SG11202100627YA - Slurry, and polishing method - Google Patents
Slurry, and polishing methodInfo
- Publication number
- SG11202100627YA SG11202100627YA SG11202100627YA SG11202100627YA SG11202100627YA SG 11202100627Y A SG11202100627Y A SG 11202100627YA SG 11202100627Y A SG11202100627Y A SG 11202100627YA SG 11202100627Y A SG11202100627Y A SG 11202100627YA SG 11202100627Y A SG11202100627Y A SG 11202100627YA
- Authority
- SG
- Singapore
- Prior art keywords
- slurry
- polishing method
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Disintegrating Or Milling (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2018/028105 WO2020021680A1 (en) | 2018-07-26 | 2018-07-26 | Slurry and polishing method |
| PCT/JP2019/028712 WO2020022290A1 (en) | 2018-07-26 | 2019-07-22 | Slurry, and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202100627YA true SG11202100627YA (en) | 2021-03-30 |
Family
ID=69180670
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202100636YA SG11202100636YA (en) | 2018-07-26 | 2018-09-25 | Slurry, screening method, and polishing method |
| SG11202100610RA SG11202100610RA (en) | 2018-07-26 | 2018-09-25 | Slurry and polishing method |
| SG11202100589TA SG11202100589TA (en) | 2018-07-26 | 2018-09-25 | Slurry and polishing method |
| SG11202100567YA SG11202100567YA (en) | 2018-07-26 | 2018-09-25 | Slurry, method for producing polishing liquid, and polishing method |
| SG11202100586PA SG11202100586PA (en) | 2018-07-26 | 2018-09-25 | Slurry, polishing solution production method, and polishing method |
| SG11202100627YA SG11202100627YA (en) | 2018-07-26 | 2019-07-22 | Slurry, and polishing method |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202100636YA SG11202100636YA (en) | 2018-07-26 | 2018-09-25 | Slurry, screening method, and polishing method |
| SG11202100610RA SG11202100610RA (en) | 2018-07-26 | 2018-09-25 | Slurry and polishing method |
| SG11202100589TA SG11202100589TA (en) | 2018-07-26 | 2018-09-25 | Slurry and polishing method |
| SG11202100567YA SG11202100567YA (en) | 2018-07-26 | 2018-09-25 | Slurry, method for producing polishing liquid, and polishing method |
| SG11202100586PA SG11202100586PA (en) | 2018-07-26 | 2018-09-25 | Slurry, polishing solution production method, and polishing method |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US11499078B2 (en) |
| JP (6) | JP6965996B2 (en) |
| KR (5) | KR102589118B1 (en) |
| CN (6) | CN112930585A (en) |
| SG (6) | SG11202100636YA (en) |
| TW (6) | TWI771603B (en) |
| WO (7) | WO2020021680A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020021680A1 (en) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
| US20220033680A1 (en) * | 2018-09-25 | 2022-02-03 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
| WO2021220787A1 (en) * | 2020-04-27 | 2021-11-04 | コニカミノルタ株式会社 | Polishing system |
| KR102453292B1 (en) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | CMP Composition of Cerium Oxide Powders |
| CN115039203A (en) * | 2021-01-06 | 2022-09-09 | 昭和电工材料株式会社 | Polishing liquid, polishing liquid set and polishing method |
| US11650939B2 (en) * | 2021-02-02 | 2023-05-16 | Dell Products L.P. | Managing access to peripherals in a containerized environment |
Family Cites Families (87)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4941430B1 (en) | 1970-08-25 | 1974-11-08 | ||
| JP2524020B2 (en) * | 1990-08-20 | 1996-08-14 | 株式会社日立製作所 | Liquid particle adhesion control method |
| US5409544A (en) * | 1990-08-20 | 1995-04-25 | Hitachi, Ltd. | Method of controlling adhesion of fine particles to an object in liquid |
| US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
| JP3278532B2 (en) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | Method for manufacturing semiconductor device |
| TW311905B (en) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
| WO1997029510A1 (en) | 1996-02-07 | 1997-08-14 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates |
| JPH10154672A (en) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | Cerium oxide abrasive material and polishing method of substrate |
| JPH10106994A (en) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and polishing method of substrate |
| CN1746255B (en) * | 2001-02-20 | 2010-11-10 | 日立化成工业株式会社 | Polishing compound and method for polishing substrate |
| TW571361B (en) * | 2001-02-20 | 2004-01-11 | Hitachi Chemical Co Ltd | Polishing agent and method for polishing a substrate |
| US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| JPWO2003070853A1 (en) * | 2002-02-20 | 2005-06-09 | 日本ミクロコーティング株式会社 | Polishing slurry |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6939211B2 (en) * | 2003-10-09 | 2005-09-06 | Micron Technology, Inc. | Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions |
| US7112123B2 (en) | 2004-06-14 | 2006-09-26 | Amcol International Corporation | Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces |
| US20050119360A1 (en) | 2003-11-28 | 2005-06-02 | Kabushiki Kaisha Kobe Seiko Sho | Method for producing porous material |
| JP2006249129A (en) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | Method for producing polishing agent and polishing agent |
| KR101267971B1 (en) | 2005-08-31 | 2013-05-27 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing Composition and Polishing Method |
| JP5105869B2 (en) | 2006-04-27 | 2012-12-26 | 花王株式会社 | Polishing liquid composition |
| JP2008112990A (en) * | 2006-10-04 | 2008-05-15 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
| JP2013141041A (en) * | 2006-10-04 | 2013-07-18 | Hitachi Chemical Co Ltd | Method for polishing substrate |
| JP5281758B2 (en) * | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | Polishing composition |
| EP2260013B1 (en) * | 2008-02-12 | 2018-12-19 | Saint-Gobain Ceramics & Plastics, Inc. | Ceria material and method of forming same |
| KR101184731B1 (en) * | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | Method for preparing cerium oxide, cerium oxide prepared therefrom and cmp slurry comprising the same |
| CN101550318B (en) * | 2008-04-03 | 2012-11-14 | 北京有色金属研究总院 | Ce3+ -contained rare-earth polishing powder and preparation method thereof |
| CN103396765A (en) | 2008-04-23 | 2013-11-20 | 日立化成工业株式会社 | Polishing agent and method for polishing substrate using polshing agent |
| JP5287174B2 (en) * | 2008-04-30 | 2013-09-11 | 日立化成株式会社 | Abrasive and polishing method |
| TW201038690A (en) * | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| JP2010153782A (en) * | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| JP2010153781A (en) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| CN103333662A (en) * | 2008-12-11 | 2013-10-02 | 日立化成工业株式会社 | Polishing solution for cmp and polishing method using the polishing solution |
| KR20120023043A (en) * | 2009-06-09 | 2012-03-12 | 히다치 가세고교 가부시끼가이샤 | Abrasive slurry, abrasive set, and method for grinding substrate |
| KR101380098B1 (en) | 2009-07-16 | 2014-04-01 | 히타치가세이가부시끼가이샤 | Cmp fluid and method for polishing palladium |
| US8728341B2 (en) | 2009-10-22 | 2014-05-20 | Hitachi Chemical Company, Ltd. | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| WO2012032469A1 (en) | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
| CN103409108B (en) | 2010-11-22 | 2015-04-22 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| CN103500706A (en) * | 2010-11-22 | 2014-01-08 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| CN103374330B (en) | 2010-11-22 | 2015-10-14 | 日立化成株式会社 | The manufacture method of the manufacture method of abrasive particle, the manufacture method of suspension and lapping liquid |
| WO2012102187A1 (en) | 2011-01-25 | 2012-08-02 | 日立化成工業株式会社 | Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material |
| JP2012186339A (en) | 2011-03-07 | 2012-09-27 | Hitachi Chem Co Ltd | Polishing liquid and polishing method of substrate using the same |
| WO2013035545A1 (en) * | 2011-09-09 | 2013-03-14 | 旭硝子株式会社 | Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products |
| JP2015088495A (en) | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | Polishing material, polishing material set, and method for polishing base material |
| WO2013175856A1 (en) | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| WO2014034358A1 (en) | 2012-08-30 | 2014-03-06 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| JP2014060205A (en) | 2012-09-14 | 2014-04-03 | Fujimi Inc | Polishing composition |
| WO2014061417A1 (en) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Polishing solution for cmp, stock solution, and polishing method |
| JP6139975B2 (en) | 2013-05-15 | 2017-05-31 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US10155886B2 (en) | 2013-06-12 | 2018-12-18 | Hitachi Chemical Company, Ltd. | Polishing liquid for CMP, and polishing method |
| US10047262B2 (en) * | 2013-06-27 | 2018-08-14 | Konica Minolta, Inc. | Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method |
| JP6428625B2 (en) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
| WO2015052988A1 (en) | 2013-10-10 | 2015-04-16 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| JP6223786B2 (en) * | 2013-11-12 | 2017-11-01 | 花王株式会社 | Polishing liquid composition for hard and brittle materials |
| WO2015098197A1 (en) | 2013-12-26 | 2015-07-02 | 日立化成株式会社 | Abrasive, abrasive set, and method for polishing substrate |
| JP6360311B2 (en) | 2014-01-21 | 2018-07-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing the same |
| KR20170032335A (en) * | 2014-07-09 | 2017-03-22 | 히타치가세이가부시끼가이샤 | Cmp polishing liquid, and polishing method |
| KR101613359B1 (en) * | 2014-07-15 | 2016-04-27 | 에스케이하이닉스 주식회사 | Nano ceria slurry composition for chemical-mechanical polishing and preparation method for thereof |
| JP6435689B2 (en) | 2014-07-25 | 2018-12-12 | Ａｇｃ株式会社 | Abrasive, polishing method, and additive liquid for polishing |
| CN106661429B (en) | 2014-08-26 | 2019-07-05 | 凯斯科技股份有限公司 | Polishing slurries composition |
| JP5893700B1 (en) * | 2014-09-26 | 2016-03-23 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
| JP2016069535A (en) | 2014-09-30 | 2016-05-09 | 株式会社フジミインコーポレーテッド | Polishing composition and producing method thereof and polishing method |
| US9422455B2 (en) | 2014-12-12 | 2016-08-23 | Cabot Microelectronics Corporation | CMP compositions exhibiting reduced dishing in STI wafer polishing |
| JP2016154208A (en) | 2015-02-12 | 2016-08-25 | 旭硝子株式会社 | Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device |
| US10946494B2 (en) | 2015-03-10 | 2021-03-16 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
| KR101773543B1 (en) * | 2015-06-30 | 2017-09-01 | 유비머트리얼즈주식회사 | Abrasive particles, Polishing slurry and fabricating method of abrasive particles |
| KR101761792B1 (en) * | 2015-07-02 | 2017-07-26 | 주식회사 케이씨텍 | Slurry comprising for sti polishing |
| JP6570382B2 (en) * | 2015-09-09 | 2019-09-04 | デンカ株式会社 | Polishing silica additive and method using the same |
| WO2017043139A1 (en) * | 2015-09-09 | 2017-03-16 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and substrate polishing method |
| JP6645136B2 (en) * | 2015-11-20 | 2020-02-12 | 日立化成株式会社 | Semiconductor substrate manufacturing method and cleaning liquid |
| KR101737938B1 (en) | 2015-12-15 | 2017-05-19 | 주식회사 케이씨텍 | Multi-function polishing slurry composition |
| JP6589622B2 (en) * | 2015-12-22 | 2019-10-16 | 日立化成株式会社 | Polishing liquid, polishing method, semiconductor substrate and electronic device |
| KR101761789B1 (en) | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | Additive composition for polishing slurry and positive polishing slurry composition comprising the same |
| US20210189175A1 (en) | 2016-02-16 | 2021-06-24 | 3M Innovative Properties Company | Polishing systems and method of making and using same |
| JP2017203076A (en) * | 2016-05-10 | 2017-11-16 | 日立化成株式会社 | Cmp polisher and polishing method using the same |
| JPWO2018012174A1 (en) * | 2016-07-15 | 2019-06-13 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, and polishing method |
| KR101823083B1 (en) | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | Surface-modified colloidal ceria abrasive particle, preparing method of the same and polishing slurry composition comprising the same |
| JP6720791B2 (en) | 2016-09-13 | 2020-07-08 | Ａｇｃ株式会社 | Abrasive, polishing method, and polishing additive |
| KR20190055112A (en) * | 2016-09-29 | 2019-05-22 | 카오카부시키가이샤 | Abrasive liquid composition |
| KR102619722B1 (en) | 2016-10-27 | 2024-01-02 | 삼성디스플레이 주식회사 | Method of manufacturing transistor array panel and polishing slurry used the same |
| US10920120B2 (en) * | 2016-11-14 | 2021-02-16 | Jgc Catalysts And Chemicals Ltd. | Ceria composite particle dispersion, method for producing same, and polishing abrasive grain dispersion comprising ceria composite particle dispersion |
| US11649377B2 (en) | 2017-08-14 | 2023-05-16 | Resonac Corporation | Polishing liquid, polishing liquid set and polishing method |
| KR102431416B1 (en) * | 2017-11-15 | 2022-08-12 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Compositions for performing material removal operations and methods for forming same |
| WO2020021680A1 (en) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
| US11572490B2 (en) * | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
| US20220033680A1 (en) * | 2018-09-25 | 2022-02-03 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
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