SG11202005773RA - Auto-referenced memory cell read techniques - Google Patents
Auto-referenced memory cell read techniquesInfo
- Publication number
- SG11202005773RA SG11202005773RA SG11202005773RA SG11202005773RA SG11202005773RA SG 11202005773R A SG11202005773R A SG 11202005773RA SG 11202005773R A SG11202005773R A SG 11202005773RA SG 11202005773R A SG11202005773R A SG 11202005773RA SG 11202005773R A SG11202005773R A SG 11202005773RA
- Authority
- SG
- Singapore
- Prior art keywords
- auto
- memory cell
- cell read
- referenced memory
- read techniques
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/853,364 US10431301B2 (en) | 2017-12-22 | 2017-12-22 | Auto-referenced memory cell read techniques |
| PCT/US2018/066653 WO2019126416A2 (en) | 2017-12-22 | 2018-12-20 | Auto-referenced memory cell read techniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202005773RA true SG11202005773RA (en) | 2020-07-29 |
Family
ID=66950574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202005773RA SG11202005773RA (en) | 2017-12-22 | 2018-12-20 | Auto-referenced memory cell read techniques |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US10431301B2 (en) |
| EP (1) | EP3729437A4 (en) |
| JP (1) | JP7026235B2 (en) |
| KR (2) | KR102386641B1 (en) |
| CN (1) | CN111512378B (en) |
| SG (1) | SG11202005773RA (en) |
| TW (1) | TWI683312B (en) |
| WO (1) | WO2019126416A2 (en) |
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2017
- 2017-12-22 US US15/853,364 patent/US10431301B2/en active Active
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2018
- 2018-12-20 EP EP18892460.9A patent/EP3729437A4/en active Pending
- 2018-12-20 WO PCT/US2018/066653 patent/WO2019126416A2/en unknown
- 2018-12-20 JP JP2020533222A patent/JP7026235B2/en active Active
- 2018-12-20 SG SG11202005773RA patent/SG11202005773RA/en unknown
- 2018-12-20 CN CN201880081912.2A patent/CN111512378B/en active Active
- 2018-12-20 KR KR1020207020356A patent/KR102386641B1/en active IP Right Grant
- 2018-12-20 KR KR1020227011829A patent/KR102457048B1/en active IP Right Grant
- 2018-12-21 TW TW107146309A patent/TWI683312B/en active
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2019
- 2019-08-08 US US16/536,120 patent/US10600480B2/en active Active
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2020
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2022
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| US10431301B2 (en) | 2019-10-01 |
| US20210020239A1 (en) | 2021-01-21 |
| KR20220049609A (en) | 2022-04-21 |
| EP3729437A4 (en) | 2021-08-04 |
| TW201937498A (en) | 2019-09-16 |
| US20200294586A1 (en) | 2020-09-17 |
| US20200035297A1 (en) | 2020-01-30 |
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