SG10201500456WA - Thyristor random access memory - Google Patents

Thyristor random access memory

Info

Publication number
SG10201500456WA
SG10201500456WA SG10201500456WA SG10201500456WA SG10201500456WA SG 10201500456W A SG10201500456W A SG 10201500456WA SG 10201500456W A SG10201500456W A SG 10201500456WA SG 10201500456W A SG10201500456W A SG 10201500456WA SG 10201500456W A SG10201500456W A SG 10201500456WA
Authority
SG
Singapore
Prior art keywords
random access
access memory
thyristor random
thyristor
memory
Prior art date
Application number
SG10201500456WA
Inventor
Huat Toh Eng
Seng Tan Shyue
Kiok Boone Quek Elgin
Pak-Chum Shum Danny
Original Assignee
Globalfoundries Sg Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Sg Pte Ltd filed Critical Globalfoundries Sg Pte Ltd
Publication of SG10201500456WA publication Critical patent/SG10201500456WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
SG10201500456WA 2014-05-14 2015-01-21 Thyristor random access memory SG10201500456WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/277,068 US20150333068A1 (en) 2014-05-14 2014-05-14 Thyristor random access memory

Publications (1)

Publication Number Publication Date
SG10201500456WA true SG10201500456WA (en) 2015-12-30

Family

ID=54481694

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201500456WA SG10201500456WA (en) 2014-05-14 2015-01-21 Thyristor random access memory

Country Status (6)

Country Link
US (2) US20150333068A1 (en)
KR (1) KR20150130945A (en)
CN (1) CN105097808B (en)
DE (1) DE102015206391B4 (en)
SG (1) SG10201500456WA (en)
TW (1) TWI580008B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160247888A1 (en) * 2015-02-19 2016-08-25 International Business Machines Corporation Non-uniform gate dielectric for u-shape mosfet
US9502466B1 (en) * 2015-07-28 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy bottom electrode in interconnect to reduce CMP dishing
US9871032B2 (en) * 2015-09-09 2018-01-16 Globalfoundries Singapore Pte. Ltd. Gate-grounded metal oxide semiconductor device
US10453515B2 (en) * 2017-05-10 2019-10-22 Tc Lab, Inc. Methods of operation for cross-point thyristor memory cells with assist gates
US20200202918A1 (en) * 2017-09-14 2020-06-25 Intel Corporation Thyristors
US10741748B2 (en) 2018-06-25 2020-08-11 International Business Machines Corporation Back end of line metallization structures
FR3091021B1 (en) * 2018-12-20 2021-01-08 St Microelectronics Tours Sas Vertical thyristor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
KR960016773B1 (en) * 1994-03-28 1996-12-20 Samsung Electronics Co Ltd Buried bit line and cylindrical gate cell and forming method thereof
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US6545297B1 (en) 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6287953B1 (en) 1998-07-21 2001-09-11 Advanced Micro Devices, Inc. Minimizing transistor size in integrated circuits
US6956263B1 (en) 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
KR100372639B1 (en) 2000-06-21 2003-02-17 주식회사 하이닉스반도체 Method of manufacturing mosfet device
ES2368387T5 (en) * 2000-10-09 2019-03-07 Cytomx Therapeutics Inc Therapeutic and tolerance-inducing antibodies
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6492662B2 (en) * 2001-04-16 2002-12-10 Ibm Corporation T-RAM structure having dual vertical devices and method for fabricating the same
US6627924B2 (en) 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
US6815734B1 (en) * 2002-10-01 2004-11-09 T-Ram, Inc. Varied trench depth for thyristor isolation
US7704833B2 (en) 2004-08-25 2010-04-27 Intel Corporation Method of forming abrupt source drain metal gate transistors
US7655973B2 (en) * 2005-10-31 2010-02-02 Micron Technology, Inc. Recessed channel negative differential resistance-based memory cell
US7940560B2 (en) * 2008-05-29 2011-05-10 Advanced Micro Devices, Inc. Memory cells, memory devices and integrated circuits incorporating the same
KR101154409B1 (en) * 2010-07-30 2012-06-15 현대자동차주식회사 Fuel cell system for vehicles and method for controlling the same
US8519431B2 (en) * 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8748934B2 (en) 2011-09-29 2014-06-10 Tsinghua University Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same
US9287269B2 (en) * 2014-02-06 2016-03-15 Globalfoundries Singapore Pte. Ltd. 1t sram/dram

Also Published As

Publication number Publication date
DE102015206391B4 (en) 2016-09-22
TWI580008B (en) 2017-04-21
TW201606989A (en) 2016-02-16
US20150333068A1 (en) 2015-11-19
US11094696B2 (en) 2021-08-17
US20190115350A1 (en) 2019-04-18
DE102015206391A1 (en) 2015-12-03
CN105097808A (en) 2015-11-25
KR20150130945A (en) 2015-11-24
CN105097808B (en) 2018-01-23

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