JP6262355B2 - 消去可能ｐｒｏｍ用の３次元アドレス指定 - Google Patents

消去可能ｐｒｏｍ用の３次元アドレス指定 Download PDF

Info

Publication number
JP6262355B2
JP6262355B2 JP2016545345A JP2016545345A JP6262355B2 JP 6262355 B2 JP6262355 B2 JP 6262355B2 JP 2016545345 A JP2016545345 A JP 2016545345A JP 2016545345 A JP2016545345 A JP 2016545345A JP 6262355 B2 JP6262355 B2 JP 6262355B2
Authority
JP
Japan
Prior art keywords
eprom
data signal
shift register
bank
selection data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016545345A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017507404A (ja
Inventor
ング，ブーン・ビン
ゴイ，ハン・ル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of JP2017507404A publication Critical patent/JP2017507404A/ja
Application granted granted Critical
Publication of JP6262355B2 publication Critical patent/JP6262355B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2016545345A 2014-01-31 2014-01-31 消去可能ｐｒｏｍ用の３次元アドレス指定 Expired - Fee Related JP6262355B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/014014 WO2015116129A1 (en) 2014-01-31 2014-01-31 Three-dimensional addressing for erasable programmable read only memory

Publications (2)

Publication Number Publication Date
JP2017507404A JP2017507404A (ja) 2017-03-16
JP6262355B2 true JP6262355B2 (ja) 2018-01-17

Family

ID=53757530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016545345A Expired - Fee Related JP6262355B2 (ja) 2014-01-31 2014-01-31 消去可能ｐｒｏｍ用の３次元アドレス指定

Country Status (19)

Country Link
US (3) US9773556B2 (enExample)
EP (5) EP3100273B1 (enExample)
JP (1) JP6262355B2 (enExample)
KR (1) KR101942164B1 (enExample)
CN (2) CN105940454B (enExample)
AU (2) AU2014380279B2 (enExample)
BR (1) BR112016017343B1 (enExample)
CA (1) CA2938125C (enExample)
DK (1) DK3100273T3 (enExample)
ES (1) ES2784236T3 (enExample)
HU (1) HUE048477T2 (enExample)
MX (1) MX367147B (enExample)
PH (1) PH12016501490B1 (enExample)
PL (1) PL3100273T3 (enExample)
PT (1) PT3100273T (enExample)
RU (1) RU2640631C1 (enExample)
SG (1) SG11201605665VA (enExample)
WO (1) WO2015116129A1 (enExample)
ZA (1) ZA201605059B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
BR112019006948B1 (pt) 2016-10-06 2022-12-20 Hewlett-Packard Development Company, L.P. Aparelho de controle para um dispositivo de ejeção de fluido, dispositivo de ejeção de fluido e método
BR112019015681B1 (pt) 2017-01-31 2023-10-31 Hewlett-Packard Development Company, L.P Arranjo de memória para uma matriz de ejeção de fluido, matriz de ejeção de fluido e cartucho de fluido
CN113276561B (zh) * 2017-01-31 2022-10-11 惠普发展公司，有限责任合伙企业 用于流体喷射片的存储器库装置、流体喷射片及流体盒
US11090926B2 (en) 2017-07-06 2021-08-17 Hewlett-Packard Development Company, L.P. Decoders for memories of fluid ejection devices
PH12019501747B1 (en) 2017-07-06 2022-11-09 Hewlett Packard Development Co Selectors for nozzles and memory elements
US10913265B2 (en) 2017-07-06 2021-02-09 Hewlett-Packard Development Company, L.P. Data lines to fluid ejection devices
AU2019428071B2 (en) 2019-02-06 2023-01-19 Hewlett-Packard Development Company, L.P. Print component with memory circuit
MX2021008895A (es) 2019-02-06 2021-08-19 Hewlett Packard Development Co Componente de impresion de comunicacion.
WO2020162910A1 (en) 2019-02-06 2020-08-13 Hewlett-Packard Development Company, L.P. Memories of fluidic dies
US11787173B2 (en) 2019-02-06 2023-10-17 Hewlett-Packard Development Company, L.P. Print component with memory circuit

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641574A (en) 1979-09-07 1981-04-18 Nec Corp Memory unit
JPS5694589A (en) * 1979-12-27 1981-07-31 Nec Corp Memory device
CA1234224A (en) 1985-05-28 1988-03-15 Boleslav Sykora Computer memory management system
JPS63136397A (ja) 1986-11-26 1988-06-08 Nec Corp シフトレジスタ回路
JP3081614B2 (ja) 1989-03-08 2000-08-28 富士通株式会社 部分書込み制御装置
JP2862287B2 (ja) * 1989-10-12 1999-03-03 キヤノン株式会社 画像記録装置
US5029020A (en) * 1989-11-17 1991-07-02 Xerox Corporation Scanner with slow scan image context processing
JPH06236680A (ja) * 1992-12-15 1994-08-23 Mitsubishi Electric Corp シリアルアドレス入力用メモリ装置及びシリアルアドレス発生装置
US5828814A (en) 1996-09-10 1998-10-27 Moore Business Forms, Inc. Reduced cost high resolution real time raster image processing system and method
KR100313503B1 (ko) 1999-02-12 2001-11-07 김영환 멀티-뱅크 메모리 어레이를 갖는 반도체 메모리 장치
TW522099B (en) * 1999-03-31 2003-03-01 Seiko Epson Corp Printing system, printing controller, printer, method for controlling printing operations, printing method, ink box, ink provider, and recording medium
JP2000349163A (ja) * 1999-06-04 2000-12-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6883044B1 (en) 2000-07-28 2005-04-19 Micron Technology, Inc. Synchronous flash memory with simultaneous access to one or more banks
US7444575B2 (en) 2000-09-21 2008-10-28 Inapac Technology, Inc. Architecture and method for testing of an integrated circuit device
US6402279B1 (en) 2000-10-30 2002-06-11 Hewlett-Packard Company Inkjet printhead and method for the same
US6552955B1 (en) * 2001-10-30 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with reduced power consumption
US6983428B2 (en) * 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US7549718B2 (en) * 2004-05-27 2009-06-23 Silverbrook Research Pty Ltd Printhead module having operation controllable on basis of thermal sensors
KR100855861B1 (ko) * 2005-12-30 2008-09-01 주식회사 하이닉스반도체 비휘발성 반도체 메모리 장치
JP4802722B2 (ja) * 2006-01-17 2011-10-26 セイコーエプソン株式会社 シーケンシャルアクセスメモリ
US7484138B2 (en) * 2006-06-09 2009-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for improving reliability of memory device
EP2263146B3 (en) * 2008-03-14 2018-09-05 Hewlett-Packard Development Company, L.P. Secure access to fluid cartridge memory
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
KR101879442B1 (ko) * 2011-05-25 2018-07-18 삼성전자주식회사 휘발성 메모리 장치의 리프레쉬 방법, 리프레쉬 어드레스 생성기 및 휘발성 메모리 장치
CN105940454B (zh) * 2014-01-31 2020-01-17 惠普发展公司，有限责任合伙企业 对可擦除可编程只读存储器进行三维寻址
WO2015160350A1 (en) * 2014-04-17 2015-10-22 Hewlett-Packard Development Company, L.P. Addressing an eprom on a printhead
US9281045B1 (en) * 2014-12-16 2016-03-08 Globalfoundries Inc. Refresh hidden eDRAM memory

Also Published As

Publication number Publication date
MX2016009841A (es) 2016-10-26
CN105940454A (zh) 2016-09-14
CN105940454B (zh) 2020-01-17
PH12016501490B1 (en) 2018-11-14
EP3100273B1 (en) 2020-03-25
JP2017507404A (ja) 2017-03-16
SG11201605665VA (en) 2016-08-30
EP3236471A3 (en) 2018-01-17
CA2938125C (en) 2018-10-23
CA2938125A1 (en) 2015-08-06
EP4468299A2 (en) 2024-11-27
ES2784236T3 (es) 2020-09-23
PT3100273T (pt) 2020-04-13
EP3100273A1 (en) 2016-12-07
KR20160104700A (ko) 2016-09-05
EP3236471A2 (en) 2017-10-25
US9928912B2 (en) 2018-03-27
EP3100273A4 (en) 2017-12-13
EP4468299A3 (en) 2025-02-26
WO2015116129A1 (en) 2015-08-06
US9773556B2 (en) 2017-09-26
DK3100273T3 (da) 2020-04-06
AU2014380279A1 (en) 2016-08-11
US20170221566A1 (en) 2017-08-03
US10340011B2 (en) 2019-07-02
BR112016017343B1 (pt) 2022-01-04
US20180114579A1 (en) 2018-04-26
BR112016017343A2 (enExample) 2017-08-08
PH12016501490A1 (en) 2017-02-06
EP3896696A1 (en) 2021-10-20
US20160343439A1 (en) 2016-11-24
HUE048477T2 (hu) 2020-07-28
EP3258469A1 (en) 2017-12-20
RU2640631C1 (ru) 2018-01-10
CN111326202A (zh) 2020-06-23
ZA201605059B (en) 2017-09-27
AU2017210573A1 (en) 2017-08-24
PL3100273T3 (pl) 2020-06-29
MX367147B (es) 2019-08-06
AU2014380279B2 (en) 2017-05-04
AU2017210573B2 (en) 2019-04-11
KR101942164B1 (ko) 2019-01-24
EP3258469B1 (en) 2021-10-06

Similar Documents

Publication Publication Date Title
JP2017507404A (ja) 消去可能ｐｒｏｍ用の３次元アドレス指定
JP5980274B2 (ja) 多次元データのランダム化
JPS62237542A (ja) メモリ
US6728799B1 (en) Hybrid data I/O for memory applications
US5369618A (en) Serial access memory
US9263101B2 (en) Semiconductor memory device
US10236043B2 (en) Emulated multiport memory element circuitry with exclusive-OR based control circuitry
KR940004639A (ko) 반도체 기억장치
HK1226193A1 (en) Three-dimensional addressing for erasable programmable read only memory
HK1226193B (en) Three-dimensional addressing for erasable programmable read only memory
CN120435711B (zh) 随机数据分发
JP7427972B2 (ja) 半導体記憶装置、コントローラ、及び方法
KR20140034567A (ko) 반도체 메모리 장치
KR19980069842A (ko) 동기형 반도체 기억 장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160707

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170915

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171213

R150 Certificate of patent or registration of utility model

Ref document number: 6262355

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees