WO2020021733A1 - スラリ及びそのスクリーニング方法、並びに、研磨方法 - Google Patents
スラリ及びそのスクリーニング方法、並びに、研磨方法 Download PDFInfo
- Publication number
- WO2020021733A1 WO2020021733A1 PCT/JP2018/035485 JP2018035485W WO2020021733A1 WO 2020021733 A1 WO2020021733 A1 WO 2020021733A1 JP 2018035485 W JP2018035485 W JP 2018035485W WO 2020021733 A1 WO2020021733 A1 WO 2020021733A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- slurry
- mass
- particles
- abrasive grains
- metal
- Prior art date
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 162
- 238000005498 polishing Methods 0.000 title claims abstract description 154
- 238000000034 method Methods 0.000 title claims description 51
- 238000012216 screening Methods 0.000 title claims description 14
- 239000006061 abrasive grain Substances 0.000 claims abstract description 115
- 239000007788 liquid Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims abstract description 18
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 8
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims description 31
- 229910052684 Cerium Inorganic materials 0.000 claims description 19
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 238000001420 photoelectron spectroscopy Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 description 211
- 239000011810 insulating material Substances 0.000 description 68
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 56
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 49
- 229910000420 cerium oxide Inorganic materials 0.000 description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 239000000463 material Substances 0.000 description 29
- 229910052814 silicon oxide Inorganic materials 0.000 description 25
- -1 cerium ions Chemical class 0.000 description 24
- 239000000758 substrate Substances 0.000 description 24
- 239000000126 substance Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 230000009471 action Effects 0.000 description 11
- 239000000654 additive Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 9
- 150000001785 cerium compounds Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 150000000703 Cerium Chemical class 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 8
- 239000000872 buffer Substances 0.000 description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 150000001450 anions Chemical class 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 239000011246 composite particle Substances 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229920003169 water-soluble polymer Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 229920001515 polyalkylene glycol Polymers 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 3
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical group C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000006174 pH buffer Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 2
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910020203 CeO Inorganic materials 0.000 description 1
- 239000001879 Curdlan Substances 0.000 description 1
- 229920002558 Curdlan Polymers 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- VRZFDJOWKAFVOO-UHFFFAOYSA-N [O-][Si]([O-])([O-])O.[B+3].P Chemical compound [O-][Si]([O-])([O-])O.[B+3].P VRZFDJOWKAFVOO-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000008351 acetate buffer Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 235000010419 agar Nutrition 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000005011 alkyl ether group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005102 attenuated total reflection Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229940078035 curdlan Drugs 0.000 description 1
- 235000019316 curdlan Nutrition 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical group OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229940093920 gynecological arsenic compound Drugs 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000001139 pH measurement Methods 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Definitions
- the polishing rate of the insulating material can be improved, and the insulating material can be polished at a high polishing rate.
- the weight average molecular weight in the present specification can be measured, for example, by gel permeation chromatography (GPC) using a standard polystyrene calibration curve under the following conditions.
- Equipment used Hitachi L-6000 type [manufactured by Hitachi, Ltd.]
- Flow rate 1.75 mL / min
- Detector L-3300RI [manufactured by Hitachi, Ltd.]
- Cerium hydroxide can be produced by reacting a cerium salt with an alkali source (base).
- Cerium hydroxide can be prepared by mixing a cerium salt and an alkaline liquid (eg, an alkaline aqueous solution).
- Cerium hydroxide can be obtained by mixing a cerium salt solution (for example, a cerium salt aqueous solution) and an alkali solution.
- the cerium salt include Ce (NO 3 ) 4 , Ce (SO 4 ) 2 , Ce (NH 4 ) 2 (NO 3 ) 6 , Ce (NH 4 ) 4 (SO 4 ) 4 and the like.
- Examples of the material having a carboxyl group include monocarboxylic acids such as acetic acid, propionic acid, butyric acid, and valeric acid; hydroxy acids such as lactic acid, malic acid, and citric acid; and dicarboxylic acids such as malonic acid, succinic acid, fumaric acid, and maleic acid.
- Monocarboxylic acids such as acetic acid, propionic acid, butyric acid, and valeric acid
- hydroxy acids such as lactic acid, malic acid, and citric acid
- dicarboxylic acids such as malonic acid, succinic acid, fumaric acid, and maleic acid.
- Polycarboxylic acids such as polyacrylic acid and polymaleic acid
- amino acids such as arginine, histidine and lysine.
- the lower limit of the pH of the slurry according to this embodiment is preferably 2.0 or more, more preferably 2.5 or more, still more preferably 2.8 or more, from the viewpoint of further improving the polishing rate of the insulating material.
- the above is particularly preferred.
- the lower limit of the pH may be not less than 3.2, not less than 3.5, not less than 4.0, not less than 4.2, and not less than 4.3.
- the upper limit of the pH is preferably 7.0 or less from the viewpoint of further improving the storage stability of the slurry.
- the upper limit of the pH may be 6.5 or less, may be 6.0 or less, may be 5.0 or less, may be 4.8 or less, may be 4.7 or less, It may be 4.6 or less, may be 4.5 or less, and may be 4.4 or less. From the above viewpoint, the pH is more preferably from 2.0 to 7.0.
- the pH of the slurry is defined as the pH at a liquid temperature of 25 ° C.
- the pH of the slurry according to the present embodiment can be measured with a pH meter (for example, model number PHL-40 manufactured by Toa DKK Ltd.). Specifically, for example, after two-point calibration of a pH meter using a phthalate pH buffer (pH: 4.01) and a neutral phosphate pH buffer (pH: 6.86) as a standard buffer, The electrode of the pH meter is put in the slurry, and the value is measured after 2 minutes or more have passed and stabilized. The temperature of both the standard buffer and the slurry is 25 ° C.
- the slurry screening method may include, after the measuring step, a determining step of determining the ratio of the valence obtained in the measuring step.
- a determining step of determining the ratio of the valence obtained in the measuring step for example, a slurry that gives a valence ratio of 0.13 or more is selected.
- cerium oxide slurry An appropriate amount of cerium oxide slurry was charged into Beckman Coulter Co., Ltd. trade name: DelsaNano @ C, and the measurement was performed twice at 25 ° C. The average value of the indicated zeta potential was obtained as the zeta potential.
- the zeta potential of the cerium oxide particles in the cerium oxide slurry was -55 mV.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
本明細書において、「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書に段階的に記載されている数値範囲において、ある段階の数値範囲の上限値又は下限値は、他の段階の数値範囲の上限値又は下限値と任意に組み合わせることができる。本明細書に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。「A又はB」とは、A及びBのどちらか一方を含んでいればよく、両方とも含んでいてもよい。本明細書に例示する材料は、特に断らない限り、1種を単独で又は2種以上を組み合わせて用いることができる。本明細書において、組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。「工程」との語は、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の作用が達成されれば、本用語に含まれる。
使用機器:日立L-6000型[株式会社日立製作所製]
カラム:ゲルパックGL-R420+ゲルパックGL-R430+ゲルパックGL-R440[日立化成株式会社製 商品名、計3本]
溶離液:テトラヒドロフラン
測定温度:40℃
流量:1.75mL/min
検出器:L-3300RI[株式会社日立製作所製]
本実施形態に係るスラリは、必須成分として砥粒と液状媒体とを含有する。本実施形態に係るスラリは、例えば、研磨液(CMP研磨液)として用いることができる。
本実施形態に係るスラリの砥粒は、金属酸化物及び金属水酸化物からなる群より選ばれる少なくとも一種の金属化合物を含み、前記金属化合物が、複数の価数を取り得る金属(以下、「金属M」という)を含む。すなわち、砥粒は、金属Mを含む酸化物、及び、金属Mを含む水酸化物からなる群より選ばれる少なくとも一種を含む。
吸光度 =-LOG10(光透過率[%]/100)
液状媒体としては、特に制限はないが、脱イオン水、超純水等の水が好ましい。液状媒体の含有量は、他の構成成分の含有量を除いたスラリの残部でよく、特に限定されない。
本実施形態に係るスラリは、任意の添加剤を更に含有していてもよい。任意の添加剤としては、カルボキシル基を有する材料(ポリオキシアルキレン化合物又は水溶性高分子に該当する化合物を除く)、ポリオキシアルキレン化合物、水溶性高分子、酸化剤(例えば過酸化水素)、分散剤(例えばリン酸系無機塩)等が挙げられる。添加剤のそれぞれは、一種を単独で又は二種以上を組み合わせて使用することができる。
本実施形態に係るスラリは、絶縁材料の研磨速度が向上する観点から、当該スラリを被研磨面に接触させることにより砥粒を被研磨面(基体の被研磨面等)に接触させたときに、金属Mの複数の価数の中で最も小さい価数の割合としてX線光電子分光法において0.13以上を与える。前記価数の割合は、被研磨面に接触した砥粒(被研磨面上に存在する砥粒)の金属Mにおける価数の割合である。前記価数の割合は、金属Mの全量(全原子)を1とした場合の割合であり、対象の価数を有する原子の数の割合(単位:at%)である。前記価数の割合は、実施例に記載の方法により測定できる。X線光電子分光スペクトルのピーク位置は、化学シフトに起因して、価数に応じて異なる。一方、それぞれのピークの原子数と、ピークの面積とは比例する。従って、スペクトルの形状に基づき、各価数の原子の個数の比が得られる。金属Mの価数の調整方法としては、砥粒に酸化処理又は還元処理を施す方法等が挙げられる。酸化処理の方法としては、酸化作用を有する試薬で砥粒を処理する方法;空気中又は酸素雰囲気下で高温処理する方法等が挙げられる。還元処理の方法としては、還元作用を有する試薬で砥粒を処理する方法;水素等の還元雰囲気下で高温処理する方法などが挙げられる。
本実施形態に係るスラリのスクリーニング方法(スラリの選択方法)は、砥粒及び液状媒体を含有するスラリを被研磨面(基体の被研磨面等)に接触させることにより前記砥粒を前記被研磨面に接触させる接触工程と、前記被研磨面に前記砥粒が接触した状態で、前記砥粒に含まれる金属の価数をX線光電子分光法により測定する測定工程と、を備え、前記砥粒が、金属酸化物及び金属水酸化物からなる群より選ばれる少なくとも一種の金属化合物を含み、前記金属化合物が、複数の価数を取り得る金属を含み、前記測定工程において、前記金属の前記複数の価数の中で最も小さい価数の割合を得る。本実施形態に係るスラリのスクリーニング方法では、絶縁材料の研磨速度を向上させることが可能なスラリを選定できる。
本実施形態に係る研磨方法(基体の研磨方法等)は、本実施形態に係るスラリのスクリーニング方法の測定工程において得られる価数の割合として0.13以上を与えるスラリを用いて被研磨面(基体の被研磨面等)を研磨する研磨工程を備えている。
セリウム酸化物を含む粒子(第1の粒子。以下、「セリウム酸化物粒子」という)と、和光純薬工業株式会社製の商品名:リン酸二水素アンモニウム(分子量:97.99)とを混合して、セリウム酸化物粒子を5.0質量%(固形分含量)含有するセリウム酸化物スラリ(pH:7)を調製した。リン酸二水素アンモニウムの配合量は、セリウム酸化物粒子の全量を基準として1質量%に調整した。
(セリウム水酸化物の合成)
480gのCe(NH4)2(NO3)650質量%水溶液(日本化学産業株式会社製、商品名:CAN50液)を7450gの純水と混合して溶液を得た。次いで、この溶液を撹拌しながら、750gのイミダゾール水溶液(10質量%水溶液、1.47mol/L)を5mL/minの混合速度で滴下して、セリウム水酸化物を含む沈殿物を得た。セリウム水酸化物の合成は、温度20℃、撹拌速度500min-1で行った。撹拌は、羽根部全長5cmの3枚羽根ピッチパドルを用いて行った。
ベックマン・コールター株式会社製、商品名:N5を用いてセリウム水酸化物スラリにおけるセリウム水酸化物粒子の平均粒径(平均二次粒径)を測定したところ、10nmであった。測定法は次のとおりである。まず、1.0質量%のセリウム水酸化物粒子を含む測定サンプル(セリウム水酸化物スラリ。水分散液)を1cm角のセルに約1mL入れた後、N5内にセルを設置した。N5のソフトの測定サンプル情報の屈折率を1.333、粘度を0.887mPa・sに設定し、25℃において測定を行い、Unimodal Size Meanとして表示される値を読み取った。
ベックマン・コールター株式会社製の商品名:DelsaNano C内に適量のセリウム水酸化物スラリを投入し、25℃において測定を2回行った。表示されたゼータ電位の平均値をゼータ電位として得た。セリウム水酸化物スラリにおけるセリウム水酸化物粒子のゼータ電位は+50mVであった。
セリウム水酸化物スラリを適量採取し、真空乾燥してセリウム水酸化物粒子を単離した後に純水で充分に洗浄して試料を得た。得られた試料について、FT-IR ATR法による測定を行ったところ、水酸化物イオン(OH-)に基づくピークの他に、硝酸イオン(NO3 -)に基づくピークが観測された。また、同試料について、窒素に対するXPS(N-XPS)測定を行ったところ、NH4 +に基づくピークは観測されず、硝酸イオンに基づくピークが観測された。これらの結果より、セリウム水酸化物粒子は、セリウム元素に結合した硝酸イオンを有する粒子を少なくとも一部含有することが確認された。また、セリウム元素に結合した水酸化物イオンを有する粒子がセリウム水酸化物粒子の少なくとも一部に含有されることから、セリウム水酸化物粒子がセリウム水酸化物を含有することが確認された。これらの結果より、セリウムの水酸化物が、セリウム元素に結合した水酸化物イオンを含むことが確認された。
(実施例1)
2枚羽根の撹拌羽根を用いて300rpmの回転数で撹拌しながら、前記セリウム水酸化物スラリと、イオン交換水とを混合して混合液を得た。続いて、前記混合液を撹拌しながら前記セリウム酸化物スラリを前記混合液に混合した後、株式会社エスエヌディ製の超音波洗浄機(装置名:US-105)を用いて超音波を照射しながら撹拌した。これにより、セリウム酸化物粒子と、当該セリウム酸化物粒子に接触したセリウム水酸化物粒子と、を含む複合粒子を含有するCMPスラリを調製した。CMPスラリにおける砥粒の含有量(総量)は0.2質量%であり、セリウム酸化物粒子及びセリウム水酸化物粒子の質量比は10:1(酸化物:水酸化物)であった。
2枚羽根の撹拌羽根を用いて300rpmの回転数で撹拌しながら前記セリウム水酸化物スラリ400gとイオン交換水1600gとを混合した後、株式会社エスエヌディ製の超音波洗浄機(装置名:US-105)を用いて超音波を照射しながら撹拌した。これにより、セリウム水酸化物粒子を含有するCMPスラリ(セリウム水酸化物粒子の含有量:0.2質量%)を調製した。
砥粒としてセリア粒子(実施例1のセリウム酸化物粒子とは異なるセリウム酸化物粒子A)を準備した。セリア粒子とイオン交換水とを混合することによりCMPスラリ(砥粒の含有量:0.2質量%)を調製した。
砥粒としてセリア粒子(実施例1のセリウム酸化物粒子及びセリウム酸化物粒子Aとは異なるセリウム酸化物粒子B)を準備した。セリア粒子とイオン交換水とを混合することによりCMPスラリ(砥粒の含有量:0.2質量%)を調製した。
砥粒としてセリア粒子(実施例1のセリウム酸化物粒子及びセリウム酸化物粒子A,Bとは異なるセリウム酸化物粒子C)を準備した。セリア粒子とイオン交換水とを混合することによりCMPスラリ(砥粒の含有量:0.2質量%)を調製した。
前記セリウム水酸化物スラリを乾燥した後にセリウム水酸化物粒子を180℃で24時間保持した。次に、このセリウム水酸化物粒子とイオン交換水とを混合した。これにより、砥粒としてセリウム水酸化物粒子を含有するCMPスラリ(砥粒の含有量:0.2質量%)を調製した。
ベックマン・コールター株式会社製の遠心分離機(商品名:Optima MAX-TL)を用いてCMPスラリ(砥粒の含有量:0.2質量%)を遠心加速度1.1×104Gで30分間処理することにより固相及び液相(上澄み液)を分離した。液相を除去した後、固相を25℃で24時間真空乾燥することにより測定試料を得た。この測定試料中の砥粒に含まれるセリウムの価数AをX線光電子分光法により測定した。
[XPS条件]
パスエネルギー:100eV
積算回数:10回
結合エネルギー:870~930eVの範囲
励起X線:monochromatic Al Kα1,2線(1486.6eV)
X線径:200μm
光電子脱出角度:45°
3価の割合 = (3価の量[at%]/(3価の量[at%]+4価の量[at%])
CMPスラリのpHを東亜ディーケーケー株式会社製の型番PHL-40を用いて測定した。測定結果を表1に示す。
ベックマン・コールター株式会社製の商品名「DelsaNano C」内に適量のCMPスラリを投入した。25℃において測定を2回行い、表示されたゼータ電位の平均値を採用した。測定結果を表1に示す。
マイクロトラック・ベル株式会社製の商品名:マイクロトラックMT3300EXII内に実施例1、4の各CMPスラリ(砥粒の含有量:0.2質量%)を適量投入し、砥粒の平均粒径の測定を行った。また、ベックマン・コールター株式会社製の商品名:N5内に実施例2、3及び比較例1、2の各CMPスラリ(砥粒の含有量:0.2質量%)を適量投入し、砥粒の平均粒径の測定を行った。表示された平均粒径値を砥粒の平均粒径(平均二次粒径)として得た。測定結果を表1に示す。
上述の各CMPスラリ(砥粒の含有量:0.2質量%)を用いて、下記研磨条件で、上述の価数の評価で用いた被研磨基板を研磨した。
[CMP研磨条件]
研磨装置:MIRRA(APPLIED MATERIALS社製)
CMPスラリの流量:200mL/min
研磨パッド:独立気泡を有する発泡ポリウレタン樹脂(ダウ・ケミカル日本株式会社製、型番IC1010)
研磨圧力:13kPa(2.0psi)
被研磨基板及び研磨定盤の回転数:被研磨基板/研磨定盤=93/87rpm
研磨時間:1min
ウエハの洗浄:CMP処理後、超音波を印加しながら水で洗浄し、さらに、スピンドライヤで乾燥させた。
研磨速度(RR)=(研磨前後での酸化珪素膜の膜厚差[nm])/(研磨時間:1[min])
Claims (8)
- 砥粒及び液状媒体を含有するスラリであって、
前記砥粒が、金属酸化物及び金属水酸化物からなる群より選ばれる少なくとも一種の金属化合物を含み、
前記金属化合物が、複数の価数を取り得る金属を含み、
前記スラリが、当該スラリを被研磨面に接触させることにより前記砥粒を前記被研磨面に接触させたときに、前記金属の前記複数の価数の中で最も小さい価数の割合としてX線光電子分光法において0.13以上を与える、スラリ。 - 前記最も小さい価数が3価である、請求項1に記載のスラリ。
- 前記金属が希土類金属を含む、請求項1又は2に記載のスラリ。
- 前記金属がセリウムを含む、請求項1~3のいずれか一項に記載のスラリ。
- 前記スラリ中における前記砥粒のゼータ電位が+10mV以上である、請求項1~4のいずれか一項に記載のスラリ。
- 前記被研磨面が、珪素、アルミニウム、コバルト、銅、ガリウム、ゲルマニウム、ヒ素、ルテニウム、インジウム、スズ、ハフニウム、タリウム、タングステン及び白金からなる群より選ばれる少なくとも一種を含む、請求項1~5のいずれか一項に記載のスラリ。
- 砥粒及び液状媒体を含有するスラリを被研磨面に接触させることにより前記砥粒を前記被研磨面に接触させる工程と、
前記被研磨面に前記砥粒が接触した状態で、前記砥粒に含まれる金属の価数をX線光電子分光法により測定する測定工程と、を備え、
前記砥粒が、金属酸化物及び金属水酸化物からなる群より選ばれる少なくとも一種の金属化合物を含み、
前記金属化合物が、複数の価数を取り得る金属を含み、
前記測定工程において、前記金属の前記複数の価数の中で最も小さい価数の割合を得る、スラリのスクリーニング方法。 - 請求項7に記載のスラリのスクリーニング方法の前記測定工程において得られる前記価数の割合として0.13以上を与えるスラリを用いて前記被研磨面を研磨する工程を備える、研磨方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020532134A JP6989020B2 (ja) | 2018-07-26 | 2018-09-25 | スラリ及びそのスクリーニング方法、並びに、研磨方法 |
CN201880097068.2A CN112930585A (zh) | 2018-07-26 | 2018-09-25 | 浆料及其筛选方法、以及研磨方法 |
US17/263,089 US20210309884A1 (en) | 2018-07-26 | 2018-09-25 | Slurry, screening method, and polishing method |
KR1020217003393A KR102580184B1 (ko) | 2018-07-26 | 2018-09-25 | 슬러리와 그 스크리닝 방법, 및 연마 방법 |
SG11202100636YA SG11202100636YA (en) | 2018-07-26 | 2018-09-25 | Slurry, screening method, and polishing method |
TW108126169A TWI835824B (zh) | 2018-07-26 | 2019-07-24 | 研漿及其篩選方法以及研磨方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/028105 WO2020021680A1 (ja) | 2018-07-26 | 2018-07-26 | スラリ及び研磨方法 |
JPPCT/JP2018/028105 | 2018-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020021733A1 true WO2020021733A1 (ja) | 2020-01-30 |
Family
ID=69180670
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/028105 WO2020021680A1 (ja) | 2018-03-22 | 2018-07-26 | スラリ及び研磨方法 |
PCT/JP2018/035441 WO2020021730A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ、研磨液の製造方法、及び、研磨方法 |
PCT/JP2018/035485 WO2020021733A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ及びそのスクリーニング方法、並びに、研磨方法 |
PCT/JP2018/035443 WO2020021731A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ、研磨液の製造方法、及び、研磨方法 |
PCT/JP2018/035438 WO2020021729A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ及び研磨方法 |
PCT/JP2018/035463 WO2020021732A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ及び研磨方法 |
PCT/JP2019/028712 WO2020022290A1 (ja) | 2018-07-26 | 2019-07-22 | スラリ及び研磨方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/028105 WO2020021680A1 (ja) | 2018-03-22 | 2018-07-26 | スラリ及び研磨方法 |
PCT/JP2018/035441 WO2020021730A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ、研磨液の製造方法、及び、研磨方法 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/035443 WO2020021731A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ、研磨液の製造方法、及び、研磨方法 |
PCT/JP2018/035438 WO2020021729A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ及び研磨方法 |
PCT/JP2018/035463 WO2020021732A1 (ja) | 2018-07-26 | 2018-09-25 | スラリ及び研磨方法 |
PCT/JP2019/028712 WO2020022290A1 (ja) | 2018-07-26 | 2019-07-22 | スラリ及び研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (6) | US11505731B2 (ja) |
JP (6) | JP6989020B2 (ja) |
KR (6) | KR102589117B1 (ja) |
CN (6) | CN112640052A (ja) |
SG (6) | SG11202100586PA (ja) |
TW (6) | TWI804659B (ja) |
WO (7) | WO2020021680A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020021680A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
CN112740366A (zh) * | 2018-09-25 | 2021-04-30 | 昭和电工材料株式会社 | 浆料及研磨方法 |
US20230191554A1 (en) * | 2020-04-27 | 2023-06-22 | Konica Minolta, Inc. | Polishing system |
KR102453292B1 (ko) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | 산화세륨 복합분말의 분산 조성물 |
EP4053882A4 (en) * | 2021-01-06 | 2022-10-26 | Showa Denko Materials Co., Ltd. | POLISHING FLUID, POLISHING FLUID SET AND POLISHING METHOD |
US11650939B2 (en) * | 2021-02-02 | 2023-05-16 | Dell Products L.P. | Managing access to peripherals in a containerized environment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05138142A (ja) * | 1990-08-20 | 1993-06-01 | Hitachi Ltd | 液中微粒子付着制御法 |
WO2014208414A1 (ja) * | 2013-06-27 | 2014-12-31 | コニカミノルタ株式会社 | 酸化セリウム研磨材、酸化セリウム研磨材の製造方法及び研磨加工方法 |
WO2016006553A1 (ja) * | 2014-07-09 | 2016-01-14 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
JP2017203076A (ja) * | 2016-05-10 | 2017-11-16 | 日立化成株式会社 | Cmp研磨剤及びこれを用いた研磨方法 |
Family Cites Families (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4941430B1 (ja) | 1970-08-25 | 1974-11-08 | ||
US5409544A (en) * | 1990-08-20 | 1995-04-25 | Hitachi, Ltd. | Method of controlling adhesion of fine particles to an object in liquid |
US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
JP3278532B2 (ja) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
TW311905B (ja) | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
KR100336598B1 (ko) | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | 산화 세륨 연마제 제조용 산화 세륨 입자 |
JPH10154672A (ja) * | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JPH10106994A (ja) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
TW571361B (en) * | 2001-02-20 | 2004-01-11 | Hitachi Chemical Co Ltd | Polishing agent and method for polishing a substrate |
JPWO2002067309A1 (ja) * | 2001-02-20 | 2004-06-24 | 日立化成工業株式会社 | 研磨剤及び基板の研磨方法 |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
KR20040080935A (ko) * | 2002-02-20 | 2004-09-20 | 니혼 미크로 코팅 가부시끼 가이샤 | 연마 슬러리 |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US6939211B2 (en) | 2003-10-09 | 2005-09-06 | Micron Technology, Inc. | Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions |
US7112123B2 (en) | 2004-06-14 | 2006-09-26 | Amcol International Corporation | Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces |
US20050119360A1 (en) | 2003-11-28 | 2005-06-02 | Kabushiki Kaisha Kobe Seiko Sho | Method for producing porous material |
JP2006249129A (ja) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | 研磨剤の製造方法及び研磨剤 |
US7655057B2 (en) | 2005-08-31 | 2010-02-02 | Fujimi Incorporated | Polishing composition and polishing method |
JP5105869B2 (ja) | 2006-04-27 | 2012-12-26 | 花王株式会社 | 研磨液組成物 |
JP2013141041A (ja) * | 2006-10-04 | 2013-07-18 | Hitachi Chemical Co Ltd | 基板の研磨方法 |
JP2008112990A (ja) | 2006-10-04 | 2008-05-15 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP5281758B2 (ja) * | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | 研磨用組成物 |
EP2260013B1 (en) * | 2008-02-12 | 2018-12-19 | Saint-Gobain Ceramics & Plastics, Inc. | Ceria material and method of forming same |
KR101184731B1 (ko) * | 2008-03-20 | 2012-09-20 | 주식회사 엘지화학 | 산화세륨 제조 방법, 이로부터 얻어진 산화세륨 및 이를 포함하는 cmp슬러리 |
CN101550318B (zh) * | 2008-04-03 | 2012-11-14 | 北京有色金属研究总院 | 一种含Ce3+的稀土抛光粉及其制备方法 |
CN105368397B (zh) | 2008-04-23 | 2017-11-03 | 日立化成株式会社 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
JP5287174B2 (ja) * | 2008-04-30 | 2013-09-11 | 日立化成株式会社 | 研磨剤及び研磨方法 |
KR101678114B1 (ko) * | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법 |
JP2010153781A (ja) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
JP2010153782A (ja) * | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
CN103342986B (zh) | 2008-12-11 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
KR20140027561A (ko) * | 2009-06-09 | 2014-03-06 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기판의 연마 방법 |
KR101380098B1 (ko) | 2009-07-16 | 2014-04-01 | 히타치가세이가부시끼가이샤 | 팔라듐 연마용 cmp 연마액 및 연마 방법 |
JP2011054906A (ja) | 2009-09-04 | 2011-03-17 | Hitachi Chem Co Ltd | スラリーの保存方法及び保存容器 |
CN102473622B (zh) | 2009-10-22 | 2013-10-16 | 日立化成株式会社 | 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法 |
JP2011142284A (ja) | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp研磨液、基板の研磨方法及び電子部品 |
SG188460A1 (en) | 2010-09-08 | 2013-04-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
US9039796B2 (en) | 2010-11-22 | 2015-05-26 | Hitachi Chemical Company, Ltd. | Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid |
JP5590144B2 (ja) * | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
SG190058A1 (en) * | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
CN103339219B (zh) | 2011-01-25 | 2015-01-14 | 日立化成株式会社 | Cmp研磨液及其制造方法、复合粒子的制造方法以及基体的研磨方法 |
JP2012186339A (ja) | 2011-03-07 | 2012-09-27 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
JPWO2013035545A1 (ja) * | 2011-09-09 | 2015-03-23 | 旭硝子株式会社 | 研磨砥粒およびその製造方法、研磨スラリー並びにガラス製品の製造方法 |
JP2015088495A (ja) | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
JP5943073B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
KR102137293B1 (ko) | 2012-08-30 | 2020-07-23 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
JP2014060205A (ja) | 2012-09-14 | 2014-04-03 | Fujimi Inc | 研磨用組成物 |
WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
JP6139975B2 (ja) | 2013-05-15 | 2017-05-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2014199739A1 (ja) | 2013-06-12 | 2014-12-18 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
US10131819B2 (en) * | 2013-08-30 | 2018-11-20 | Hitachi Chemical Company, Ltd | Slurry, polishing solution set, polishing solution, and substrate polishing method |
WO2015052988A1 (ja) | 2013-10-10 | 2015-04-16 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
JP6223786B2 (ja) * | 2013-11-12 | 2017-11-01 | 花王株式会社 | 硬脆材料用研磨液組成物 |
KR102138406B1 (ko) | 2013-12-26 | 2020-07-27 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
JP6360311B2 (ja) | 2014-01-21 | 2018-07-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびその製造方法 |
KR101613359B1 (ko) * | 2014-07-15 | 2016-04-27 | 에스케이하이닉스 주식회사 | 화학적 기계적 연마용 나노 세리아 슬러리 조성물 및 이의 제조방법 |
JP6435689B2 (ja) | 2014-07-25 | 2018-12-12 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
US20170183537A1 (en) | 2014-08-26 | 2017-06-29 | K.C. Tech Co., Ltd | Polishing slurry composition |
JP5893700B1 (ja) * | 2014-09-26 | 2016-03-23 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
JP2016069535A (ja) | 2014-09-30 | 2016-05-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法 |
US9422455B2 (en) | 2014-12-12 | 2016-08-23 | Cabot Microelectronics Corporation | CMP compositions exhibiting reduced dishing in STI wafer polishing |
JP2016154208A (ja) | 2015-02-12 | 2016-08-25 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
KR102583709B1 (ko) | 2015-03-10 | 2023-09-26 | 가부시끼가이샤 레조낙 | 연마제, 연마제용 저장액 및 연마 방법 |
KR101773543B1 (ko) * | 2015-06-30 | 2017-09-01 | 유비머트리얼즈주식회사 | 연마 입자, 연마 슬러리 및 연마 입자의 제조 방법 |
KR101761792B1 (ko) * | 2015-07-02 | 2017-07-26 | 주식회사 케이씨텍 | Sti 연마용 슬러리 조성물 |
US11046869B2 (en) * | 2015-09-09 | 2021-06-29 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and substrate polishing method |
JP6570382B2 (ja) * | 2015-09-09 | 2019-09-04 | デンカ株式会社 | 研磨用シリカ添加剤及びそれを用いた方法 |
JP6645136B2 (ja) * | 2015-11-20 | 2020-02-12 | 日立化成株式会社 | 半導体基板の製造方法及び洗浄液 |
JP2017110177A (ja) | 2015-12-14 | 2017-06-22 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
KR101737938B1 (ko) | 2015-12-15 | 2017-05-19 | 주식회사 케이씨텍 | 다기능성 연마 슬러리 조성물 |
JP6589622B2 (ja) * | 2015-12-22 | 2019-10-16 | 日立化成株式会社 | 研磨液、研磨方法、半導体基板及び電子機器 |
KR101761789B1 (ko) | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물 |
KR20180112004A (ko) | 2016-02-16 | 2018-10-11 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 시스템 및 그의 제조 방법 및 사용 방법 |
US20190256742A1 (en) * | 2016-07-15 | 2019-08-22 | Fujimi Incorporated | Polishing composition, method for producing polishing composition, and polishing method |
KR101823083B1 (ko) | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
JP6720791B2 (ja) | 2016-09-13 | 2020-07-08 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
KR20190055112A (ko) * | 2016-09-29 | 2019-05-22 | 카오카부시키가이샤 | 연마액 조성물 |
KR102619722B1 (ko) | 2016-10-27 | 2024-01-02 | 삼성디스플레이 주식회사 | 트랜지스터 표시판의 제조 방법 및 이에 이용되는 연마 슬러리 |
KR102268320B1 (ko) * | 2016-11-14 | 2021-06-22 | 니끼 쇼꾸바이 카세이 가부시키가이샤 | 세리아계 복합미립자 분산액, 그의 제조방법 및 세리아계 복합미립자 분산액을 포함하는 연마용 지립분산액 |
WO2019035161A1 (ja) | 2017-08-14 | 2019-02-21 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
JP7071495B2 (ja) * | 2017-11-15 | 2022-05-19 | サン-ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 材料除去操作を行うための組成物及びその形成方法 |
JP6973620B2 (ja) * | 2018-03-22 | 2021-12-01 | 昭和電工マテリアルズ株式会社 | 研磨液、研磨液セット及び研磨方法 |
WO2020021680A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
CN112740366A (zh) * | 2018-09-25 | 2021-04-30 | 昭和电工材料株式会社 | 浆料及研磨方法 |
-
2018
- 2018-07-26 WO PCT/JP2018/028105 patent/WO2020021680A1/ja active Application Filing
- 2018-09-25 KR KR1020217003476A patent/KR102589117B1/ko active IP Right Grant
- 2018-09-25 KR KR1020217003467A patent/KR102637046B1/ko active IP Right Grant
- 2018-09-25 SG SG11202100586PA patent/SG11202100586PA/en unknown
- 2018-09-25 WO PCT/JP2018/035441 patent/WO2020021730A1/ja active Application Filing
- 2018-09-25 CN CN201880097112.XA patent/CN112640052A/zh active Pending
- 2018-09-25 CN CN201880097200.XA patent/CN112640053A/zh active Pending
- 2018-09-25 SG SG11202100636YA patent/SG11202100636YA/en unknown
- 2018-09-25 JP JP2020532134A patent/JP6989020B2/ja active Active
- 2018-09-25 SG SG11202100610RA patent/SG11202100610RA/en unknown
- 2018-09-25 CN CN201880097107.9A patent/CN112640051A/zh active Pending
- 2018-09-25 SG SG11202100589TA patent/SG11202100589TA/en unknown
- 2018-09-25 US US17/262,640 patent/US11505731B2/en active Active
- 2018-09-25 KR KR1020217003477A patent/KR102589118B1/ko active IP Right Grant
- 2018-09-25 JP JP2020532132A patent/JP6965998B2/ja active Active
- 2018-09-25 KR KR1020217003478A patent/KR102589119B1/ko active IP Right Grant
- 2018-09-25 JP JP2020532133A patent/JP6965999B2/ja active Active
- 2018-09-25 US US17/262,633 patent/US11499078B2/en active Active
- 2018-09-25 US US17/262,646 patent/US20210301179A1/en active Pending
- 2018-09-25 CN CN201880097068.2A patent/CN112930585A/zh active Pending
- 2018-09-25 WO PCT/JP2018/035485 patent/WO2020021733A1/ja active Application Filing
- 2018-09-25 KR KR1020217003393A patent/KR102580184B1/ko active IP Right Grant
- 2018-09-25 JP JP2020532130A patent/JP6965996B2/ja active Active
- 2018-09-25 WO PCT/JP2018/035443 patent/WO2020021731A1/ja active Application Filing
- 2018-09-25 US US17/262,143 patent/US11492526B2/en active Active
- 2018-09-25 CN CN201880097067.8A patent/CN112640050A/zh active Pending
- 2018-09-25 JP JP2020532131A patent/JP6965997B2/ja active Active
- 2018-09-25 SG SG11202100567YA patent/SG11202100567YA/en unknown
- 2018-09-25 WO PCT/JP2018/035438 patent/WO2020021729A1/ja active Application Filing
- 2018-09-25 WO PCT/JP2018/035463 patent/WO2020021732A1/ja active Application Filing
- 2018-09-25 US US17/263,089 patent/US20210309884A1/en active Pending
-
2019
- 2019-07-22 WO PCT/JP2019/028712 patent/WO2020022290A1/ja active Application Filing
- 2019-07-22 US US17/263,082 patent/US11518920B2/en active Active
- 2019-07-22 KR KR1020217003466A patent/KR102676956B1/ko active IP Right Grant
- 2019-07-22 CN CN201980057982.9A patent/CN112655075A/zh active Pending
- 2019-07-22 JP JP2020532391A patent/JP6966000B2/ja active Active
- 2019-07-22 SG SG11202100627YA patent/SG11202100627YA/en unknown
- 2019-07-24 TW TW108126208A patent/TWI804659B/zh active
- 2019-07-24 TW TW108126243A patent/TWI804661B/zh active
- 2019-07-24 TW TW108126193A patent/TWI771603B/zh active
- 2019-07-24 TW TW108126190A patent/TWI811406B/zh active
- 2019-07-24 TW TW108126169A patent/TWI835824B/zh active
- 2019-07-24 TW TW108126222A patent/TWI804660B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05138142A (ja) * | 1990-08-20 | 1993-06-01 | Hitachi Ltd | 液中微粒子付着制御法 |
WO2014208414A1 (ja) * | 2013-06-27 | 2014-12-31 | コニカミノルタ株式会社 | 酸化セリウム研磨材、酸化セリウム研磨材の製造方法及び研磨加工方法 |
WO2016006553A1 (ja) * | 2014-07-09 | 2016-01-14 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
JP2017203076A (ja) * | 2016-05-10 | 2017-11-16 | 日立化成株式会社 | Cmp研磨剤及びこれを用いた研磨方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6989020B2 (ja) | スラリ及びそのスクリーニング方法、並びに、研磨方法 | |
JPWO2019182061A1 (ja) | 研磨液、研磨液セット及び研磨方法 | |
JP6888744B2 (ja) | スラリ及び研磨方法 | |
JPWO2018179062A1 (ja) | 研磨液、研磨液セット、添加液及び研磨方法 | |
JP6708994B2 (ja) | スラリ及び研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18927803 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2020532134 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20217003393 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18927803 Country of ref document: EP Kind code of ref document: A1 |