SG11202001700XA - Slurry and polishing method - Google Patents

Slurry and polishing method

Info

Publication number
SG11202001700XA
SG11202001700XA SG11202001700XA SG11202001700XA SG11202001700XA SG 11202001700X A SG11202001700X A SG 11202001700XA SG 11202001700X A SG11202001700X A SG 11202001700XA SG 11202001700X A SG11202001700X A SG 11202001700XA SG 11202001700X A SG11202001700X A SG 11202001700XA
Authority
SG
Singapore
Prior art keywords
slurry
polishing method
polishing
Prior art date
Application number
SG11202001700XA
Inventor
Takaaki Matsumoto
Tomohiro Iwano
Tomoyasu Hasegawa
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11202001700XA publication Critical patent/SG11202001700XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11202001700XA 2017-08-30 2018-08-30 Slurry and polishing method SG11202001700XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2017/031087 WO2019043819A1 (en) 2017-08-30 2017-08-30 Slurry and polishing method
PCT/JP2018/032133 WO2019044978A1 (en) 2017-08-30 2018-08-30 Slurry and polishing method

Publications (1)

Publication Number Publication Date
SG11202001700XA true SG11202001700XA (en) 2020-03-30

Family

ID=65526285

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001700XA SG11202001700XA (en) 2017-08-30 2018-08-30 Slurry and polishing method

Country Status (7)

Country Link
US (1) US11702569B2 (en)
JP (1) JP6947216B2 (en)
KR (1) KR102463855B1 (en)
CN (1) CN111065707A (en)
SG (1) SG11202001700XA (en)
TW (1) TWI717633B (en)
WO (2) WO2019043819A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7421855B2 (en) * 2018-03-02 2024-01-25 Ａｇｃ株式会社 Abrasives, polishing methods, and additives for polishing
JP2021080441A (en) * 2019-11-20 2021-05-27 株式会社フジミインコーポレーテッド Polishing composition, polishing method, and method for manufacturing substrate

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US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
EP0969057A1 (en) * 1998-07-03 2000-01-05 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
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KR100464429B1 (en) 2002-08-16 2005-01-03 삼성전자주식회사 Chemical mechanical polishing slurry and chemical mechanical polishing method using the same
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
TWI273632B (en) * 2004-07-28 2007-02-11 K C Tech Co Ltd Polishing slurry, method of producing same, and method of polishing substrate
JP2006077127A (en) * 2004-09-09 2006-03-23 Fujimi Inc Polishing composition and polishing method using the composition
JP2006249129A (en) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd Method for producing polishing agent and polishing agent
JP2009503910A (en) * 2005-08-05 2009-01-29 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド High-throughput chemical mechanical polishing composition for metal film planarization
JP2013141041A (en) * 2006-10-04 2013-07-18 Hitachi Chemical Co Ltd Method for polishing substrate
CN101568615B (en) * 2006-12-28 2013-02-06 花王株式会社 Polishing liquid composition
JP5287174B2 (en) * 2008-04-30 2013-09-11 日立化成株式会社 Abrasive and polishing method
JP5499556B2 (en) * 2008-11-11 2014-05-21 日立化成株式会社 Slurry and polishing liquid set, and substrate polishing method and substrate using CMP polishing liquid obtained therefrom
JP2011142284A (en) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Cmp polishing liquid, method of polishing substrate, and electronic component
CN103500706A (en) 2010-11-22 2014-01-08 日立化成株式会社 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103222036B (en) 2010-11-22 2016-11-09 日立化成株式会社 The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate
KR20130129399A (en) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
WO2012102187A1 (en) * 2011-01-25 2012-08-02 日立化成工業株式会社 Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
KR20140034235A (en) * 2011-06-08 2014-03-19 가부시키가이샤 후지미인코퍼레이티드 Abrasive and polishing composition
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KR20150014956A (en) * 2012-05-22 2015-02-09 히타치가세이가부시끼가이샤 Abrasive particles, slurry, polishing solution, and manufacturing methods therefor
US9165489B2 (en) * 2013-05-21 2015-10-20 Cabot Microelectronics Corporation CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
WO2014208414A1 (en) * 2013-06-27 2014-12-31 コニカミノルタ株式会社 Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method
CN105517758B (en) * 2013-09-25 2020-03-31 3M创新有限公司 Composite ceramic grinding and polishing solution
CN103740329B (en) 2014-01-09 2015-03-25 上海华明高纳稀土新材料有限公司 Cerium oxide polishing powder and preparation method thereof
US9803107B2 (en) * 2015-02-12 2017-10-31 Asahi Glass Company, Limited Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device
KR101833219B1 (en) * 2016-08-05 2018-04-13 주식회사 케이씨텍 Slurry composition for tungsten barrier layer polishing
SG11202001013YA (en) * 2017-08-14 2020-03-30 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set and polishing method

Also Published As

Publication number Publication date
WO2019043819A1 (en) 2019-03-07
KR20200037338A (en) 2020-04-08
TWI717633B (en) 2021-02-01
US20200299545A1 (en) 2020-09-24
US11702569B2 (en) 2023-07-18
CN111065707A (en) 2020-04-24
KR102463855B1 (en) 2022-11-03
JPWO2019044978A1 (en) 2020-04-23
WO2019044978A1 (en) 2019-03-07
TW201920534A (en) 2019-06-01
JP6947216B2 (en) 2021-10-13

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