SG10201405722WA - Metal oxide etching solution composition and etching method - Google Patents
Metal oxide etching solution composition and etching methodInfo
- Publication number
- SG10201405722WA SG10201405722WA SG10201405722WA SG10201405722WA SG10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA
- Authority
- SG
- Singapore
- Prior art keywords
- metal oxide
- solution composition
- etching
- etching solution
- etching method
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 2
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10128—Display
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10128—Display
- H05K2201/10136—Liquid Crystal display [LCD]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013193440A JP6261926B2 (ja) | 2013-09-18 | 2013-09-18 | 金属酸化物エッチング液組成物およびエッチング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201405722WA true SG10201405722WA (en) | 2015-04-29 |
Family
ID=52666935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201405722WA SG10201405722WA (en) | 2013-09-18 | 2014-09-15 | Metal oxide etching solution composition and etching method |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150075850A1 (zh) |
JP (1) | JP6261926B2 (zh) |
KR (1) | KR102319261B1 (zh) |
CN (2) | CN111286333A (zh) |
SG (1) | SG10201405722WA (zh) |
TW (1) | TWI645018B (zh) |
Families Citing this family (13)
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TWI558850B (zh) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | 電子零件用處理液及電子零件之製造方法 |
JP6417612B2 (ja) * | 2014-12-01 | 2018-11-07 | メック株式会社 | エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法 |
WO2017098369A1 (en) * | 2015-12-11 | 2017-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, semiconductor device, and display device |
CN105369251A (zh) * | 2015-12-16 | 2016-03-02 | 无锡吉进环保科技有限公司 | 一种基于纳米二氧化硫的电路板用蚀刻液 |
KR101725204B1 (ko) * | 2016-01-15 | 2017-04-12 | 풍원화학(주) | 금속 산화물의 선택적 식각액 |
KR102362556B1 (ko) * | 2016-03-25 | 2022-02-14 | 동우 화인켐 주식회사 | 인듐 산화막용 식각 조성물 |
JP2017216444A (ja) * | 2016-05-31 | 2017-12-07 | ナガセケムテックス株式会社 | エッチング液 |
KR102459686B1 (ko) * | 2016-06-24 | 2022-10-27 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
JP6769760B2 (ja) | 2016-07-08 | 2020-10-14 | 関東化学株式会社 | エッチング液組成物およびエッチング方法 |
US20180358468A1 (en) * | 2017-06-08 | 2018-12-13 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Fabrication method of thin film transistor, array substrate, and liquid crystal display panel |
CN107564809B (zh) * | 2017-08-04 | 2019-11-12 | 深圳市华星光电半导体显示技术有限公司 | Igzo膜层的蚀刻液及其蚀刻方法 |
CN108650801B (zh) * | 2018-04-02 | 2020-07-10 | 皆利士多层线路版(中山)有限公司 | 厚铜线路板的沉金方法 |
US20230274946A1 (en) * | 2022-02-28 | 2023-08-31 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
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JPH0448631A (ja) * | 1990-06-14 | 1992-02-18 | Fujitsu Ltd | 透明導電膜のエッチング方法 |
JPH07141932A (ja) * | 1993-11-18 | 1995-06-02 | Kanto Chem Co Inc | 透明導電膜のエッチング液組成物 |
KR100381054B1 (ko) * | 1999-12-28 | 2003-04-18 | 엘지.필립스 엘시디 주식회사 | 인듐-징크-옥사이드로 적용된 투명전극과 이를 에칭하기위한 에천트 |
JP2002033303A (ja) * | 2000-07-14 | 2002-01-31 | Mitsubishi Gas Chem Co Inc | エッチング用組成物 |
JP2002033304A (ja) * | 2000-07-14 | 2002-01-31 | Mitsubishi Gas Chem Co Inc | エッチング用組成物 |
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EP1187225B1 (en) * | 2000-09-08 | 2006-11-15 | Kanto Kagaku Kabushiki Kaisha | Etching liquid composition |
JP2002217164A (ja) * | 2001-01-17 | 2002-08-02 | Nagase Kasei Kogyo Kk | エッチング液組成物 |
JP2005116542A (ja) * | 2002-03-25 | 2005-04-28 | Nagase Chemtex Corp | エッチング液組成物 |
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JP2004240091A (ja) * | 2003-02-05 | 2004-08-26 | Idemitsu Kosan Co Ltd | 半透過半反射型電極基板の製造方法 |
JP2004356616A (ja) * | 2003-05-28 | 2004-12-16 | Samsung Electronics Co Ltd | 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法 |
JP2005277402A (ja) * | 2004-02-25 | 2005-10-06 | Mitsubishi Gas Chem Co Inc | 反射電極膜を含む積層膜のエッチング組成物および積層配線構造の形成方法 |
US7329365B2 (en) * | 2004-08-25 | 2008-02-12 | Samsung Electronics Co., Ltd. | Etchant composition for indium oxide layer and etching method using the same |
DE102005035255A1 (de) * | 2005-07-25 | 2007-02-01 | Merck Patent Gmbh | Ätzmedien für oxidische, transparente, leitfähige Schichten |
KR20070017762A (ko) * | 2005-08-08 | 2007-02-13 | 엘지.필립스 엘시디 주식회사 | 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법 |
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KR101402189B1 (ko) | 2007-06-22 | 2014-06-02 | 삼성전자주식회사 | Zn 산화물계 박막 트랜지스터 및 Zn 산화물의 식각용액 |
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KR20090082772A (ko) | 2008-01-28 | 2009-07-31 | 주식회사 동진쎄미켐 | 산화 인듐 주석막 식각용 식각액 조성물 및 이를 이용한산화 인듐 주석막 식각 방법 |
JP5354989B2 (ja) | 2008-08-14 | 2013-11-27 | 関東化学株式会社 | 透明導電膜用エッチング液組成物 |
JP2010067823A (ja) | 2008-09-11 | 2010-03-25 | Asahi Kasei Electronics Co Ltd | エッチング液組成物 |
JP2010103214A (ja) | 2008-10-22 | 2010-05-06 | Hayashi Junyaku Kogyo Kk | 導電膜用エッチング液組成物 |
JP2011138937A (ja) | 2009-12-28 | 2011-07-14 | Showa Denko Kk | 透明導電膜用エッチング液 |
TWI451539B (zh) * | 2010-08-05 | 2014-09-01 | Advanced Semiconductor Eng | 半導體封裝件及其製造方法 |
JP5700784B2 (ja) | 2010-12-15 | 2015-04-15 | 株式会社Adeka | エッチング液組成物 |
JP5845501B2 (ja) * | 2011-10-06 | 2016-01-20 | 日本表面化学株式会社 | 透明導電性薄膜積層体のエッチング液 |
KR101922625B1 (ko) * | 2012-07-03 | 2018-11-28 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
JP6044337B2 (ja) * | 2012-12-28 | 2016-12-14 | 三菱瓦斯化学株式会社 | インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法 |
KR102087791B1 (ko) * | 2013-03-27 | 2020-03-12 | 삼성디스플레이 주식회사 | 식각 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조방법 |
-
2013
- 2013-09-18 JP JP2013193440A patent/JP6261926B2/ja active Active
-
2014
- 2014-09-15 SG SG10201405722WA patent/SG10201405722WA/en unknown
- 2014-09-17 KR KR1020140123362A patent/KR102319261B1/ko active IP Right Grant
- 2014-09-17 TW TW103132169A patent/TWI645018B/zh active
- 2014-09-18 CN CN202010096805.6A patent/CN111286333A/zh active Pending
- 2014-09-18 CN CN201410478206.5A patent/CN104449739B/zh active Active
- 2014-09-18 US US14/489,528 patent/US20150075850A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP6261926B2 (ja) | 2018-01-17 |
TWI645018B (zh) | 2018-12-21 |
CN104449739B (zh) | 2020-04-21 |
KR20150032487A (ko) | 2015-03-26 |
US20150075850A1 (en) | 2015-03-19 |
JP2015060937A (ja) | 2015-03-30 |
CN111286333A (zh) | 2020-06-16 |
KR102319261B1 (ko) | 2021-10-29 |
CN104449739A (zh) | 2015-03-25 |
TW201520309A (zh) | 2015-06-01 |
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