SG11202002314WA - Polishing solution, polishing solution set, and polishing method - Google Patents

Polishing solution, polishing solution set, and polishing method

Info

Publication number
SG11202002314WA
SG11202002314WA SG11202002314WA SG11202002314WA SG11202002314WA SG 11202002314W A SG11202002314W A SG 11202002314WA SG 11202002314W A SG11202002314W A SG 11202002314WA SG 11202002314W A SG11202002314W A SG 11202002314WA SG 11202002314W A SG11202002314W A SG 11202002314WA
Authority
SG
Singapore
Prior art keywords
polishing
polishing solution
solution
solution set
polishing method
Prior art date
Application number
SG11202002314WA
Inventor
Mamiko Kanamaru
Nao Yamamura
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11202002314WA publication Critical patent/SG11202002314WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/02—Acids; Metal salts or ammonium salts thereof, e.g. maleic acid or itaconic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02—Homopolymers or copolymers of hydrocarbons
    • C08L25/04—Homopolymers or copolymers of styrene
    • C08L25/08—Copolymers of styrene
    • C08L25/14—Copolymers of styrene with unsaturated esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
SG11202002314WA 2017-09-29 2017-09-29 Polishing solution, polishing solution set, and polishing method SG11202002314WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/035588 WO2019064524A1 (en) 2017-09-29 2017-09-29 Polishing solution, polishing solution set, and polishing method

Publications (1)

Publication Number Publication Date
SG11202002314WA true SG11202002314WA (en) 2020-04-29

Family

ID=65902354

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002314WA SG11202002314WA (en) 2017-09-29 2017-09-29 Polishing solution, polishing solution set, and polishing method

Country Status (7)

Country Link
US (1) US20210189176A1 (en)
JP (2) JP7167042B2 (en)
KR (3) KR102398392B1 (en)
CN (2) CN111149193B (en)
SG (1) SG11202002314WA (en)
TW (2) TWI803518B (en)
WO (1) WO2019064524A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7187770B2 (en) * 2017-11-08 2022-12-13 Ａｇｃ株式会社 Polishing agent, polishing method, and polishing additive
JP7216880B2 (en) * 2019-02-19 2023-02-02 株式会社レゾナック Polishing liquid and polishing method
CN115466574A (en) * 2022-09-21 2022-12-13 深圳市东方亮化学材料有限公司 Processing method of double-component metal grinding and polishing paste

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DE60015479T2 (en) * 1999-11-22 2005-10-27 Jsr Corp. Process for the preparation of a composite particle for chemical mechanical polishing
US6827633B2 (en) * 2001-12-28 2004-12-07 Ebara Corporation Polishing method
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JP2005109129A (en) * 2003-09-30 2005-04-21 Dainippon Ink & Chem Inc Abrasive grain for polishing, aqueous dispersion for polishing, and polishing agent
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JP2005154683A (en) * 2003-11-28 2005-06-16 Dainippon Ink & Chem Inc Photodetectable abrasive particle and polishing agent
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SG173357A1 (en) * 2005-11-11 2011-08-29 Hitachi Chemical Co Ltd Polishing slurry for silicon oxide, additive liquid and polishing method
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JP5418590B2 (en) * 2009-06-09 2014-02-19 日立化成株式会社 Abrasive, abrasive set and substrate polishing method
US8420517B2 (en) * 2009-07-02 2013-04-16 Innovalight, Inc. Methods of forming a multi-doped junction with silicon-containing particles
CN102473622B (en) * 2009-10-22 2013-10-16 日立化成株式会社 Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
JP2011142284A (en) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Cmp polishing liquid, method of polishing substrate, and electronic component
JP5657247B2 (en) * 2009-12-25 2015-01-21 花王株式会社 Polishing liquid composition
JP5833390B2 (en) * 2010-09-24 2015-12-16 花王株式会社 Method for producing polishing composition
CN108276915A (en) * 2010-12-10 2018-07-13 巴斯夫欧洲公司 Aqueous polishing composition and method for chemically-mechanicapolish polishing the substrate for including silicon oxide dielectric and polysilicon film
JP2013098392A (en) 2011-11-01 2013-05-20 Fujimi Inc Polishing composition and polishing method
JP6044630B2 (en) * 2012-02-21 2016-12-14 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
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Also Published As

Publication number Publication date
TWI803518B (en) 2023-06-01
JPWO2019064524A1 (en) 2020-04-23
JP2022040139A (en) 2022-03-10
KR20200039773A (en) 2020-04-16
KR20230134157A (en) 2023-09-20
TW201920535A (en) 2019-06-01
CN117050726A (en) 2023-11-14
WO2019064524A1 (en) 2019-04-04
TWI830572B (en) 2024-01-21
US20210189176A1 (en) 2021-06-24
KR102398392B1 (en) 2022-05-13
CN111149193B (en) 2023-09-08
TW202321392A (en) 2023-06-01
JP7167042B2 (en) 2022-11-08
KR20220065096A (en) 2022-05-19
CN111149193A (en) 2020-05-12

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