SG10201405722WA - Metal oxide etching solution composition and etching method - Google Patents

Metal oxide etching solution composition and etching method

Info

Publication number
SG10201405722WA
SG10201405722WA SG10201405722WA SG10201405722WA SG10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA SG 10201405722W A SG10201405722W A SG 10201405722WA
Authority
SG
Singapore
Prior art keywords
metal oxide
solution composition
etching
etching solution
etching method
Prior art date
Application number
SG10201405722WA
Other languages
English (en)
Inventor
Takuo Ohwada
Toshikazu Shimizu
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG10201405722WA publication Critical patent/SG10201405722WA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/032Materials
    • H05K2201/0326Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10128Display
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10128Display
    • H05K2201/10136Liquid Crystal display [LCD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
SG10201405722WA 2013-09-18 2014-09-15 Metal oxide etching solution composition and etching method SG10201405722WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013193440A JP6261926B2 (ja) 2013-09-18 2013-09-18 金属酸化物エッチング液組成物およびエッチング方法

Publications (1)

Publication Number Publication Date
SG10201405722WA true SG10201405722WA (en) 2015-04-29

Family

ID=52666935

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201405722WA SG10201405722WA (en) 2013-09-18 2014-09-15 Metal oxide etching solution composition and etching method

Country Status (6)

Country Link
US (1) US20150075850A1 (zh)
JP (1) JP6261926B2 (zh)
KR (1) KR102319261B1 (zh)
CN (2) CN111286333A (zh)
SG (1) SG10201405722WA (zh)
TW (1) TWI645018B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
JP6417612B2 (ja) * 2014-12-01 2018-11-07 メック株式会社 エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法
WO2017098369A1 (en) * 2015-12-11 2017-06-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and display device
CN105369251A (zh) * 2015-12-16 2016-03-02 无锡吉进环保科技有限公司 一种基于纳米二氧化硫的电路板用蚀刻液
KR101725204B1 (ko) * 2016-01-15 2017-04-12 풍원화학(주) 금속 산화물의 선택적 식각액
KR102362556B1 (ko) * 2016-03-25 2022-02-14 동우 화인켐 주식회사 인듐 산화막용 식각 조성물
JP2017216444A (ja) * 2016-05-31 2017-12-07 ナガセケムテックス株式会社 エッチング液
KR102459686B1 (ko) * 2016-06-24 2022-10-27 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
JP6769760B2 (ja) 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
US20180358468A1 (en) * 2017-06-08 2018-12-13 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Fabrication method of thin film transistor, array substrate, and liquid crystal display panel
CN107564809B (zh) * 2017-08-04 2019-11-12 深圳市华星光电半导体显示技术有限公司 Igzo膜层的蚀刻液及其蚀刻方法
CN108650801B (zh) * 2018-04-02 2020-07-10 皆利士多层线路版(中山)有限公司 厚铜线路板的沉金方法
US20230274946A1 (en) * 2022-02-28 2023-08-31 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448631A (ja) * 1990-06-14 1992-02-18 Fujitsu Ltd 透明導電膜のエッチング方法
JPH07141932A (ja) * 1993-11-18 1995-06-02 Kanto Chem Co Inc 透明導電膜のエッチング液組成物
KR100381054B1 (ko) * 1999-12-28 2003-04-18 엘지.필립스 엘시디 주식회사 인듐-징크-옥사이드로 적용된 투명전극과 이를 에칭하기위한 에천트
JP2002033303A (ja) * 2000-07-14 2002-01-31 Mitsubishi Gas Chem Co Inc エッチング用組成物
JP2002033304A (ja) * 2000-07-14 2002-01-31 Mitsubishi Gas Chem Co Inc エッチング用組成物
JP3345408B2 (ja) 2000-09-08 2002-11-18 関東化学株式会社 エッチング液組成物
EP1187225B1 (en) * 2000-09-08 2006-11-15 Kanto Kagaku Kabushiki Kaisha Etching liquid composition
JP2002217164A (ja) * 2001-01-17 2002-08-02 Nagase Kasei Kogyo Kk エッチング液組成物
JP2005116542A (ja) * 2002-03-25 2005-04-28 Nagase Chemtex Corp エッチング液組成物
JP2004048631A (ja) * 2002-09-12 2004-02-12 Toyo Commun Equip Co Ltd 圧電発振器
JP2004137586A (ja) * 2002-10-21 2004-05-13 Mitsubishi Chemicals Corp エッチング液及びエッチング方法
JP2004240091A (ja) * 2003-02-05 2004-08-26 Idemitsu Kosan Co Ltd 半透過半反射型電極基板の製造方法
JP2004356616A (ja) * 2003-05-28 2004-12-16 Samsung Electronics Co Ltd 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
JP2005277402A (ja) * 2004-02-25 2005-10-06 Mitsubishi Gas Chem Co Inc 反射電極膜を含む積層膜のエッチング組成物および積層配線構造の形成方法
US7329365B2 (en) * 2004-08-25 2008-02-12 Samsung Electronics Co., Ltd. Etchant composition for indium oxide layer and etching method using the same
DE102005035255A1 (de) * 2005-07-25 2007-02-01 Merck Patent Gmbh Ätzmedien für oxidische, transparente, leitfähige Schichten
KR20070017762A (ko) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법
KR101276966B1 (ko) * 2005-11-21 2013-06-19 이데미쓰 고산 가부시키가이샤 투명 도전막 및 그것을 이용한 기판, 전자 기기 및 액정표시 장치
KR101299131B1 (ko) * 2006-05-10 2013-08-22 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각 조성물
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5328083B2 (ja) 2006-08-01 2013-10-30 キヤノン株式会社 酸化物のエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
TWI421937B (zh) 2006-09-13 2014-01-01 Nagase Chemtex Corp 蝕刻液組成物
JP4961251B2 (ja) * 2007-04-19 2012-06-27 林純薬工業株式会社 導電膜用エッチング液組成物
KR101402189B1 (ko) 2007-06-22 2014-06-02 삼성전자주식회사 Zn 산화물계 박막 트랜지스터 및 Zn 산화물의 식각용액
CN101952485A (zh) 2007-11-22 2011-01-19 出光兴产株式会社 蚀刻液组合物
KR20090082772A (ko) 2008-01-28 2009-07-31 주식회사 동진쎄미켐 산화 인듐 주석막 식각용 식각액 조성물 및 이를 이용한산화 인듐 주석막 식각 방법
JP5354989B2 (ja) 2008-08-14 2013-11-27 関東化学株式会社 透明導電膜用エッチング液組成物
JP2010067823A (ja) 2008-09-11 2010-03-25 Asahi Kasei Electronics Co Ltd エッチング液組成物
JP2010103214A (ja) 2008-10-22 2010-05-06 Hayashi Junyaku Kogyo Kk 導電膜用エッチング液組成物
JP2011138937A (ja) 2009-12-28 2011-07-14 Showa Denko Kk 透明導電膜用エッチング液
TWI451539B (zh) * 2010-08-05 2014-09-01 Advanced Semiconductor Eng 半導體封裝件及其製造方法
JP5700784B2 (ja) 2010-12-15 2015-04-15 株式会社Adeka エッチング液組成物
JP5845501B2 (ja) * 2011-10-06 2016-01-20 日本表面化学株式会社 透明導電性薄膜積層体のエッチング液
KR101922625B1 (ko) * 2012-07-03 2018-11-28 삼성디스플레이 주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
JP6044337B2 (ja) * 2012-12-28 2016-12-14 三菱瓦斯化学株式会社 インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法
KR102087791B1 (ko) * 2013-03-27 2020-03-12 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조방법

Also Published As

Publication number Publication date
JP6261926B2 (ja) 2018-01-17
TWI645018B (zh) 2018-12-21
CN104449739B (zh) 2020-04-21
KR20150032487A (ko) 2015-03-26
US20150075850A1 (en) 2015-03-19
JP2015060937A (ja) 2015-03-30
CN111286333A (zh) 2020-06-16
KR102319261B1 (ko) 2021-10-29
CN104449739A (zh) 2015-03-25
TW201520309A (zh) 2015-06-01

Similar Documents

Publication Publication Date Title
SG10201405722WA (en) Metal oxide etching solution composition and etching method
ZA201508189B (en) Doped metal oxide nanoparticles of and uses thereof
HUE053410T2 (hu) Alkalmazási eljárás és alkalmazási berendezés
SG10201710610PA (en) Etching agent, etching method and etching agent preparation liquid
EP2952097A4 (en) COMPOSITION AND METHOD FOR COMBATING HARMFUL ANIMALS
EP2801862A4 (en) TRANSPARENT SUBSTRATE COMPRISING A FINE METAL LINE AND METHOD OF MANUFACTURING THE SAME
EP2952100A4 (en) PEST CONTROL COMPOSITION AND PEST CONTROL METHODS
EP2886589A4 (en) MOLD METAL LAMINATE AND PROCESS FOR PRODUCING THE SAME
EP2952099A4 (en) PEST CONTROL COMPOSITION AND PEST CONTROL METHODS
GB201305414D0 (en) Method and composition
GB2588536B (en) Metal oxide cement
EP2982042A4 (en) TERMINAL AND ITS CONTROL METHOD
GB201300376D0 (en) Method and compound
HK1204697A1 (zh) 種表單處理方法和終端
SG11201601261SA (en) Etching method
EP2827363A4 (en) ACTION COMPOSITION AND METHODS OF PROCESSING
SG11201600696PA (en) Etching method
EP2971241A4 (en) ANISOTROPIC CONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
GB201302726D0 (en) Method for producing titanium oxide and iron oxide
HK1205207A1 (zh) 銀合金成份與過程
EP3007180A4 (en) SUPERCONDUCTING OXIDE AND METHOD FOR PRODUCING THE SAME
GB201322931D0 (en) Method of etching
TWI562198B (en) Forming method and substrate
ZA201505570B (en) Method and composition for preventing oxidation
HK1198183A1 (zh) 金屬氧化膜的製造方法和金屬氧化膜