MX2016009841A - Direccionamiento tridimensional para memoria de solo lectura programable y borrable. - Google Patents

Direccionamiento tridimensional para memoria de solo lectura programable y borrable.

Info

Publication number
MX2016009841A
MX2016009841A MX2016009841A MX2016009841A MX2016009841A MX 2016009841 A MX2016009841 A MX 2016009841A MX 2016009841 A MX2016009841 A MX 2016009841A MX 2016009841 A MX2016009841 A MX 2016009841A MX 2016009841 A MX2016009841 A MX 2016009841A
Authority
MX
Mexico
Prior art keywords
memory
programmable read
erasable programmable
dimensional addressing
data signal
Prior art date
Application number
MX2016009841A
Other languages
English (en)
Other versions
MX367147B (es
Inventor
Bing NG Boon
Ru Goy Hang
Original Assignee
Hewlett Packard Development Co Lp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co Lp filed Critical Hewlett Packard Development Co Lp
Publication of MX2016009841A publication Critical patent/MX2016009841A/es
Publication of MX367147B publication Critical patent/MX367147B/es

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels

Abstract

El direccionamiento tridimensional para memoria de sólo lectura programable y borrable (EPROM) puede incluir un número de bancos EPROM, un número de registros de desplazamiento, una señal de datos de selección de fila, una señal de datos de selección de columna, y una señal de datos de selección de banco.
MX2016009841A 2014-01-31 2014-01-31 Direccionamiento tridimensional para memoria de sólo lectura programable y borrable. MX367147B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Publications (2)

Publication Number Publication Date
MX2016009841A true MX2016009841A (es) 2016-10-26
MX367147B MX367147B (es) 2019-08-06

Family

ID=53757530

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016009841A MX367147B (es) 2014-01-31 2014-01-31 Direccionamiento tridimensional para memoria de sólo lectura programable y borrable.

Country Status (19)

Country Link
US (3) US9773556B2 (es)
EP (4) EP3896696A1 (es)
JP (1) JP6262355B2 (es)
KR (1) KR101942164B1 (es)
CN (2) CN111326202A (es)
AU (2) AU2014380279B2 (es)
BR (1) BR112016017343B1 (es)
CA (1) CA2938125C (es)
DK (1) DK3100273T3 (es)
ES (1) ES2784236T3 (es)
HU (1) HUE048477T2 (es)
MX (1) MX367147B (es)
PH (1) PH12016501490A1 (es)
PL (1) PL3100273T3 (es)
PT (1) PT3100273T (es)
RU (1) RU2640631C1 (es)
SG (1) SG11201605665VA (es)
WO (1) WO2015116129A1 (es)
ZA (1) ZA201605059B (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102195430B1 (ko) 2016-10-06 2020-12-28 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 신호 경로를 통해 전파되는 입력 제어 신호
CN112976813B (zh) * 2017-01-31 2022-10-04 惠普发展公司，有限责任合伙企业 用于流体喷射片的存储体、流体喷射片、流体盒及打印盒
PT3554843T (pt) * 2017-01-31 2022-03-31 Hewlett Packard Development Co Disposição de bancos de memória e registo de seleção
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
BR112019015593A2 (pt) 2017-07-06 2020-03-17 Hewlett-Packard Development Company, L.P. Seletores para bocais e elementos de memória
CN110944845B (zh) 2017-07-06 2021-06-15 惠普发展公司，有限责任合伙企业 用于流体喷射设备的存储器的解码器
NZ779667A (en) 2019-02-06 2023-06-30 Hewlett Packard Development Co Communicating print component
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit
US11453212B2 (en) 2019-02-06 2022-09-27 Hewlett-Packard Development Company, L.P. Print component with memory circuit
PL3717253T3 (pl) 2019-02-06 2022-08-01 Hewlett-Packard Development Company, L.P. Pamięci matryc płynowych

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TW522099B (en) * 1999-03-31 2003-03-01 Seiko Epson Corp Printing system, printing controller, printer, method for controlling printing operations, printing method, ink box, ink provider, and recording medium
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Also Published As

Publication number Publication date
JP6262355B2 (ja) 2018-01-17
EP3258469A1 (en) 2017-12-20
ES2784236T3 (es) 2020-09-23
EP3100273B1 (en) 2020-03-25
EP3258469B1 (en) 2021-10-06
PH12016501490B1 (en) 2017-02-06
EP3100273A4 (en) 2017-12-13
US20180114579A1 (en) 2018-04-26
CA2938125A1 (en) 2015-08-06
JP2017507404A (ja) 2017-03-16
PH12016501490A1 (en) 2017-02-06
CA2938125C (en) 2018-10-23
AU2014380279A1 (en) 2016-08-11
RU2640631C1 (ru) 2018-01-10
EP3236471A3 (en) 2018-01-17
PL3100273T3 (pl) 2020-06-29
CN105940454A (zh) 2016-09-14
AU2017210573B2 (en) 2019-04-11
US9928912B2 (en) 2018-03-27
US20170221566A1 (en) 2017-08-03
BR112016017343B1 (pt) 2022-01-04
US10340011B2 (en) 2019-07-02
PT3100273T (pt) 2020-04-13
DK3100273T3 (da) 2020-04-06
AU2014380279B2 (en) 2017-05-04
SG11201605665VA (en) 2016-08-30
EP3896696A1 (en) 2021-10-20
BR112016017343A2 (es) 2017-08-08
US9773556B2 (en) 2017-09-26
US20160343439A1 (en) 2016-11-24
HUE048477T2 (hu) 2020-07-28
ZA201605059B (en) 2017-09-27
MX367147B (es) 2019-08-06
WO2015116129A1 (en) 2015-08-06
CN105940454B (zh) 2020-01-17
EP3236471A2 (en) 2017-10-25
KR20160104700A (ko) 2016-09-05
EP3100273A1 (en) 2016-12-07
CN111326202A (zh) 2020-06-23
KR101942164B1 (ko) 2019-01-24
AU2017210573A1 (en) 2017-08-24

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