SG11201610969UA - Cmp polishing liquid, and polishing method - Google Patents

Cmp polishing liquid, and polishing method

Info

Publication number
SG11201610969UA
SG11201610969UA SG11201610969UA SG11201610969UA SG11201610969UA SG 11201610969U A SG11201610969U A SG 11201610969UA SG 11201610969U A SG11201610969U A SG 11201610969UA SG 11201610969U A SG11201610969U A SG 11201610969UA SG 11201610969U A SG11201610969U A SG 11201610969UA
Authority
SG
Singapore
Prior art keywords
polishing
cmp
liquid
polishing liquid
polishing method
Prior art date
Application number
SG11201610969UA
Inventor
Takashi Shinoda
Munehiro Oota
Nao Yamamura
Aiko Kino
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201610969UA publication Critical patent/SG11201610969UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201610969UA 2014-07-09 2015-07-03 Cmp polishing liquid, and polishing method SG11201610969UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014141670 2014-07-09
JP2014141673 2014-07-09
PCT/JP2015/069297 WO2016006553A1 (en) 2014-07-09 2015-07-03 Cmp polishing liquid, and polishing method

Publications (1)

Publication Number Publication Date
SG11201610969UA true SG11201610969UA (en) 2017-02-27

Family

ID=55064189

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610969UA SG11201610969UA (en) 2014-07-09 2015-07-03 Cmp polishing liquid, and polishing method

Country Status (7)

Country Link
US (1) US20170210958A1 (en)
JP (1) JPWO2016006553A1 (en)
KR (1) KR20170032335A (en)
CN (1) CN106471090A (en)
SG (1) SG11201610969UA (en)
TW (1) TW201606065A (en)
WO (1) WO2016006553A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6418174B2 (en) * 2016-02-03 2018-11-07 株式会社Sumco Silicon wafer single side polishing method
WO2018179061A1 (en) * 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
JP6708994B2 (en) 2017-03-27 2020-06-10 日立化成株式会社 Slurry and polishing method
IL271182B2 (en) 2017-06-15 2023-03-01 Rhodia Operations Cerium based particles
US11655394B2 (en) * 2017-08-09 2023-05-23 Resonac Corporation Polishing solution and polishing method
KR102399744B1 (en) * 2017-08-14 2022-05-18 쇼와덴코머티리얼즈가부시끼가이샤 Polishing liquid, polishing liquid set and polishing method
CN107910293B (en) * 2017-11-10 2020-06-30 上海华力微电子有限公司 Method for improving flatness of photoetching filling material
JP7421855B2 (en) * 2018-03-02 2024-01-25 Ａｇｃ株式会社 Abrasives, polishing methods, and additives for polishing
WO2020021680A1 (en) * 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
US11572490B2 (en) 2018-03-22 2023-02-07 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and polishing method
EP4048748A4 (en) 2019-10-22 2023-11-08 CMC Materials, Inc. Composition and method for selective oxide cmp
JP2023504005A (en) 2019-11-26 2023-02-01 ローディア オペレーションズ Liquid dispersions and powders of cerium-based core-shell particles, methods for making same and their use in polishing
CN113004796A (en) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution
US20230094224A1 (en) * 2020-01-16 2023-03-30 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
WO2022070313A1 (en) * 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 Slurry and polishing method
CN114621682A (en) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 Chemical mechanical polishing solution and use method thereof
JP2024519796A (en) 2021-05-17 2024-05-21 ローディア オペレーションズ Liquid dispersions and powders of cerium-based core-shell particles, methods for producing same and their use in polishing
WO2023013059A1 (en) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Cmp polishing liquid, cmp polishing liquid set, and polishing method
WO2024111032A1 (en) * 2022-11-21 2024-05-30 株式会社レゾナック Cmp polishing liquid, cmp polishing liquid set, and polishing method
WO2024161602A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing liquid set, polishing method, component manufacturing method, and semiconductor component manufacturing method
WO2024161614A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing method, component production method, and semiconductor component production method
WO2024161603A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing liquid set, polishing method, component production method, and semiconductor component production method

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JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
JPH11181403A (en) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd Cerium oxide abrasive and grinding of substrate
KR100725699B1 (en) * 2005-09-02 2007-06-07 주식회사 엘지화학 Cerium oxide powder for one-component cmp slurry, preparation method thereof, one-component cmp slurry composition comprising the same, and method of shallow trench isolation using the slurry
WO2009102615A2 (en) * 2008-02-12 2009-08-20 Saint-Gobain Ceramics & Plastics, Inc. Ceria material and method of forming same
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
EP2329519B1 (en) 2008-09-26 2013-10-23 Rhodia Opérations Abrasive compositions for chemical mechanical polishing and methods for using same
JP2010095650A (en) * 2008-10-17 2010-04-30 Hitachi Chem Co Ltd Abrasives composition and method for polishing substrates using the same
CN103342986B (en) * 2008-12-11 2015-01-07 日立化成株式会社 Polishing solution for CMP and polishing method using same
US8853082B2 (en) * 2009-12-28 2014-10-07 Hitachi Chemical Company, Ltd. Polishing liquid for CMP and polishing method using the same
JP2011171446A (en) * 2010-02-17 2011-09-01 Hitachi Chem Co Ltd Polishing liquid for cmp and polishing method using the same
JP2013038211A (en) * 2011-08-08 2013-02-21 Hitachi Chem Co Ltd Polishing liquid for cmp and polishing method using the same
WO2014034358A1 (en) * 2012-08-30 2014-03-06 日立化成株式会社 Polishing agent, polishing agent set and method for polishing base

Also Published As

Publication number Publication date
TW201606065A (en) 2016-02-16
JPWO2016006553A1 (en) 2017-05-25
KR20170032335A (en) 2017-03-22
CN106471090A (en) 2017-03-01
US20170210958A1 (en) 2017-07-27
WO2016006553A1 (en) 2016-01-14

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