SE0202992L - Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC - Google Patents
Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiCInfo
- Publication number
- SE0202992L SE0202992L SE0202992A SE0202992A SE0202992L SE 0202992 L SE0202992 L SE 0202992L SE 0202992 A SE0202992 A SE 0202992A SE 0202992 A SE0202992 A SE 0202992A SE 0202992 L SE0202992 L SE 0202992L
- Authority
- SE
- Sweden
- Prior art keywords
- sic
- single crystal
- producing
- epitaxial layer
- disc
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001315367A JP3745668B2 (ja) | 2001-10-12 | 2001-10-12 | SiC単結晶の製造方法並びにSiC種結晶の製造方法 |
JP2002080295A JP3750622B2 (ja) | 2002-03-22 | 2002-03-22 | エピタキシャル膜付きSiCウエハ及びその製造方法並びにSiC電子デバイス |
JP2002128725A JP3776374B2 (ja) | 2002-04-30 | 2002-04-30 | SiC単結晶の製造方法,並びにエピタキシャル膜付きSiCウエハの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0202992D0 SE0202992D0 (sv) | 2002-10-10 |
SE0202992L true SE0202992L (sv) | 2003-04-13 |
SE523917C2 SE523917C2 (sv) | 2004-06-01 |
Family
ID=27347679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0202992A SE523917C2 (sv) | 2001-10-12 | 2002-10-10 | Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC |
Country Status (3)
Country | Link |
---|---|
US (1) | US6890600B2 (sv) |
DE (1) | DE10247017B4 (sv) |
SE (1) | SE523917C2 (sv) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005017814B4 (de) * | 2004-04-19 | 2016-08-11 | Denso Corporation | Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
EP1855312B1 (en) * | 2005-02-22 | 2014-04-09 | Hitachi Metals, Ltd. | PROCESS FOR PRODUCING SiC SINGLE-CRYSTAL SUBSTRATE |
US7387680B2 (en) * | 2005-05-13 | 2008-06-17 | Cree, Inc. | Method and apparatus for the production of silicon carbide crystals |
JP2007197231A (ja) * | 2006-01-24 | 2007-08-09 | Toyota Motor Corp | SiC単結晶の製造方法 |
US20070169687A1 (en) * | 2006-01-26 | 2007-07-26 | Caracal, Inc. | Silicon carbide formation by alternating pulses |
KR101145234B1 (ko) * | 2006-05-18 | 2012-05-25 | 쇼와 덴코 가부시키가이샤 | 탄화 규소 단결정의 제조방법 |
EP2264223A3 (en) * | 2006-09-14 | 2011-10-26 | Cree, Inc. | Micropipe-free silicon carbide and related method of manufacture |
WO2008089181A2 (en) * | 2007-01-16 | 2008-07-24 | Ii-Vi Incorporated | Guided diameter sic sublimation growth with multi-layer growth guide |
US7994027B2 (en) * | 2008-05-09 | 2011-08-09 | George Mason Intellectual Properties, Inc. | Microwave heating for semiconductor nanostructure fabrication |
WO2010024390A1 (ja) * | 2008-08-29 | 2010-03-04 | 住友金属工業株式会社 | SiC単結晶膜の製造方法および装置 |
JP2010087397A (ja) * | 2008-10-02 | 2010-04-15 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
JP4978637B2 (ja) | 2009-02-12 | 2012-07-18 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
EP2432002A4 (en) * | 2009-05-11 | 2012-11-21 | Sumitomo Electric Industries | SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR ELEMENT |
US8017412B2 (en) * | 2009-10-10 | 2011-09-13 | Widetronix, Inc. | Betavoltaic battery with a shallow junction and a method for making same |
JP5343889B2 (ja) | 2010-02-19 | 2013-11-13 | 株式会社デンソー | 炭化珪素基板の製造方法 |
US8377806B2 (en) * | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
JP5276068B2 (ja) | 2010-08-26 | 2013-08-28 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
JP5189156B2 (ja) | 2010-11-29 | 2013-04-24 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
CN102686787B (zh) * | 2010-12-27 | 2017-12-15 | 住友电气工业株式会社 | 碳化硅衬底、半导体器件、制造碳化硅衬底的方法和制造半导体器件的方法 |
JP5803265B2 (ja) * | 2011-05-20 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素インゴットの製造方法 |
JP6039888B2 (ja) | 2011-06-05 | 2016-12-07 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
CN103608497B (zh) | 2011-07-04 | 2016-10-12 | 丰田自动车株式会社 | SiC单晶及其制造方法 |
JP5267709B2 (ja) * | 2011-09-14 | 2013-08-21 | 株式会社豊田中央研究所 | 高耐熱部材、その製造方法、黒鉛ルツボおよび単結晶インゴットの製造方法 |
US8912550B2 (en) * | 2011-12-22 | 2014-12-16 | Sumitomo Electric Industries, Ltd. | Dislocations in SiC semiconductor substrate |
CN104246026B (zh) | 2012-04-20 | 2017-05-31 | 丰田自动车株式会社 | SiC单晶及其制造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
JP5811977B2 (ja) | 2012-09-18 | 2015-11-11 | 株式会社デンソー | 炭化珪素半導体装置 |
JP5692195B2 (ja) | 2012-10-02 | 2015-04-01 | 株式会社デンソー | 炭化珪素単結晶、炭化珪素半導体基板およびその製造方法 |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
JP5857986B2 (ja) | 2013-02-20 | 2016-02-10 | 株式会社デンソー | 炭化珪素単結晶および炭化珪素単結晶の製造方法 |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
JP5854013B2 (ja) * | 2013-09-13 | 2016-02-09 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
JP6597065B2 (ja) | 2015-08-31 | 2019-10-30 | 株式会社デンソー | 炭化珪素単結晶、炭化珪素単結晶ウェハ、炭化珪素単結晶エピタキシャルウェハ、電子デバイス |
US20170275779A1 (en) * | 2015-10-07 | 2017-09-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
JP6635585B2 (ja) | 2015-12-03 | 2020-01-29 | 昭和電工株式会社 | SiC単結晶の製造方法、SiC単結晶及びSiCインゴット |
DE112017000725T5 (de) | 2016-02-09 | 2018-10-31 | Sumitomo Electric Industries, Ltd. | Siliziumkarbit-Einkristallsubstrat |
JP6132058B2 (ja) * | 2016-07-01 | 2017-05-24 | 住友電気工業株式会社 | 半導体基板 |
JP6721062B2 (ja) * | 2017-02-16 | 2020-07-08 | 信越化学工業株式会社 | 化合物半導体積層基板及びその製造方法、並びに半導体素子 |
JP6784220B2 (ja) * | 2017-04-14 | 2020-11-11 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
DE102022100661A1 (de) | 2022-01-12 | 2023-07-13 | Forschungsverbund Berlin E.V. | Verfahren und Vorrichtung zum Herstellen einer Halbleiterstruktur |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2804860B2 (ja) | 1991-04-18 | 1998-09-30 | 新日本製鐵株式会社 | SiC単結晶およびその成長方法 |
US5958132A (en) | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
JP3532978B2 (ja) * | 1994-11-21 | 2004-05-31 | 新日本製鐵株式会社 | SiC単結晶の成長方法 |
JPH10182297A (ja) * | 1996-12-24 | 1998-07-07 | Sumitomo Metal Mining Co Ltd | SiC単結晶の育成方法 |
JP3848446B2 (ja) * | 1997-09-30 | 2006-11-22 | 新日本製鐵株式会社 | 低抵抗SiC単結晶の育成方法 |
JP4253974B2 (ja) * | 1999-12-22 | 2009-04-15 | 住友電気工業株式会社 | SiC単結晶およびその成長方法 |
DE60335252D1 (de) * | 2002-04-04 | 2011-01-20 | Nippon Steel Corp | Impfkristall aus siliciumcarbid-einkristall und verfahren zur herstellung eines stabs damit |
-
2002
- 2002-10-09 DE DE10247017A patent/DE10247017B4/de not_active Expired - Lifetime
- 2002-10-10 US US10/268,103 patent/US6890600B2/en not_active Expired - Lifetime
- 2002-10-10 SE SE0202992A patent/SE523917C2/sv not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE10247017A1 (de) | 2003-08-07 |
DE10247017B4 (de) | 2009-06-10 |
US20030070611A1 (en) | 2003-04-17 |
SE0202992D0 (sv) | 2002-10-10 |
US6890600B2 (en) | 2005-05-10 |
SE523917C2 (sv) | 2004-06-01 |
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Legal Events
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NUG | Patent has lapsed |