CN105940454B - 对可擦除可编程只读存储器进行三维寻址 - Google Patents

对可擦除可编程只读存储器进行三维寻址 Download PDF

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Publication number
CN105940454B
CN105940454B CN201480074342.6A CN201480074342A CN105940454B CN 105940454 B CN105940454 B CN 105940454B CN 201480074342 A CN201480074342 A CN 201480074342A CN 105940454 B CN105940454 B CN 105940454B
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China
Prior art keywords
eprom
data signal
shift registers
shift register
select data
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CN201480074342.6A
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English (en)
Chinese (zh)
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CN105940454A (zh
Inventor
B·B·吴
H·R·戈伊
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Hewlett Packard Development Co LP
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Hewlett Packard Development Co LP
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Priority to CN202010089674.9A priority Critical patent/CN111326202A/zh
Publication of CN105940454A publication Critical patent/CN105940454A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
CN201480074342.6A 2014-01-31 2014-01-31 对可擦除可编程只读存储器进行三维寻址 Active CN105940454B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010089674.9A CN111326202A (zh) 2014-01-31 2014-01-31 对可擦除可编程只读存储器进行三维寻址

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010089674.9A Division CN111326202A (zh) 2014-01-31 2014-01-31 对可擦除可编程只读存储器进行三维寻址

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CN105940454A CN105940454A (zh) 2016-09-14
CN105940454B true CN105940454B (zh) 2020-01-17

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CN202010089674.9A Pending CN111326202A (zh) 2014-01-31 2014-01-31 对可擦除可编程只读存储器进行三维寻址

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US (3) US9773556B2 (enExample)
EP (5) EP3100273B1 (enExample)
JP (1) JP6262355B2 (enExample)
KR (1) KR101942164B1 (enExample)
CN (2) CN105940454B (enExample)
AU (2) AU2014380279B2 (enExample)
BR (1) BR112016017343B1 (enExample)
CA (1) CA2938125C (enExample)
DK (1) DK3100273T3 (enExample)
ES (1) ES2784236T3 (enExample)
HU (1) HUE048477T2 (enExample)
MX (1) MX367147B (enExample)
PH (1) PH12016501490B1 (enExample)
PL (1) PL3100273T3 (enExample)
PT (1) PT3100273T (enExample)
RU (1) RU2640631C1 (enExample)
SG (1) SG11201605665VA (enExample)
WO (1) WO2015116129A1 (enExample)
ZA (1) ZA201605059B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
BR112019006948B1 (pt) 2016-10-06 2022-12-20 Hewlett-Packard Development Company, L.P. Aparelho de controle para um dispositivo de ejeção de fluido, dispositivo de ejeção de fluido e método
BR112019015681B1 (pt) 2017-01-31 2023-10-31 Hewlett-Packard Development Company, L.P Arranjo de memória para uma matriz de ejeção de fluido, matriz de ejeção de fluido e cartucho de fluido
CN113276561B (zh) * 2017-01-31 2022-10-11 惠普发展公司，有限责任合伙企业 用于流体喷射片的存储器库装置、流体喷射片及流体盒
US11090926B2 (en) 2017-07-06 2021-08-17 Hewlett-Packard Development Company, L.P. Decoders for memories of fluid ejection devices
PH12019501747B1 (en) 2017-07-06 2022-11-09 Hewlett Packard Development Co Selectors for nozzles and memory elements
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
AU2019428071B2 (en) 2019-02-06 2023-01-19 Hewlett-Packard Development Company, L.P. Print component with memory circuit
MX2021008895A (es) 2019-02-06 2021-08-19 Hewlett Packard Development Co Componente de impresion de comunicacion.
WO2020162910A1 (en) 2019-02-06 2020-08-13 Hewlett-Packard Development Company, L.P. Memories of fluidic dies
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281045B1 (en) * 2014-12-16 2016-03-08 Globalfoundries Inc. Refresh hidden eDRAM memory

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641574A (en) 1979-09-07 1981-04-18 Nec Corp Memory unit
JPS5694589A (en) * 1979-12-27 1981-07-31 Nec Corp Memory device
CA1234224A (en) 1985-05-28 1988-03-15 Boleslav Sykora Computer memory management system
JPS63136397A (ja) 1986-11-26 1988-06-08 Nec Corp シフトレジスタ回路
JP3081614B2 (ja) 1989-03-08 2000-08-28 富士通株式会社 部分書込み制御装置
JP2862287B2 (ja) * 1989-10-12 1999-03-03 キヤノン株式会社 画像記録装置
US5029020A (en) * 1989-11-17 1991-07-02 Xerox Corporation Scanner with slow scan image context processing
JPH06236680A (ja) * 1992-12-15 1994-08-23 Mitsubishi Electric Corp シリアルアドレス入力用メモリ装置及びシリアルアドレス発生装置
US5828814A (en) 1996-09-10 1998-10-27 Moore Business Forms, Inc. Reduced cost high resolution real time raster image processing system and method
KR100313503B1 (ko) 1999-02-12 2001-11-07 김영환 멀티-뱅크 메모리 어레이를 갖는 반도체 메모리 장치
TW522099B (en) * 1999-03-31 2003-03-01 Seiko Epson Corp Printing system, printing controller, printer, method for controlling printing operations, printing method, ink box, ink provider, and recording medium
JP2000349163A (ja) * 1999-06-04 2000-12-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6883044B1 (en) 2000-07-28 2005-04-19 Micron Technology, Inc. Synchronous flash memory with simultaneous access to one or more banks
US7444575B2 (en) 2000-09-21 2008-10-28 Inapac Technology, Inc. Architecture and method for testing of an integrated circuit device
US6402279B1 (en) 2000-10-30 2002-06-11 Hewlett-Packard Company Inkjet printhead and method for the same
US6552955B1 (en) * 2001-10-30 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with reduced power consumption
US6983428B2 (en) * 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US7549718B2 (en) * 2004-05-27 2009-06-23 Silverbrook Research Pty Ltd Printhead module having operation controllable on basis of thermal sensors
KR100855861B1 (ko) * 2005-12-30 2008-09-01 주식회사 하이닉스반도체 비휘발성 반도체 메모리 장치
JP4802722B2 (ja) * 2006-01-17 2011-10-26 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
US7484138B2 (en) * 2006-06-09 2009-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for improving reliability of memory device
EP2263146B3 (en) * 2008-03-14 2018-09-05 Hewlett-Packard Development Company, L.P. Secure access to fluid cartridge memory
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
KR101879442B1 (ko) * 2011-05-25 2018-07-18 삼성전자주식회사 휘발성 메모리 장치의 리프레쉬 방법, 리프레쉬 어드레스 생성기 및 휘발성 메모리 장치
CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
WO2015160350A1 (en) * 2014-04-17 2015-10-22 Hewlett-Packard Development Company, L.P. Addressing an eprom on a printhead

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281045B1 (en) * 2014-12-16 2016-03-08 Globalfoundries Inc. Refresh hidden eDRAM memory

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Publication number Publication date
MX2016009841A (es) 2016-10-26
CN105940454A (zh) 2016-09-14
PH12016501490B1 (en) 2018-11-14
EP3100273B1 (en) 2020-03-25
JP2017507404A (ja) 2017-03-16
SG11201605665VA (en) 2016-08-30
EP3236471A3 (en) 2018-01-17
CA2938125C (en) 2018-10-23
CA2938125A1 (en) 2015-08-06
EP4468299A2 (en) 2024-11-27
ES2784236T3 (es) 2020-09-23
PT3100273T (pt) 2020-04-13
EP3100273A1 (en) 2016-12-07
KR20160104700A (ko) 2016-09-05
EP3236471A2 (en) 2017-10-25
US9928912B2 (en) 2018-03-27
EP3100273A4 (en) 2017-12-13
EP4468299A3 (en) 2025-02-26
WO2015116129A1 (en) 2015-08-06
US9773556B2 (en) 2017-09-26
DK3100273T3 (da) 2020-04-06
AU2014380279A1 (en) 2016-08-11
US20170221566A1 (en) 2017-08-03
US10340011B2 (en) 2019-07-02
BR112016017343B1 (pt) 2022-01-04
US20180114579A1 (en) 2018-04-26
BR112016017343A2 (enExample) 2017-08-08
PH12016501490A1 (en) 2017-02-06
EP3896696A1 (en) 2021-10-20
US20160343439A1 (en) 2016-11-24
HUE048477T2 (hu) 2020-07-28
EP3258469A1 (en) 2017-12-20
RU2640631C1 (ru) 2018-01-10
CN111326202A (zh) 2020-06-23
ZA201605059B (en) 2017-09-27
AU2017210573A1 (en) 2017-08-24
JP6262355B2 (ja) 2018-01-17
PL3100273T3 (pl) 2020-06-29
MX367147B (es) 2019-08-06
AU2014380279B2 (en) 2017-05-04
AU2017210573B2 (en) 2019-04-11
KR101942164B1 (ko) 2019-01-24
EP3258469B1 (en) 2021-10-06

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