RU2640631C1 - Трехмерная адресация для стираемого программируемого постоянного запоминающего устройства - Google Patents

Трехмерная адресация для стираемого программируемого постоянного запоминающего устройства Download PDF

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Publication number
RU2640631C1
RU2640631C1 RU2016135221A RU2016135221A RU2640631C1 RU 2640631 C1 RU2640631 C1 RU 2640631C1 RU 2016135221 A RU2016135221 A RU 2016135221A RU 2016135221 A RU2016135221 A RU 2016135221A RU 2640631 C1 RU2640631 C1 RU 2640631C1
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RU
Russia
Prior art keywords
eprom
information signal
shift register
shift registers
memory
Prior art date
Application number
RU2016135221A
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English (en)
Russian (ru)
Inventor
Боон Бинг НГ
Ханг Ру ГОЙ
Original Assignee
Хьюлетт-Паккард Дивелопмент Компани, Л.П.
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Publication of RU2640631C1 publication Critical patent/RU2640631C1/ru

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
RU2016135221A 2014-01-31 2014-01-31 Трехмерная адресация для стираемого программируемого постоянного запоминающего устройства RU2640631C1 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Publications (1)

Publication Number Publication Date
RU2640631C1 true RU2640631C1 (ru) 2018-01-10

Family

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RU2016135221A RU2640631C1 (ru) 2014-01-31 2014-01-31 Трехмерная адресация для стираемого программируемого постоянного запоминающего устройства

Country Status (19)

Country Link
US (3) US9773556B2 (enExample)
EP (5) EP3236471A3 (enExample)
JP (1) JP6262355B2 (enExample)
KR (1) KR101942164B1 (enExample)
CN (2) CN105940454B (enExample)
AU (2) AU2014380279B2 (enExample)
BR (1) BR112016017343B1 (enExample)
CA (1) CA2938125C (enExample)
DK (1) DK3100273T3 (enExample)
ES (1) ES2784236T3 (enExample)
HU (1) HUE048477T2 (enExample)
MX (1) MX367147B (enExample)
PH (1) PH12016501490B1 (enExample)
PL (1) PL3100273T3 (enExample)
PT (1) PT3100273T (enExample)
RU (1) RU2640631C1 (enExample)
SG (1) SG11201605665VA (enExample)
WO (1) WO2015116129A1 (enExample)
ZA (1) ZA201605059B (enExample)

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CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
MX2019003858A (es) 2016-10-06 2019-06-10 Hewlett Packard Development Co Se?ales de control de entrada propagadas sobre trayectorias de se?al.
EP3554843B1 (en) * 2017-01-31 2022-01-19 Hewlett-Packard Development Company, L.P. Disposing memory banks and select register
CN110267817B (zh) 2017-01-31 2021-01-29 惠普发展公司，有限责任合伙企业 用于促进访问存储体中的存储器单元的装置
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
US11090926B2 (en) 2017-07-06 2021-08-17 Hewlett-Packard Development Company, L.P. Decoders for memories of fluid ejection devices
PT3758941T (pt) 2017-07-06 2021-07-02 Hewlett Packard Development Co Seletores para bicos e elementos de memória
EP3717253B1 (en) 2019-02-06 2022-05-11 Hewlett-Packard Development Company, L.P. Memories of fluidic dies
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit
KR20210104153A (ko) 2019-02-06 2021-08-24 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 메모리 회로를 갖는 프린트 컴포넌트
SG11202107300YA (en) 2019-02-06 2021-08-30 Hewlett Packard Development Co Lp Communicating print component

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US5029020A (en) * 1989-11-17 1991-07-02 Xerox Corporation Scanner with slow scan image context processing
RU2258010C2 (ru) * 1999-03-31 2005-08-10 Сейко Эпсон Корпорейшн Система печати, контроллер печати, печатающее устройство, способ управления операцией печати, способ печати, чернильный картридж, источник чернил и носитель записи
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US20100328405A1 (en) * 2008-03-14 2010-12-30 Ness Erik D Secure Access To Fluid Cartridge Memory

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Publication number Publication date
HUE048477T2 (hu) 2020-07-28
EP3896696A1 (en) 2021-10-20
EP3236471A3 (en) 2018-01-17
EP3258469B1 (en) 2021-10-06
ZA201605059B (en) 2017-09-27
ES2784236T3 (es) 2020-09-23
PH12016501490B1 (en) 2018-11-14
JP2017507404A (ja) 2017-03-16
AU2017210573A1 (en) 2017-08-24
KR101942164B1 (ko) 2019-01-24
CA2938125C (en) 2018-10-23
AU2014380279A1 (en) 2016-08-11
PH12016501490A1 (en) 2017-02-06
SG11201605665VA (en) 2016-08-30
CN105940454A (zh) 2016-09-14
AU2017210573B2 (en) 2019-04-11
EP3236471A2 (en) 2017-10-25
MX2016009841A (es) 2016-10-26
US20160343439A1 (en) 2016-11-24
US9928912B2 (en) 2018-03-27
US9773556B2 (en) 2017-09-26
US20170221566A1 (en) 2017-08-03
WO2015116129A1 (en) 2015-08-06
PL3100273T3 (pl) 2020-06-29
MX367147B (es) 2019-08-06
BR112016017343B1 (pt) 2022-01-04
US10340011B2 (en) 2019-07-02
JP6262355B2 (ja) 2018-01-17
KR20160104700A (ko) 2016-09-05
EP4468299A2 (en) 2024-11-27
EP3258469A1 (en) 2017-12-20
DK3100273T3 (da) 2020-04-06
BR112016017343A2 (enExample) 2017-08-08
PT3100273T (pt) 2020-04-13
CA2938125A1 (en) 2015-08-06
EP3100273A1 (en) 2016-12-07
EP3100273B1 (en) 2020-03-25
CN105940454B (zh) 2020-01-17
EP3100273A4 (en) 2017-12-13
US20180114579A1 (en) 2018-04-26
AU2014380279B2 (en) 2017-05-04
EP4468299A3 (en) 2025-02-26
CN111326202A (zh) 2020-06-23

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