FR3044460B1 - Amplificateur de lecture pour memoire, en particulier une memoire eeprom - Google Patents

Amplificateur de lecture pour memoire, en particulier une memoire eeprom Download PDF

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Publication number
FR3044460B1
FR3044460B1 FR1561649A FR1561649A FR3044460B1 FR 3044460 B1 FR3044460 B1 FR 3044460B1 FR 1561649 A FR1561649 A FR 1561649A FR 1561649 A FR1561649 A FR 1561649A FR 3044460 B1 FR3044460 B1 FR 3044460B1
Authority
FR
France
Prior art keywords
memory
playback amplifier
especially eeprom
eeprom memory
playback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1561649A
Other languages
English (en)
Other versions
FR3044460A1 (fr
Inventor
Francois Tailliet
Victorien Brecte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1561649A priority Critical patent/FR3044460B1/fr
Priority to US15/141,084 priority patent/US9761316B2/en
Publication of FR3044460A1 publication Critical patent/FR3044460A1/fr
Priority to US15/657,492 priority patent/US10049753B2/en
Application granted granted Critical
Publication of FR3044460B1 publication Critical patent/FR3044460B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
FR1561649A 2015-12-01 2015-12-01 Amplificateur de lecture pour memoire, en particulier une memoire eeprom Expired - Fee Related FR3044460B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1561649A FR3044460B1 (fr) 2015-12-01 2015-12-01 Amplificateur de lecture pour memoire, en particulier une memoire eeprom
US15/141,084 US9761316B2 (en) 2015-12-01 2016-04-28 Reconfigurable sense amplifier for a memory device
US15/657,492 US10049753B2 (en) 2015-12-01 2017-07-24 Reconfigurable sense amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1561649A FR3044460B1 (fr) 2015-12-01 2015-12-01 Amplificateur de lecture pour memoire, en particulier une memoire eeprom
FR1561649 2015-12-01

Publications (2)

Publication Number Publication Date
FR3044460A1 FR3044460A1 (fr) 2017-06-02
FR3044460B1 true FR3044460B1 (fr) 2018-03-30

Family

ID=55182421

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1561649A Expired - Fee Related FR3044460B1 (fr) 2015-12-01 2015-12-01 Amplificateur de lecture pour memoire, en particulier une memoire eeprom

Country Status (2)

Country Link
US (2) US9761316B2 (fr)
FR (1) FR3044460B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3070217B1 (fr) 2017-08-17 2019-08-30 Stmicroelectronics (Rousset) Sas Dispositif et procede de commande du niveau d'un courant de lecture d'une memoire non-volatile
US10832672B2 (en) 2018-07-13 2020-11-10 International Business Machines Corporation Smart speaker system with cognitive sound analysis and response
CN110719553B (zh) * 2018-07-13 2021-08-06 国际商业机器公司 具有认知声音分析和响应的智能扬声器系统

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247213A (en) 1990-05-08 1993-09-21 Advanced Micro Devices, Inc. Programmable sense amplifier power reduction
US5822262A (en) 1996-05-25 1998-10-13 Texas Instruments Incorporated Apparatus and method for a dynamic random access memory data sensing architecture
US5835394A (en) * 1996-09-24 1998-11-10 Samsung Electronics Co., Ltd. Calculating selected sign 3 expression in a single instruction cycle
KR100343290B1 (ko) 2000-03-21 2002-07-15 윤종용 반도체 메모리 장치의 입출력 감지 증폭기 회로
US6700415B2 (en) * 2001-06-07 2004-03-02 Atmel Corporation Sense amplifier with configurable voltage swing control
KR100546321B1 (ko) * 2003-03-15 2006-01-26 삼성전자주식회사 데이터 라인 상에 전압 감지 증폭기와 전류 감지 증폭기를갖는 멀티 뱅크 메모리 장치
FR2853444B1 (fr) * 2003-04-02 2005-07-15 St Microelectronics Sa Amplificateur de lecture a double etage de lecture
US7019998B2 (en) 2003-09-09 2006-03-28 Silicon Storage Technology, Inc. Unified multilevel cell memory
FR2885726B1 (fr) * 2005-05-11 2007-07-06 Atmel Corp Circuit amplificateur de detection pour la detection parallele de quatre niveaux de courant
FR2938109A1 (fr) * 2008-11-05 2010-05-07 St Microelectronics Rousset Memoire eeprom protegee contre les effets de claquage de transistors mos
EP2299450B1 (fr) 2009-09-18 2013-03-27 STMicroelectronics Srl Circuit amplificateur de sens pour mémoires non volatiles qui fonctionne sur de basses tensions d'alimentation
IT1401091B1 (it) 2010-06-15 2013-07-12 St Microelectronics Srl Circuito di lettura di celle di memoria non volatili e sistema di memoria comprendente il circuito
WO2012102785A2 (fr) * 2011-01-27 2012-08-02 Rambus Inc. Cellule de mémoire à mécanismes de lecture multiples
FR2980321A1 (fr) * 2011-09-21 2013-03-22 St Microelectronics Rousset Detecteur de courant autorisant une large plage de tension d'alimentation
US8514645B2 (en) * 2011-12-13 2013-08-20 Atmel Corporation Current-mode sense amplifier for high-speed sensing
US9602083B2 (en) * 2013-07-03 2017-03-21 Nvidia Corporation Clock generation circuit that tracks critical path across process, voltage and temperature variation
KR102169681B1 (ko) * 2013-12-16 2020-10-26 삼성전자주식회사 감지 증폭기, 그것을 포함하는 불휘발성 메모리 장치 및 그것의 센싱 방법

Also Published As

Publication number Publication date
US20170154683A1 (en) 2017-06-01
US10049753B2 (en) 2018-08-14
FR3044460A1 (fr) 2017-06-02
US9761316B2 (en) 2017-09-12
US20170323683A1 (en) 2017-11-09

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