SG11202008680WA - Slurry, slurry set and polishing method - Google Patents
Slurry, slurry set and polishing methodInfo
- Publication number
- SG11202008680WA SG11202008680WA SG11202008680WA SG11202008680WA SG11202008680WA SG 11202008680W A SG11202008680W A SG 11202008680WA SG 11202008680W A SG11202008680W A SG 11202008680WA SG 11202008680W A SG11202008680W A SG 11202008680WA SG 11202008680W A SG11202008680W A SG 11202008680WA
- Authority
- SG
- Singapore
- Prior art keywords
- slurry
- polishing method
- slurry set
- polishing
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/011464 WO2019180887A1 (en) | 2018-03-22 | 2018-03-22 | Polishing liquid, polishing liquid set, and polishing method |
PCT/JP2018/028105 WO2020021680A1 (en) | 2018-07-26 | 2018-07-26 | Slurry and polishing method |
PCT/JP2018/035458 WO2019181014A1 (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
PCT/JP2019/011872 WO2019182063A1 (en) | 2018-03-22 | 2019-03-20 | Slurry, slurry set and polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202008680WA true SG11202008680WA (en) | 2020-10-29 |
Family
ID=67986825
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008797WA SG11202008797WA (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
SG11202009064XA SG11202009064XA (en) | 2018-03-22 | 2019-03-20 | Polishing liquid, polishing liquid set, and polishing method |
SG11202008680WA SG11202008680WA (en) | 2018-03-22 | 2019-03-20 | Slurry, slurry set and polishing method |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008797WA SG11202008797WA (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
SG11202009064XA SG11202009064XA (en) | 2018-03-22 | 2019-03-20 | Polishing liquid, polishing liquid set, and polishing method |
Country Status (7)
Country | Link |
---|---|
US (3) | US11572490B2 (en) |
JP (2) | JP6973620B2 (en) |
KR (3) | KR102576637B1 (en) |
CN (3) | CN111819263A (en) |
SG (3) | SG11202008797WA (en) |
TW (2) | TWI734971B (en) |
WO (4) | WO2019181013A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020021680A1 (en) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
KR20210076571A (en) * | 2019-12-16 | 2021-06-24 | 주식회사 케이씨텍 | Slurry composition for sti process |
WO2022070314A1 (en) * | 2020-09-30 | 2022-04-07 | 昭和電工マテリアルズ株式会社 | Slurry and polishing method |
US20230145080A1 (en) * | 2020-11-11 | 2023-05-11 | Showa Denko Materials Co., Ltd. | Polishing liquid and polishing method |
EP4053882A4 (en) * | 2021-01-06 | 2022-10-26 | Showa Denko Materials Co., Ltd. | Polishing fluid, polishing fluid set, and polishing method |
CN113231919A (en) * | 2021-05-10 | 2021-08-10 | 南通瑞景光电科技有限公司 | Environment-friendly grinding process for optical element |
WO2023127775A1 (en) * | 2021-12-28 | 2023-07-06 | 株式会社レゾナック | Composition, polishing agent and method for polishing base material |
CN115446718A (en) * | 2022-07-19 | 2022-12-09 | 北京博海康源医疗器械有限公司 | System and method for polishing and deburring surface of scalpel |
WO2024080833A1 (en) * | 2022-10-13 | 2024-04-18 | 솔브레인 주식회사 | Slurry composition for chemical mechanical polishing and manufacturing method therefor |
CN115710464A (en) * | 2022-11-11 | 2023-02-24 | 博力思(天津)电子科技有限公司 | Silicon oxide dielectric layer chemical mechanical polishing solution with low surface roughness |
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KR101823083B1 (en) | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | Surface-modified colloidal ceria abrasive particle, preparing method of the same and polishing slurry composition comprising the same |
JP6720791B2 (en) | 2016-09-13 | 2020-07-08 | Agc株式会社 | Abrasive, polishing method, and polishing additive |
KR102619722B1 (en) | 2016-10-27 | 2024-01-02 | 삼성디스플레이 주식회사 | Method of manufacturing transistor array panel and polishing slurry used the same |
WO2019035161A1 (en) * | 2017-08-14 | 2019-02-21 | 日立化成株式会社 | Polishing liquid, polishing liquid set and polishing method |
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2018
- 2018-09-25 JP JP2020507311A patent/JP6973620B2/en active Active
- 2018-09-25 WO PCT/JP2018/035456 patent/WO2019181013A1/en active Application Filing
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US20210054233A1 (en) | 2021-02-25 |
US11767448B2 (en) | 2023-09-26 |
TW201940651A (en) | 2019-10-16 |
CN111868202B (en) | 2021-12-21 |
TW201940617A (en) | 2019-10-16 |
WO2019181013A1 (en) | 2019-09-26 |
JP7067614B2 (en) | 2022-05-16 |
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WO2019181016A1 (en) | 2019-09-26 |
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SG11202009064XA (en) | 2020-10-29 |
KR20200128742A (en) | 2020-11-16 |
US20210017422A1 (en) | 2021-01-21 |
SG11202008797WA (en) | 2020-10-29 |
CN111868202A (en) | 2020-10-30 |
JPWO2019182063A1 (en) | 2021-02-25 |
KR20200118186A (en) | 2020-10-14 |
TWI786281B (en) | 2022-12-11 |
CN111868203A (en) | 2020-10-30 |
WO2019182063A1 (en) | 2019-09-26 |
US11572490B2 (en) | 2023-02-07 |
TW201940652A (en) | 2019-10-16 |
KR102520409B1 (en) | 2023-04-11 |
WO2019181014A1 (en) | 2019-09-26 |
JPWO2019181013A1 (en) | 2021-02-04 |
TWI734971B (en) | 2021-08-01 |
JP6973620B2 (en) | 2021-12-01 |
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