99％，例如是50％，具体的，可以根据工艺的要求来决定，在此不作限定。
在进行加磁场直拉法形成单晶硅锭时，对被融化的多晶硅碎块进行氘原子的掺杂，使氘原子存储在单晶硅锭的间隙中，降低氧元素和杂质的含量，有利于提升后续器件的性能。
在步骤S300中，采用加磁场直拉法形成单晶硅锭。
其中，所述加磁场直拉法包括步骤：
将所述掺杂后的所述多晶硅碎块放入坩埚中以预定温度进行融化；
采用籽晶以预定拉晶速率向上拉晶，待细晶长度达到预定长度时，降低拉晶速率进入放肩步骤；
在所述放肩步骤中降低拉速，维持一个线性降温速率，形成预定直径的单晶硅锭后，进入转肩等径步骤；
待单晶硅锭直径生长至预定要求后，迅速向上提升，及时降温，同时停止线性降温，给予坩埚上升速率，根据直径变化率速度，缓慢调节拉速控制，待单晶硅锭直径相对稳定后，打开自动等径控制程序，进入自动等径控制阶段。
其中，所述单晶硅锭的直径大小由所述拉晶速率和预定温度控制。单晶硅锭的直径大小可以根据工艺的需要来决定，在此不作限定。其中，添加的磁场强度为1000～5000高斯，例如是3000高斯。
在本实施例的另一方面，还提出了一种晶圆的形成方法，采用单晶硅锭作为原始材料形成晶圆，所述单晶硅锭采用如上文所述的单晶硅锭的形成方法形成，所述晶圆含氘掺杂原子。
具体的，所述晶圆的形成方法包括步骤：
对所述单晶硅锭依次进行切薄、表面磨削、抛光、边缘处理及清洗处理，形成晶圆。
后续可以在晶圆上形成器件，由于氘原子存储在晶圆的间隙中，降低了氧原子和其他杂质的含量，从而可以在后续的热制程过程中避免氧淀析，进而可以保护器件有源区中栅极氧化物的完整性，并且减少不必要的衬底漏电流。
综上，在本发明实施例提供的单晶硅锭及晶圆的形成方法中，在采用直拉法形成单晶硅锭时，对熔融状的硅中通入包含氘原子的气体，使氘原子存储在单晶硅锭的间隙中，降低氧元素及其他杂志的含量，采用单晶硅锭形成晶圆后，在晶圆上形成的器件时，氘能够扩散出，并与界面处等悬空键进行结合，形成较为稳定的结构，从而避免热载流子的穿透，降低漏电流，提高器件的性能与可靠性。
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。

Claims (9)

1.一种单晶硅锭的形成方法，其特征在于，包括步骤：
提供多晶硅碎块，将所述多晶硅碎块放入坩埚中进行融化并通入气体，所述气体包括氘原子；
采用加磁场直拉法形成单晶硅锭。
2.如权利要求1所述的单晶硅锭的形成方法，其特征在于，通入气体为氘气。
3.如权利要求1所述的单晶硅锭的形成方法，其特征在于，通入气体为氘气和氩气的混合气体。
4.如权利要求3所述的单晶硅锭的形成方法，其特征在于，所述氘气与氩气的比例范围为0.1％～99％。
5.如权利要求1所述的单晶硅锭的形成方法，其特征在于，所述加磁场直拉法包括步骤：
将所述掺杂后的所述多晶硅碎块放入坩埚中以预定温度进行融化；
采用籽晶以预定拉晶速率向上拉晶，待细晶长度达到预定长度时，降低拉晶速率进入放肩步骤；
在所述放肩步骤中降低拉速，维持一个线性降温速率，形成预定直径的单晶硅锭后，进入转肩等径步骤；
待单晶硅锭直径生长至预定要求后，迅速向上提升，及时降温，同时停止线性降温，给予坩埚上升速率，根据直径变化率速度，缓慢调节拉速控制，待单晶硅锭直径相对稳定后，打开自动等径控制程序，进入自动等径控制阶段。
6.如权利要求5所述的单晶硅锭的形成方法，其特征在于，所述单晶硅锭的直径大小由所述拉晶速率和预定温度控制。
7.如权利要求5所述的单晶硅锭的形成方法，其特征在于，所述磁场强度为1000～5000高斯。
8.一种晶圆的形成方法，采用单晶硅锭作为原始材料形成晶圆，其特征在于，所述单晶硅锭采用如权利要求1至6中任一项所述的单晶硅锭的形成方法形成，所述晶圆含氘掺杂原子。
9.如权利要求8所述的晶圆的形成方法，其特征在于，包括步骤：
对所述单晶硅锭依次进行切薄、表面磨削、抛光、边缘处理及清洗处理，形成晶圆。
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