SG11202009064XA - Polishing liquid, polishing liquid set, and polishing method - Google Patents
Polishing liquid, polishing liquid set, and polishing methodInfo
- Publication number
- SG11202009064XA SG11202009064XA SG11202009064XA SG11202009064XA SG11202009064XA SG 11202009064X A SG11202009064X A SG 11202009064XA SG 11202009064X A SG11202009064X A SG 11202009064XA SG 11202009064X A SG11202009064X A SG 11202009064XA SG 11202009064X A SG11202009064X A SG 11202009064XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing liquid
- liquid
- liquid set
- polishing method
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/011464 WO2019180887A1 (en) | 2018-03-22 | 2018-03-22 | Polishing liquid, polishing liquid set, and polishing method |
PCT/JP2018/028105 WO2020021680A1 (en) | 2018-07-26 | 2018-07-26 | Slurry and polishing method |
PCT/JP2018/035480 WO2019181016A1 (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
PCT/JP2019/011867 WO2019182061A1 (en) | 2018-03-22 | 2019-03-20 | Polishing liquid, polishing liquid set, and polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009064XA true SG11202009064XA (en) | 2020-10-29 |
Family
ID=67986825
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008797WA SG11202008797WA (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
SG11202008680WA SG11202008680WA (en) | 2018-03-22 | 2019-03-20 | Slurry, slurry set and polishing method |
SG11202009064XA SG11202009064XA (en) | 2018-03-22 | 2019-03-20 | Polishing liquid, polishing liquid set, and polishing method |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008797WA SG11202008797WA (en) | 2018-03-22 | 2018-09-25 | Polishing liquid, polishing liquid set, and polishing method |
SG11202008680WA SG11202008680WA (en) | 2018-03-22 | 2019-03-20 | Slurry, slurry set and polishing method |
Country Status (7)
Country | Link |
---|---|
US (3) | US11572490B2 (en) |
JP (2) | JP6973620B2 (en) |
KR (3) | KR102576637B1 (en) |
CN (3) | CN111819263A (en) |
SG (3) | SG11202008797WA (en) |
TW (3) | TWI734971B (en) |
WO (4) | WO2019181013A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020021680A1 (en) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
KR20210076571A (en) * | 2019-12-16 | 2021-06-24 | 주식회사 케이씨텍 | Slurry composition for sti process |
TW202400519A (en) * | 2020-08-31 | 2024-01-01 | 南韓商秀博瑞殷股份有限公司 | Cerium oxide particle, method for producing the same, chemical-mechanical polishing slurry composition comprising the same and method of manufacturing semiconductor devices |
WO2022070314A1 (en) * | 2020-09-30 | 2022-04-07 | 昭和電工マテリアルズ株式会社 | Slurry and polishing method |
KR20220066256A (en) * | 2020-11-11 | 2022-05-24 | 쇼와덴코머티리얼즈가부시끼가이샤 | Polishing liquid and polishing method |
US20230203342A1 (en) * | 2021-01-06 | 2023-06-29 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
CN113231919A (en) * | 2021-05-10 | 2021-08-10 | 南通瑞景光电科技有限公司 | Environment-friendly grinding process for optical element |
WO2023127775A1 (en) * | 2021-12-28 | 2023-07-06 | 株式会社レゾナック | Composition, polishing agent and method for polishing base material |
CN115446718A (en) * | 2022-07-19 | 2022-12-09 | 北京博海康源医疗器械有限公司 | System and method for polishing and deburring surface of scalpel |
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CN115710464A (en) * | 2022-11-11 | 2023-02-24 | 博力思(天津)电子科技有限公司 | Silicon oxide dielectric layer chemical mechanical polishing solution with low surface roughness |
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KR101823083B1 (en) | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | Surface-modified colloidal ceria abrasive particle, preparing method of the same and polishing slurry composition comprising the same |
JP6720791B2 (en) | 2016-09-13 | 2020-07-08 | Agc株式会社 | Abrasive, polishing method, and polishing additive |
KR102619722B1 (en) | 2016-10-27 | 2024-01-02 | 삼성디스플레이 주식회사 | Method of manufacturing transistor array panel and polishing slurry used the same |
WO2019035161A1 (en) * | 2017-08-14 | 2019-02-21 | 日立化成株式会社 | Polishing liquid, polishing liquid set and polishing method |
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2018
- 2018-09-25 WO PCT/JP2018/035456 patent/WO2019181013A1/en active Application Filing
- 2018-09-25 WO PCT/JP2018/035480 patent/WO2019181016A1/en active Application Filing
- 2018-09-25 WO PCT/JP2018/035458 patent/WO2019181014A1/en active Application Filing
- 2018-09-25 JP JP2020507311A patent/JP6973620B2/en active Active
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- 2018-09-25 US US16/981,560 patent/US11572490B2/en active Active
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- 2019-03-20 US US16/981,589 patent/US11767448B2/en active Active
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WO2019182063A1 (en) | 2019-09-26 |
US11352523B2 (en) | 2022-06-07 |
CN111868203A (en) | 2020-10-30 |
JPWO2019182063A1 (en) | 2021-02-25 |
TW201940617A (en) | 2019-10-16 |
TW201940652A (en) | 2019-10-16 |
US11572490B2 (en) | 2023-02-07 |
KR102520409B1 (en) | 2023-04-11 |
JP6973620B2 (en) | 2021-12-01 |
WO2019181013A1 (en) | 2019-09-26 |
TW201940651A (en) | 2019-10-16 |
CN111868202B (en) | 2021-12-21 |
TWI734971B (en) | 2021-08-01 |
JPWO2019181013A1 (en) | 2021-02-04 |
KR102589079B1 (en) | 2023-10-12 |
KR20200118186A (en) | 2020-10-14 |
CN111868202A (en) | 2020-10-30 |
KR20200128741A (en) | 2020-11-16 |
TWI786281B (en) | 2022-12-11 |
US20210017422A1 (en) | 2021-01-21 |
US20210071037A1 (en) | 2021-03-11 |
WO2019181016A1 (en) | 2019-09-26 |
KR102576637B1 (en) | 2023-09-07 |
SG11202008797WA (en) | 2020-10-29 |
JP7067614B2 (en) | 2022-05-16 |
US11767448B2 (en) | 2023-09-26 |
CN111819263A (en) | 2020-10-23 |
WO2019181014A1 (en) | 2019-09-26 |
KR20200128742A (en) | 2020-11-16 |
US20210054233A1 (en) | 2021-02-25 |
SG11202008680WA (en) | 2020-10-29 |
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