SG11202100610RA - Slurry and polishing method - Google Patents

Slurry and polishing method

Info

Publication number
SG11202100610RA
SG11202100610RA SG11202100610RA SG11202100610RA SG11202100610RA SG 11202100610R A SG11202100610R A SG 11202100610RA SG 11202100610R A SG11202100610R A SG 11202100610RA SG 11202100610R A SG11202100610R A SG 11202100610RA SG 11202100610R A SG11202100610R A SG 11202100610RA
Authority
SG
Singapore
Prior art keywords
slurry
polishing method
polishing
Prior art date
Application number
SG11202100610RA
Inventor
Satoyuki Nomura
Tomohiro Iwano
Takaaki Matsumoto
Tomoyasu Hasegawa
Tomomi Kukita
Original Assignee
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Publication of SG11202100610RA publication Critical patent/SG11202100610RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
SG11202100610RA 2018-07-26 2018-09-25 Slurry and polishing method SG11202100610RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2018/028105 WO2020021680A1 (en) 2018-07-26 2018-07-26 Slurry and polishing method
PCT/JP2018/035438 WO2020021729A1 (en) 2018-07-26 2018-09-25 Slurry and polishing method

Publications (1)

Publication Number Publication Date
SG11202100610RA true SG11202100610RA (en) 2021-02-25

Family

ID=69180670

Family Applications (6)

Application Number Title Priority Date Filing Date
SG11202100636YA SG11202100636YA (en) 2018-07-26 2018-09-25 Slurry, screening method, and polishing method
SG11202100586PA SG11202100586PA (en) 2018-07-26 2018-09-25 Slurry, polishing solution production method, and polishing method
SG11202100589TA SG11202100589TA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100567YA SG11202100567YA (en) 2018-07-26 2018-09-25 Slurry, method for producing polishing liquid, and polishing method
SG11202100610RA SG11202100610RA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100627YA SG11202100627YA (en) 2018-07-26 2019-07-22 Slurry, and polishing method

Family Applications Before (4)

Application Number Title Priority Date Filing Date
SG11202100636YA SG11202100636YA (en) 2018-07-26 2018-09-25 Slurry, screening method, and polishing method
SG11202100586PA SG11202100586PA (en) 2018-07-26 2018-09-25 Slurry, polishing solution production method, and polishing method
SG11202100589TA SG11202100589TA (en) 2018-07-26 2018-09-25 Slurry and polishing method
SG11202100567YA SG11202100567YA (en) 2018-07-26 2018-09-25 Slurry, method for producing polishing liquid, and polishing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11202100627YA SG11202100627YA (en) 2018-07-26 2019-07-22 Slurry, and polishing method

Country Status (7)

Country Link
US (6) US20210301179A1 (en)
JP (6) JP6965997B2 (en)
KR (6) KR102589119B1 (en)
CN (6) CN112640050A (en)
SG (6) SG11202100636YA (en)
TW (5) TWI811406B (en)
WO (7) WO2020021680A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020021680A1 (en) * 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
WO2020065723A1 (en) * 2018-09-25 2020-04-02 日立化成株式会社 Slurry and polishing method
US20230191554A1 (en) * 2020-04-27 2023-06-22 Konica Minolta, Inc. Polishing system
KR20220101080A (en) * 2021-01-06 2022-07-19 쇼와덴코머티리얼즈가부시끼가이샤 Polishing liquid, polishing liquid set and polishing method
US11650939B2 (en) * 2021-02-02 2023-05-16 Dell Products L.P. Managing access to peripherals in a containerized environment

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941430B1 (en) 1970-08-25 1974-11-08
US5409544A (en) * 1990-08-20 1995-04-25 Hitachi, Ltd. Method of controlling adhesion of fine particles to an object in liquid
JP2524020B2 (en) * 1990-08-20 1996-08-14 株式会社日立製作所 Liquid particle adhesion control method
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
JP3278532B2 (en) 1994-07-08 2002-04-30 株式会社東芝 Method for manufacturing semiconductor device
TW311905B (en) * 1994-07-11 1997-08-01 Nissan Chemical Ind Ltd
US6420269B2 (en) * 1996-02-07 2002-07-16 Hitachi Chemical Company, Ltd. Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same
JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
TW571361B (en) * 2001-02-20 2004-01-11 Hitachi Chemical Co Ltd Polishing agent and method for polishing a substrate
KR100512134B1 (en) 2001-02-20 2005-09-02 히다치 가세고교 가부시끼가이샤 Polishing compound and method for polishing substrate
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
EP1405889A1 (en) * 2002-02-20 2004-04-07 Nihon Micro Coating Co., Ltd. Polishing slurry
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6939211B2 (en) * 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US7112123B2 (en) 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US20050119360A1 (en) 2003-11-28 2005-06-02 Kabushiki Kaisha Kobe Seiko Sho Method for producing porous material
JP2006249129A (en) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd Method for producing polishing agent and polishing agent
KR101267971B1 (en) 2005-08-31 2013-05-27 가부시키가이샤 후지미인코퍼레이티드 Polishing Composition and Polishing Method
JP5105869B2 (en) 2006-04-27 2012-12-26 花王株式会社 Polishing liquid composition
JP2008112990A (en) * 2006-10-04 2008-05-15 Hitachi Chem Co Ltd Polishing agent and method for polishing substrate
JP2013141041A (en) * 2006-10-04 2013-07-18 Hitachi Chemical Co Ltd Method for polishing substrate
JP5281758B2 (en) * 2007-05-24 2013-09-04 ユシロ化学工業株式会社 Polishing composition
JP5385306B2 (en) * 2008-02-12 2014-01-08 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Ceria material and method for forming ceria material
KR101184731B1 (en) * 2008-03-20 2012-09-20 주식회사 엘지화학 Method for preparing cerium oxide, cerium oxide prepared therefrom and cmp slurry comprising the same
CN101550318B (en) * 2008-04-03 2012-11-14 北京有色金属研究总院 Ce3+ -contained rare-earth polishing powder and preparation method thereof
TWI615462B (en) 2008-04-23 2018-02-21 日商日立化成股份有限公司 Polishing agent and method for polishing substrate using the same
JP5287174B2 (en) * 2008-04-30 2013-09-11 日立化成株式会社 Abrasive and polishing method
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP2010153782A (en) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd Polishing method for substrate
JP2010153781A (en) 2008-11-20 2010-07-08 Hitachi Chem Co Ltd Polishing method for substrate
KR101268615B1 (en) 2008-12-11 2013-06-04 히타치가세이가부시끼가이샤 Polishing solution for cmp and polishing method using the polishing solution
WO2010143579A1 (en) * 2009-06-09 2010-12-16 日立化成工業株式会社 Abrasive slurry, abrasive set, and method for grinding substrate
JP5640977B2 (en) 2009-07-16 2014-12-17 日立化成株式会社 CMP polishing liquid for polishing palladium and polishing method
CN102627914B (en) 2009-10-22 2014-10-29 日立化成株式会社 Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
JP2011142284A (en) 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Cmp polishing liquid, method of polishing substrate, and electronic component
SG188460A1 (en) 2010-09-08 2013-04-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
KR20130129397A (en) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103374330B (en) 2010-11-22 2015-10-14 日立化成株式会社 The manufacture method of the manufacture method of abrasive particle, the manufacture method of suspension and lapping liquid
SG190058A1 (en) 2010-11-22 2013-06-28 Hitachi Chemical Co Ltd Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
JP5953762B2 (en) * 2011-01-25 2016-07-20 日立化成株式会社 CMP polishing liquid, manufacturing method thereof, and substrate polishing method
JP2012186339A (en) 2011-03-07 2012-09-27 Hitachi Chem Co Ltd Polishing liquid and polishing method of substrate using the same
WO2013035545A1 (en) * 2011-09-09 2013-03-14 旭硝子株式会社 Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products
JP2015088495A (en) 2012-02-21 2015-05-07 日立化成株式会社 Polishing material, polishing material set, and method for polishing base material
US9932497B2 (en) 2012-05-22 2018-04-03 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
JP6107826B2 (en) 2012-08-30 2017-04-05 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
JP2014060205A (en) 2012-09-14 2014-04-03 Fujimi Inc Polishing composition
JP6139975B2 (en) 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド Polishing composition
WO2014199739A1 (en) 2013-06-12 2014-12-18 日立化成株式会社 Polishing liquid for cmp, and polishing method
US10047262B2 (en) * 2013-06-27 2018-08-14 Konica Minolta, Inc. Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
WO2015052988A1 (en) 2013-10-10 2015-04-16 日立化成株式会社 Polishing agent, polishing agent set and method for polishing base
JP6223786B2 (en) * 2013-11-12 2017-11-01 花王株式会社 Polishing liquid composition for hard and brittle materials
KR102138406B1 (en) 2013-12-26 2020-07-27 히타치가세이가부시끼가이샤 Abrasive, abrasive set, and method for polishing substrate
JP6360311B2 (en) 2014-01-21 2018-07-18 株式会社フジミインコーポレーテッド Polishing composition and method for producing the same
WO2016006553A1 (en) 2014-07-09 2016-01-14 日立化成株式会社 Cmp polishing liquid, and polishing method
JP6435689B2 (en) 2014-07-25 2018-12-12 Ａｇｃ株式会社 Abrasive, polishing method, and additive liquid for polishing
CN106661429B (en) 2014-08-26 2019-07-05 凯斯科技股份有限公司 Polishing slurries composition
JP5893700B1 (en) * 2014-09-26 2016-03-23 花王株式会社 Polishing liquid composition for silicon oxide film
JP2016069535A (en) 2014-09-30 2016-05-09 株式会社フジミインコーポレーテッド Polishing composition and producing method thereof and polishing method
US9422455B2 (en) 2014-12-12 2016-08-23 Cabot Microelectronics Corporation CMP compositions exhibiting reduced dishing in STI wafer polishing
JP2016154208A (en) 2015-02-12 2016-08-25 旭硝子株式会社 Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
CN107406752B (en) 2015-03-10 2020-05-08 日立化成株式会社 Polishing agent, stock solution for polishing agent, and polishing method
KR101773543B1 (en) * 2015-06-30 2017-09-01 유비머트리얼즈주식회사 Abrasive particles, Polishing slurry and fabricating method of abrasive particles
KR101761792B1 (en) * 2015-07-02 2017-07-26 주식회사 케이씨텍 Slurry comprising for sti polishing
SG11201801790UA (en) * 2015-09-09 2018-04-27 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and substrate polishing method
JP6570382B2 (en) 2015-09-09 2019-09-04 デンカ株式会社 Polishing silica additive and method using the same
JP6645136B2 (en) * 2015-11-20 2020-02-12 日立化成株式会社 Semiconductor substrate manufacturing method and cleaning liquid
KR101737938B1 (en) 2015-12-15 2017-05-19 주식회사 케이씨텍 Multi-function polishing slurry composition
JP6589622B2 (en) * 2015-12-22 2019-10-16 日立化成株式会社 Polishing liquid, polishing method, semiconductor substrate and electronic device
KR101761789B1 (en) 2015-12-24 2017-07-26 주식회사 케이씨텍 Additive composition for polishing slurry and positive polishing slurry composition comprising the same
KR20180112004A (en) 2016-02-16 2018-10-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Polishing system, method of making and method of using same
JP2017203076A (en) 2016-05-10 2017-11-16 日立化成株式会社 Cmp polisher and polishing method using the same
JPWO2018012174A1 (en) 2016-07-15 2019-06-13 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, and polishing method
KR101823083B1 (en) 2016-09-07 2018-01-30 주식회사 케이씨텍 Surface-modified colloidal ceria abrasive particle, preparing method of the same and polishing slurry composition comprising the same
JP6720791B2 (en) 2016-09-13 2020-07-08 Ａｇｃ株式会社 Abrasive, polishing method, and polishing additive
WO2018062403A1 (en) * 2016-09-29 2018-04-05 花王株式会社 Polishing liquid composition
KR102619722B1 (en) 2016-10-27 2024-01-02 삼성디스플레이 주식회사 Method of manufacturing transistor array panel and polishing slurry used the same
WO2018088088A1 (en) * 2016-11-14 2018-05-17 日揮触媒化成株式会社 Ceria composite particle dispersion, method for producing same, and polishing abrasive grain dispersion comprising ceria composite particle dispersion
WO2019035161A1 (en) 2017-08-14 2019-02-21 日立化成株式会社 Polishing liquid, polishing liquid set and polishing method
CN111566179B (en) * 2017-11-15 2022-03-04 圣戈本陶瓷及塑料股份有限公司 Composition for performing material removal operations and method of forming the same
WO2020021680A1 (en) * 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
SG11202008797WA (en) * 2018-03-22 2020-10-29 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and polishing method
WO2020065723A1 (en) * 2018-09-25 2020-04-02 日立化成株式会社 Slurry and polishing method

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Publication number Publication date
CN112640053A (en) 2021-04-09
WO2020021730A1 (en) 2020-01-30
US11492526B2 (en) 2022-11-08
CN112930585A (en) 2021-06-08
TWI771603B (en) 2022-07-21
TW202010822A (en) 2020-03-16
US11505731B2 (en) 2022-11-22
TWI804659B (en) 2023-06-11
JPWO2020021730A1 (en) 2021-08-02
KR20210027467A (en) 2021-03-10
JPWO2020021731A1 (en) 2021-08-05
TWI811406B (en) 2023-08-11
KR20210029227A (en) 2021-03-15
SG11202100586PA (en) 2021-03-30
US20210261821A1 (en) 2021-08-26
KR20210027466A (en) 2021-03-10
US11499078B2 (en) 2022-11-15
TWI804661B (en) 2023-06-11
SG11202100567YA (en) 2021-03-30
WO2020021729A1 (en) 2020-01-30
US11518920B2 (en) 2022-12-06
TW202020957A (en) 2020-06-01
KR20210029229A (en) 2021-03-15
JPWO2020021733A1 (en) 2021-08-02
SG11202100589TA (en) 2021-03-30
TW202012588A (en) 2020-04-01
JPWO2020022290A1 (en) 2021-08-12
KR102637046B1 (en) 2024-02-14
KR20210029228A (en) 2021-03-15
SG11202100636YA (en) 2021-03-30
TW202010820A (en) 2020-03-16
JP6965999B2 (en) 2021-11-10
US20210246346A1 (en) 2021-08-12
US20210309884A1 (en) 2021-10-07
US20210301179A1 (en) 2021-09-30
JP6965998B2 (en) 2021-11-10
JP6965996B2 (en) 2021-11-10
JP6966000B2 (en) 2021-11-10
WO2020022290A1 (en) 2020-01-30
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