FR2853444B1 - Amplificateur de lecture a double etage de lecture - Google Patents

Amplificateur de lecture a double etage de lecture

Info

Publication number
FR2853444B1
FR2853444B1 FR0304077A FR0304077A FR2853444B1 FR 2853444 B1 FR2853444 B1 FR 2853444B1 FR 0304077 A FR0304077 A FR 0304077A FR 0304077 A FR0304077 A FR 0304077A FR 2853444 B1 FR2853444 B1 FR 2853444B1
Authority
FR
France
Prior art keywords
reading
dual
amplifier
reading amplifier
reading dual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0304077A
Other languages
English (en)
Other versions
FR2853444A1 (fr
Inventor
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0304077A priority Critical patent/FR2853444B1/fr
Priority to US10/816,204 priority patent/US7031212B2/en
Publication of FR2853444A1 publication Critical patent/FR2853444A1/fr
Application granted granted Critical
Publication of FR2853444B1 publication Critical patent/FR2853444B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
FR0304077A 2003-04-02 2003-04-02 Amplificateur de lecture a double etage de lecture Expired - Fee Related FR2853444B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0304077A FR2853444B1 (fr) 2003-04-02 2003-04-02 Amplificateur de lecture a double etage de lecture
US10/816,204 US7031212B2 (en) 2003-04-02 2004-04-01 Double read stage sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0304077A FR2853444B1 (fr) 2003-04-02 2003-04-02 Amplificateur de lecture a double etage de lecture

Publications (2)

Publication Number Publication Date
FR2853444A1 FR2853444A1 (fr) 2004-10-08
FR2853444B1 true FR2853444B1 (fr) 2005-07-15

Family

ID=32982171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0304077A Expired - Fee Related FR2853444B1 (fr) 2003-04-02 2003-04-02 Amplificateur de lecture a double etage de lecture

Country Status (2)

Country Link
US (1) US7031212B2 (fr)
FR (1) FR2853444B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126869B1 (en) * 2003-06-26 2006-10-24 Cypress Semiconductor Corp. Sense amplifier with dual cascode transistors and improved noise margin
FR2888659A1 (fr) * 2005-07-18 2007-01-19 St Microelectronics Sa Amplificateur de lecture pour memoire non volatile
US7369450B2 (en) 2006-05-26 2008-05-06 Freescale Semiconductor, Inc. Nonvolatile memory having latching sense amplifier and method of operation
US7782695B2 (en) 2007-01-12 2010-08-24 Atmel Corporation Compensated current offset in a sensing circuit
US7605644B2 (en) * 2007-05-03 2009-10-20 Arm Limited Integrated circuit power-on control and programmable comparator
US9478308B1 (en) * 2015-05-26 2016-10-25 Intel IP Corporation Programmable memory device sense amplifier
FR3044460B1 (fr) * 2015-12-01 2018-03-30 Stmicroelectronics (Rousset) Sas Amplificateur de lecture pour memoire, en particulier une memoire eeprom
US10658048B2 (en) * 2018-08-16 2020-05-19 Stmicroelectronics S.R.L. Floating boosted pre-charge scheme for sense amplifiers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814996B2 (ja) * 1989-06-27 1996-02-14 株式会社東芝 半導体記憶装置
DE69629669T2 (de) * 1996-06-18 2004-07-08 Stmicroelectronics S.R.L., Agrate Brianza Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
US5748015A (en) * 1996-07-01 1998-05-05 Sun Microsystems, Inc. Low voltage single ended dynamic sense amplifier
TW440841B (en) * 1998-03-17 2001-06-16 Sanyo Electric Co Sensor amplifier
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier
US6590804B1 (en) * 2002-07-16 2003-07-08 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier

Also Published As

Publication number Publication date
US7031212B2 (en) 2006-04-18
US20040252568A1 (en) 2004-12-16
FR2853444A1 (fr) 2004-10-08

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091231