DE112018003001T8 - Ferroelektrische 2T1C-Direktzugriffsspeicherzelle - Google Patents
Ferroelektrische 2T1C-Direktzugriffsspeicherzelle Download PDFInfo
- Publication number
- DE112018003001T8 DE112018003001T8 DE112018003001.6T DE112018003001T DE112018003001T8 DE 112018003001 T8 DE112018003001 T8 DE 112018003001T8 DE 112018003001 T DE112018003001 T DE 112018003001T DE 112018003001 T8 DE112018003001 T8 DE 112018003001T8
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- random access
- access memory
- ferroelectric random
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2255—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2257—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762519042P | 2017-06-13 | 2017-06-13 | |
| US62/519,042 | 2017-06-13 | ||
| US15/714,912 US10074422B1 (en) | 2017-06-13 | 2017-09-25 | 2T1C ferro-electric random access memory cell |
| US15/714,912 | 2017-09-25 | ||
| PCT/US2018/032404 WO2018231399A1 (en) | 2017-06-13 | 2018-05-11 | 2t1c ferro-electric random access memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112018003001T5 DE112018003001T5 (de) | 2020-03-05 |
| DE112018003001T8 true DE112018003001T8 (de) | 2020-06-18 |
Family
ID=63406443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112018003001.6T Active DE112018003001T8 (de) | 2017-06-13 | 2018-05-11 | Ferroelektrische 2T1C-Direktzugriffsspeicherzelle |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10074422B1 (de) |
| JP (2) | JP6748792B2 (de) |
| CN (2) | CN112992216B (de) |
| DE (1) | DE112018003001T8 (de) |
| WO (1) | WO2018231399A1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10074422B1 (en) | 2017-06-13 | 2018-09-11 | Cypress Semiconductor Corporation | 2T1C ferro-electric random access memory cell |
| CN109087674A (zh) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电内存及其数据读取、写入与制造方法和电容结构 |
| US10867653B2 (en) * | 2018-04-20 | 2020-12-15 | Micron Technology, Inc. | Access schemes for protecting stored data in a memory device |
| US10622050B2 (en) | 2018-05-09 | 2020-04-14 | Micron Technology, Inc. | Ferroelectric memory plate power reduction |
| US11205467B2 (en) | 2019-05-09 | 2021-12-21 | Namlab Ggmbh | Ferroelectric memory and logic cell and operation method |
| US10964372B2 (en) * | 2019-06-14 | 2021-03-30 | Micron Technology, Inc. | Memory cell biasing techniques |
| US10872678B1 (en) | 2019-06-19 | 2020-12-22 | Micron Technology, Inc. | Speculative section selection within a memory device |
| US11289146B2 (en) * | 2019-08-27 | 2022-03-29 | Micron Technology, Inc. | Word line timing management |
| US11587603B2 (en) * | 2020-09-30 | 2023-02-21 | Infineon Technologies LLC | Local reference voltage generator for non-volatile memory |
| US11688457B2 (en) * | 2020-12-26 | 2023-06-27 | International Business Machines Corporation | Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing |
| CN116762131A (zh) * | 2021-03-18 | 2023-09-15 | 华为技术有限公司 | 一种存储器及电子设备 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4888733A (en) | 1988-09-12 | 1989-12-19 | Ramtron Corporation | Non-volatile memory cell and sensing method |
| US5424975A (en) * | 1993-12-30 | 1995-06-13 | Micron Technology, Inc. | Reference circuit for a non-volatile ferroelectric memory |
| US6118688A (en) | 1997-06-05 | 2000-09-12 | Matsushita Electronics Corporation | Ferroelectric memory device and method for driving it |
| US6157563A (en) | 1997-06-27 | 2000-12-05 | Matsushita Electronics Corporation | Ferroelectric memory system and method of driving the same |
| KR100268444B1 (ko) | 1997-08-30 | 2000-10-16 | 윤종용 | 강유전체 랜덤 액세스 메모리 장치 |
| US5963497A (en) * | 1998-05-18 | 1999-10-05 | Silicon Aquarius, Inc. | Dynamic random access memory system with simultaneous access and refresh operations and methods for using the same |
| JP4050839B2 (ja) | 1999-01-29 | 2008-02-20 | 松下電器産業株式会社 | 半導体記憶装置 |
| JP3662163B2 (ja) * | 2000-03-06 | 2005-06-22 | シャープ株式会社 | 強誘電体メモリ及びその駆動方法 |
| US6404667B1 (en) * | 2000-09-11 | 2002-06-11 | Samsung Electronics Co., Ltd. | 2T-1C ferroelectric random access memory and operation method thereof |
| JP4047531B2 (ja) | 2000-10-17 | 2008-02-13 | 株式会社東芝 | 強誘電体メモリ装置 |
| WO2002052572A1 (en) | 2000-12-27 | 2002-07-04 | International Business Machines Corporation | Static 2t-1c ferroelectric memory |
| JP4146680B2 (ja) * | 2002-07-18 | 2008-09-10 | 松下電器産業株式会社 | 強誘電体記憶装置及びその読み出し方法 |
| US6724645B1 (en) * | 2003-01-30 | 2004-04-20 | Agilent Technologies, Inc. | Method and apparatus for shortening read operations in destructive read memories |
| US6819601B2 (en) * | 2003-03-07 | 2004-11-16 | Texas Instruments Incorporated | Programmable reference for 1T/1C ferroelectric memories |
| US7193880B2 (en) * | 2004-06-14 | 2007-03-20 | Texas Instruments Incorporated | Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory |
| US6982897B2 (en) | 2003-10-07 | 2006-01-03 | International Business Machines Corporation | Nondestructive read, two-switch, single-charge-storage device RAM devices |
| US6906945B2 (en) * | 2003-11-18 | 2005-06-14 | Texas Instruments Incorporated | Bitline precharge timing scheme to improve signal margin |
| KR100597629B1 (ko) * | 2003-12-22 | 2006-07-07 | 삼성전자주식회사 | 강유전체 메모리 장치 및 그에 따른 구동방법 |
| US7133304B2 (en) * | 2004-03-22 | 2006-11-07 | Texas Instruments Incorporated | Method and apparatus to reduce storage node disturbance in ferroelectric memory |
| US6970371B1 (en) * | 2004-05-17 | 2005-11-29 | Texas Instruments Incorporated | Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages |
| JP4374539B2 (ja) * | 2004-09-27 | 2009-12-02 | セイコーエプソン株式会社 | 強誘電体メモリ装置 |
| US7116572B2 (en) * | 2004-11-09 | 2006-10-03 | Ramtron International Corporation | Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory |
| JP4083173B2 (ja) * | 2005-01-05 | 2008-04-30 | 富士通株式会社 | 半導体メモリ |
| US7957212B2 (en) | 2005-03-31 | 2011-06-07 | Hynix Semiconductor Inc. | Pseudo SRAM |
| JP4983062B2 (ja) * | 2006-03-20 | 2012-07-25 | 富士通セミコンダクター株式会社 | メモリ装置 |
| US7450422B2 (en) * | 2006-05-11 | 2008-11-11 | Micron Technology, Inc. | NAND architecture memory devices and operation |
| US7561458B2 (en) * | 2006-12-26 | 2009-07-14 | Texas Instruments Incorporated | Ferroelectric memory array for implementing a zero cancellation scheme to reduce plateline voltage in ferroelectric memory |
| KR100849794B1 (ko) * | 2007-07-04 | 2008-07-31 | 주식회사 하이닉스반도체 | 강유전체 소자를 적용한 반도체 메모리 장치 |
| KR100843947B1 (ko) * | 2007-07-04 | 2008-07-03 | 주식회사 하이닉스반도체 | 1-트랜지스터형 디램 |
| CN101271728B (zh) * | 2008-04-22 | 2011-05-11 | 清华大学 | 一种抑制小信号干扰的铁电存储器存储阵列结构 |
| US7848131B2 (en) | 2008-10-19 | 2010-12-07 | Juhan Kim | High speed ferroelectric random access memory |
| US7933138B2 (en) * | 2009-01-30 | 2011-04-26 | Texas Instruments Incorporated | F-RAM device with current mirror sense amp |
| KR101395086B1 (ko) * | 2010-06-08 | 2014-05-19 | 한국전자통신연구원 | 메모리 셀 및 이를 이용한 메모리 장치 |
| US20140029326A1 (en) * | 2012-07-26 | 2014-01-30 | Texas Instruments Incorporated | Ferroelectric random access memory with a non-destructive read |
| KR102168652B1 (ko) | 2013-12-16 | 2020-10-23 | 삼성전자주식회사 | 감지 증폭기, 그것을 포함하는 반도체 메모리 장치 및 그것의 읽기 방법 |
| US9514797B1 (en) * | 2016-03-03 | 2016-12-06 | Cypress Semiconductor Corporation | Hybrid reference generation for ferroelectric random access memory |
| US10074422B1 (en) | 2017-06-13 | 2018-09-11 | Cypress Semiconductor Corporation | 2T1C ferro-electric random access memory cell |
-
2017
- 2017-09-25 US US15/714,912 patent/US10074422B1/en active Active
-
2018
- 2018-05-11 CN CN202110191897.0A patent/CN112992216B/zh active Active
- 2018-05-11 DE DE112018003001.6T patent/DE112018003001T8/de active Active
- 2018-05-11 CN CN201880038757.6A patent/CN110741437B/zh active Active
- 2018-05-11 JP JP2019563754A patent/JP6748792B2/ja active Active
- 2018-05-11 WO PCT/US2018/032404 patent/WO2018231399A1/en active Application Filing
- 2018-08-07 US US16/056,874 patent/US10332596B2/en active Active
-
2020
- 2020-08-07 JP JP2020135032A patent/JP6782385B1/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6748792B2 (ja) | 2020-09-02 |
| JP2020191152A (ja) | 2020-11-26 |
| DE112018003001T5 (de) | 2020-03-05 |
| CN112992216A (zh) | 2021-06-18 |
| US10332596B2 (en) | 2019-06-25 |
| JP2020523723A (ja) | 2020-08-06 |
| US20190088320A1 (en) | 2019-03-21 |
| CN110741437A (zh) | 2020-01-31 |
| US10074422B1 (en) | 2018-09-11 |
| CN110741437B (zh) | 2021-03-05 |
| CN112992216B (zh) | 2022-05-13 |
| WO2018231399A1 (en) | 2018-12-20 |
| JP6782385B1 (ja) | 2020-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R083 | Amendment of/additions to inventor(s) | ||
| R081 | Change of applicant/patentee |
Owner name: INFINEON TECHNOLOGIES LLC, SAN JOSE, US Free format text: FORMER OWNER: CYPRESS SEMICONDUCTOR CORPORATION, SAN JOSE, CALIF., US |
|
| R016 | Response to examination communication |