MX367147B - Direccionamiento tridimensional para memoria de sólo lectura programable y borrable. - Google Patents

Direccionamiento tridimensional para memoria de sólo lectura programable y borrable.

Info

Publication number
MX367147B
MX367147B MX2016009841A MX2016009841A MX367147B MX 367147 B MX367147 B MX 367147B MX 2016009841 A MX2016009841 A MX 2016009841A MX 2016009841 A MX2016009841 A MX 2016009841A MX 367147 B MX367147 B MX 367147B
Authority
MX
Mexico
Prior art keywords
memory
programmable
erasable read
dimensional addressing
data signal
Prior art date
Application number
MX2016009841A
Other languages
English (en)
Other versions
MX2016009841A (es
Inventor
Bing NG Boon
Ru Goy Hang
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Publication of MX2016009841A publication Critical patent/MX2016009841A/es
Publication of MX367147B publication Critical patent/MX367147B/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

El direccionamiento tridimensional para memoria de sólo lectura programable y borrable (EPROM) puede incluir un número de bancos EPROM, un número de registros de desplazamiento, una señal de datos de selección de fila, una señal de datos de selección de columna, y una señal de datos de selección de banco.
MX2016009841A 2014-01-31 2014-01-31 Direccionamiento tridimensional para memoria de sólo lectura programable y borrable. MX367147B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Publications (2)

Publication Number Publication Date
MX2016009841A MX2016009841A (es) 2016-10-26
MX367147B true MX367147B (es) 2019-08-06

Family

ID=53757530

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016009841A MX367147B (es) 2014-01-31 2014-01-31 Direccionamiento tridimensional para memoria de sólo lectura programable y borrable.

Country Status (19)

Country Link
US (3) US9773556B2 (es)
EP (5) EP3100273B1 (es)
JP (1) JP6262355B2 (es)
KR (1) KR101942164B1 (es)
CN (2) CN111326202A (es)
AU (2) AU2014380279B2 (es)
BR (1) BR112016017343B1 (es)
CA (1) CA2938125C (es)
DK (1) DK3100273T3 (es)
ES (1) ES2784236T3 (es)
HU (1) HUE048477T2 (es)
MX (1) MX367147B (es)
PH (1) PH12016501490B1 (es)
PL (1) PL3100273T3 (es)
PT (1) PT3100273T (es)
RU (1) RU2640631C1 (es)
SG (1) SG11201605665VA (es)
WO (1) WO2015116129A1 (es)
ZA (1) ZA201605059B (es)

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* Cited by examiner, † Cited by third party
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EP3100273B1 (en) * 2014-01-31 2020-03-25 Hewlett-Packard Development Company, L.P. Three-dimensional addressing for erasable programmable read only memory
JP6726805B2 (ja) 2016-10-06 2020-07-22 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 信号経路を介して伝搬された入力制御信号
DK3554843T3 (da) * 2017-01-31 2022-04-04 Hewlett Packard Development Co Anbringelse af hukommelsesbanker og udvælgelsesregister
JP6832441B2 (ja) * 2017-01-31 2021-02-24 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． メモリバンク内のメモリユニットに対するアクセス
KR102284239B1 (ko) 2017-07-06 2021-08-02 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 노즐 및 메모리 요소의 선택기
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
US11090926B2 (en) 2017-07-06 2021-08-17 Hewlett-Packard Development Company, L.P. Decoders for memories of fluid ejection devices
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit
BR112021014728A2 (pt) 2019-02-06 2021-09-28 Hewlett-Packard Development Company, L.P. Componente de impressão com circuito de memória
CA3126693A1 (en) 2019-02-06 2020-08-13 Hewlett-Packard Development Company, L.P. Communicating print component
CN113316518B (zh) 2019-02-06 2022-10-14 惠普发展公司，有限责任合伙企业 流体分配设备部件及其形成方法、以及流体分配系统

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Also Published As

Publication number Publication date
ES2784236T3 (es) 2020-09-23
SG11201605665VA (en) 2016-08-30
EP3236471A3 (en) 2018-01-17
DK3100273T3 (da) 2020-04-06
PH12016501490B1 (en) 2018-11-14
EP3100273A4 (en) 2017-12-13
US20170221566A1 (en) 2017-08-03
CN105940454A (zh) 2016-09-14
EP3236471A2 (en) 2017-10-25
MX2016009841A (es) 2016-10-26
AU2014380279A1 (en) 2016-08-11
US20160343439A1 (en) 2016-11-24
US9928912B2 (en) 2018-03-27
AU2014380279B2 (en) 2017-05-04
CA2938125A1 (en) 2015-08-06
PH12016501490A1 (en) 2017-02-06
AU2017210573B2 (en) 2019-04-11
BR112016017343A2 (es) 2017-08-08
ZA201605059B (en) 2017-09-27
WO2015116129A1 (en) 2015-08-06
CN105940454B (zh) 2020-01-17
RU2640631C1 (ru) 2018-01-10
JP6262355B2 (ja) 2018-01-17
CA2938125C (en) 2018-10-23
US9773556B2 (en) 2017-09-26
EP4468299A2 (en) 2024-11-27
KR20160104700A (ko) 2016-09-05
AU2017210573A1 (en) 2017-08-24
KR101942164B1 (ko) 2019-01-24
EP3258469A1 (en) 2017-12-20
HUE048477T2 (hu) 2020-07-28
EP3100273B1 (en) 2020-03-25
PT3100273T (pt) 2020-04-13
EP3896696A1 (en) 2021-10-20
US20180114579A1 (en) 2018-04-26
PL3100273T3 (pl) 2020-06-29
JP2017507404A (ja) 2017-03-16
EP4468299A3 (en) 2025-02-26
EP3100273A1 (en) 2016-12-07
BR112016017343B1 (pt) 2022-01-04
CN111326202A (zh) 2020-06-23
EP3258469B1 (en) 2021-10-06
US10340011B2 (en) 2019-07-02

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