SG11202100586PA - Slurry, polishing solution production method, and polishing method - Google Patents

Slurry, polishing solution production method, and polishing method

Info

Publication number
SG11202100586PA
SG11202100586PA SG11202100586PA SG11202100586PA SG11202100586PA SG 11202100586P A SG11202100586P A SG 11202100586PA SG 11202100586P A SG11202100586P A SG 11202100586PA SG 11202100586P A SG11202100586P A SG 11202100586PA SG 11202100586P A SG11202100586P A SG 11202100586PA
Authority
SG
Singapore
Prior art keywords
polishing
slurry
solution production
production method
polishing solution
Prior art date
Application number
SG11202100586PA
Other languages
English (en)
Inventor
Tomomi Kukita
Tomohiro Iwano
Takaaki Matsumoto
Tomoyasu Hasegawa
Original Assignee
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Publication of SG11202100586PA publication Critical patent/SG11202100586PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
SG11202100586PA 2018-07-26 2018-09-25 Slurry, polishing solution production method, and polishing method SG11202100586PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2018/028105 WO2020021680A1 (ja) 2018-07-26 2018-07-26 スラリ及び研磨方法
PCT/JP2018/035443 WO2020021731A1 (ja) 2018-07-26 2018-09-25 スラリ、研磨液の製造方法、及び、研磨方法

Publications (1)

Publication Number Publication Date
SG11202100586PA true SG11202100586PA (en) 2021-03-30

Family

ID=69180670

Family Applications (6)

Application Number Title Priority Date Filing Date
SG11202100586PA SG11202100586PA (en) 2018-07-26 2018-09-25 Slurry, polishing solution production method, and polishing method
SG11202100636YA SG11202100636YA (en) 2018-07-26 2018-09-25 Slurry, screening method, and polishing method
SG11202100610RA SG11202100610RA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100589TA SG11202100589TA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100567YA SG11202100567YA (en) 2018-07-26 2018-09-25 Slurry, method for producing polishing liquid, and polishing method
SG11202100627YA SG11202100627YA (en) 2018-07-26 2019-07-22 Slurry, and polishing method

Family Applications After (5)

Application Number Title Priority Date Filing Date
SG11202100636YA SG11202100636YA (en) 2018-07-26 2018-09-25 Slurry, screening method, and polishing method
SG11202100610RA SG11202100610RA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100589TA SG11202100589TA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100567YA SG11202100567YA (en) 2018-07-26 2018-09-25 Slurry, method for producing polishing liquid, and polishing method
SG11202100627YA SG11202100627YA (en) 2018-07-26 2019-07-22 Slurry, and polishing method

Country Status (7)

Country Link
US (6) US11505731B2 (zh)
JP (6) JP6989020B2 (zh)
KR (6) KR102589117B1 (zh)
CN (6) CN112640052A (zh)
SG (6) SG11202100586PA (zh)
TW (6) TWI804659B (zh)
WO (7) WO2020021680A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
CN112740366A (zh) * 2018-09-25 2021-04-30 昭和电工材料株式会社 浆料及研磨方法
US20230191554A1 (en) * 2020-04-27 2023-06-22 Konica Minolta, Inc. Polishing system
KR102453292B1 (ko) * 2020-07-07 2022-10-12 주식회사 나노신소재 산화세륨 복합분말의 분산 조성물
EP4053882A4 (en) * 2021-01-06 2022-10-26 Showa Denko Materials Co., Ltd. POLISHING FLUID, POLISHING FLUID SET AND POLISHING METHOD
US11650939B2 (en) * 2021-02-02 2023-05-16 Dell Products L.P. Managing access to peripherals in a containerized environment

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941430B1 (zh) 1970-08-25 1974-11-08
JP2524020B2 (ja) * 1990-08-20 1996-08-14 株式会社日立製作所 液中微粒子付着制御法
US5409544A (en) * 1990-08-20 1995-04-25 Hitachi, Ltd. Method of controlling adhesion of fine particles to an object in liquid
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
TW311905B (zh) 1994-07-11 1997-08-01 Nissan Chemical Ind Ltd
KR100336598B1 (ko) 1996-02-07 2002-05-16 이사오 우치가사키 산화 세륨 연마제 제조용 산화 세륨 입자
JPH10154672A (ja) * 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
TW571361B (en) * 2001-02-20 2004-01-11 Hitachi Chemical Co Ltd Polishing agent and method for polishing a substrate
JPWO2002067309A1 (ja) * 2001-02-20 2004-06-24 日立化成工業株式会社 研磨剤及び基板の研磨方法
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
KR20040080935A (ko) * 2002-02-20 2004-09-20 니혼 미크로 코팅 가부시끼 가이샤 연마 슬러리
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6939211B2 (en) 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US7112123B2 (en) 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US20050119360A1 (en) 2003-11-28 2005-06-02 Kabushiki Kaisha Kobe Seiko Sho Method for producing porous material
JP2006249129A (ja) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd 研磨剤の製造方法及び研磨剤
US7655057B2 (en) 2005-08-31 2010-02-02 Fujimi Incorporated Polishing composition and polishing method
JP5105869B2 (ja) 2006-04-27 2012-12-26 花王株式会社 研磨液組成物
JP2013141041A (ja) * 2006-10-04 2013-07-18 Hitachi Chemical Co Ltd 基板の研磨方法
JP2008112990A (ja) 2006-10-04 2008-05-15 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP5281758B2 (ja) * 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
EP2260013B1 (en) * 2008-02-12 2018-12-19 Saint-Gobain Ceramics & Plastics, Inc. Ceria material and method of forming same
KR101184731B1 (ko) * 2008-03-20 2012-09-20 주식회사 엘지화학 산화세륨 제조 방법, 이로부터 얻어진 산화세륨 및 이를 포함하는 ｃｍｐ슬러리
CN101550318B (zh) * 2008-04-03 2012-11-14 北京有色金属研究总院 一种含Ce3+的稀土抛光粉及其制备方法
CN105368397B (zh) 2008-04-23 2017-11-03 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
JP5287174B2 (ja) * 2008-04-30 2013-09-11 日立化成株式会社 研磨剤及び研磨方法
KR101678114B1 (ko) * 2008-09-26 2016-11-21 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
JP2010153781A (ja) 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2010153782A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
CN103342986B (zh) 2008-12-11 2015-01-07 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
KR20140027561A (ko) * 2009-06-09 2014-03-06 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기판의 연마 방법
KR101380098B1 (ko) 2009-07-16 2014-04-01 히타치가세이가부시끼가이샤 팔라듐 연마용 ｃｍｐ 연마액 및 연마 방법
JP2011054906A (ja) 2009-09-04 2011-03-17 Hitachi Chem Co Ltd スラリーの保存方法及び保存容器
CN102473622B (zh) 2009-10-22 2013-10-16 日立化成株式会社 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法
JP2011142284A (ja) 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
SG188460A1 (en) 2010-09-08 2013-04-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
US9039796B2 (en) 2010-11-22 2015-05-26 Hitachi Chemical Company, Ltd. Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
JP5590144B2 (ja) * 2010-11-22 2014-09-17 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基板の研磨方法
SG190058A1 (en) * 2010-11-22 2013-06-28 Hitachi Chemical Co Ltd Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103339219B (zh) 2011-01-25 2015-01-14 日立化成株式会社 Cmp研磨液及其制造方法、复合粒子的制造方法以及基体的研磨方法
JP2012186339A (ja) 2011-03-07 2012-09-27 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JPWO2013035545A1 (ja) * 2011-09-09 2015-03-23 旭硝子株式会社 研磨砥粒およびその製造方法、研磨スラリー並びにガラス製品の製造方法
JP2015088495A (ja) 2012-02-21 2015-05-07 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
KR102137293B1 (ko) 2012-08-30 2020-07-23 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
JP2014060205A (ja) 2012-09-14 2014-04-03 Fujimi Inc 研磨用組成物
WO2014061417A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 Ｃｍｐ用研磨液、貯蔵液及び研磨方法
JP6139975B2 (ja) 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
WO2014199739A1 (ja) 2013-06-12 2014-12-18 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US10047262B2 (en) * 2013-06-27 2018-08-14 Konica Minolta, Inc. Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method
US10131819B2 (en) * 2013-08-30 2018-11-20 Hitachi Chemical Company, Ltd Slurry, polishing solution set, polishing solution, and substrate polishing method
WO2015052988A1 (ja) 2013-10-10 2015-04-16 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
JP6223786B2 (ja) * 2013-11-12 2017-11-01 花王株式会社 硬脆材料用研磨液組成物
KR102138406B1 (ko) 2013-12-26 2020-07-27 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
JP6360311B2 (ja) 2014-01-21 2018-07-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
SG11201610969UA (en) * 2014-07-09 2017-02-27 Hitachi Chemical Co Ltd Cmp polishing liquid, and polishing method
KR101613359B1 (ko) * 2014-07-15 2016-04-27 에스케이하이닉스 주식회사 화학적 기계적 연마용 나노 세리아 슬러리 조성물 및 이의 제조방법
JP6435689B2 (ja) 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US20170183537A1 (en) 2014-08-26 2017-06-29 K.C. Tech Co., Ltd Polishing slurry composition
JP5893700B1 (ja) * 2014-09-26 2016-03-23 花王株式会社 酸化珪素膜用研磨液組成物
JP2016069535A (ja) 2014-09-30 2016-05-09 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法
US9422455B2 (en) 2014-12-12 2016-08-23 Cabot Microelectronics Corporation CMP compositions exhibiting reduced dishing in STI wafer polishing
JP2016154208A (ja) 2015-02-12 2016-08-25 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
KR102583709B1 (ko) 2015-03-10 2023-09-26 가부시끼가이샤 레조낙 연마제, 연마제용 저장액 및 연마 방법
KR101773543B1 (ko) * 2015-06-30 2017-09-01 유비머트리얼즈주식회사 연마 입자, 연마 슬러리 및 연마 입자의 제조 방법
KR101761792B1 (ko) * 2015-07-02 2017-07-26 주식회사 케이씨텍 Sti 연마용 슬러리 조성물
US11046869B2 (en) * 2015-09-09 2021-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and substrate polishing method
JP6570382B2 (ja) * 2015-09-09 2019-09-04 デンカ株式会社 研磨用シリカ添加剤及びそれを用いた方法
JP6645136B2 (ja) * 2015-11-20 2020-02-12 日立化成株式会社 半導体基板の製造方法及び洗浄液
JP2017110177A (ja) 2015-12-14 2017-06-22 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
KR101737938B1 (ko) 2015-12-15 2017-05-19 주식회사 케이씨텍 다기능성 연마 슬러리 조성물
JP6589622B2 (ja) * 2015-12-22 2019-10-16 日立化成株式会社 研磨液、研磨方法、半導体基板及び電子機器
KR101761789B1 (ko) 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
KR20180112004A (ko) 2016-02-16 2018-10-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 시스템 및 그의 제조 방법 및 사용 방법
JP2017203076A (ja) 2016-05-10 2017-11-16 日立化成株式会社 Ｃｍｐ研磨剤及びこれを用いた研磨方法
US20190256742A1 (en) * 2016-07-15 2019-08-22 Fujimi Incorporated Polishing composition, method for producing polishing composition, and polishing method
KR101823083B1 (ko) 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
JP6720791B2 (ja) 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
KR20190055112A (ko) * 2016-09-29 2019-05-22 카오카부시키가이샤 연마액 조성물
KR102619722B1 (ko) 2016-10-27 2024-01-02 삼성디스플레이 주식회사 트랜지스터 표시판의 제조 방법 및 이에 이용되는 연마 슬러리
KR102268320B1 (ko) * 2016-11-14 2021-06-22 니끼 쇼꾸바이 카세이 가부시키가이샤 세리아계 복합미립자 분산액, 그의 제조방법 및 세리아계 복합미립자 분산액을 포함하는 연마용 지립분산액
WO2019035161A1 (ja) 2017-08-14 2019-02-21 日立化成株式会社 研磨液、研磨液セット及び研磨方法
JP7071495B2 (ja) * 2017-11-15 2022-05-19 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 材料除去操作を行うための組成物及びその形成方法
JP6973620B2 (ja) * 2018-03-22 2021-12-01 昭和電工マテリアルズ株式会社 研磨液、研磨液セット及び研磨方法
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
CN112740366A (zh) * 2018-09-25 2021-04-30 昭和电工材料株式会社 浆料及研磨方法

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