SE523917C2 - Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC - Google Patents

Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC

Info

Publication number
SE523917C2
SE523917C2 SE0202992A SE0202992A SE523917C2 SE 523917 C2 SE523917 C2 SE 523917C2 SE 0202992 A SE0202992 A SE 0202992A SE 0202992 A SE0202992 A SE 0202992A SE 523917 C2 SE523917 C2 SE 523917C2
Authority
SE
Sweden
Prior art keywords
crystal
sic
cultured
plane
culture
Prior art date
Application number
SE0202992A
Other languages
English (en)
Swedish (sv)
Other versions
SE0202992D0 (sv
SE0202992L (sv
Inventor
Daisuke Nakamura
Tadashi Ito
Hiroyuki Kondo
Masami Naito
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001315367A external-priority patent/JP3745668B2/ja
Priority claimed from JP2002080295A external-priority patent/JP3750622B2/ja
Priority claimed from JP2002128725A external-priority patent/JP3776374B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of SE0202992D0 publication Critical patent/SE0202992D0/xx
Publication of SE0202992L publication Critical patent/SE0202992L/xx
Publication of SE523917C2 publication Critical patent/SE523917C2/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SE0202992A 2001-10-12 2002-10-10 Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC SE523917C2 (sv)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001315367A JP3745668B2 (ja) 2001-10-12 2001-10-12 ＳｉＣ単結晶の製造方法並びにＳｉＣ種結晶の製造方法
JP2002080295A JP3750622B2 (ja) 2002-03-22 2002-03-22 エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
JP2002128725A JP3776374B2 (ja) 2002-04-30 2002-04-30 ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法

Publications (3)

Publication Number Publication Date
SE0202992D0 SE0202992D0 (sv) 2002-10-10
SE0202992L SE0202992L (sv) 2003-04-13
SE523917C2 true SE523917C2 (sv) 2004-06-01

Family

ID=27347679

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0202992A SE523917C2 (sv) 2001-10-12 2002-10-10 Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC

Country Status (3)

Country Link
US (1) US6890600B2 (de)
DE (1) DE10247017B4 (de)
SE (1) SE523917C2 (de)

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DE102005017814B4 (de) * 2004-04-19 2016-08-11 Denso Corporation Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
EP1855312B1 (de) * 2005-02-22 2014-04-09 Hitachi Metals, Ltd. Prozess zur herstellung eines sic-einkristallsubstrats
US7387680B2 (en) * 2005-05-13 2008-06-17 Cree, Inc. Method and apparatus for the production of silicon carbide crystals
JP2007197231A (ja) * 2006-01-24 2007-08-09 Toyota Motor Corp ＳｉＣ単結晶の製造方法
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
KR101145234B1 (ko) * 2006-05-18 2012-05-25 쇼와 덴코 가부시키가이샤 탄화 규소 단결정의 제조방법
EP2264223A3 (de) * 2006-09-14 2011-10-26 Cree, Inc. Mikroröhrchen-freies Siliciumcarbid und Verfahren zu seiner Herstellung
WO2008089181A2 (en) * 2007-01-16 2008-07-24 Ii-Vi Incorporated Guided diameter sic sublimation growth with multi-layer growth guide
US7994027B2 (en) * 2008-05-09 2011-08-09 George Mason Intellectual Properties, Inc. Microwave heating for semiconductor nanostructure fabrication
WO2010024390A1 (ja) * 2008-08-29 2010-03-04 住友金属工業株式会社 ＳｉＣ単結晶膜の製造方法および装置
JP2010087397A (ja) * 2008-10-02 2010-04-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
EP2432002A4 (de) * 2009-05-11 2012-11-21 Sumitomo Electric Industries Siliciumcarbidsubstrat und halbleiterbauelement
US8017412B2 (en) * 2009-10-10 2011-09-13 Widetronix, Inc. Betavoltaic battery with a shallow junction and a method for making same
JP5343889B2 (ja) 2010-02-19 2013-11-13 株式会社デンソー 炭化珪素基板の製造方法
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
JP5276068B2 (ja) 2010-08-26 2013-08-28 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
JP5189156B2 (ja) 2010-11-29 2013-04-24 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
CN102686787B (zh) * 2010-12-27 2017-12-15 住友电气工业株式会社 碳化硅衬底、半导体器件、制造碳化硅衬底的方法和制造半导体器件的方法
JP5803265B2 (ja) * 2011-05-20 2015-11-04 住友電気工業株式会社 炭化珪素基板および炭化珪素インゴットの製造方法
JP6039888B2 (ja) 2011-06-05 2016-12-07 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
CN103608497B (zh) 2011-07-04 2016-10-12 丰田自动车株式会社 SiC单晶及其制造方法
JP5267709B2 (ja) * 2011-09-14 2013-08-21 株式会社豊田中央研究所 高耐熱部材、その製造方法、黒鉛ルツボおよび単結晶インゴットの製造方法
US8912550B2 (en) * 2011-12-22 2014-12-16 Sumitomo Electric Industries, Ltd. Dislocations in SiC semiconductor substrate
CN104246026B (zh) 2012-04-20 2017-05-31 丰田自动车株式会社 SiC单晶及其制造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
JP5811977B2 (ja) 2012-09-18 2015-11-11 株式会社デンソー 炭化珪素半導体装置
JP5692195B2 (ja) 2012-10-02 2015-04-01 株式会社デンソー 炭化珪素単結晶、炭化珪素半導体基板およびその製造方法
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
JP5857986B2 (ja) 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6597065B2 (ja) 2015-08-31 2019-10-30 株式会社デンソー 炭化珪素単結晶、炭化珪素単結晶ウェハ、炭化珪素単結晶エピタキシャルウェハ、電子デバイス
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP6635585B2 (ja) 2015-12-03 2020-01-29 昭和電工株式会社 ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶及びＳｉＣインゴット
DE112017000725T5 (de) 2016-02-09 2018-10-31 Sumitomo Electric Industries, Ltd. Siliziumkarbit-Einkristallsubstrat
JP6132058B2 (ja) * 2016-07-01 2017-05-24 住友電気工業株式会社 半導体基板
JP6721062B2 (ja) * 2017-02-16 2020-07-08 信越化学工業株式会社 化合物半導体積層基板及びその製造方法、並びに半導体素子
JP6784220B2 (ja) * 2017-04-14 2020-11-11 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
DE102022100661A1 (de) 2022-01-12 2023-07-13 Forschungsverbund Berlin E.V. Verfahren und Vorrichtung zum Herstellen einer Halbleiterstruktur

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Also Published As

Publication number Publication date
DE10247017A1 (de) 2003-08-07
DE10247017B4 (de) 2009-06-10
US20030070611A1 (en) 2003-04-17
SE0202992D0 (sv) 2002-10-10
SE0202992L (sv) 2003-04-13
US6890600B2 (en) 2005-05-10

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