SG11202001013YA - Polishing liquid, polishing liquid set and polishing method - Google Patents

Polishing liquid, polishing liquid set and polishing method

Info

Publication number
SG11202001013YA
SG11202001013YA SG11202001013YA SG11202001013YA SG11202001013YA SG 11202001013Y A SG11202001013Y A SG 11202001013YA SG 11202001013Y A SG11202001013Y A SG 11202001013YA SG 11202001013Y A SG11202001013Y A SG 11202001013YA SG 11202001013Y A SG11202001013Y A SG 11202001013YA
Authority
SG
Singapore
Prior art keywords
polishing
polishing liquid
liquid
liquid set
polishing method
Prior art date
Application number
SG11202001013YA
Inventor
Masayuki Hanano
Toshio Takizawa
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11202001013YA publication Critical patent/SG11202001013YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
SG11202001013YA 2017-08-14 2017-08-14 Polishing liquid, polishing liquid set and polishing method SG11202001013YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/029288 WO2019035161A1 (en) 2017-08-14 2017-08-14 Polishing liquid, polishing liquid set and polishing method

Publications (1)

Publication Number Publication Date
SG11202001013YA true SG11202001013YA (en) 2020-03-30

Family

ID=65362795

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001013YA SG11202001013YA (en) 2017-08-14 2017-08-14 Polishing liquid, polishing liquid set and polishing method

Country Status (7)

Country Link
US (1) US11649377B2 (en)
JP (1) JP6943284B2 (en)
KR (2) KR102399744B1 (en)
CN (1) CN110998800B (en)
SG (1) SG11202001013YA (en)
TW (1) TWI780194B (en)
WO (1) WO2019035161A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018179064A1 (en) 2017-03-27 2018-10-04 日立化成株式会社 Slurry and polishing method
WO2018179061A1 (en) 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
WO2019043819A1 (en) * 2017-08-30 2019-03-07 日立化成株式会社 Slurry and polishing method
JP7421855B2 (en) * 2018-03-02 2024-01-25 Ａｇｃ株式会社 Abrasives, polishing methods, and additives for polishing
WO2020021680A1 (en) * 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
SG11202008797WA (en) 2018-03-22 2020-10-29 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and polishing method
US10727076B2 (en) * 2018-10-25 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Slurry and manufacturing semiconductor using the slurry
CN113977788A (en) * 2021-12-13 2022-01-28 赣州鑫业工艺有限公司 Multimedia crystal ball ornament and preparation method thereof

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03278532A (en) 1990-03-28 1991-12-10 Yokogawa Electric Corp Manufacture of semiconductor device
JP3278532B2 (en) 1994-07-08 2002-04-30 株式会社東芝 Method for manufacturing semiconductor device
JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
JP2003313542A (en) * 2002-04-22 2003-11-06 Jsr Corp Aqueous dispersion for chemomechanical polishing use
JP2005294798A (en) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd Abrasive and polishing method
CN102585765B (en) * 2004-07-23 2015-01-21 日立化成株式会社 Cmp polishing agent and method for polishing substrate
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
JP4755984B2 (en) * 2004-09-28 2011-08-24 日立化成工業株式会社 CMP polishing agent and substrate polishing method
WO2007046420A1 (en) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. Cerium oxide slurry, cerium oxide polishing liquid, and method for polishing substrate by using those
CN100587918C (en) * 2005-11-11 2010-02-03 日立化成工业株式会社 Grinding agent for silicon oxide, added liquid, and grinding method
CN101511538A (en) * 2006-09-15 2009-08-19 日立化成工业株式会社 CMP polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution
EP2090400A4 (en) 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd Cmp polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution
JP2011014552A (en) * 2007-10-25 2011-01-20 Hitachi Chem Co Ltd Method of polishing substrate
JP5444625B2 (en) * 2008-03-05 2014-03-19 日立化成株式会社 CMP polishing liquid, substrate polishing method, and electronic component
JP2009278061A (en) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Polishing solution for cmp and polishing method
JP2010192556A (en) * 2009-02-17 2010-09-02 Fujifilm Corp Polishing solution for metal, and chemical mechanical polishing method
DE102009025243B4 (en) * 2009-06-17 2011-11-17 Siltronic Ag Method for producing and method of processing a semiconductor wafer made of silicon
US20120214307A1 (en) * 2009-11-12 2012-08-23 Hitachi Chemical Company, Ltd. Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
JP2011142284A (en) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Cmp polishing liquid, method of polishing substrate, and electronic component
SG190765A1 (en) * 2010-12-24 2013-07-31 Hitachi Chemical Co Ltd Polishing liquid and method for polishing substrate using the polishing liquid
JP6298588B2 (en) * 2011-06-22 2018-03-20 日立化成株式会社 Cleaning liquid and substrate polishing method
JP2013074036A (en) * 2011-09-27 2013-04-22 Toshiba Corp Slurry for cmp and method for manufacturing semiconductor device
SG11201405708VA (en) * 2012-03-14 2014-11-27 Hitachi Chemical Co Ltd Polishing method
SG11201506001VA (en) * 2013-02-13 2015-09-29 Fujimi Inc Polishing composition, method for producing polishing composition and method for producing polished article
JP2015008212A (en) * 2013-06-25 2015-01-15 日立化成株式会社 Polishing liquid and substrate polishing method using the same
JP6352060B2 (en) * 2014-06-06 2018-07-04 花王株式会社 Polishing liquid composition for polishing silicon oxide film
JPWO2016006553A1 (en) * 2014-07-09 2017-05-25 日立化成株式会社 Polishing liquid and polishing method for CMP
KR101715931B1 (en) * 2015-12-11 2017-03-14 주식회사 케이씨텍 Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same
JP2017110177A (en) * 2015-12-14 2017-06-22 日立化成株式会社 Polishing liquid, polishing liquid set and substrate polishing method
JP6783609B2 (en) * 2016-09-29 2020-11-11 花王株式会社 Metal oxide particle dispersion
WO2018179061A1 (en) * 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method

Also Published As

Publication number Publication date
KR102399744B1 (en) 2022-05-18
US20200299544A1 (en) 2020-09-24
JP6943284B2 (en) 2021-09-29
US11649377B2 (en) 2023-05-16
KR20200021519A (en) 2020-02-28
CN110998800B (en) 2023-09-22
WO2019035161A1 (en) 2019-02-21
JPWO2019035161A1 (en) 2020-04-16
KR20220066438A (en) 2022-05-24
CN110998800A (en) 2020-04-10
TWI780194B (en) 2022-10-11
TW201910480A (en) 2019-03-16

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