SG11201702215RA - Polishing composition, method for manufacturing same, and polishing method - Google Patents

Polishing composition, method for manufacturing same, and polishing method

Info

Publication number
SG11201702215RA
SG11201702215RA SG11201702215RA SG11201702215RA SG11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA SG 11201702215R A SG11201702215R A SG 11201702215RA
Authority
SG
Singapore
Prior art keywords
polishing
manufacturing same
polishing composition
composition
manufacturing
Prior art date
Application number
SG11201702215RA
Inventor
Takeki Sato
Koichi Sakabe
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201702215RA publication Critical patent/SG11201702215RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
SG11201702215RA 2014-09-30 2015-07-27 Polishing composition, method for manufacturing same, and polishing method SG11201702215RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014200720A JP2016069535A (en) 2014-09-30 2014-09-30 Polishing composition and producing method thereof and polishing method
PCT/JP2015/003754 WO2016051636A1 (en) 2014-09-30 2015-07-27 Polishing composition, method for manufacturing same, and polishing method

Publications (1)

Publication Number Publication Date
SG11201702215RA true SG11201702215RA (en) 2017-04-27

Family

ID=55629716

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201702215RA SG11201702215RA (en) 2014-09-30 2015-07-27 Polishing composition, method for manufacturing same, and polishing method

Country Status (7)

Country Link
US (1) US20170292039A1 (en)
JP (1) JP2016069535A (en)
KR (1) KR20170063598A (en)
CN (1) CN106795421A (en)
SG (1) SG11201702215RA (en)
TW (1) TW201621023A (en)
WO (1) WO2016051636A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018179064A1 (en) 2017-03-27 2018-10-04 日立化成株式会社 Slurry and polishing method
WO2018179061A1 (en) 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
US20190211228A1 (en) * 2018-01-09 2019-07-11 Cabot Microelectronics Corporation Tungsten bulk polishing method with improved topography
WO2020021680A1 (en) 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
WO2019181013A1 (en) * 2018-03-22 2019-09-26 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
JP7073975B2 (en) * 2018-08-07 2022-05-24 Jsr株式会社 Aqueous dispersion for chemical mechanical polishing
JP7120846B2 (en) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド Polishing composition, method for producing same, method for polishing, and method for producing substrate
JP7254603B2 (en) * 2019-04-22 2023-04-10 扶桑化学工業株式会社 Colloidal silica for metal polishing
JP2021150515A (en) * 2020-03-19 2021-09-27 株式会社フジミインコーポレーテッド Polishing method and method for manufacturing semiconductor substrate
JP2022052548A (en) * 2020-09-23 2022-04-04 株式会社フジミインコーポレーテッド Polishing composition
CN112680186A (en) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 Surface-modified silicon dioxide and preparation method of abrasive composition containing same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06313164A (en) * 1993-04-28 1994-11-08 Fujimi Inkooporeetetsudo:Kk Polishing composition
WO1998054756A1 (en) * 1997-05-26 1998-12-03 Hitachi, Ltd. Polishing method and semiconductor device manufacturing method using the same
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7316976B2 (en) * 2004-05-19 2008-01-08 Dupont Air Products Nanomaterials Llc Polishing method to reduce dishing of tungsten on a dielectric
JP2008135453A (en) * 2006-11-27 2008-06-12 Fujimi Inc Polishing composite and polishing method
JP2013138053A (en) * 2011-12-28 2013-07-11 Fujimi Inc Polishing composition

Also Published As

Publication number Publication date
TW201621023A (en) 2016-06-16
US20170292039A1 (en) 2017-10-12
JP2016069535A (en) 2016-05-09
WO2016051636A1 (en) 2016-04-07
CN106795421A (en) 2017-05-31
KR20170063598A (en) 2017-06-08

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