WO2005047574A3 - Heteroepitaxieschicht und verfahren zu ihrer herstellung - Google Patents

Heteroepitaxieschicht und verfahren zu ihrer herstellung Download PDF

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Publication number
WO2005047574A3
WO2005047574A3 PCT/EP2004/012807 EP2004012807W WO2005047574A3 WO 2005047574 A3 WO2005047574 A3 WO 2005047574A3 EP 2004012807 W EP2004012807 W EP 2004012807W WO 2005047574 A3 WO2005047574 A3 WO 2005047574A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
substrate
heteroepitaxial layer
transition metal
buffer layer
Prior art date
Application number
PCT/EP2004/012807
Other languages
English (en)
French (fr)
Other versions
WO2005047574A2 (de
Inventor
Matthias Schreck
Stefan Gsell
Thomas Bauer
Johannes Golfuss
Bernd Stritzker
Original Assignee
Univ Augsburg
Matthias Schreck
Stefan Gsell
Thomas Bauer
Johannes Golfuss
Bernd Stritzker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Augsburg, Matthias Schreck, Stefan Gsell, Thomas Bauer, Johannes Golfuss, Bernd Stritzker filed Critical Univ Augsburg
Publication of WO2005047574A2 publication Critical patent/WO2005047574A2/de
Publication of WO2005047574A3 publication Critical patent/WO2005047574A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Die vorliegenden Erfindung betrifft ein Wachstumssubstrat zur Herstellung von nicht-diamantenen epitaktischen Schichten mit einem Substrat (2) aus einkristallinem Silizium, mindestens einer auf dem Substrat angeordneten epitaktischen, vorteilhafterweise oxidischen Pufferschicht sowie mindestens einer auf der Pufferschicht angeordneten Metallschicht (4) enthaltend oder bestehend aus einem Übergangsmetall der 4., 5. Und/oder 6. Periode mit einem Schmelzpunkt grösser oder gleich 1200 K.
PCT/EP2004/012807 2003-11-11 2004-11-11 Heteroepitaxieschicht und verfahren zu ihrer herstellung WO2005047574A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10352655.2 2003-11-11
DE2003152655 DE10352655A1 (de) 2003-11-11 2003-11-11 Heteroepitaxieschicht und Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
WO2005047574A2 WO2005047574A2 (de) 2005-05-26
WO2005047574A3 true WO2005047574A3 (de) 2005-09-22

Family

ID=34584982

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/012807 WO2005047574A2 (de) 2003-11-11 2004-11-11 Heteroepitaxieschicht und verfahren zu ihrer herstellung

Country Status (2)

Country Link
DE (1) DE10352655A1 (de)
WO (1) WO2005047574A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409336B (zh) * 2014-11-18 2017-07-14 中国科学院半导体研究所 一种利用低熔点金属消除外延层生长热失配的方法
DE102015200692B4 (de) 2015-01-19 2018-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Epitaktische Diamantschicht und Verfahren zu ihrer Herstellung
CN107534074B (zh) 2015-02-10 2020-08-14 艾宾姆材料公司 在ibad织构化衬底上的外延六方材料
USRE49869E1 (en) 2015-02-10 2024-03-12 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
US10243105B2 (en) 2015-02-10 2019-03-26 iBeam Materials, Inc. Group-III nitride devices and systems on IBAD-textured substrates
DE102016015010A1 (de) 2016-12-14 2018-06-14 Namlab Ggmbh Integrierte Schaltung, die eine ferroelektrische Speicherzelle enthält, und ein Herstellungsverfahren dafür

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072245A1 (en) * 2000-12-08 2002-06-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6501121B1 (en) * 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20030207589A1 (en) * 2002-05-03 2003-11-06 Thoughtbeam, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501121B1 (en) * 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20020072245A1 (en) * 2000-12-08 2002-06-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US20030207589A1 (en) * 2002-05-03 2003-11-06 Thoughtbeam, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate

Also Published As

Publication number Publication date
WO2005047574A2 (de) 2005-05-26
DE10352655A1 (de) 2005-06-30

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