WO2005047574A3 - Heteroepitaxieschicht und verfahren zu ihrer herstellung - Google Patents
Heteroepitaxieschicht und verfahren zu ihrer herstellung Download PDFInfo
- Publication number
- WO2005047574A3 WO2005047574A3 PCT/EP2004/012807 EP2004012807W WO2005047574A3 WO 2005047574 A3 WO2005047574 A3 WO 2005047574A3 EP 2004012807 W EP2004012807 W EP 2004012807W WO 2005047574 A3 WO2005047574 A3 WO 2005047574A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- production
- substrate
- heteroepitaxial layer
- transition metal
- buffer layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10352655.2 | 2003-11-11 | ||
DE2003152655 DE10352655A1 (de) | 2003-11-11 | 2003-11-11 | Heteroepitaxieschicht und Verfahren zu ihrer Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005047574A2 WO2005047574A2 (de) | 2005-05-26 |
WO2005047574A3 true WO2005047574A3 (de) | 2005-09-22 |
Family
ID=34584982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/012807 WO2005047574A2 (de) | 2003-11-11 | 2004-11-11 | Heteroepitaxieschicht und verfahren zu ihrer herstellung |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE10352655A1 (de) |
WO (1) | WO2005047574A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409336B (zh) * | 2014-11-18 | 2017-07-14 | 中国科学院半导体研究所 | 一种利用低熔点金属消除外延层生长热失配的方法 |
DE102015200692B4 (de) | 2015-01-19 | 2018-10-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Epitaktische Diamantschicht und Verfahren zu ihrer Herstellung |
CN107534074B (zh) | 2015-02-10 | 2020-08-14 | 艾宾姆材料公司 | 在ibad织构化衬底上的外延六方材料 |
USRE49869E1 (en) | 2015-02-10 | 2024-03-12 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
US10243105B2 (en) | 2015-02-10 | 2019-03-26 | iBeam Materials, Inc. | Group-III nitride devices and systems on IBAD-textured substrates |
DE102016015010A1 (de) | 2016-12-14 | 2018-06-14 | Namlab Ggmbh | Integrierte Schaltung, die eine ferroelektrische Speicherzelle enthält, und ein Herstellungsverfahren dafür |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020072245A1 (en) * | 2000-12-08 | 2002-06-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6501121B1 (en) * | 2000-11-15 | 2002-12-31 | Motorola, Inc. | Semiconductor structure |
US20030207589A1 (en) * | 2002-05-03 | 2003-11-06 | Thoughtbeam, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
-
2003
- 2003-11-11 DE DE2003152655 patent/DE10352655A1/de not_active Ceased
-
2004
- 2004-11-11 WO PCT/EP2004/012807 patent/WO2005047574A2/de active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6501121B1 (en) * | 2000-11-15 | 2002-12-31 | Motorola, Inc. | Semiconductor structure |
US20020072245A1 (en) * | 2000-12-08 | 2002-06-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US20030207589A1 (en) * | 2002-05-03 | 2003-11-06 | Thoughtbeam, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
Also Published As
Publication number | Publication date |
---|---|
WO2005047574A2 (de) | 2005-05-26 |
DE10352655A1 (de) | 2005-06-30 |
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